$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Active matrix liquid crystal display cell with light blocking capacitor electrode above insulating layer 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G02F-001/136
  • G02F-001/1345
  • G02F-001/1343
출원번호 US-0141880 (1993-10-27)
우선권정보 JP-0288039 (1992-10-27)
발명자 / 주소
  • Mikoshiba Hiroaki (Tokyo JPX)
출원인 / 주소
  • NEC Corporation (Tokyo JPX 03)
인용정보 피인용 횟수 : 191  인용 특허 : 0

초록

In an active matrix liquid crystal display cell having a switching active element, first and second transparent electrodes between which liquid crystal is filled, and a shading layer for protecting the switching active element and enhancing a contrast of light, an insulating layer is interposed betw

대표청구항

An active matrix liquid crystal display cell, comprising: a principal transparent glass substrate having a principal surface; an opposite transparent glass substrate having an opposite surface opposite to said principal surface with a space therebetween; an active switching element formed on said pr

이 특허를 인용한 특허 (191)

  1. Kim Jeong Hyun,KRX ; Hong Chan Hee,KRX, Active matrix LCD having a non-conductive light shield layer.
  2. Suzawa, Hideomi, Active matrix circuit having a TFT with pixel electrode as auxiliary capacitor.
  3. Zhang Hongyong,JPX, Active matrix device utilizing light shielding means for thin film transistors.
  4. Kokubo, Chiho; Yamagata, Hirokazu; Yamazaki, Shunpei, Active matrix display device having a column-like spacer.
  5. Yamazaki, Shunpei, Active matrix electro-luminescent display device with an organic leveling layer.
  6. Yamazaki, Shunpei, Active matrix electro-luminescent display with an organic leveling layer.
  7. Yamazaki,Shunpei, Active matrix electro-luminescent display with an organic leveling layer.
  8. Ohtani, Hisashi; Ogata, Yasushi; Hirakata, Yoshiharu, Active matrix liquid crystal display device.
  9. Ohtani, Hisashi; Ogata, Yasushi; Hirakata, Yoshiharu, Active matrix liquid crystal display device.
  10. Ohtani, Hisashi; Ogata, Yasushi; Hirakata, Yoshiharu, Active matrix liquid crystal display device.
  11. Yamazaki, Shunpei; Koyama, Jun; Murakami, Satoshi; Tanaka, Yukio, Active matrix liquid crystal display device.
  12. Hisashi Ohtani JP; Yasushi Ogata JP, Active matrix liquid crystal display device having light-interruptive film over insulating film and opening of the upper insulating film.
  13. Ohtani, Hisashi; Ogata, Yasushi, Active matrix liquid crystal display device with overlapping conductive film and pixel electrode.
  14. Ohtani,Hisashi; Ogata,Yasushi; Hirakata,Yoshiharu, Active matrix liquid crystal with capacitor below disclination region.
  15. Tanaka Shinya,JPX ; Ban Atsushi,JPX ; Shimada Takayuki,JPX ; Katayama Mikio,JPX, Active matrix substrate and display device incorporating the same.
  16. Yamazaki, Shunpei; Koyama, Jun; Murakami, Satoshi; Tanaka, Yukio, Active matrix type display device.
  17. Zhang, Hongyong, Active matrix type liquid crystal display device.
  18. Takusei Sato JP; Fumiaki Abe JP; Makoto Hashimoto JP, Apparatus and method for a liquid crystal display device having an electrically-conductive light-shading layer formed on a smoothed layer.
  19. Murakami, Satoshi; Hirakata, Yoshiharu; Fujimoto, Etsuko; Yamazaki, Yu; Yamazaki, Shunpei, Capacitor, semiconductor device and manufacturing method thereof.
  20. Murakami, Satoshi; Hirakata, Yoshiharu; Fujimoto, Etsuko; Yamazaki, Yu; Yamazaki, Shunpei, Capacitor, semiconductor device and manufacturing method thereof.
