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Semiconductor device solder bump having intrinsic potential for forming an extended eutectic region and method for makin 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/44
출원번호 US-0236320 (1994-05-02)
발명자 / 주소
  • Greer Stuart E. (Austin TX)
출원인 / 주소
  • Motorola, Inc. (Schaumburg IL 02)
인용정보 피인용 횟수 : 154  인용 특허 : 0

초록

A semiconductor device (32) has an as-deposited solder bump (34) having the intrinsic potential for forming an extended eutectic region for simplified DCA applications. The as-deposited solder bump (34) has first tin layer (40) overlying the UBM of the bonding pad (14) on the device. The first tin l

대표청구항

A method for making a solder bump on a bonding pad of a semiconductor device, comprising the steps of: providing a first metal layer overlying the bonding pad to provide adhesion of the solder bump to the semiconductor device; providing a second metal layer overlying the first metal layer; forming i

이 특허를 인용한 특허 (154)

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