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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0260413 (1994-06-14) |
우선권정보 | JP-0174736 (1993-06-22); JP-0180754 (1993-06-25) |
발명자 / 주소 |
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출원인 / 주소 |
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인용정보 | 피인용 횟수 : 313 인용 특허 : 0 |
Method of fabricating TFTs starts with forming a nickel film selectively on a bottom layer which is formed on a substrate. An amorphous silicon film is formed on the nickel film and heated to crystallize it. The crystallized film is irradiated with infrared light to anneal it. Thus, a crystalline si
Method of fabricating TFTs starts with forming a nickel film selectively on a bottom layer which is formed on a substrate. An amorphous silicon film is formed on the nickel film and heated to crystallize it. The crystallized film is irradiated with infrared light to anneal it. Thus, a crystalline silicon film having excellent crystailinity is obtained. TFTs are built, using this crystalline silicon film.
A method of fabricating a semiconductor device comprising the steps of: forming a non-single crystal semiconductor film on a substrate; forming an insulating film on the semiconductor film; patterning the semiconductor film and the insulating forming a film containing a metal element for promoting c
A method of fabricating a semiconductor device comprising the steps of: forming a non-single crystal semiconductor film on a substrate; forming an insulating film on the semiconductor film; patterning the semiconductor film and the insulating forming a film containing a metal element for promoting crystallization of the semiconductor film, on the patterned insulating film and in contact with a side of the patterned semiconductor film; and starting the crystallization from the side of the patterned semiconductor film.
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