이 특허를 인용한 특허 (90)

1. Muilenburg, Michael J.; Kim, Chong-Yong J.; Fizel, Jerry J.; Webb, Richard J.; Gagliardi, John J.; Pendergrass, Jr., Daniel B.; Streifel, Robert J.; Bruxvoort, Wesley J., Abrasive article having a window system for polishing wafers, and methods.

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2. Muilenburg, Michael J.; Kim, Chong-Yong J.; Fizel, Jerry J.; Webb, Richard J.; Gagliardi, John J.; Pendergrass, Jr., Daniel B.; Streifel, Robert J.; Bruxvoort, Wesley J., Abrasive article having a window system for polishing wafers, and methods.

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3. Davis, Matthew Fenton; Lian, Lei, Advanced process sensing and control using near infrared spectral reflectometry.

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4. Birang, Manush; Kolte, Gregory L.; Doyle, Terry Lee; Johansson, Nils; Luscher, Paul E.; Poslavsky, Leonid, Apparatus and method for endpoint control and plasma monitoring.

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5. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.

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6. Birang, Manoocher; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.

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7. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.

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8. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.

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9. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations.

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10. Birang, Manoocher; Johansson, Nils; Gleason, Allan, Apparatus and method for in-situ endpoint detection for semiconductor processing operations.

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11. Nagahara Ron J., Apparatus and method for polish removing a precise amount of material from a wafer.

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12. Shanmugasundram, Arulkumar; Birang, Manoocher; Pancham, Ian A.; Lopatin, Sergey, Apparatus and method of detecting the electroless deposition endpoint.

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13. Tang, Wallace T. Y., Apparatus for detection of thin films during chemical/mechanical polishing planarization.

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14. Bartels Anthony L. ; Allen Robert F. ; Holzapfel Paul ; Lin Warren, Apparatus for the in-process detection of workpieces with a monochromatic light source.

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15. Agarwal,Vishnu K., Apparatuses and methods for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies.

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16. Agarwal,Vishnu K., Apparatuses for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies.

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17. Aiyer Arun A. ; Coon Paul Derek ; Chau Henry K., CMP variable angle in situ sensor.

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18. Richard J. Lebel ; Rock Nadeau ; Martin P. O'Boyle ; Paul H. Smith, Jr. ; Theodore G. van Kessel ; Hemantha K. Wickramasinghe, Chemical mechanical polishing in-situ end point system.

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19. Chen Hsi-Chieh (Chu-Tung TWX) Hsu Shun-Liang (Hsin-Chu TWX), Chemical/mechanical planarization (CMP) endpoint method using measurement of polishing pad temperature.

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20. Jens Stolze DE, Detecting a process endpoint from a change in reflectivity.

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21. Ookouchi, Atsushi; Yamamoto, Taro; Takeguchi, Hirofumi; Kyouda, Hideharu; Yoshihara, Kousuke, Developing apparatus and developing method.

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22. Ookouchi, Atsushi; Yamamoto, Taro; Takeguchi, Hirofumi; Kyouda, Hideharu; Yoshihara, Kousuke, Development device and development method.

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23. Onishi, Susumu; Maruta, Masashi, Double-side polishing apparatus.

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24. Shirakashi, Mitsuhiko; Kumekawa, Masayuki; Yasuda, Hozumi; Kobata, Itsuki; Noji, Ikutaro; Yoshida, Kaori, Electrolytic processing apparatus and substrate processing apparatus and method.

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25. Grimbergen Michael N. ; Lill Thorsten B., Endpoint detection for semiconductor processes.

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26. Sui, Zhifeng; Luscher, Paul E; Johansson, Nils; Welch, Michael D, Endpoint detection in substrate fabrication processes.

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27. Michael N. Grimbergen ; Thorsten B. Lill, Endpoint detection in the fabrication of electronic devices.

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28. Wiswesser,Andreas Norbert; Schoenleber,Walter, Endpoint detection with multiple light beams.

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29. Ni, Tuqiang; Lui, Andrew; Huang, Chung-Ho; Jiang, Weinan, Etch endpoint detection.

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30. Winniczek, Jaroslaw W., Full spectrum endpoint detection.

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31. Annapragada Rao V. ; Gabriel Calvin T. ; Weling Milind G., Gas phase planarization process for semiconductor wafers.

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32. David Gerald Coult ; Duane Donald Wendling ; Charles William Lentz ; Bryan Phillip Segner ; Gustav Edward Derkits ; Wan-ning Wu ; Franklin Roy Dietz, In-situ automated contactless thickness measurement for wafer thinning.

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33. Aiyer, Arun A., In-situ pad conditioning apparatus for CMP polisher.

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34. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.

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35. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization.

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36. Tang Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical po.

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37. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.

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38. Tang, Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.

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39. Tang,Wallace T. Y., In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization.

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40. Bibby, Jr., Thomas F. A.; Adams, John A., Learning method and apparatus for predictive determination of endpoint during chemical mechanical planarization using sparse sampling.

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41. Reza Golzarian, Liquid etch endpoint detection and process metrology.

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42. Nanba, Hiromitsu; Yoshida, Masahiro; Murakami, Yuji; Nagayasu, Hiroshi, Liquid processing apparatus and liquid processing method.

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43. Beckage, Peter J.; Edwards, Keith A.; Lukner, Ralf B.; Cho, Wonhui, Method and apparatus for detecting a process endpoint.

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44. Gopalan, Ramesh; Srivatsan, Sridharan; Ramanujam, Katgenhalli Y.; Ni, Tom; Chiang, Conan, Method and apparatus for detecting planarization of metal films prior to clearing.

