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Polishing pads and methods for their use 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B24B-001/00
출원번호 US-0224768 (1994-04-08)
발명자 / 주소
  • Cook Lee M. (Steelville PA) Roberts John V. H. (Newark DE) Jenkins Charles W. (Newark DE) Pillai Raj R. (Newark DE)
출원인 / 주소
  • Rodel, Inc. (Newark DE 02)
인용정보 피인용 횟수 : 273  인용 특허 : 0

초록

An improved polishing pad is provided comprising a solid uniform polymer sheet having no intrinsic ability to absorb or transport slurry particles having during use a surface texture or pattern which has both large and small flow channels present simultaneously which permit the transport of slurry a

대표청구항

An improved polishing pad comprising a solid uniform polymer sheet with no intrinsic ability to absorb or transport slurry particles, said sheet in use having a surface texture or pattern comprising both large and smell flow channels which together permit the transport of polishing slurry containing

이 특허를 인용한 특허 (273)

  1. Bruxvoort, Wesley J., Abrasive article suitable for modifying a semiconductor wafer.
  2. Nelson, Eric W.; Pitzen, James F., Abrasive article with universal hole pattern.
  3. Aoki, Toru; Yoda, Akira; Tachihara, Takayuki, Abrasive pad and method for abrading glass, ceramic, and metal materials.
  4. Chelle,Philippe H., Alumina abrasive for chemical mechanical polishing.
  5. Cherian, Isaac K.; Carter, Phillip; Chamberlain, Jeffrey P.; Moeggenborg, Kevin; Boldridge, David W., Anionic abrasive particles treated with positively charged polyelectrolytes for CMP.
  6. Cherian,Isaac K; Carter,Phillip; Chamberlain,Jeffrey P.; Moeggenborg,Kevin; Boldridge,David W., Anionic abrasive particles treated with positively charged polyelectrolytes for CMP.
  7. Seth, Anuj, Anti-loading abrasive article.
  8. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  9. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  10. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  11. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  12. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  13. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.
  14. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for semiconductor processing operations.
  15. Cook Lee Melbourne ; James David B. ; Budinger William D. ; Roberts John V. H. ; Oliver Michael R. ; Chechik Nina G. ; Levering ; Jr. Richard M., Apparatus and methods for chemical-mechanical polishing of semiconductor wafers.
  16. Cook, Lee Melbourne; James, David B.; Budinger, William D., Apparatus and methods for chemical-mechanical polishing of semiconductor wafers.
  17. James David B. ; Budinger William D. ; Roberts John V. H. ; Oliver Michael R. ; Chechik Nina G. ; Levering ; Jr. Richard M. ; Cook Lee Melbourne, Apparatus and methods for chemical-mechanical polishing of semiconductor wafers.
  18. Cook Lee Melbourne ; James David B. ; Budinger William D., Apparatus and methods for recirculating chemical-mechanical polishing of semiconductor wafers.
  19. Koetas,Joseph P.; Leviton,Alan E.; Norton,Kari Ell; November,Samuel J.; Robertson,Malcolm W.; Saikin,Alan H., Apparatus for forming a polishing pad having a reduced striations.
  20. James, David B.; Roberts, John V. H., Apparatus for forming a porous reaction injection molded chemical mechanical polishing pad.
  21. Kolesar,David M.; Post,Robert L.; Saikin,Alan H.; Sarafinas,Aaron, Apparatus for forming a striation reduced chemical mechanical polishing pad.
  22. Yellitz Bradley J. ; Burke Peter A., Apparatuses and methods for polishing semiconductor wafers.
  23. Kollodge, Jeffrey S.; Messner, Robert P., Article suitable for chemical mechanical planarization processes.
  24. Scott, Diane B.; Baker, III, Arthur Richard; Zhang, Tao, Base-pad for a polishing pad.
  25. Choffat Christopher C. ; Griffin Justin J., Brush for scrubbing semiconductor wafers.
  26. Beardsley Gary J. ; Huynh Cuc Kim ; Messier Steven J. ; Walker David L., CMP apparatus with built-in slurry distribution and removal.
  27. Beardsley Gary J. ; Huynh Cuc Kim ; Messier Steven J. ; Walker David L., CMP apparatus with built-in slurry distribution and removal.
  28. de Rege Thesauro, Francesco; Bayer, Benjamin P., CMP composition with a polymer additive for polishing noble metals.