  21. Murakami,Satoshi; Hirakata,Yoshiharu; Fujimoto,Etsuko; Yamazaki,Yu; Yamazaki,Shunpei, Capacitor, semiconductor device and manufacturing method thereof.
  22. Yamazaki, Shunpei, Device including resin film.
  23. Yamazaki, Shunpei, Display device.
  24. Yamazaki, Shunpei; Takayama, Toru; Murakami, Satoshi; Kimura, Hajime, Display device.
  25. Zhang Hongyong,JPX, Display device.
  26. Zhang Hongyong,JPX ; Teramoto Satoshi,JPX, Display device.
  27. Zhang Hongyong,JPX ; Yamaguchi Naoaki,JPX ; Takemura Yasuhiko,JPX, Display device.
  28. Zhang Hongyong,JPX ; Yamaguchi Naoaki,JPX ; Takemura Yasuhiko,JPX, Display device.
  29. Zhang, Hongyong, Display device.
  30. Zhang, Hongyong; Teramoto, Satoshi, Display device.
  31. Zhang, Hongyong; Teramoto, Satoshi, Display device.
  32. Zhang, Hongyong; Teramoto, Satoshi, Display device.
  33. Zhang, Hongyong; Teramoto, Satoshi, Display device.
  34. Zhang,Hongyong, Display device.
  35. Zhang,Hongyong, Display device.
  36. Hayakawa, Masahiko; Murakami, Satoshi; Yamazaki, Shunpei; Akimoto, Kengo, Display device and method of fabricating the same.
  37. Yamazaki, Shunpei; Arai, Yasuyuki; Kimura, Hajime, Display device and method of manufacturing the same.
  38. Suzawa,Hideomi, Display device having a pixel electrode through a second interlayer contact hole in a wider first contact hole formed over an active region of display switch.
  39. Yamazaki,Shunpei, Display device having underlying insulating film and insulating films.
  40. Yamazaki, Shunpei; Kuwabara, Hideaki, Display device including a color filter or color filters over a pixel portion and a driving circuit for driving the pixel portion.
  41. Hongyong Zhang JP; Satoshi Teramoto JP, Display device including a transparent electrode pattern covering and extending along gate & source lines.
  42. Yamazaki, Shunpei; Takayama, Toru; Murakami, Satoshi; Kimura, Hajime, Display device including an opening formed in a gate insulating film, a passivation film, and a barrier film.
  43. Yamazaki, Shunpei; Takayama, Toru; Murakami, Satoshi; Kimura, Hajime, Display device with capacitor elements.
  44. Yamazaki,Shunpei; Murakami,Satoshi; Koyama,Jun; Tanaka,Yukio; Kitakado,Hidehito; Ohnumo,Hideto, Display including casing and display unit.
  45. Hongyong Zhang JP, Electro-optical device.
  46. Zhang Hongyong,JPX ; Yamaguchi Naoaki,JPX ; Takemura Yasuhiko,JPX, Electro-optical device.
  47. Zhang, Hongyong; Yamaguchi, Naoaki; Takemura, Yasuhiko, Electro-optical device.
  48. Zhang, Hongyong; Yamaguchi, Naoaki; Takemura, Yasuhiko, Electro-optical device.
  49. Zhang,Hongyong; Yamaguchi,Naoaki; Takemura,Yasuhiko, Electro-optical device.
  50. Zhang Hongyong,JPX ; Yamaguchi Naoaki,JPX ; Takemura Yasuhiko,JPX, Electro-optical display.
  51. Yamauchi, Yukio; Fukunaga, Takeshi, Electronic device and electronic apparatus.
  52. Yamauchi, Yukio; Fukunaga, Takeshi, Electronic device and electronic apparatus.
  53. Yamauchi, Yukio; Fukunaga, Takeshi, Electronic device and electronic apparatus.
  54. Yamauchi, Yukio; Fukunaga, Takeshi, Electronic device and electronic apparatus.
  55. Yamauchi, Yukio; Fukunaga, Takeshi, Electronic device and electronic apparatus.
  56. Yamauchi, Yukio; Fukunaga, Takeshi, Electronic device and electronic apparatus.
  57. Yamauchi,Yukio; Fukunaga,Takeshi, Electronic device and electronic apparatus.
  58. Weisfield Richard L. ; Hack Michael G. ; Levine Joel, Fabricating array with storage capacitor between cell electrode and dark matrix.
