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CMOS image sensor with pixel level A/D conversion 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H04N-003/14
  • H04N-005/335
출원번호 US-0196686 (1994-02-15)
발명자 / 주소
  • Fowler Boyd (Santa Clara CA) El Gamal Abbas (Palo Alto CA)
출원인 / 주소
  • Stanford University (Palo Alto CA 02)
인용정보 피인용 횟수 : 327  인용 특허 : 0

초록 ▼

An image sensor formed using a CMOS process is described herein which includes a pixel array core of phototransistors whose conductivities are related to the magnitude of light impinging upon the phototransistors. The analog signals generated by the phototransistors are converted to a serial bit str

대표청구항 ▼

An image sensor circuit comprising: a two dimensional array of photodetectors located within an image sensor core on an integrated circuit chip, each of said photodetectors having electrical characteristics which vary in response to light impinging upon said photodetectors; and a plurality of analog

이 특허를 인용한 특허 (327)

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