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| 국가/구분 | United States(US) Patent 등록 |
|---|---|
| 국제특허분류(IPC7판) |
|
| 출원번호 | US-0112759 (1993-08-25) |
| 발명자 / 주소 |
|
| 출원인 / 주소 |
|
| 인용정보 | 피인용 횟수 : 292 인용 특허 : 0 |
A system for polishing a semiconductor wafer includes a rotatable platen subassembly and a drive mechanism coupled to rotate the platen subassembly at a platen velocity. A polishing head supports and holds a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer f
A system for polishing a semiconductor wafer includes a rotatable platen subassembly and a drive mechanism coupled to rotate the platen subassembly at a platen velocity. A polishing head supports and holds a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face whereby individual regions of the wafer face have different polishing rates. The polishing head includes pressure applicators for applying various localized pressures on the individual regions of the semiconductor wafer to conform the wafer face to a selected contour. The system also includes a polish control subsystem for monitoring in situ the polishing rates at various regions of the semiconductor wafer. The polish control subsystem adjusts in situ the platen velocity and/or the individual localized pressures applied to the semiconductor wafer to change the polishing rates of the individual regions of the semiconductor wafer. The system can also be adapted to change other operational parameters, such as wafer velocity, wafer polishing path across the platen, slurry composition and flow rate (for CMP processes), and force applied to the wafer when contacting the platen. A method for polishing a semiconductor wafer is also described.
A method for polishing a semiconductor wafer comprising the following steps: providing a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly rotatable about a first axis, a
A method for polishing a semiconductor wafer comprising the following steps: providing a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly rotatable about a first axis, a polishing head which supports the semiconductor wafer for rotation about a second axis, and a polishing head displacement mechanism which moves the polishing head and wafer across the platen subassembly at an adjustable rate; using the wafer polishing assembly to polish a face of a semiconductor wafer at a polishing rate and a polishing uniformity according to a set of controllable operational parameters that upon variation change the polishing rate and polishing uniformity; monitoring in situ at least one of the operational parameters of the wafer polishing assembly; determining a set of desired operational parameters based upon the monitored operational parameters and outputting control information indicative of the desired operational parameters; and adjusting in situ at least one of the operational parameters in response to the control information to effectuate a new polishing rate and a new polishing uniformity and then continuing polishing of the semiconductor wafer face according to the new polishing rate and new polishing uniformity.
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