  59. Shunpei Yamazaki JP; Hideomi Suzawa JP; Kunihiko Fukuchi JP, Fabrication method of a semiconductor device.
  60. Yamazaki,Shunpei; Suzawa,Hideomi; Fukuchi,Kunihiko, Fabrication method of a semiconductor device.
  61. Yamazaki,Shunpei; Suzawa,Hideomi; Fukuchi,Kunihiko, Fabrication method of a semiconductor device.
  62. Stockton John F., High capacitance mirror driver cell.
  63. Michio Arai JP; Yukio Yamauchi JP; Naoya Sakamoto JP; Katsuto Nagano JP, Hybrid integrated circuit component.
  64. Yamazaki, Shunpei; Hirakata, Yoshiharu; Murakami, Satoshi, In-plane switching display device having electrode and pixel electrode in contact with an upper surface of an organic resin film.
  65. Sato, Hideo; Hoshino, Minoru; Mori, Yuji; Komura, Shinichi; Nagae, Yoshiharu; Katsuyama, Ichirou; Nagata, Tetsuya; Arimoto, Akira; Hayasaka, Akio, LCD and projection type display using same.
  66. Zhang Hongyong,JPX, LCD with shield film formed at overlapping portion of bus lines and pixel electrode.
  67. Yamazaki, Shunpei; Fukunaga, Takeshi; Koyama, Jun; Inukai, Kazutaka, Light emitting device and manufacturing method thereof.
  68. Yamazaki, Shunpei; Fukunaga, Takeshi; Koyama, Jun; Inukai, Kazutaka, Light emitting device and manufacturing method thereof.
  69. Yamazaki, Shunpei; Koyama, Jun, Light emitting module and method of driving the same, and optical sensor.
  70. Harada, Norihito; Kurasawa, Hayato; Uehara, Toshinori; Kosuge, Masahiro, Liquid crystal device and method of manufacturing liquid crystal device having surface grooves and alignment film with improved thickness uniformity.
  71. Yamazaki, Shunpei; Nishi, Takeshi, Liquid crystal display and method of driving.
  72. Yamazaki, Shunpei; Nishi, Takeshi, Liquid crystal display and method of driving same.
  73. Yamazaki, Shunpei; Nishi, Takeshi, Liquid crystal display and method of driving same.
  74. Yamazaki, Shunpei; Nishi, Takeshi, Liquid crystal display and method of driving same.
  75. Yamazaki, Shunpei; Nishi, Takeshi, Liquid crystal display and method of driving same.
  76. Shimada Shinji,JPX, Liquid crystal display device having a storage capacitor.
  77. Miyazawa Yoshinaga,JPX, Liquid crystal display device having light shading film.
  78. Miyazawa Yoshinaga,JPX, Liquid crystal display device having light shading film.
  79. Shimada Shinji,JPX, Liquid crystal display device with large aperture ratio.
  80. Park Jae D. (Seoul KRX), Liquid crystal display having redundant pixel electrodes and thin film transistors and a manufacturing method thereof.
