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Magnetoresistive linear displacement sensor, angular displacement sensor, and variable resistor using a moving domain wa 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G01B-007/00
  • G01R-033/02
  • H01L-043/00
출원번호 US-0130480 (1993-10-01)
발명자 / 주소
  • Prinz Gary A. (Alexandria VA)
출원인 / 주소
  • The United States of America as represented by the Secretary of the Navy (Washington DC 06)
인용정보 피인용 횟수 : 43  인용 특허 : 0

초록

A giant magnetoresistant displacement sensor includes at least one layered structure. This layered structure includes a harder magnetic (ferromagnetic or antiferromagnetic) layer having a fixed magnetic state, a second, softer, magnetic layer, and a metal layer interposed between and contacting thes

대표청구항

A sensor for measuring the displacement between a first workpiece and a second workpiece, comprising: a giant magnetoresistant strip fixed to said first workpiece, wherein said magnetoresistant strip further comprises at least one laminate structure, wherein said laminate structure comprises a first

이 특허를 인용한 특허 (43)

  1. Anthony M. Mack ; Zheng Gao ; Nurul Amin ; Sining Mao ; Richard Michel, Data head and method using a single antiferromagnetic material to pin multiple magnetic layers with differing orientation.
  2. Mack, Anthony M.; Gao, Zheng; Amin, Nurul; Mao, Sining; Michel, Richard, Data head and method using a single antiferromagnetic material to pin multiple magnetic layers with differing orientation.
  3. Hayden, Oliver; Rührig, Manfred, Device and method for concentrating and detecting magnetically marked cells in laminarly flowing media.
  4. Mao Sining ; Murdock Edward S., Enhanced spin-valve/GMR magnetic sensor with an insulating boundary layer.
  5. Roger Wappling SE, GMR sensor with a varying number of GMR layers.
  6. Chen, Lujun; Giusti, James H.; Fernandez-de-Castro, Juan J., Giant magnetoresistive sensor having selfconsistent demagnetization fields.
  7. Mao Sining ; Hu Shouxiang, Giant magnetoresistive sensor having weakly pinned ferromagnetic layer.
  8. Holloway Henry ; Kubinski David John, Giant magnetoresistors with high sensitivity and reduced hysteresis.
  9. Tiernan Timothy C. ; Jarratt ; Jr. Raymond L., Giant magnetorestive sensors and sensor arrays for detection and imaging of anomalies in conductive materials.
  10. Gary A. Prinz ; Michael M. Miller, High efficiency magnetic sensor for magnetic particles.
  11. Prinz, Gary A.; Miller, Michael M., High efficiency magnetic sensor for magnetic particles.
  12. Stuve, Steven R, Linear position sensor.
  13. Jian-Gang Zhu ; Youfeng Zheng ; Gary A. Prinz, Magnetic device and method of forming same.
  14. Yamamoto,Masahiko; Nakatani,Ryoichi; Endo,Yasushi, Magnetic memory array, method for recording in a magnetic memory array and method for reading out from a magnetic memory array.
  15. Zhu, Xiaochun; Zhu, Jian-Gang, Magnetic memory element and memory device including same.
  16. Yamamoto, Masahiko; Nakatani, Ryoichi; Endo, Yasushi, Magnetic memory, magnetic memory array, method for fabricating a magnetic memory, method for recording in a magnetic memory and method for reading out from a magnetic memory.
  17. Sugitani Nobuyoshi,JPX, Magnetic rotation detector for detecting characteristic of a rotary member.
  18. Masashi Sano JP; Yoshihiro Tsuchiya JP; Satoru Araki JP, Magnetoresistance effect film and magnetoresistance effect type head having specified antiferromagnetic promote layer.
  19. Umemoto Hideki,JPX ; Hiraoka Naoki,JPX ; Fukui Wataru,JPX ; Ohashi Yutaka,JPX ; Yokotani Masahiro,JPX, Magnetoresistance sensing device with increased magnetic field detection efficiency.
