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Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous s 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
  • H01L-021/336
출원번호 US-0260413 (1994-06-14)
우선권정보 JP-0174736 (1993-06-22); JP-0180754 (1993-06-25)
발명자 / 주소
  • Zhang Hongyong (Kanagawa JPX) Teramoto Satoshi (Kanagawa JPX)
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd. (Kanagawa JPX 03)
인용정보 피인용 횟수 : 313  인용 특허 : 0

초록

Method of fabricating TFTs starts with forming a nickel film selectively on a bottom layer which is formed on a substrate. An amorphous silicon film is formed on the nickel film and heated to crystallize it. The crystallized film is irradiated with infrared light to anneal it. Thus, a crystalline si

대표청구항

A method of fabricating a semiconductor device comprising the steps of: forming a non-single crystal semiconductor film on a substrate; forming an insulating film on the semiconductor film; patterning the semiconductor film and the insulating forming a film containing a metal element for promoting c

이 특허를 인용한 특허 (313)

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  173. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Semiconductor and process for fabricating the same.
  174. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko, Semiconductor circuit and method of fabricating the same.
  175. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Semiconductor circuit for electro-optical device and method of manufacturing the same.
  176. Shunpei Yamazaki JP, Semiconductor device.
  177. Shunpei Yamazaki JP, Semiconductor device.
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  179. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device.
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  181. Yamazaki,Shunpei, Semiconductor device.
  182. Yamazaki Shunpei,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and a method of manufacturing the same.
  183. Hisashi Ohtani JP; Tamae Takano JP; Chiho Kokubo JP, Semiconductor device and fabricating method thereof.
  184. Hongyong Zhang JP; Hideto Ohnuma JP, Semiconductor device and fabrication method thereof.
  185. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Semiconductor device and fabrication method thereof.
  186. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Semiconductor device and fabrication method thereof.
  187. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki, Semiconductor device and fabrication method thereof.
  188. Zhang Hongyong,JPX ; Ohnuma Hideto,JPX, Semiconductor device and fabrication method thereof.
  189. Zhang, Hongyong; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  190. Shunpei Yamazaki JP, Semiconductor device and its manufacturing method.
  191. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP; Hisashi Ohtani JP; Toshiji Hamatani JP, Semiconductor device and its manufacturing method.
  192. Yamazaki Shunpei,JPX, Semiconductor device and its manufacturing method.
  193. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
  194. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
  195. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and its manufacturing method.
  196. Nakamura, Osamu; Kajiwara, Masayuki; Yamazaki, Shunpei; Ohnuma, Hideto, Semiconductor device and manufacturing method of the same.
  197. Nakamura,Osamu; Kajiwara,Masayuki; Yamazaki,Shunpei; Ohnuma,Hideto, Semiconductor device and manufacturing method of the same.
  198. Kokubo, Chiho; Shiga, Aiko; Tanada, Yoshifumi; Yamazaki, Shunpei, Semiconductor device and manufacturing method therefor.
  199. Shunpei Yamazaki JP; Hisashi Ohtani JP; Hideto Ohnuma JP; Satoshi Teramoto JP, Semiconductor device and manufacturing method thereof.
  200. Suzawa, Hideomi; Kusuyama, Yoshihiro, Semiconductor device and manufacturing method thereof.
  201. Suzawa, Hideomi; Kusuyama, Yoshihiro, Semiconductor device and manufacturing method thereof.
  202. Tanaka, Koichiro; Ohnuma, Hideto, Semiconductor device and manufacturing method thereof.
  203. Yamazaki, Shunpei; Kusumoto, Naoto; Ohnuma, Hideto; Tanaka, Koichiro, Semiconductor device and manufacturing method thereof.
  204. Yamazaki, Shunpei; Kusumoto, Naoto; Ohnuma, Hideto; Tanaka, Koichiro, Semiconductor device and manufacturing method thereof.
  205. Yamazaki,Shunpei; Kusumoto,Naoto; Ohnuma,Hideto; Tanaka,Koichiro, Semiconductor device and manufacturing method thereof.
  206. Zhang, Hongyong, Semiconductor device and manufacturing method thereof.
  207. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Semiconductor device and method for fabricating the same.
  208. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
  209. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
  210. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method for fabricating the same.
  211. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX, Semiconductor device and method for forming the same.
  212. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
  213. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
  214. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  215. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  216. Hiroki Adachi JP; Akira Takenouchi JP; Takeshi Fukada JP; Hiroshi Uehara JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