  81. Hirakata, Yoshiharu; Nishi, Takeshi; Satake, Rumo, Liquid crystal having common electrode.
  82. Mulatier Laurence,FRX ; Haas Gunther,DEX ; Mourey Bruno,FRX, Liquid crystal screen with enlarged viewing angle.
  83. Arao, Tatsuya, Manufacturing method for field-effect transistor.
  84. Arao, Tatsuya, Manufacturing method for field-effect transistor.
  85. Arao, Tatsuya, Manufacturing method for field-effect transistor.
  86. Arao,Tatsuya, Manufacturing method for field-effect transistor.
  87. Zhang Hongyong,JPX, Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor.
  88. Zhang, Hongyong, Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor.
  89. Zhang, Hongyong, Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor.
  90. Hayakawa, Masahiko; Murakami, Satoshi; Yamazaki, Shunpei; Akimoto, Kengo, Method of fabricating display device.
  91. Yasuhiko Takemura JP; Toshimitsu Konuma JP, Method of forming a semiconductor device having a TFT utilizing optical annealing before a gate electrode is formed.
  92. Yamazaki,Shunpei; Ohtani,Hisashi; Ohnuma,Hideto, Method of manufacturing a semiconductor device.
  93. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Kitakado Hidehito,JPX, Process of fabricating a semiconductor device.
  94. Yamazaki, Shunpei; Koyama, Jun; Kitakado, Hidehito, Process of fabricating a semiconductor device.
  95. Yamazaki,Shunpei; Koyama,Jun; Kitakado,Hidehito, Process of fabricating a semiconductor device.
  96. Shigenobu Maeda JP; Tadashi Nishimura JP; Kazuhito Tsutsumi JP; Shigeto Maegawa JP; Yuuichi Hirano JP, SOI based transistor inside an insulation layer with conductive bump on the insulation layer.
  97. Arao, Tatsuya, Semiconductor device.
  98. Arao, Tatsuya, Semiconductor device.
  99. Arao, Tatsuya, Semiconductor device.
  100. Arao,Tatsuya, Semiconductor device.
  101. Matsushima,Yasuhiro, Semiconductor device.
  102. Matsushima,Yasuhiro, Semiconductor device.
  103. Murakami,Satoshi; Hirakata,Yoshiharu; Fujimoto,Etsuko; Yamazaki,Yu; Yamazaki,Shunpei, Semiconductor device.
  104. Yamazaki Shunpei,JPX, Semiconductor device.
  105. Yamazaki, Shunpei, Semiconductor device.
  106. Yamazaki,Shunpei, Semiconductor device.
  107. Yamazaki,Shunpei, Semiconductor device.
  108. Takemura, Yasuhiko; Teramoto, Satoshi, Semiconductor device and a method for manufacturing the same.
  109. Takemura, Yasuhiko; Teramoto, Satoshi, Semiconductor device and a method for manufacturing the same.
  110. Takemura, Yasuhiko; Teramoto, Satoshi, Semiconductor device and a method for manufacturing the same.
  111. Zhang, Hongyong, Semiconductor device and electronic device.
  112. Zhang,Hongyong, Semiconductor device and electronic device.
  113. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  114. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  115. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  116. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  117. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  118. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  119. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  120. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  121. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  122. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  123. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  124. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  125. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  126. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  127. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  128. Yamazaki,Shunpei; Murakami,Satoshi; Koyama,Jun; Tanaka,Yukio; Kitakado,Hidehito; Ohnumo,Hideto, Semiconductor device and fabrication method thereof.
  129. Yamazaki Shunpei,JPX ; Suzawa Hideomi,JPX ; Teramoto Satoshi,JPX, Semiconductor device and its manufacturing method.
  130. Suzawa, Hideomi; Kusuyama, Yoshihiro, Semiconductor device and manufacturing method thereof.
  131. Suzawa, Hideomi; Kusuyama, Yoshihiro, Semiconductor device and manufacturing method thereof.
  132. Yamazaki, Shunpei; Kuwabara, Hideaki, Semiconductor device and manufacturing method thereof.
  133. Arao, Tatsuya; Tanada, Yoshifumi; Shibata, Hiroshi, Semiconductor device and method for manufacturing the same.
  134. Arao,Tatsuya; Tanada,Yoshifumi; Shibata,Hiroshi, Semiconductor device and method for manufacturing the same.
  135. Arao,Tatsuya; Tanada,Yoshifumi; Shibata,Hiroshi, Semiconductor device and method for manufacturing the same.
  136. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
  137. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
  138. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
  139. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
  140. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
  141. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
  142. Hirakata,Yoshiharu; Goto,Yuugo; Kobayashi,Yuko; Yamazaki,Shunpei, Semiconductor device and method of fabricating the same.
