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Method for chemical planarization (CMP) of a semiconductor wafer to provide a planar surface free of microscratches 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/306
출원번호 US-0430276 (1995-04-28)
발명자 / 주소
  • Doan Trung T. (Boise ID) Grief Malcolm (Boise ID) Schultz Laurence D. (Boise ID)
출원인 / 주소
  • Micron Technology, Inc. (Boise ID 02)
인용정보 피인용 횟수 : 180  인용 특허 : 0

초록 ▼

A method of chemically-mechanically planarizing (CMP) a dielectric layer formed on semiconductor wafer includes planarizing the dielectric layer with a polishing pad formed of a hard low compressibility pad material, and then polishing the dielectric layer with a polishing pad formed of a soft compr

대표청구항

The method as claimed in claim 9 and wherein the dielectric layer is selected from the group of materials consisting of borophosilicate glass and an oxide.

이 특허를 인용한 특허 (180)

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