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Process for growing a film epitaxially upon an oxide surface and structures formed with the process 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C30B-023/02
출원번호 US-0163427 (1993-12-08)
발명자 / 주소
  • McKee Rodney A. (Kingston TN) Walker Frederick J. (Oak Ridge TN)
출원인 / 주소
  • Martin Marietta Energy Systems, Inc. (Oak Ridge TN 02)
인용정보 피인용 횟수 : 55  인용 특허 : 0

초록

A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built u

대표청구항

A process for coating a body with an epitaxial film wherein the body has a surface provided by an alkaline earth oxide, the process comprising the steps of: growing, by molecular beam epitaxy (MBE) techniques, a single plane of metal oxide having oxygen and a metal element of a group of metals consi

이 특허를 인용한 특허 (55)

  1. Finder, Jeffrey M.; Eisenbeiser, Kurt; Ramdani, Jamal; Droopad, Ravindranath; Ooms, William Jay, Acoustic wave device and process for forming the same.
  2. McKee Rodney Allen ; Walker Frederick Joseph, Anisotropy-based crystalline oxide-on-semiconductor material.
  3. Gary W. Grube, Apparatus and method for effecting communications among a plurality of remote stations.
  4. Barbara M. Foley ; Gary W. Grube, Apparatus and method for measuring selected physical condition of an animate subject.
  5. McKee Rodney A. ; Walker Frederick J., Control method and system for use when growing thin-films on semiconductor-based materials.
  6. McKee, Rodney A.; Walker, Frederick J., Control system for use when growing thin-films on semiconductor-based materials.
  7. Demkov, Alexander A.; Posadas, Agham-Bayan S., Efficiently injecting spin-polarized current into semiconductors by interfacing crystalline ferromagnetic oxides directly on the semiconductor material.
  8. Demkov, Alexander A.; Posadas, Agham-Bayan S., Efficiently injecting spin-polarized current into semiconductors by interfacing crystalline ferromagnetic oxides directly on the semiconductor material.
  9. Vieira,Amarildo J. C.; Barenburg,Barbara F.; Brophy,Timothy J., Fabrication of a wavelength locker within a semiconductor structure.
  10. Liang, Yong; Droopad, Ravindranath; Li, Hao; Yu, Zhiyi, Ferromagnetic semiconductor structure and method for forming the same.
  11. McKee Rodney A. ; Walker Frederick J., Geometric shape control of thin film ferroelectrics and resulting structures.
  12. Droopad, Ravindranath, Growth of compound semiconductor structures on patterned oxide films and process for fabricating same.
  13. El Zein,Nada; Ramdani,Jamal; Eisenbeiser,Kurt; Droopad,Ravindranath, Heterojunction tunneling diodes and process for fabricating same.
  14. Charles W. Shanley, Integrated circuits with optical signal propagation.
  15. Robert J. Higgins, Jr. ; Robert E. Stengel, Integrated gallium arsenide communications systems.
  16. Curless, Jay A., Method and apparatus for controlling anti-phase domains in semiconductor structures and devices.
  17. Ooms,William J.; Hallmark,Jerald A., Method and apparatus utilizing monocrystalline insulator.
  18. Yi Zhiyi ; Droopad Ravindranath ; Overgaard Corey Daniel ; Ramdani Jamal ; Curless Jay A. ; Hallmark Jerald A. ; Ooms William J. ; Wang Jun, Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon.
  19. Yu Zhiyi ; Droopad Ravindranath ; Overgaard Corey Daniel ; Ramdani Jamal ; Curless Jay A. ; Hallmark Jerald A. ; Ooms William J. ; Wang Jun, Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon.
  20. Yu Zhiyi ; Wang Jun ; Droopad Ravindranath ; Ramdani Jamal, Method for fabricating a semiconductor structure having a stable crystalline interface with silicon.
  21. Ramdani, Jamal; Droopad, Ravindranath; Yu, Zhiyi, Method for fabricating a semiconductor structure including a metal oxide interface with silicon.
  22. Droopad Ravindranath ; Yu Zhiyi ; Ramdani Jamal, Method for fabricating a semiconductor structure with reduced leakage current density.
  23. Liang,Yong; Droopad,Ravindranath; Hu,Xiaoming; Wang,Jun; Wei,Yi; Yu,Zhiyi, Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process.
  24. Maiti Bikas ; Tobin Philip J. ; Hegde Rama I. ; Cuellar Jesus, Method for forming high dielectric constant metal oxides.