  217. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Takeshi Fukunaga JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
  218. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  219. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  220. Miyanaga,Akiharu; Ohtani,Hisashi; Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
  221. Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Yamazaki,Shunpei; Kuwabara,Hideaki, Semiconductor device and method for manufacturing the same.
  222. Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  223. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  224. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  225. Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
  226. Takemura,Yasuhiro, Semiconductor device and method for manufacturing the same.
  227. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Fukunaga Takeshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  228. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  229. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  230. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device and method for producing it.
  231. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.
  232. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.
  233. Yamazaki, Shunpei; Kusumoto, Naoto; Tanaka, Koichiro, Semiconductor device and method for producing the same.
  234. Yamazaki Shunpei,JPX, Semiconductor device and method of fabricating same.
  235. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method of fabricating same.
  236. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.
  237. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.
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  239. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method of fabricating same.
  240. Shunpei Yamazaki JP; Yasuhiko Takemura JP; Hongyong Zhang JP, Semiconductor device and method of fabricating the same.
  241. Takemura, Yasuhiko, Semiconductor device and method of fabricating the same.
  242. Takemura,Yasuhiko, Semiconductor device and method of fabricating the same.
  243. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX, Semiconductor device and method of fabricating the same.
  244. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX, Semiconductor device and method of fabricating the same.
  245. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method of fabricating the same.
  246. Hamada, Takashi; Murakami, Satoshi; Yamazaki, Shunpei; Nakamura, Osamu; Kajiwara, Masayuki; Koezuka, Junichi; Takayama, Toru, Semiconductor device and method of manufacturing the same.
  247. Hamada,Takashi; Murakami,Satoshi; Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Takayama,Toru, Semiconductor device and method of manufacturing the same.
  248. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method of manufacturing the same.
  249. Shunpei Yamazaki JP, Semiconductor device and method of manufacturing the same.
  250. Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
  251. Zhang Hongyong,JPX, Semiconductor device and method of manufacturing the same.
  252. Zhang Hongyong,JPX, Semiconductor device and method of manufacturing the same.
  253. Zhang, Hongyong, Semiconductor device and method of manufacturing the same.
  254. Zhang,Hongyong, Semiconductor device and method of manufacturing the same.
  255. Zhang, Hongyong; Ohnuma, Hideto; Takemura, Yasuhiko, Semiconductor device and process for fabricating the same.
  256. Zhang,Hongyong; Ohnuma,Hideto; Takemura,Yasuhiko, Semiconductor device and process for fabricating the same.
  257. Shunpei Yamazaki JP; Naoaki Yamaguchi JP; Setsuo Nakajima JP, Semiconductor device comprising a bottom gate type thin film transistor.
  258. Ohtani, Hisashi; Adachi, Hiroki; Miyanaga, Akiharu; Takayama, Toru, Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film.
  259. Hongyong Zhang JP; Toru Takayama JP; Yasuhiko Takemura JP; Akiharu Miyanaga JP; Hisashi Ohtani JP, Semiconductor device forming method.
  260. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Semiconductor device forming method.
  261. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi, Semiconductor device forming method.
  262. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor device having a catalyst enhanced crystallized layer.
  263. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device having a crystalline semiconductor film.
  264. Takemura Yasuhiko (Kanagawa JPX), Semiconductor device having a crystallized silicon thin film in which the crystallization direction is oriented either v.
  265. Zhang, Hongyong; Takayama, Toru, Semiconductor device having channel formation region comprising silicon and containing a group IV element.
  266. Zhang Hongyong,JPX, Semiconductor device having improved crystal orientation.
  267. Zhang Hongyong,JPX, Semiconductor device having improved crystal orientation.
  268. Yamazaki, Shunpei; Adachi, Hiroki; Kuwabara, Hideaki, Semiconductor device having semiconductor circuit comprising semiconductor element, and method for manufacturing same.
  269. Kousai Takamasa,JPX ; Makita Naoki,JPX ; Takayama Toru,JPX, Semiconductor device method for producing the same and liquid crystal display including the same.