  29. Sun, Tao, CMP compositions containing iodine and an iodine vapor-trapping agent.
  30. Sun, Tao, CMP compositions containing silver salts.
  31. Reiss, Brian; Whitener, Glenn, CMP compositions selective for oxide and nitride with high removal rate and low defectivity.
  32. Reiss, Brian; Willhoff, Michael; Mateja, Daniel, CMP compositions selective for oxide and nitride with high removal rate and low defectivity.
  33. Brusic, Vlasta; De Rege, Francesco M.; Moeggenborg, Kevin J.; Cherian, Isaac K.; Zhou, Renjie, CMP method for noble metals.
  34. DeRege Thesauro,Francesco; Brusic,Vlasta; Bayer,Benjamin P., CMP method for noble metals.
  35. Kramer, Steve, CMP pad having isolated pockets of continuous porosity and a method for using such pad.
  36. Kramer, Steve, CMP pad having isolated pockets of continuous porosity and a method for using such pad.
  37. Kramer, Steve, CMP pad having isolated pockets of continuous porosity and a method for using such pad.
  38. Dornfeld,David; Lee,Sunghoon, CMP pad with designed surface features.
  39. Tolles Robert D. ; Mear Steven T. ; Prabhu Gopalakrishna B. ; Zuniga Steven ; Chen Hung, CMP polishing pad.
  40. Tolles, Robert D.; Mear, Steven T.; Prabhu, Gopalakrishna B.; Zuniga, Steven; Chen, Hung, CMP polishing pad.
  41. Grumbine, Steven K., Catalyst/oxidizer-based CMP system for organic polymer films.
  42. Lacy, Michael S.; Boyd, John M., Chemical mechanical planarization belt assembly and method of assembly.
  43. Mandigo, Glenn C.; Barker, II, Ross E.; Lack, Craig D.; Sullivan, Ian G.; Goldberg, Wendy B., Chemical mechanical planarization of metal substrates.
  44. Jensen Alan J. ; Thornton Brian S., Chemical mechanical planarization or polishing pad with sections having varied groove patterns.
  45. Jensen, Alan J.; Thornton, Brian S., Chemical mechanical planarization or polishing pad with sections having varied groove patterns.
  46. Jensen, Alan J.; Thornton, Brian S., Chemical mechanical planarization or polishing pad with sections having varied groove patterns.
  47. Smith, Christopher W.; White, John M., Chemical mechanical polisher with grooved belt.
  48. Weinstein, Barry; Ghosh, Tirthankar, Chemical mechanical polishing compositions and methods relating thereto.
  49. Tran,Joe G.; Kaneshige,Chad J.; Kirkpatrick,Brian K., Chemical mechanical polishing method and apparatus.
  50. Motonari, Masayuki; Ueno, Tomikazu; Yamamoto, Masahiro; Tai, Yuugo; Miyauchi, Hiroyuki, Chemical mechanical polishing pad.
  51. Donohue,Timothy James; Balagani,Venkata R.; Beau de Lomenie,Romain, Chemical mechanical polishing pad for controlling polishing slurry distribution.
  52. De Rege Thesauro,Francesco; Brusic,Vlasta; Bayer,Benjamin P., Chemical-mechanical polishing of metals in an oxidized form.
  53. Cruz Jose Luis ; Messier Steven James ; Sturtevant Douglas Keith ; Tiersch Matthew Thomas, Composite polish pad for CMP.
  54. Karl M. Robinson ; Whonchee Lee, Composition and method of formation and use therefor in chemical-mechanical polishing.
  55. Robinson, Karl M.; Lee, Whonchee, Composition and method of formation and use therefor in chemical-mechanical polishing.
  56. De Rege Thesauro, Francesco; Grumbine, Steven; Carter, Phillip; Li, Shoutian; Zhang, Jian; Schroeder, David; Tsai, Ming-Shih, Compositions and methods for CMP of semiconductor materials.
  57. Hardy, L. Charles; Kranz, Heather K.; Wood, Thomas E.; Kaisaki, David A.; Gagliardi, John J.; Clark, John C.; Savu, Patricia M.; Clark, Philip G., Compositions and methods for modifying a surface suited for semiconductor fabrication.
  58. Chelle, Philippe H.; Small, Robert J., Compositions and methods for rapidly removing overfilled substrates.
  59. Chelle,Philippe H.; Small,Robert J., Compositions and methods for rapidly removing overfilled substrates.
  60. Carter,Phillip W.; Zhang,Jian; Grumbine,Steven K.; De Rege Thesauro,Francesco, Compositions and methods for tantalum CMP.