  143. Kokubo, Chiho; Yamagata, Hirokazu; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
  144. Kokubo, Chiho; Yamagata, Hirokazu; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
  145. Murakami, Satoshi; Yamazaki, Shunpei; Koyama, Jun; Osame, Mitsuaki; Tanaka, Yukio; Hirakata, Yoshiharu, Semiconductor device and method of manufacturing the same.
  146. Murakami, Satoshi; Yamazaki, Shunpei; Koyama, Jun; Osame, Mitsuaki; Tanaka, Yukio; Hirakata, Yoshiharu, Semiconductor device and method of manufacturing the same.
  147. Murakami, Satoshi; Yamazaki, Shunpei; Koyama, Jun; Osamè, Mitsuaki; Tanaka, Yukio; Hirakata, Yoshiharu, Semiconductor device and method of manufacturing the same.
  148. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito, Semiconductor device and method of manufacturing therefor.
  149. Kokubo, Chiho; Yamagata, Hirokazu; Yamazaki, Shunpei, Semiconductor device applying to the crystalline semiconductor film.
  150. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device comprising a pixel unit including an auxiliary capacitor.
  151. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito, Semiconductor device comprising a second organic film over a third insulating film wherein the second organic film overlaps with a channel formation region and a second conductive film.
  152. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito, Semiconductor device comprising a second organic film over a third insulating film wherein the second organic film overlaps with a channel formation region and a second conductive film.
  153. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito, Semiconductor device comprising a spacer wherein the spacer has an opening through which a pixel electrode is connected to a first transistor.
  154. Murakami, Satoshi; Yamazaki, Shunpei; Koyama, Jun; Osame, Mitsuaki; Tanaka, Yukio; Hirakata, Yoshiharu, Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same.
  155. Zhang,Hongyong, Semiconductor device having a conductive layer with a light shielding part.
  156. Yamazaki, Shunpei; Suzawa, Hideomi; Teramoto, Satoshi, Semiconductor device having a reliable contact.
  157. Yamazaki, Shunpei; Tanaka, Yukio; Koyama, Jun; Osame, Mitsuaki; Murakami, Satoshi; Ohnuma, Hideto; Fujimoto, Etsuko; Kitakado, Hidehito, Semiconductor device having at least a pixel unit and a driver circuit unit over a same substrate.
  158. Zhang,Hongyong; Teramoto,Satoshi, Semiconductor device having light-shielded thin film transistor.
  159. Yamazaki,Shunpei; Tanaka,Yukio; Koyama,Jun; Osame,Mitsuaki; Murakami,Satoshi; Ohnuma,Hideto; Fujimoto,Etsuko; Kitakado,Hidehito, Semiconductor device having thin film transistor and light-shielding film.
  160. Ohtani,Hisashi; Ogata,Yasushi, Semiconductor device having thin film transistor with particular drain electrode.
  161. Zhang,Hongyong; Teramoto,Satoshi, Semiconductor device including a source line formed on interlayer insulating film having flattened surface.
  162. Suzawa Hideomi,JPX, Semiconductor device including active matrix circuit.
  163. Suzawa,Hideomi, Semiconductor device including active matrix circuit.
  164. Ohtani, Hisashi; Ogata, Yasushi, Semiconductor device including capacitor line parallel to source line.
  165. Yamazaki, Shunpei; Murakami, Satoshi; Hayakawa, Masahiko; Kato, Kiyoshi; Osame, Mitsuaki; Hirosure, Takashi; Fujikawa, Saishi, Semiconductor device including multiple insulating films.