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45. Gopalan,Ramesh; Srivatsan,Sridharan; Ramanujam,Katgenhalli Y.; Ni,Tom; Chiang,Conan, Method and apparatus for detecting planarization of metal films prior to clearing.

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46. Beckage Peter J. ; Edwards Keith A. ; Lukner Ralf B. ; Cho Wonhui, Method and apparatus for detecting the endpoint of a chemical-mechanical polishing operation.

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47. Pan Yang (Pine Grove SGX) Zheng Jiazhen (Whye Lane SGX), Method and apparatus for determination of the end point in chemical mechanical polishing.

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48. Nishio Mikio,JPX, Method and apparatus for polishing semiconductor substrate.

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49. Moore, Scott E., Method and apparatus for wireless transfer of chemical-mechanical planarization measurements.

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50. Moore, Scott E., Method and apparatus for wireless transfer of chemical-mechanical planarization measurements.

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51. Moore, Scott E., Method and apparatus for wireless transfer of chemical-mechanical planarization measurements.

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52. Moore, Scott E., Method and apparatus for wireless transfer of chemical-mechanical planarization measurements.

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53. Moore, Scott E., Method and apparatus for wireless transfer of chemical-mechanical planarization measurements.

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54. Chen, Hsueh-Chung; Chen, Chien-Hung; Wu, Juan-Yuan, Method for monitoring a semiconductor wafer in a chemical mechanical polishing process.

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55. Jeremy Lansford, Method of endpointing plasma strip process by measuring wafer temperature.

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56. Kubota,Takeo; Shigeta,Atsushi, Method of judging residual film by optical measurement.

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57. Mundt, Randall S., Methods and apparatuses for trench depth detection and control.

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58. Elledge, Jason B., Methods and systems for planarizing workpieces, e.g., microelectronic workpieces.

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59. Elledge,Jason B., Methods and systems for planarizing workpieces, e.g., microelectronic workpieces.

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60. Elledge,Jason B., Methods and systems for planarizing workpieces, e.g., microelectronic workpieces.

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61. Ni,Tuqiang; Collison,Wenli, Methods for detecting the endpoint of a photoresist stripping process.

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62. Allen Robert F. ; Holzapfel Paul ; Bartels Anthony L. ; Lin Warren, Methods for the in-process detection of workpieces in a CMP environment.

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63. Bartels Anthony L. ; Allen Robert F. ; Holzapfel Paul ; Lin Warren, Methods for the in-process detection of workpieces with a monochromatic light source.

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64. Duboust, Alain; Chang, Shou-Sung; Lu, Wei; Neo, Siew; Wang, Yan; Manens, Antoine P.; Moon, Yongsik, Multi-layer polishing pad for low-pressure polishing.

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65. Tolles, Robert D., Multilayer polishing pad and method of making.

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66. Schietinger, Charles W.; Hoang, Ahn N., Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers.

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67. Schietinger, Charles W.; Hoang, Anh N.; Bakin, Dmitry V., Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers.

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68. Schietinger, Charles W.; Hoang, Anh N.; Bakin, Dmitry V., Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers.

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69. Schietinger,Charles W.; Hoang,Anh N.; Bakin,Dmitry V., Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers.

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70. Herbert E. Litvak, Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment.

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71. Herbert E. Litvak, Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment.

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72. Litvak Herbert E., Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment.

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73. Litvak Herbert E., Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment.

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74. Litvak Herbert E., Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment.

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75. Hiyama Hirokuni,JPX ; Wada Yutaka,JPX ; Takahashi Tamami,JPX, Polishing apparatus.

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76. Kodera Masako,JPX ; Yano Hiroyuki ; Shigeta Atsushi,JPX ; Aoki Riichirou,JPX ; Yajima Hiromi,JPX ; Okano Haruo,JPX, Polishing apparatus and method for planarizing layer on a semiconductor wafer.

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77. Kodera Masako,JPX ; Yano Hiroyuki ; Shigeta Atsushi,JPX ; Aoki Riichirou,JPX ; Yajima Hiromi,JPX ; Okano Haruo,JPX, Polishing apparatus and method for planarizing layer on a semiconductor wafer.

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78. Sevilla, Roland K; Hicks, James A.; Jones, Jeremy, Polishing disk with end-point detection port.

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79. Newell, Kelly J., Polishing pad comprising a filled translucent region.

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80. Birang, Manoocher; Gleason, Allan, Polishing pad for in-situ endpoint detection.

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81. Wiswesser,Andreas Norbert, Polishing pad with window.

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82. Wiswesser,Andreas Norbert, Polishing pad with window.

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83. Beardsley Gary Joseph ; Bullard Timothy Scott ; Huynh Cuc Kim ; van Kessel Theodore Gerard ; Walker David Louis, Post CMP clean brush with torque monitor.

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84. Gary Joseph Beardsley ; Timothy Scott Bullard ; Cuc Kim Huynh ; Theodore Gerard van Kessel ; David Louis Walker, Post CMP cleaning method using a brush cleaner with torque monitor.

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85. Tzeng Huey M., Signal processing for in situ monitoring of the formation or removal of a transparent layer.

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86. Lill, Thorsten B.; Grimbergen, Michael N.; Trevor, Jitske; Jiang, Wei-Nan; Chinn, Jeffrey, Substrate monitoring method and apparatus.

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87. Sato, Katsuhiro; Igarashi, Junichi, Substrate treatment apparatus and substrate treatment method.

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88. Pasadyn, Alexander J.; Hewett, Joyce S. Oey, Use of endpoint system to match individual processing stations within a tool.

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89. Hongo, Akihisa; Morisawa, Shinya, Wafer cleaning apparatus.

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90. Hongo,Akihisa; Morisawa,Shinya, Wafer cleaning apparatus.

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