  61. De Rege Thesauro, Francesco; Grumbine, Steven; Carter, Phillip; Li, Shoutian; Zhang, Jian; Schroeder, David; Tsai, Ming-Shih, Compositions for CMP of semiconductor materials.
  62. Bum Young Myoung KR; Su Nam Yu KR, Conditioner for polishing pad and method for manufacturing the same.
  63. Kirchner Eric J. ; Kalpathy-Cramer Jayashree, Controlling groove dimensions for enhanced slurry flow.
  64. Wang, Pingshan; Song, Chunrong, Dielectric spectrometers with planar nanofluidic channels.
  65. Bajaj, Rajeev, Electro-chemical mechanical planarization pad with uniform polish performance.
  66. Bajaj, Rajeev, Electro-method and apparatus for improved chemical mechanical planarization pad with uniform polish performance.
  67. Eppert, Jr., Stanley E.; Manzonie, Adam; Freeman, Peter W.; Langlois, Elizabeth A., Eliminating air pockets under a polished pad.
  68. Wiswesser,Andreas Norbert; Schoenleber,Walter, Endpoint detection with multiple light beams.
  69. Feng, Chung-Chih; Wu, Chun-Wei; Chiang, Kun-Lin; Huang, Yung-Ching, Extensible artificial leather and method for making the same.
  70. Goetz, Douglas P., Fixed abrasive article for use in modifying a semiconductor wafer.
  71. Goetz,Douglas P., Fixed abrasive article for use in modifying a semiconductor wafer.
  72. Lombardo, Brian, Foam semiconductor polishing belts and pads.
  73. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus.
  74. Lombardo, Brian; Otto, Jeffrey P., Froth and method of producing froth.
  75. Brusic,Vlasta; Zhou,Renjie; Thompson,Christopher, Gold CMP composition and method.
  76. James, David B.; Vishwanathan, Arun; Cook, Lee Melbourne; Burke, Peter A.; Shidner, David; So, Joseph K.; Roberts, John V. H., Grooved polishing pads for chemical mechanical planarization.
  77. James, David B.; Vishwanathan, Arun; Cook, Lee Melbourne; Burke, Peter A.; Shidner, David; So, Joseph K.; Roberts, John V. H., Hydrolytically stable grooved polishing pads for chemical mechanical planarization.
  78. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
  79. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.
  80. Pant Anil K. ; Jairath Rahul ; Mishra Kamal ; Chadda Saket ; Krusell Wilbur C., Integrated pad and belt for chemical mechanical polishing.
  81. Pant, Anil K.; Jairath, Rahul; Mishra, Kamal; Chadda, Saket; Krusell, Wilbur C., Integrated pad and belt for chemical mechanical polishing.
  82. Redeker, Fred C.; Birang, Manoocher; Li, Shijian; Somekh, Sasson, Linear polishing sheet with window.
  83. Redeker,Fred C.; Birang,Manoocher; Li,Shijian; Somekh,Sasson, Linear polishing sheet with window.
  84. Prasad,Abaneshwar, Low surface energy CMP pad.
  85. Tolles, Robert D., Material for use in carrier and polishing pads.
  86. Vacassy, Robert, Methanol-containing silica-based CMP compositions.
  87. Bajaj, Rajeev, Method and apparatus for CMP conditioning.
  88. Laursen, Thomas; Zhang, Guangying, Method and apparatus for controlled slurry distribution.
  89. Boyd, John M.; Lacy, Michael S., Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool.
  90. Boyd, John M.; Lacy, Michael S., Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool.
  91. John M. Boyd ; Michael S. Lacy, Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool.
  92. Bajaj, Rajeev, Method and apparatus for improved chemical mechanical planarization and CMP pad.
  93. Bajaj, Rajeev; Narayanswami, Natraj; Nguyen, Bang C., Method and apparatus for improved chemical mechanical planarization pad with pressure control and process monitor.
  94. Jairath Rahul ; Pecen Jiri ; Chadda Saket ; Krusell Wilbur C. ; Cutini Jerauld J. ; Engdahl Erik H., Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher.
  95. Jairath Rahul ; Pecen Jiri ; Chadda Saket ; Krusell Wilbur C. ; Cutini Jerauld J. ; Engdahl Erik H., Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher.