  166. Yamazaki, Shunpei; Murakami, Satoshi; Hayakawa, Masahiko; Kato, Kiyoshi; Osame, Mitsuaki; Hirosure, Takashi; Fujikawa, Saishi, Semiconductor device including multiple insulating films.
  167. Yamazaki, Shunpei; Murakami, Satoshi; Hayakawa, Masahiko; Kato, Kiyoshi; Osame, Mitsuaki, Semiconductor display device.
  168. Yamazaki, Shunpei; Murakami, Satoshi; Hayakawa, Masahiko; Kato, Kiyoshi; Osame, Mitsuaki, Semiconductor display device.
  169. Yamazaki, Shunpei; Murakami, Satoshi; Hayakawa, Masahiko; Kato, Kiyoshi; Osame, Mitsuaki, Semiconductor display device.
  170. Yamazaki, Shunpei; Murakami, Satoshi; Hayakawa, Masahiko; Kato, Kiyoshi; Osame, Mitsuaki, Semiconductor display device.
  171. Yamazaki, Shunpei; Murakami, Satoshi; Hayakawa, Masahiko; Kato, Kiyoshi; Osame, Mitsuaki, Semiconductor display device.
  172. Yamazaki, Shunpei; Murakami, Satoshi; Hayakawa, Masahiko; Kato, Kiyoshi; Osame, Mitsuaki, Semiconductor display device.
  173. Yamazaki, Shunpei; Murakami, Satoshi; Hayakawa, Masahiko; Kato, Kiyoshi; Osame, Mitsuaki; Hirosue, Takashi; Fujikawa, Saishi, Semiconductor display device.
  174. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito, Semiconductor display device and method of manufacturing therefor.
  175. Okita Akira,JPX, Semiconductor display device with a hydrogen supply and hydrogen diffusion barrier layers.
  176. Murakami, Satoshi; Hayakawa, Masahiko; Yamazaki, Shunpei, Semiconductor element and display device using the same.
  177. Murakami, Satoshi; Hayakawa, Masahiko; Yamazaki, Shunpei, Semiconductor element and display device using the same.
  178. Murakami, Satoshi; Hayakawa, Masahiko; Yamazaki, Shunpei, Semiconductor element and display device using the same.
  179. Murakami, Satoshi; Hayakawa, Masahiko; Yamazaki, Shunpei, Semiconductor element and display device using the same.
  180. Murakami, Satoshi; Hayakawa, Masahiko; Yamazaki, Shunpei, Semiconductor element and display device using the same.
  181. Murakami, Satoshi; Hayakawa, Masahiko; Yamazaki, Shunpei, Semiconductor element and display device using the same.
  182. Murakami, Satoshi; Hayakawa, Masahiko; Yamazaki, Shunpei, Semiconductor element and display device using the same.
  183. Murakami, Satoshi; Hayakawa, Masahiko; Yamazaki, Shunpei, Semiconductor element and display device using the same.
  184. Murakami, Satoshi; Hayakawa, Masahiko; Yamazaki, Shunpei, Semiconductor element and display device using the same.
  185. Hongyong Zhang JP; Akira Takenouchi JP; Hideomi Suzawa JP, Semiconductor integrated circuit and method for forming the same.
  186. Hongyong Zhang JP; Akira Takenouchi JP; Hideomi Suzawa JP, Semiconductor integrated circuit and method for forming the same.
  187. Takemura Yasuhiko,JPX ; Konuma Toshimitsu,JPX, Thin film semiconductor integrated circuit.
  188. Takemura, Yasuhiko; Konuma, Toshimitsu, Thin film semiconductor integrated circuit and method for forming the same.
  189. Kyoko Hirai JP; Yushi Jinno JP, Thin film transistor.
  190. Sano, Keiichi; Segawa, Yasuo; Tabuchi, Norio; Yamada, Tsutomu, Thin film transistor having a covered channel and display unit using the same.
  191. Takemura, Yasuhiko; Teramoto, Satoshi, Thin film transistor incorporating an integrated capacitor and pixel region.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로