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Method of fabricating semiconductor device and method of processing substrate 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/84
  • H01L-021/324
출원번호 US-0282598 (1994-07-29)
우선권정보 JP-0209053 (1993-07-31); JP-0209055 (1993-07-31); JP-0256569 (1993-09-20)
발명자 / 주소
  • Adachi Hiroki (Kanagawa JPX) Goto Yuugo (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Takayama Toru (Kanagawa JPX)
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd. (Kanagawa JPX 03)
인용정보 피인용 횟수 : 278  인용 특허 : 0

초록

Method of fabricating a semiconductor device. A glass substrate such as Corning 7059 is used as a substrate. A bottom film is formed. Then, the substrate is annealed above the strain point of the glass substrate. The substrate is then slowly cooled below the strain point. Thereafter, a silicon film

대표청구항

A method of fabricating a semiconductor device, comprising the steps of: forming a bottom film on a glass substrate having a strain point; thermally annealing said glass substrate at a first temperature higher than said strain point of said glass substrate after said bottom film forming step; coolin

이 특허를 인용한 특허 (278)

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  61. Yamazaki, Shunpei; Koyama, Jun; Yamamoto, Kunitaka; Konuma, Toshimitsu, Method for manufacturing an electro-optical device.
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  63. Ikeda, Hisao; Ibe, Takahiro; Koezuka, Junichi; Kato, Kaoru, Method for manufacturing memory device.
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  69. Ohtani Hisashi,JPX, Method for producing a semiconductor device.
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  163. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and its manufacturing method.
  164. Nakamura, Osamu; Kajiwara, Masayuki; Yamazaki, Shunpei; Ohnuma, Hideto, Semiconductor device and manufacturing method of the same.
  165. Nakamura,Osamu; Kajiwara,Masayuki; Yamazaki,Shunpei; Ohnuma,Hideto, Semiconductor device and manufacturing method of the same.
  166. Shunpei Yamazaki JP; Hisashi Ohtani JP; Hideto Ohnuma JP; Satoshi Teramoto JP, Semiconductor device and manufacturing method thereof.
  167. Tanaka, Koichiro; Ohnuma, Hideto, Semiconductor device and manufacturing method thereof.
  168. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Semiconductor device and method for fabricating the same.
  169. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
  170. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
  171. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method for fabricating the same.
  172. Zhang Hongyong,JPX ; Ohnuma Hideto,JPX ; Yamaguchi Naoaki,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for fabricating the same.
  173. Zhang, Hongyong; Ohnuma, Hideto; Yamaguchi, Naoaki; Takemura, Yasuhiko, Semiconductor device and method for fabricating the same.
  174. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX, Semiconductor device and method for forming the same.
  175. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
  176. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
  177. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  178. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  179. Hiroki Adachi JP; Akira Takenouchi JP; Takeshi Fukada JP; Hiroshi Uehara JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
  180. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Takeshi Fukunaga JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
  181. Konuma Toshimitsu,JPX ; Sugawara Akira,JPX ; Uehara Yukiko,JPX ; Zhang Hongyong,JPX ; Suzuki Atsunori,JPX ; Ohnuma Hideto,JPX ; Yamaguchi Naoaki,JPX ; Suzawa Hideomi,JPX ; Uochi Hideki,JPX ; Takemura, Semiconductor device and method for manufacturing the same.
  182. Konuma, Toshimitsu; Sugawara, Akira; Uehara, Yukiko; Zhang, Hongyong; Suzuki, Atsunori; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  183. Konuma, Toshimitsu; Sugawara, Akira; Uehara, Yukiko; Zhang, Hongyong; Suzuki, Atsunori; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  184. Konuma,Toshimitsu; Sugawara,Akira; Uehara,Yukiko; Zhang,Hongyong; Suzuki,Atsunori; Ohnuma,Hideto; Yamaguchi,Naoaki; Suzawa,Hideomi; Uochi,Hideki; Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
  185. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  186. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  187. Miyanaga,Akiharu; Ohtani,Hisashi; Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
  188. Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Yamazaki,Shunpei; Kuwabara,Hideaki, Semiconductor device and method for manufacturing the same.
  189. Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  190. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  191. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  192. Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