  96. Pecen Jiri ; Chadda Saket ; Jairath Rahul ; Krusell Wilbur C., Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing.
  97. Pecen, Jiri; Chadda, Saket; Jairath, Rahul; Krusell, Wilbur C., Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing.
  98. Pecen Jiri ; Fielden John ; Chadda Saket ; LaComb ; Jr. Lloyd J. ; Jairath Rahul ; Krusell Wilbur C., Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing.
  99. Robinson Karl M., Method and apparatus for increasing chemical-mechanical-polishing selectivity.
  100. Robinson, Karl M., Method and apparatus for increasing chemical-mechanical-polishing selectivity.
  101. Robinson Karl M., Method and apparatus for increasing-chemical-polishing selectivity.
  102. Moore Scott E., Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates.
  103. Moore, Scott E., Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates.
  104. Moore, Scott E., Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates.
  105. Moore, Scott E., Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates.
  106. Moore, Scott E., Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates.
  107. Moore, Scott E., Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates.
  108. Scott E. Moore, Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates.
  109. Scott E. Moore, Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates.
  110. Scott E. Moore, Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates.
  111. Scott E. Moore, Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates.
  112. Grabbe, Alexis; Bjelopavlic, Mick; Hull, Ashley S.; Haler, Michele L.; Zhang, Guoqiang (David); Erk, Henry F.; Xin, Yun-Biao, Method and apparatus for processing a semiconductor wafer using novel final polishing method.
  113. Chadda,Saket, Method and apparatus for the electrochemical deposition and removal of a material on a workpiece surface.
  114. Kramer Stephen J. ; Meikle Scott, Method and apparatus for uniformly planarizing a microelectronic substrate.
  115. Kramer, Stephen J.; Meikle, Scott, Method and apparatus for uniformly planarizing a microelectronic substrate.
  116. Kramer, Stephen J.; Meikle, Scott, Method and apparatus for uniformly planarizing a microelectronic substrate.
  117. Kramer, Stephen J.; Meikle, Scott, Method and apparatus for uniformly planarizing a microelectronic substrate.
  118. Stephen J. Kramer ; Scott Meikle, Method and apparatus for uniformly planarizing a microelectronic substrate.
  119. Birang, Manoocher; Swedek, Boguslaw A.; Kim, Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.
  120. Birang,Manoocher; Swedek,Boguslaw A.; Kim,Hyeong Cheol, Method and apparatus of eddy current monitoring for chemical mechanical polishing.
  121. Kodate Tadao (2-30-1 Miyahara ; Ohmiya-Shi ; Saitama-Ken JPX), Method and composition for polishing painted surfaces.
  122. Schroeder, David J.; Carter, Phillip; Chamberlain, Jeffrey P.; Miller, Kyle; Cherian, Isaac K., Method for copper CMP using polymeric complexing agents.
  123. Kramer, Steve, Method for fabricating a CMP pad having isolated pockets of continuous porosity.
  124. James,David B.; Kulp,Mary Jo; Roberts,John V. H., Method for forming a porous polishing pad.
  125. James,David B.; Roberts,John V. H., Method for forming a porous reaction injection molded chemical mechanical polishing pad.
  126. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Method for in-situ endpoint detection for chemical mechanical polishing operations.
  127. Crevasse Annette Margaret ; Easter William Graham ; Maze John Albert ; Miceli ; III Frank, Method for making porous CMP article.
  128. Jones, Jeremy; Sevilla, Roland K., Method for manufacturing a polishing pad having a compressed translucent region.
  129. Prasad,Abaneshwar, Method for manufacturing microporous CMP materials having controlled pore size.
  130. Renteln, Peter, Method for optimizing the planarizing length of a polishing pad.
  131. Hajime Hirofumi,JPX ; Yubitani Toshiharu,JPX, Method for polishing the top and bottom of a semiconductor wafer simultaneously.
  132. Jensen, Michelle; Qian, Bainian; Yeh, Fengji; DeGroot, Marty W.; Islam, Mohammad T.; Van Hanehem, Matthew Richard; String, Darrell; Murnane, James; Hendron, Jeffrey James; Nowland, John G., Method of chemical mechanical polishing a substrate.
