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특허 상세정보

Power MOSFET with overcurrent and over-temperature protection

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H02H-003/08   
미국특허분류(USC) 361/103 ; 327/405 ; 327/429 ; 361/18
출원번호 US-0121288 (1993-09-14)
발명자 / 주소
출원인 / 주소
인용정보 피인용 횟수 : 30  인용 특허 : 0
초록

A power integrated circuit is pin-compatible with a three-terminal power MOSFET and contains integrated circuits to turn off the device in the event of an overcurrent or an over-temperature condition. Control power voltage Vcc is applied through a first MOSFET connected between the gate pin and the gate electrode of the power device. A second control MOSFET is connected across the power device gate and source electrodes. The first control MOSFET is turned off and the second control MOSFET is turned on in response to a fault condition. The turn off of the...

대표
청구항

A MOSgated semiconductor power device having a fault condition responsive control circuit integrated into the same die which contains a power section for said device; said device comprising a semiconductor die having first and second main electrodes and a gate electrode for controlling the conduction of current between said first and second main electrodes; said device having at least first, second and third connection pins; said first and second pins connected to said first and second main electrodes respectively; said fault condition responsive control...

이 특허를 인용한 특허 피인용횟수: 30

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