  193. Takemura,Yasuhiro, Semiconductor device and method for manufacturing the same.
  194. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Fukunaga Takeshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  195. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  196. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  197. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device and method for producing it.
  198. Ohtani Hisashi,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Yamazaki Shunpei,JPX, Semiconductor device and method for producing the same.
  199. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.
  200. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.
  201. Yamazaki Shunpei,JPX, Semiconductor device and method of fabricating same.
  202. Yamazaki, Shunpei; Fukunaga, Takeshi, Semiconductor device and method of fabricating same.
  203. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method of fabricating same.
  204. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.
  205. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.
  206. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.
  207. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method of fabricating same.
  208. Shunpei Yamazaki JP; Yasuhiko Takemura JP; Hongyong Zhang JP, Semiconductor device and method of fabricating the same.
  209. Takemura, Yasuhiko, Semiconductor device and method of fabricating the same.
  210. Takemura,Yasuhiko, Semiconductor device and method of fabricating the same.
  211. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX, Semiconductor device and method of fabricating the same.
  212. Hamada, Takashi; Murakami, Satoshi; Yamazaki, Shunpei; Nakamura, Osamu; Kajiwara, Masayuki; Koezuka, Junichi; Takayama, Toru, Semiconductor device and method of manufacturing the same.
  213. Hamada,Takashi; Murakami,Satoshi; Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Takayama,Toru, Semiconductor device and method of manufacturing the same.
  214. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method of manufacturing the same.
  215. Ohtani, Hisashi; Takano, Tamae; Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
  216. Ohtani, Hisashi; Takano, Tamae; Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
  217. Ohtani,Hisashi; Takano,Tamae; Yamazaki,Shunpei, Semiconductor device and method of manufacturing the same.
  218. Shunpei Yamazaki JP, Semiconductor device and method of manufacturing the same.
  219. Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
  220. Zhang Hongyong,JPX, Semiconductor device and method of manufacturing the same.
  221. Zhang Hongyong,JPX, Semiconductor device and method of manufacturing the same.
  222. Zhang, Hongyong, Semiconductor device and method of manufacturing the same.
  223. Zhang,Hongyong, Semiconductor device and method of manufacturing the same.
  224. Shunpei Yamazaki JP; Naoaki Yamaguchi JP; Setsuo Nakajima JP, Semiconductor device comprising a bottom gate type thin film transistor.
  225. Ohtani, Hisashi; Adachi, Hiroki; Miyanaga, Akiharu; Takayama, Toru, Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film.
  226. Hongyong Zhang JP; Toru Takayama JP; Yasuhiko Takemura JP; Akiharu Miyanaga JP; Hisashi Ohtani JP, Semiconductor device forming method.
  227. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Semiconductor device forming method.
  228. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi, Semiconductor device forming method.
  229. Yamazaki,Shunpei, Semiconductor device having El layer and sealing material.
  230. Yamazaki,Shunpei; Takemura,Yasuhiko, Semiconductor device having N-channel thin film transistor with LDD regions and P-channel thin film transistor with LDD region.
  231. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor device having a catalyst enhanced crystallized layer.
  232. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device having a crystalline semiconductor film.
  233. Shunpei Yamazaki JP; Yasuhiko Takemura JP, Semiconductor device having a gate oxide film.
  234. Yamazaki,Shunpei; Takemura,Yasuhiko, Semiconductor device having a gate oxide film with some NTFTS with LDD regions and no PTFTS with LDD regions.
  235. Zhang, Hongyong; Takayama, Toru, Semiconductor device having channel formation region comprising silicon and containing a group IV element.
  236. Konuma, Toshimitsu; Sugawara, Akira; Uehara, Yukiko; Zhang, Hongyong; Suzuki, Atsunori; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki; Takemura, Yasuhiko, Semiconductor device having pixel electrode and peripheral circuit.
  237. Yamazaki, Shunpei, Semiconductor device including semiconductor circuit made from semiconductor element and manufacturing method thereof.