  20. Dahlberg E. Dan ; Moran Timothy J., Magnetoresistance sensor having minimal hysteresis problems.
  21. Tchertkov Igor ; Klinkhamer Jon, Magnetoresistive displacement sensor and variable resistor using a moving domain wall.
  22. Wincheski, Russell A.; Namkung, Min; Simpson, John W., Magnetoresistive flux focusing eddy current flaw detection.
  23. Mao, Sining; Mack, Anthony M.; Everitt, Brenda A.; Murdock, Edward S.; Gao, Zheng, Method of fabricating a spin valve/GMR sensor having a synthetic antiferromagnetic layer pinned by Mn-alloy.
  24. Prinz, Gary A.; Miller, Michael M., Method of making high efficiency magnetic sensor for magnetic particles.
  25. Huggins, Harold A., Methods of fabricating magnetoresistive memory devices.
  26. Knox,Peter; Cook,Neil; Golman,Klaes; Johannesson,Haukur; Axelsson,Oksar; Ardenkjaer Larsen,Jan Henrik, NMR spectroscopic in vitro assay using hyperpolarization.
  27. Engel Bradley N., Pinned synthetic anti-ferromagnet with oxidation protection layer.
  28. Moura, Jairo T.; Gilchrist, Ulysses; Caveney, Robert T., Sealed robot drive.
  29. Umemoto Hideki,JPX ; Hiraoka Naoki,JPX ; Fukui Wataru,JPX ; Ohashi Yutaka,JPX ; Yokotani Masahiro,JPX, Sensing device for detecting the angular displacement and relative position of a member of magnetic material.
  30. Halder,Ernst; Diegel,Marco; Mattheis,Roland; Steenbeck,Klaus, Sensor element for revolution counter.
  31. Diegel, Marco; Mattheis, Roland, Sensor element with laminated and spiral structure and without a power supply for a revolution counter.
  32. Saito, Akira, Spin injection magnetic domain wall displacement device and element thereof.
  33. Saito, Akira, Spin injection magnetic domain wall displacement device and element thereof.
  34. Everitt Brenda A. ; van Ek Johannes, Spin valve magnetoresistive sensor using permanent magnet biased artificial antiferromagnet layer.
  35. Mao, Sining; Mack, Anthony M.; Everitt, Brenda A.; Murdock, Edward S.; Gao, Zheng, Spin valve/GMR sensor using synthetic antiferromagnetic layer pinned by Mn-alloy having a high blocking temperature.
  36. Dahlberg E. Dan ; Moran Timothy J., Spin-valve magnetoresistance sensor having minimal hysteresis problems.
  37. Brenda A. Everitt, Storage system having read head utilizing GMR and AMr effects.
  38. Worledge, Daniel Christopher; Trouilloud, Philip Louis; Abraham, David William; Schmid, Joerg Dietrich, Techniques for electrically characterizing tunnel junction film stacks with little or no processing.
  39. Worledge, Daniel Christopher; Trouilloud, Philip Louis; Abraham, David William; Schmid, Joerg Dietrich, Techniques for electrically characterizing tunnel junction film stacks with little or no processing.
  40. Worledge, Daniel Christopher; Trouilloud, Philip Louis; Abraham, David William; Schmid, Joerg Dietrich, Techniques for electrically characterizing tunnel junction film stacks with little or no processing.
  41. Worledge, Daniel Christopher; Trouilloud, Philip Louis; Abraham, David William; Schmid, Joerg Dietrich, Techniques for electrically characterizing tunnel junction film stacks with little or no processing.
  42. Kobayashi, Nobukiyo; Yano, Takeshi; Ohnuma, Shigehiro; Shirakawa, Kiwamu; Masumoto, Tsuyoshi, Thin-film magnetic field sensor.
  43. Worledge, Daniel Christopher; Trouilloud, Philip Louis; Abraham, David William; Schmid, Joerg Dietrich, Wafer for electrically characterizing tunnel junction film stacks with little or no processing.
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