  270. Ohtani, Hisashi; Takano, Tamae; Kokubo, Chiho, Semiconductor device method of manufacturing.
  271. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi, Semiconductor device structure.
  272. Yamazaki, Shunpei, Semiconductor device with heat-resistant gate.
  273. Yamazaki,Shunpei; Ohtani,Hisashi; Hiroki,Masaaki; Tanaka,Koichiro; Shiga,Aiko; Akiba,Mai, Semiconductor fabricating apparatus.
  274. Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
  275. Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
  276. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
  277. Ohtani Hisashi,JPX ; Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Miyanaga Akiharu,JPX, Semiconductor thin film and semiconductor device.
  278. Shunpei Yamazaki JP; Hisashi Ohtani JP; Toru Mitsuki JP; Akiharu Miyanaga JP; Yasushi Ogata JP, Semiconductor thin film and semiconductor device.
  279. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Mitsuki Toru,JPX ; Miyanaga Akiharu,JPX ; Ogata Yasushi,JPX, Semiconductor thin film and semiconductor device.
  280. Yamazaki, Shunpei; Ohtani, Hisashi; Mitsuki, Toru; Miyanaga, Akiharu; Ogata, Yasushi, Semiconductor thin film and semiconductor device.
  281. Yamazaki, Shunpei; Ohtani, Hisashi; Mitsuki, Toru; Miyanaga, Akiharu; Ogata, Yasushi, Semiconductor thin film and semiconductor device.
  282. Yamazaki, Shunpei; Ohtani, Hisashi; Mitsuki, Toru; Miyanaga, Akiharu; Ogata, Yasushi, Semiconductor thin film and semiconductor device.
  283. Yamazaki,Shunpei; Ohtani,Hisashi; Mitsuki,Toru; Miyanaga,Akiharu; Ogata,Yasushi, Semiconductor thin film and semiconductor device.
  284. Hisashi Ohtani JP; Akiharu Miyanaga JP; Takeshi Fukunaga JP; Hongyong Zhang JP, Semiconductor thin film transistor with crystal orientation.
  285. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Miyanaga Akiharu,JPX ; Fukunaga Takeshi,JPX, Semiconductor thin film, semiconductor device and manufacturing method thereof.
  286. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film, semiconductor device and manufacturing method thereof.
  287. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film, semiconductor device and manufacturing method thereof.
  288. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor, semiconductor device, and method for fabricating the same.
  289. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor, semiconductor device, and method for fabricating the same.
  290. Yamazaki,Shunpei; Takemura,Yasuhiko; Zhang,Hongyong; Takayama,Toru; Uochi,Hideki, Semiconductor, semiconductor device, and method for fabricating the same.
  291. Yamazaki,Shunpei; Ohtani,Hisashi; Hiroki,Masaaki; Tanaka,Koichiro; Shiga,Aiko; Akiba,Mai, Semiconductror fabricating apparatus.
  292. Yukihiko Nakata ; Apostolos Voutsas ; John Hartzell, Sputtered silicon target for fabrication of polysilicon thin film transistors.
  293. Yamazaki, Shunpei; Koyama, Jun; Ohtani, Hisashi, Thin film circuit.
  294. Yamazaki, Shunpei; Koyama, Jun; Ohtani, Hisashi, Thin film circuit.
  295. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Ohtani Hisashi,JPX, Thin film circuit with improved carrier mobility.
  296. Yamazaki, Shunpei; Miyanaga, Akiharu; Koyama, Jun; Fukunaga, Takeshi, Thin film semiconductor device and its manufacturing method.
  297. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Thin film transistor having grain boundaries with segregated oxygen and halogen elements.
  298. Lee, Seok Woon; Joo, Seung Ki, Thin film transistor including polycrystalline active layer and method for fabricating the same.
  299. So,Woo Young, Thin film transistor with multiple gates fabricated using super grain silicon crystallization.
  300. So,Woo Young, Thin film transistor with multiple gates using metal induced lateral crystalization and method of fabricating the same.
  301. So,Woo Young, Thin film transistor with multiple gates using metal induced lateral crystallization and method of fabricating the same.
  302. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.
  303. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.
  304. Yamazaki, Shunpei; Teramoto, Satoshi, Thin film type monolithic semiconductor device.
  305. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Thin-film transistor and fabrication method for same.
  306. Ohnuma Hideto,JPX ; Yamazaki Shunpei,JPX, Thin-film transistor and semiconductor device using thin-film transistors.
  307. Ohnuma, Hideto; Yamazaki, Shunpei, Thin-film transistor and semiconductor device using thin-film transistors.
  308. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Transistor and semiconductor device having columnar crystals.
  309. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko; Miyanaga, Akiharu; Ohtani, Hisashi, Transistor and semiconductor device having columnar crystals.
  310. Hideki Uochi JP; Yasuhiko Takemura JP, Transistor device and method of forming the same.
  311. Storey, Robson F.; Morgan, David L., Vinyl ether end-functionalized polyolefins.
  312. Storey, Robson F.; Morgan, David L., Vinyl ether end-functionalized polyolefins.
  313. Nanba Norihiro,JPX, Zoom lens and optical apparatus having the same.
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