  133. David, Kyle W., Method of fabricating a polishing pad having an optical window.
  134. Swedek,Boguslaw A.; Birang,Manoocher, Method of forming a polishing pad for endpoint detection.
  135. Koetas,Joseph P.; Leviton,Alan E.; Norton,Kari Ell; November,Samuel J.; Robertson,Malcolm W.; Saikin,Alan H., Method of forming a polishing pad having reduced striations.
  136. Birang, Manoocher; Gleason, Allan; Guthrie, William L., Method of forming a transparent window in a polishing pad.
  137. Wiswesser, Andreas Norbert; Oshana, Ramiel; Hughes, Kerry F.; Rohde, Jay; Huo, David Datong; Benvegnu, Dominic J., Method of making and apparatus having polishing pad with window.
  138. Cook Lee Melbourne ; James David B. ; Chechik Nina G. ; Budinger William D., Method of manufacturing a polymeric polishing pad having photolithographically induced surface pattern(s).
  139. Shih,Wen Chang; Chang,Yung Chung; Chu,Min Kuei; Wei,Lung Chen, Method of manufacturing polishing pad.
  140. Shen James ; Costas Wesley D., Method of polishing.
  141. Carter, Phillip W.; Johns, Timothy P., Method of polishing a silicon-containing dielectric.
  142. Zhang,Jian; Sun,Fred; Wang,Shumin; Cherian,Isaac K.; Klingenberg,Eric H., Method of polishing a substrate with a polishing system containing conducting polymer.
  143. Walter J. Urbanavage ; Heinz F. Reinhardt, Method of polishing using a polishing pad.
  144. Stuart L. Meyer, Methods and apparatus for chemical mechanical planarization using a microreplicated surface.
  145. Bajaj, Rajeev; Chen, Hung Chih, Methods and apparatus for conditioning of chemical mechanical polishing pads.
  146. Fruitman Clinton O., Methods and apparatus for the chemical mechanical planarization of electronic devices.
  147. Fruitman,Clinton O., Methods and apparatus for the chemical mechanical planarization of electronic devices.
  148. Chen, Jian; Cruden, Karen Chu; Duan, Xiangfeng; Liu, Chao; Parce, J. Wallace, Methods and devices for forming nanostructure monolayers and devices including such monolayers.
  149. Chen, Jian; Cruden, Karen Chu; Duan, Xiangfeng; Liu, Chao; Parce, J. Wallace, Methods and devices for forming nanostructure monolayers and devices including such monolayers.
  150. Chen, Jian; Cruden, Karen Chu; Duan, Xiangfeng; Liu, Chao; Parce, J. Wallace, Methods and devices for forming nanostructure monolayers and devices including such monolayers.
  151. Chen, Jian; Duan, Xiangfeng; Liu, Chao; Nallabolu, Madhuri; Parce, J. Wallace; Ranganathan, Srikanth, Methods and devices for forming nanostructure monolayers and devices including such monolayers.
  152. Chen, Jian; Duan, Xiangfeng; Liu, Chao; Nallabolu, Madhuri; Parce, J. Wallace; Ranganathan, Srikanth, Methods and devices for forming nanostructure monolayers and devices including such monolayers.
  153. Oliver, Michael R., Methods for chemical-mechanical polishing of semiconductor wafers.
  154. Prasad, Abaneshwar, Microporous polishing pads.
  155. Prasad, Abaneshwar, Microporous polishing pads.
  156. Prasad, Abaneshwar, Microporous polishing pads.
  157. Prasad, Abaneshwar, Microporous polishing pads.
  158. Kirchner Eric J. ; Kalpathy-Cramer Jayashree, Modifying contact areas of a polishing pad to promote uniform removal rates.
  159. Roberts John V. H. ; Cook Lee Melbourne ; James David B. ; Reinhardt Heinz F., Mosaic polishing pads and methods relating thereto.
  160. Tsai, Stan D.; Chang, Shou-Sung; Chen, Liang-Yuh, Multi-layer polishing pad.
  161. Duboust, Alain; Chang, Shou-Sung; Lu, Wei; Neo, Siew; Wang, Yan; Manens, Antoine P.; Moon, Yongsik, Multi-layer polishing pad for low-pressure polishing.
  162. Murnane, James; Qian, Bainian; Nowland, John G.; Jensen, Michelle K.; Hendron, Jeffrey James; DeGroot, Marty W.; James, David B.; Yeh, Fengji, Multilayer chemical mechanical polishing pad stack with soft and conditionable polishing layer.
