$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Chemical-mechanical polishing tool with end point measurement station 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B24B-001/00
  • B24B-037/00
출원번호 US-0311807 (1994-09-26)
발명자 / 주소
  • Burke Peter A. (Austin TX) Freeman Eric H. (Underhill Center VT) Ross Gilbert H. (Burlington VT)
출원인 / 주소
  • International Business Machines Corp. (Armonk NY 02)
인용정보 피인용 횟수 : 69  인용 특허 : 0

초록 ▼

This is a wafer polishing and planarizing tool in which there is incorporated a separate measuring station and means for moving the wafer and immersing the wafer into the measuring station without removing it from the polishing head. The wafer being treated is quickly, reliably and periodically chec

대표청구항 ▼

A process for polishing the surface of a wafer having a dielectric layer on a surface thereof comprising: holding the wafer in a rotatable pickup head; rotating the wafer in said head and holding said wafer against a slurry pad disposed on a polishing platen; lifting said the wafer in said head from

이 특허를 인용한 특허 (69)

  1. Boggs Karl E. ; Davis Kenneth M. ; Landers William F. ; Merkling ; Jr. Robert M. ; Passow Michael L. ; Stephens Jeremy K., Apparatus and method for controlling polishing of integrated circuit substrates.
    상세보기
  2. Daniel David W. ; Gregory John W. ; Allman Derryl D. J., Apparatus and method of detecting a polishing endpoint layer of a semiconductor wafer which includes a metallic reporting substance.
    상세보기
  3. Satou Yuuichi,JPX, Apparatus for accurately measuring local thickness of insulating layer on semiconductor wafer during polishing and polishing system using the same.
    상세보기
  4. Taravade Kunal N., Apparatus for detecting an endpoint polishing layer of a semiconductor wafer having a wafer carrier with independent concentric sub-carriers and associated method.
    상세보기
  5. Emesh,Ismail; Chadda,Saket, Apparatus for electrochemically depositing a material onto a workpiece surface.
    상세보기
  6. Dvir Eran,ILX ; Haimovich Eli,ILX ; Shulman Benjamin,ILX, Apparatus for optical inspection of wafers during polishing.
    상세보기
  7. Eran Dvir IL; Moshe Finarov IL; Eli Haimovich ; Benjamin Shulman IL; Rony Abaron IL, Apparatus for optical inspection of wafers during polishing.
    상세보기
  8. Eran Dvir IL; Moshe Finarov IL; Eli Haimovich IL; Beniamin Shulman IL, Apparatus for optical inspection of wafers during polishing.
    상세보기
  9. Finarov Moshe,ILX, Apparatus for optical inspection of wafers during polishing.
    상세보기
  10. Finarov, Moshe, Apparatus for optical inspection of wafers during polishing.
    상세보기
  11. Finarov,Moshe, Apparatus for optical inspection of wafers during processing.
    상세보기
  12. Berman Michael J., Automated inspection system for residual metal after chemical-mechanical polishing.
    상세보기
  13. Easter William Graham ; Misra Sudhanshu ; Roy Pradip Kumar ; Vitkavage Susan Clay, Chemical mechanical polishing endpoint detection by monitoring component activity in effluent slurry.
    상세보기
  14. Richard J. Lebel ; Rock Nadeau ; Martin P. O'Boyle ; Paul H. Smith, Jr. ; Theodore G. van Kessel ; Hemantha K. Wickramasinghe, Chemical mechanical polishing in-situ end point system.
    상세보기
  15. Chen Lai-Juh,TWX, Chemical-mechanical polish (CMP) pad conditioner.
    상세보기
  16. Zin-Chein Wei TW, Chemical-mechanical polishing method and apparatus.
    상세보기
  17. Lebel Richard J. ; Maurer Frederic ; Nadeau Rock ; Smith ; Jr. Paul H. ; Wickramasinghe Hemantha K. ; van Kessel Theodore G., Chemical-mechanical polishing system and method for integrated spin dry-film thickness measurement.
