이 특허를 인용한 특허 (54)

1. Weimer, Ronald A.; Gonzalez, Fernando, Ammonia gas passivation on nitride encapsulated devices.

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2. Morisako Isamu,JPX, Apparatus and method for surface treatment.

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3. Sargent, Edward Hartley; Tang, Jiang, Colloidal nanoparticle materials for photodetectors and photovoltaics.

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4. Weimer, Ronald A.; Gonzalez, Fernando, Gas passivation on nitride encapsulated devices.

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5. Sargent, Edward Hartley; Koleilat, Ghada; Levina, Larissa, Materials for electronic and optoelectronic devices having enhanced charge transfer.

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6. Ivanov, Igor Constantin; Sargent, Edward Hartley; Tian, Hui, Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom.

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7. Ivanov, Igor Constantin; Sargent, Edward Hartley; Tian, Hui, Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom.

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8. Ivanov, Igor Constantin; Sargent, Edward Hartley; Tian, Hui, Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom.

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9. Ivanov, Igor Constantin; Sargent, Edward Hartley; Tian, Hui, Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom.

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10. Ivanov, Igor Constantin; Sargent, Edward Hartley; Tian, Hui, Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom.

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11. Tian, Hui, Materials, systems and methods for optoelectronic devices.

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12. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.

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13. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.

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14. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.

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15. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.

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16. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.

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17. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.

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18. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.

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19. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.

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20. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.

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21. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.

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22. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.

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23. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.

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24. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.

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25. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.

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26. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.

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27. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.

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28. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.

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29. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.

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30. Tian, Hui; Sargent, Edward, Materials, systems and methods for optoelectronic devices.

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31. Schmidt, Gerhard; Kahn, Markus; Maier, Christian; Koch, Philipp; Steinbrenner, Juergen, Method for processing a semiconductor layer, method for processing a silicon substrate, and method for processing a silicon layer.

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32. Weimer, Ronald A., Method of fabricating an integrated circuit with a dielectric layer exposed to a hydrogen-bearing nitrogen source.

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33. Prein Frank, Method of fabricating semiconductor chips with silicide and implanted junctions.

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34. Ruelke, Hartmut; Huy, Katja; Romero, Karla, Method of forming a TEOS cap layer at low temperature and reduced deposition rate.

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35. Ghneim Said N. ; Fulford ; Jr. H. Jim, Method of making non-volatile memory device having a floating gate with enhanced charge retention.

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36. Lee, Ju-Il, Method of manufacturing image sensor for reducing dark current.

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37. Marcus Steven D. ; Glowacki Frederique,DEX ; Froeschle Barbara,DEX, Method of rapid thermal processing (RTP) of ion implanted silicon.

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38. Xia,Changfeng; Chen,Linlin, Modified clean chemistry and megasonic nozzle for removing backside CMP slurries.

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39. Chacon, Carlos M.; Chetlur, Sundar; Roy, Pradip K., Non-contact method for determining quality of semiconductor dielectrics.

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40. Chacon Carlos M. ; Roy Pradip K., Non-contact method for monitoring and controlling plasma charging damage in a semiconductor device.

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41. Ghneim Said N. ; Fulford ; Jr. H. Jim, Non-volatile memory device having a floating gate with enhanced charge retention.

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42. Sargent, Edward Hartley; Jain, Rajsapan; Ivanov, Igor Constantin; Malone, Michael R.; Brading, Michael Charles; Tian, Hui; Della Nave, Pierre Henri Rene; Lee, Jess Jan Young, Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode.

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43. Sargent, Edward Hartley; Jain, Rajsapan; Ivanov, Igor Constantin; Malone, Michael R.; Brading, Michael Charles; Tian, Hui; Della Nave, Pierre Henri Rene; Lee, Jess Jan Young, Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode.

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44. Sargent, Edward Hartley; Jain, Rajsapan; Ivanov, Igor Constantin; Malone, Michael R.; Brading, Michael Charles; Tian, Hui; Nave, Pierre Henri Rene Della; Lee, Jess Jan Young, Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode.

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45. Sargent, Edward Hartley; Koleilat, Ghada; Levina, Larissa, Photodetectors and photovoltaics based on semiconductor nanocrystals.

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46. Sargent, Edward Hartley; Koleilat, Ghada; Levina, Larissa, Photodetectors and photovoltaics based on semiconductor nanocrystals.

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47. Sargent, Edward Hartley; Koleilat, Ghada; Levina, Larissa, Photodetectors and photovoltaics based on semiconductor nanocrystals.

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48. Lee Ming-Kwei,TWX, Pretreatment method of a silicon wafer using nitric acid.

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49. Ridley Rodney S. ; Trost Jason R. ; Webb Raymond J., Process for forming high voltage junction termination extension oxide.

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50. Wolfgang Arndt DE; Klaus Graff DE; Alfons Hamberger DE; Petra Heim DE, Process for manufacturing a silicon semiconductor device having a reduced surface recombination velocity.

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51. Arndt Wolfgang,DEX ; Graff Klaus,DEX ; Hamberger Alfons,DEX ; Heim Petra,DEX, Process for reducing the surface recombination speed in silicon.

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52. Weimer,Ronald A., Process of forming an electrically erasable programmable read only memory with an oxide layer exposed to hydrogen and nitrogen.

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53. Sargent, Edward Hartley; Johnston, Keith William; Pattantyus-Abraham, Andras Geza; Clifford, Jason Paul, Schottky-quantum dot photodetectors and photovoltaics.

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54. Veeramma, Subhas Chandra Bose Jayappa, Semiconductor power device with passivation layers.

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