  238. Konuma, Toshimitsu; Sugawara, Akira; Uehara, Yukiko; Zhang, Hongyong; Suzuki, Atsunori; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki; Takemura, Yasuhiko, Semiconductor device including transistors with silicided impurity regions.
  239. Konuma, Toshimitsu; Sugawara, Akira; Uehara, Yukiko; Zhang, Hongyong; Suzuki, Atsunori; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki; Takemura, Yasuhiko, Semiconductor device including transistors with silicided impurity regions.
  240. Ohtani, Hisashi; Takano, Tamae; Kokubo, Chiho, Semiconductor device method of manufacturing.
  241. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi, Semiconductor device structure.
  242. Yamazaki, Shunpei, Semiconductor device with heat-resistant gate.
  243. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Miyanaga, Akiharu, Semiconductor film having a single-crystal like region with no grain boundary.
  244. Kimura,Mutsumi, Semiconductor film transistor.
  245. Koyama, Jun; Kawasaki, Yuji, Semiconductor integrated circuit.
  246. Koyama,Jun; Kawasaki,Yuji, Semiconductor integrated circuit.
  247. Koyama,Jun; Kawasaki,Yuji, Semiconductor integrated circuit.
  248. Jun Koyama JP; Yuji Kawasaki JP, Semiconductor integrated system.
  249. Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
  250. Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
  251. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
  252. Ohtani Hisashi,JPX ; Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Miyanaga Akiharu,JPX, Semiconductor thin film and semiconductor device.
  253. Shunpei Yamazaki JP; Hisashi Ohtani JP; Toru Mitsuki JP; Akiharu Miyanaga JP; Yasushi Ogata JP, Semiconductor thin film and semiconductor device.
  254. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Mitsuki Toru,JPX ; Miyanaga Akiharu,JPX ; Ogata Yasushi,JPX, Semiconductor thin film and semiconductor device.
  255. Yamazaki, Shunpei; Ohtani, Hisashi; Mitsuki, Toru; Miyanaga, Akiharu; Ogata, Yasushi, Semiconductor thin film and semiconductor device.
  256. Yamazaki, Shunpei; Ohtani, Hisashi; Mitsuki, Toru; Miyanaga, Akiharu; Ogata, Yasushi, Semiconductor thin film and semiconductor device.
  257. Yamazaki, Shunpei; Ohtani, Hisashi; Mitsuki, Toru; Miyanaga, Akiharu; Ogata, Yasushi, Semiconductor thin film and semiconductor device.
  258. Yamazaki,Shunpei; Ohtani,Hisashi; Mitsuki,Toru; Miyanaga,Akiharu; Ogata,Yasushi, Semiconductor thin film and semiconductor device.
  259. Hisashi Ohtani JP; Akiharu Miyanaga JP; Takeshi Fukunaga JP; Hongyong Zhang JP, Semiconductor thin film transistor with crystal orientation.
  260. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Miyanaga Akiharu,JPX ; Fukunaga Takeshi,JPX, Semiconductor thin film, semiconductor device and manufacturing method thereof.
  261. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film, semiconductor device and manufacturing method thereof.
  262. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film, semiconductor device and manufacturing method thereof.
  263. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor, semiconductor device, and method for fabricating the same.
  264. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor, semiconductor device, and method for fabricating the same.
  265. Yamazaki,Shunpei; Takemura,Yasuhiko; Zhang,Hongyong; Takayama,Toru; Uochi,Hideki, Semiconductor, semiconductor device, and method for fabricating the same.
  266. Yamazaki,Shunpei; Miyanaga,Akiharu; Koyama,Jun; Fukunaga,Takeshi, Static random access memory using thin film transistors.
  267. Yamazaki, Shunpei; Miyanaga, Akiharu; Koyama, Jun; Fukunaga, Takeshi, Thin film semiconductor device and its manufacturing method.
  268. Kim,Hoon, Thin film transistor and method for fabricating the same with step formed at certain layer.
  269. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Thin film transistor having grain boundaries with segregated oxygen and halogen elements.
  270. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.
  271. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.
  272. Yamazaki, Shunpei; Teramoto, Satoshi, Thin film type monolithic semiconductor device.
  273. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Thin-film transistor and fabrication method for same.
  274. Ohnuma Hideto,JPX ; Yamazaki Shunpei,JPX, Thin-film transistor and semiconductor device using thin-film transistors.
  275. Ohnuma, Hideto; Yamazaki, Shunpei, Thin-film transistor and semiconductor device using thin-film transistors.
  276. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Transistor and semiconductor device having columnar crystals.
  277. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko; Miyanaga, Akiharu; Ohtani, Hisashi, Transistor and semiconductor device having columnar crystals.
  278. Nanba Norihiro,JPX, Zoom lens and optical apparatus having the same.
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