    상세보기
  18. Tsai Chia S. (Hsin-chu TWX) Tseng Pin-Nan (Hsin-chu TWX), Chemical/mechanical planarization (CMP) apparatus and polish method.
    상세보기
  19. Berman, Michael J., Determination of film thickness during chemical mechanical polishing.
    상세보기
  20. Uzoh Cyprian E., Electroplating workpiece fixture having liquid gap spacer.
    상세보기
  21. Uzoh Cyprian Emeka, Electroplating workpiece fixture having liquid gap spacer.
    상세보기
  22. Li Leping ; Barbee Steven George ; Lee Eric James ; Martin Francisco A. ; Wei Cong, Endpoint detection in chemical-mechanical polishing of cloisonne structures.
    상세보기
  23. Gail D. Shelton ; Gayle W. Miller, Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint.
    상세보기
  24. Shelton Gail D. ; Miller Gayle W., Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint.
    상세보기
  25. Chisholm Brynne K. ; Miller Gayle W. ; Shelton Gail D., Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material.
    상세보기
  26. Chisholm Brynne K. ; Miller Gayle W. ; Shelton Gail D., Endpoint detection method and apparatus which utilize an endpoint polishing layer of catalyst material.
    상세보기
  27. Fujiwara Nariaki,JPX, Grinding process monitoring system and grinding process monitoring method.
    상세보기
  28. Osugi Richard S. ; Nagahara Ronald J. ; Lee Dawn M., In-situ chemical-mechanical polishing slurry formulation for compensation of polish pad degradation.
    상세보기
  29. Seliskar John J. ; Allman Derryl D. J. ; Gregory John W. ; Yakura James P. ; Kwong Dim Lee, Integrated circuit device having a capacitor with the dielectric peripheral region being greater than the dielectric central region.
    상세보기
  30. Hasan,Talat Fatima, Measurement system cluster.
    상세보기
  31. Hasan,Talat Fatima, Measurement system cluster.
    상세보기
  32. Hasan,Talat Fatima, Measurement system cluster.
    상세보기
  33. Hiroshi Mizuno JP; Osamu Kinoshita JP; Tetsuaki Murohashi JP; Akihisa Ueno JP; Yoshifumi Sakuma JP; Kostas Amberiadis, Method and apparatus for chemical-mechanical polishing.
    상세보기
  34. Berman Michael J. ; Holland Karey L., Method and apparatus for concurrent pad conditioning and wafer buff in chemical mechanical polishing.
    상세보기
  35. Allman Derryl D. J. ; Daniel David W. ; Gregory John W., Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system.
    상세보기
  36. Derryl D. J. Allman ; David W. Daniel ; John W. Gregory, Method and apparatus for detecting a planarized outer layer of a semiconductor wafer with a confocal optical system.
    상세보기
  37. Allman Derryl D. J. ; Daniel David W. ; Chisholm Michael F., Method and apparatus for detecting a polishing endpoint based upon heat conducted through a semiconductor wafer.
    상세보기
  38. Allman Derryl D. J. ; Daniel David W. ; Gregory John W., Method and apparatus for detecting a polishing endpoint based upon infrared signals.
    상세보기
  39. Taravade Kunal N., Method and apparatus for detecting an endpoint polishing layer by transmitting infrared light signals through a semiconductor wafer.
    상세보기
  40. Miller Gayle W. ; Chisholm Michael F., Method and apparatus for detecting an ion-implanted polishing endpoint layer within a semiconductor wafer.
    상세보기
  41. Pan Yang (Pine Grove SGX) Zheng Jiazhen (Whye Lane SGX), Method and apparatus for determination of the end point in chemical mechanical polishing.
    상세보기
  42. Emesh, Ismail; Chadda, Saket; Korovin, Nikolay; Mueller, Brian, Method and apparatus for electrochemically depositing a material onto a workpiece surface.