  163. Tolles, Robert D., Multilayer polishing pad and method of making.
  164. Renteln,Peter, Optimized grooving structure for a CMP polishing pad.
  165. Bajaj, Rajeev, Pad conditioner and method.
  166. Bajaj, Rajeev, Pad conditioner design and method of use.
  167. Small,Robert J.; Frey,Donald William; Tredinnick,Bruce; Hayden,Christopher G., Particulate or particle-bound chelating agents.
  168. Zhang Liming ; Weling Milind Ganesh, Patterned polishing pad for use in chemical mechanical polishing of semiconductor wafers.
  169. Miyazawa, Makoto, Polisher and polishing method.
  170. Bunyan,Michael H.; Clement,Thomas A.; Hannafin,John J.; LaRosee,Marc E.; Young,Kent M., Polishing article for electro-chemical mechanical polishing.
  171. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing assembly with a window.
  172. Ishikawa, Akira; Senga, Tatsuya, Polishing body, polisher, polishing method, and method for producing semiconductor device.
  173. Carter, Phillip W.; Johns, Timothy, Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios.
  174. Carter,Phillip W.; Johns,Timothy P., Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios.
  175. Dysard, Jeffrey M.; Johns, Timothy P., Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios.
  176. Dysard, Jeffrey M.; Johns, Timothy P., Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios.
  177. Dysard, Jeffrey; Anjur, Sriram; Grumbine, Steven; White, Daniela; Ward, William, Polishing composition and method utilizing abrasive particles treated with an aminosilane.
  178. Grumbine, Steven; Li, Shoutian; Ward, William; Singh, Pankaj; Dysard, Jeffrey, Polishing composition and method utilizing abrasive particles treated with an aminosilane.
  179. Cherian, Isaac K.; Zhang, Jian; Sun, Fred; Wang, Shumin; Klingenberg, Eric H., Polishing composition containing conducting polymer.
  180. Wang, Yu-Piao, Polishing method, polishing pad, and polishing system.
  181. Chiu, Allen; Chen, Shao-Yu; Jeng, Yu-Lung, Polishing pad.
  182. Park, Jaehong; Matsumura, Shinichi; Yoshida, Kouichi; Shigeta, Yoshitane; Kinoshita, Masaharu, Polishing pad.
  183. Lukanc Todd ; Sahota Kashmir S., Polishing pad and method for polishing porous materials.
  184. Wang, Yu-Piao; Ouyang, Yun-Liang, Polishing pad and method of fabrication.
  185. Preston,Spencer; Hutchins,Doug; Hymes,Steve, Polishing pad and method of making same.
  186. Kollodge, Jeffrey S.; Messner, Robert P., Polishing pad and method of use thereof.
  187. Doi, Toshiro; Seshimo, Kiyoshi; Takagi, Masataka; Kashiwada, Hiroshi, Polishing pad and polishing method.
  188. Bajaj, Rajeev, Polishing pad composition.
  189. Newell, Kelly J., Polishing pad comprising a filled translucent region.
  190. Prasad,Abaneshwar, Polishing pad comprising biodegradable polymer.
  191. Prasad,Abaneshwar, Polishing pad comprising hydrophobic region and endpoint detection port.
  192. Jiang, Lei; Shankar, Sadasivan; Fischer, Paul, Polishing pad design.
  193. Anjur Sriram P. ; Downing William C., Polishing pad for a semiconductor substrate.
  194. Sevilla Roland K. ; Kaufman Frank B. ; Anjur Sriram P., Polishing pad for a semiconductor substrate.
  195. Swedek, Boguslaw A.; Birang, Manoocher, Polishing pad for endpoint detection and related methods.
  196. Swedek, Boguslaw A.; Birang, Manoocher, Polishing pad for endpoint detection and related methods.
  197. Birang, Manoocher; Gleason, Allan, Polishing pad for in-situ endpoint detection.
  198. Cooper, Richard D.; Fathauer, Paul; Mroczek-Petroski, Angela; Perry, David; Petroski, James J., Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same.
  199. Petroski,Angela; Cooper,Richard D.; Fathauer,Paul; Yesnik,Marc Andrew, Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same.
  200. Petroski, Angela; Cooper, Richard D.; Fathauer, Paul; Yesnik, Marc Andrew, Polishing pad for use in chemical?mechanical planarization of semiconductor wafers and method of making same.
  201. Bennett Doyle E. ; Osterheld Thomas H. ; Redeker Fred C. ; Addiego Ginetto, Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus.