  25. Li, Hao; Droopad, Ravindranath; Marshall, Daniel S.; Wei, Yi; Hu, Xiao M.; Liang, Yong, Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate.
  26. Ooms William J. ; Marshall Daniel S. ; Hallmark Jerald A., Method for making a ferroelectric semiconductor device and a layered structure.
  27. Gorrell, Jonathan F.; Cornett, Kenneth D., Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials.
  28. Yu, Zhiyi; Droopad, Ravindranath; Overgaard, Corey, Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method.
  29. Edwards, Jr., John L.; Wei, Yi; Jordan, Dirk C.; Hu, Xiaoming; Craigo, James Bradley; Droopad, Ravindranath; Yu, Zhiyi; Demkov, Alexander A., Method of removing an amorphous oxide from a monocrystalline surface.
  30. Peter J. Wilson ; Mihir A. Pandya, Microprocessor structure having a compound semiconductor layer.
  31. Talin,Albert Alec; Voight,Steven A., Optical waveguide structure and method for fabricating the same.
  32. Ooms, William J.; Finder, Jeffrey M.; Eisenbeiser, Kurt W.; Hallmark, Jerald A., Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same.
  33. Michael G. Taylor ; Charles W. Shanley ; William J. Ooms, Reconfigurable systems using hybrid integrated circuits with optical ports.
  34. Eisenbeiser,Kurt; Wang,Jun; Droopad,Ravindranath, Semiconductor device and method.
  35. Yu,Zhiyi; Droopad,Ravindranath, Semiconductor structure exhibiting reduced leakage current and method of fabricating same.
  36. Wang Jun ; Ooms William Jay ; Hallmark Jerald Allen, Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon.
  37. Zhiyi Yu ; Jun Wang ; Ravindranath Droopad ; Alexander Demkov ; Jerald Allan Hallmark ; Jamal Ramdani, Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon.
  38. Ramdani, Jamal; Hilt, Lyndee L., Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure.
  39. Eisenbeiser, Kurt; Foley, Barbara M.; Finder, Jeffrey M.; Thompson, Danny L., Semiconductor structure including a partially annealed layer and method of forming the same.
  40. Jamal Ramdani ; Ravindranath Droopad ; Lyndee L. Hilt ; Kurt William Eisenbeiser, Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same.
  41. Ramdani,Jamal; Droopad,Ravindranath; Hilt,Lyndee L.; Eisenbeiser,Kurt Williamson, Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same.
  42. McKee Rodney A. ; Walker Frederick Joseph, Silicon-integrated thin-film structure for electro-optic applications.
  43. Chen,Jiangnan; Rotstein,Ron; Luz,Yuda; Jalloul,Louay A, Soft handoff between cellular systems employing different encoding rates.
  44. Chambers,Scott A., Spinel-structured metal oxide on a substrate and method of making same by molecular beam epitaxy.
  45. McKee Rodney Allen ; Walker Frederick Joseph, Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material.
  46. Ramdani,Jamal; Hilt,Lyndee L., Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate.
  47. Chason, Marc; Gamota, Daniel, Structure and method for fabricating an electro-rheological lens.
  48. Emrick, Rudy M.; Bosco, Bruce Allen; Holmes, John E.; Franson, Steven James; Rockwell, Stephen Kent, Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same.
  49. Eisenbeiser, Kurt W.; Yu, Zhiyi; Droopad, Ravindranath, Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same.
  50. Holm, Paige M.; Barenburg, Barbara Foley; Yamamoto, Joyce K.; Richard, Fred V., Structure and method for fabricating semiconductor microresonator devices.
  51. Lempkowski,Robert; Chason,Marc, Structure and method for fabricating semiconductor structures and devices for detecting an object.
  52. Tungare,Aroon; Klosowiak,Tomasz L., Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials.
  53. Valliath, George, Structure and method for fabrication for a solid-state lighting device.
  54. Tungare, Aroon; Lian, Keryn; Lempkowski, Robert; Barenburg, Barbara Foley, Structure and method of fabrication for an optical switch.
  55. Emrick, Rudy M.; Rockwell, Stephen Kent; Holmes, John E., Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates.
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