    상세보기
  43. Lustig Naftali Eliahu ; Guthrie William L. ; Sandwick Thomas E., Method and apparatus for in-line oxide thickness determination in chemical-mechanical polishing.
    상세보기
  44. Nagahara Ronald J. ; Lee Dawn M., Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing.
    상세보기
  45. Nagahara, Ronald J.; Lee, Dawn M., Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing.
    상세보기
  46. Hsia Shouli Steve ; Wang Yanhua ; Pallinti Jayanthi, Method for shallow trench isolations with chemical-mechanical polishing.
    상세보기
  47. Miller Gayle W. ; Shelton Gail D. ; Chisholm Brynne K., Method of detecting a polishing endpoint layer of a semiconductor wafer which includes a non-reactive reporting specie.
    상세보기
  48. Iizumi, Takeshi; Watanabe, Katsuhide; Kobayashi, Yoichi, Method of polishing a substrate having a film on a surface of the substrate for semiconductor manufacturing.
    상세보기
  49. Wirth, Jr., John; Sanger, Jay L.; Brutsman, Paul, No-mar workpiece support.
    상세보기
  50. Wirth, Jr., John; Sanger, Jay L.; Brutsman, Paul, No-mar workpiece support.
    상세보기
  51. Wirth, Jr., John; Sanger, Jay L.; Brutsman, Paul; McCool, Mark K., No-mar workpiece support.
    상세보기
  52. Wirth, Jr., John; Sanger, Jay L.; Brutsman, Paul; McCool, Mark K., No-mar workpiece support.
    상세보기
  53. Wang Shih-Ming,TWX, Optical dielectric thickness monitor for chemical-mechanical polishing process monitoring.
    상세보기
  54. Torii Kouzi,JPX, Polishing apparatus having a material for adjusting a surface of a polishing pad and method for adjusting the surface of the polishing pad.
    상세보기
  55. Nyui Masaru,JPX ; Ban Mikichi,JPX ; Takahashi Kazuo,JPX, Polishing method and polishing apparatus using the same.
    상세보기
  56. Fujita Takashi,JPX ; Goto Masafumi,JPX ; Nomoto Kunio,JPX, Polishing system.
    상세보기
  57. Fujita Takashi,JPX ; Goto Masafumi,JPX ; Nomoto Kunio,JPX, Polishing system.
    상세보기
  58. Torii Koji,JPX, Semiconductor wafer polishing device and polishing method thereof.
    상세보기
  59. Shouli Steve Hsia ; Yanhua Wang ; Jayanthi Pallinti, Shallow trench isolation chemical-mechanical polishing process.
    상세보기
  60. Hsieh Shih-Huang,TWX ; Chen Li-Dum,TWX, Slurry supply system for chemical mechanical polishing.
    상세보기
  61. Allman, Derryl D. J.; Gregory, John W., Substrate planarization with a chemical mechanical polishing stop layer.
    상세보기
  62. Lebel, Richard J.; Maurer, Frederic; Nadeau, Rock; Smith, Jr., Paul H.; Wickramasinghe, Hemantha K.; van Kessel, Theodore G., Support and alignment device for enabling chemical mechanical polishing rinse and film measurements.
    상세보기
  63. Andreas Michael T. ; Walker Michael A., Surface cleaning apparatus.
    상세보기
  64. Andreas Michael T. ; Walker Michael A., Surface cleaning apparatus and method.
    상세보기
  65. Kononchuk Oleg V. ; Martin Stephen L., System and method for wafer thickness sorting.
    상세보기
  66. Hasan,Talat Fatima, Systems and methods for metrology recipe and model generation.
    상세보기
  67. Murarka Shyam P. (Clifton Park NY) Gutmann Ronald J. (Troy NY) Duquette David J. (Loudonville NY) Steigerwald Joseph M. (Aloha OR), Systems for performing chemical mechanical planarization and process for conducting same.
    상세보기
  68. Uzoh Cyprian Emeka, Wafer edge deplater for chemical mechanical polishing of substrates.
    상세보기
  69. Cesna Joseph V., Wafer polishing with improved end point detection.
    상세보기

관련 콘텐츠

섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로