  202. Bennett Doyle E. ; Redeker Fred C. ; Osterheld Thomas H. ; Addiego Ginnetto, Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus.
  203. Osterheld, Thomas H.; Ko, Sen-Hou, Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus.
  204. Osterheld, Thomas H; Ko, Sen-Hou, Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus.
  205. Osterheld Tom ; Ko Sen-hou, Polishing pad having a grooved pattern for use in a chemical mechanical polishing system.
  206. Bennett, Doyle E.; Osterheld, Thomas H.; Redeker, Fred C.; Addiego, Ginetto, Polishing pad having a grooved pattern for use in chemical mechanical polishing.
  207. Osterheld, Thomas H.; Ko, Sen-Hou, Polishing pad having a grooved pattern for use in chemical mechanical polishing.
  208. Pinheiro, Barry Scott; Naugler, Steven, Polishing pad having an advantageous micro-texture and methods relating thereto.
  209. Budinger, William D.; Roberts, John V. H., Polishing pad with a transparent portion.
  210. Prasad, Abaneshwar, Polishing pad with microporous regions.
  211. Wiswesser, Andreas Norbert; Swedek, Boguslaw A., Polishing pad with transparent window.
  212. Tolles, Robert D., Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus.
  213. Tolles, Robert D., Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus.
  214. Tolles,Robert D., Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus.
  215. Swedek, Boguslaw A.; Birang, Manoocher, Polishing pad with two-section window having recess.
  216. Wiswesser,Andreas Norbert, Polishing pad with window.
  217. Wiswesser,Andreas Norbert, Polishing pad with window.
  218. Wiswesser,Andreas Norbert; Oshana,Ramiel; Hughes,Kerry F.; Rohde,Jay; Huo,David Datong; Benvegnu,Dominic J., Polishing pad with window.
  219. Birang,Manoocher; Gleason,Allan; Guthrie,William L., Polishing pad with window and method of fabricating a window in a polishing pad.
  220. Tanaka Koichi,JPX ; Morita Koji,JPX ; Takaku Tsutomu,JPX, Polishing pad, method and apparatus for treating polishing pad and polishing method.
  221. David B. James ; Lee Melbourne Cook ; Arthur Richard Baker, Polishing pads and methods relating thereto.
  222. David B. James ; Lee Melbourne Cook ; Arthur Richard Baker, Polishing pads and methods relating thereto.
  223. John V. H. Roberts ; David B. James ; Lee Melbourne Cook ; Charles W. Jenkins, Polishing pads and methods relating thereto.
  224. Roberts John H. V. ; James David B. ; Cook Lee Melbourne, Polishing pads and methods relating thereto.
  225. Roberts John H. V. ; James David B. ; Cook Lee Melbourne, Polishing pads and methods relating thereto.
  226. Roberts John V. H. ; James David B. ; Cook Lee Melbourne, Polishing pads and methods relating thereto.
  227. Roberts John V. H. ; James David B. ; Cook Lee Melbourne ; Jenkins Charles W., Polishing pads and methods relating thereto.
  228. Roberts, John H. V.; James, David B.; Cook, Lee Melbourne, Polishing pads and methods relating thereto.
  229. Roberts, John H. V.; James, David B.; Cook, Lee Melbourne, Polishing pads and methods relating thereto.
  230. Roberts, John H. V; James, David B.; Cook, Lee Melbourne, Polishing pads and methods relating thereto.
  231. Roberts, John V. H.; James, David B.; Cook, Lee Melbourne; Bakule, Ronald D., Polishing pads and methods relating thereto.
  232. Roberts, John V. H.; James, David B.; Cook, Lee Melbourne; Jenkins, Charles W., Polishing pads and methods relating thereto.
  233. Lehuu, Duy K.; Meyer, Kenneth A. P.; David, Moses M., Polishing pads and systems and methods of making and using the same.
  234. Lehuu, Duy K.; Meyer, Kenneth A. P.; David, Moses M., Polishing pads and systems and methods of making and using the same.
  235. Sevilla Roland K. ; Kaufman Frank B. ; Anjur Sriram P., Polishing pads for a semiconductor substrate.
  236. David B. James ; Arun Vishwanathan ; Lee Melbourne Cook ; Peter A. Burke ; David Shidner, Polishing pads for chemical mechanical planarization.
  237. James, David B.; Vishwanathan, Arun; Cook, Lee Melbourne; Burke, Peter A.; Shidner, David, Polishing pads for chemical mechanical planarization.
  238. Vishwanathan, Arun; James, David B.; Cook, Lee Melbourne; Burke, Peter A.; Shidner, David, Polishing pads for chemical mechanical planarization.
  239. Choi, Jae-Kwang; Yoon, Bo-Un; Hong, Myung-Ki, Polishing pads including sidewalls and related polishing apparatuses.
  240. Birang,Manoocher; Swedek,Boguslaw A., Polishing pads useful for endpoint detection in chemical mechanical polishing.
  241. Dudovicz, Walter, Polishing silicon wafers.
  242. Dudovicz, Walter, Polishing silicon wafers.
  243. Ladjias, Andreas C., Polishing system.
  244. Wasilczyk, George; Muncy, Brent; Daskiewich, Scott, Polymeric lapping materials, media and systems including polymeric lapping material, and methods of forming and using same.
  245. Cook Lee Melbourne ; James David B. ; Chechik Nina G. ; Budinger William D., Polymeric polishing pad having photolithographically induced surface patterns(s) and methods relating thereto.
  246. Rach Joseph ; Leach Douglas, Polyurethane composition with (meth)acrylate end groups useful in the manufacture of polishing pads.
  247. Kramer, Stephen J.; Meikle, Scott G., Reduction of surface roughness during chemical mechanical planarization (CMP).
  248. Stephen J. Kramer ; Scott G. Meikle, Reduction of surface roughness during chemical mechanical planarization(CMP).
  249. Baker ; III Arthur Richard, Scored polishing pad and methods related thereto.
  250. Arthur Richard Baker, III, Scored polishing pad and methods relating thereto.
  251. Murnane, James; Qian, Bainian; Nowland, John G.; Jensen, Michelle K.; Hendron, Jeffrey James; DeGroot, Marty W.; James, David B.; Yeh, Fengji, Soft and conditionable chemical mechanical polishing pad stack.
  252. Qian, Bainian; Jensen, Michelle K.; DeGroot, Marty W.; Repper, Angus; Murnane, James; Hendron, Jeffrey James; Nowland, John G.; James, David B.; Yeh, Fengji, Soft and conditionable chemical mechanical window polishing pad.
  253. Elliott Richard L. (Meridian ID) Walker Michael A. (Boise ID), Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers.
  254. Wang,Lung Chuan; Feng,Chung Chih; Cheng,Kuo Kuang; Cheng,Ta Min; Lin,Chih Yi; Chang,Kuan Hsiang; Yang,Gao Long, Substrate of artificial leather including ultrafine fibers and methods for making the same.
  255. Tolles, Robert D., Substrate polishing apparatus.
  256. Tolles Robert D., Substrate polishing article.
  257. Tolles, Robert D., Substrate polishing article.
  258. Tolles, Robert D., Substrate polishing article.
  259. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  260. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  261. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  262. Birang, Manoocher; Pyatigorsky, Grigory, Substrate polishing metrology using interference signals.
  263. Miller, III, Paul David; Dehn, Dennis L., Surface polishing applicator system and method.
  264. Swedek,Boguslaw A.; Birang,Manoocher, System for endpoint detection with polishing pad.
  265. Kirchner, Eric J., Through-pad drainage of slurry during chemical mechanical polishing.
  266. Prasad,Abaneshwar, Transparent microporous materials for CMP.
  267. Prasad,Abaneshwar, Transparent microporous materials for CMP.
  268. Feng, Chung-Chih; Chao, Chen-Hsiang; Yao, I-Peng, Ultra fine fiber polishing pad.
  269. Marquardt, Dave; Joh, Sooyun; Cohen, David; McInerney, Edward J., Uniform fluid distribution and exhaust system for a chemical-mechanical planarization device.
  270. Cangshan Xu ; Brian S. Lombardo, Unsupported chemical mechanical polishing belt.
  271. Bajaj Rajeev ; Litvak Herbert E. ; Surana Rahul K. ; Jew Stephen C. ; Pecen Jiri, Wafer polishing device with movable window.
  272. Bajaj Rajeev ; Litvak Herbert E. ; Surana Rahul K. ; Jew Stephen C. ; Pecen Jiri, Wafer polishing device with movable window.
  273. Hardy L. Charles ; Trice Jennifer L., Working liquids and methods for modifying structured wafers suited for semiconductor fabrication.
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