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Overhead luminaire 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • F21S-003/02
출원번호 US-0064924 (1993-05-24)
발명자 / 주소
  • Bishop Vernon R. (630 Peachdale La. Duncansville PA 16635)
인용정보 피인용 횟수 : 70  인용 특허 : 0

초록 ▼

A fluorescent luminaire, of the suspended overhead type, is constructed with the lamps of the “U”type having both electrical connections at the same end so that the lamp forms a cantilever suspension from a central housing. The ballast means is formed perpendicular to the lamps and placed in the cen

대표청구항 ▼

A supported illumination fixture including: a housing for a ballast means and electric circuit means; a non-metallic diffusion means extending outwardly from said housing; a lamp means extending outwardly from said housing; a metallic support secured to and extending outwardly from said housing and

이 특허를 인용한 특허 (70)

  1. Chen, Chen-An; Gelatos, Avgerinos; Yang, Michael X.; Xi, Ming; Hytros, Mark M., Apparatus and method for plasma assisted deposition.
    상세보기
  2. Chen,Chen An; Gelatos,Avgerinos; Yang,Michael X.; Xi,Ming; Hytros,Mark M., Apparatus and method for plasma assisted deposition.
    상세보기
  3. Ma, Paul; Shah, Kavita; Wu, Dien-Yeh; Ganguli, Seshadri; Marcadal, Christophe; Wu, Frederick C.; Chu, Schubert S., Apparatus and process for plasma-enhanced atomic layer deposition.
    상세보기
  4. Ma, Paul; Shah, Kavita; Wu, Dien-Yeh; Ganguli, Seshadri; Marcadal, Christophe; Wu, Frederick C.; Chu, Schubert S., Apparatus and process for plasma-enhanced atomic layer deposition.
    상세보기
  5. Chung,Hua; Chen,Ling; Yu,Jick; Chang,Mei, Apparatus for integration of barrier layer and seed layer.
    상세보기
  6. Chung, Hua; Wang, Rongjun; Maity, Nirmalya, Atomic layer deposition of barrier materials.
    상세보기
  7. Chung,Hua; Wang,Rongjun; Maity,Nirmalya, Atomic layer deposition of tantalum based barrier materials.
    상세보기
  8. Chen, Ling; Marcadal, Christophe; Yoon, Hyungsuk Alexander, CVD TiSiN barrier for copper integration.
    상세보기
  9. Lu, Jiang; Ha, Hyoung-Chan; Ma, Paul F.; Ganguli, Seshadri; Aubuchon, Joseph F.; Yu, Sang-ho; Narasimhan, Murali K., Cobalt deposition on barrier surfaces.
    상세보기
  10. Lu, Jiang; Ha, Hyoung-Chan; Ma, Paul; Ganguli, Seshadri; Aubuchon, Joseph F.; Yu, Sang Ho; Narasimhan, Murali K., Cobalt deposition on barrier surfaces.
    상세보기
  11. Nguyen, Son T.; Sangam, Kedarnath; Schwartz, Miriam; Choi, Kenric; Bhat, Sanjay; Narwankar, Pravin K.; Kher, Shreyas; Sharangapani, Rahul; Muthukrishnan, Shankar; Deaton, Paul, Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system.
    상세보기
  12. Yang, Michael X.; Xi, Ming, Cyclical deposition of a variable content titanium silicon nitride layer.
    상세보기
  13. Chung, Hua; Chen, Ling; Chin, Barry L., Cyclical deposition of refractory metal silicon nitride.
    상세보기
  14. Chung,Hua; Chen,Ling; Chin,Barry L., Cyclical deposition of refractory metal silicon nitride.
    상세보기
  15. Khandelwal, Amit; Gelatos, Avgerinos V.; Marcadal, Christophe; Chang, Mei, Deposition and densification process for titanium nitride barrier layers.
    상세보기
  16. Khandelwal, Amit; Gelatos, Avgerinos V.; Marcadal, Christophe; Chang, Mei, Deposition and densification process for titanium nitride barrier layers.
    상세보기
  17. Yoon, Ki Hwan; Cha, Yonghwa Chris; Yu, Sang Ho; Ahmad, Hafiz Farooq; Wee, Ho Sun, Deposition methods for barrier and tungsten materials.
    상세보기
  18. Yoon,Ki Hwan; Cha,Yonghwa Chris; Yu,Sang Ho; Ahmad,Hafiz Farooq; Wee,Ho Sun, Deposition methods for barrier and tungsten materials.
    상세보기
  19. Zimmerman, Eric K, Electrode cover assembly.
    상세보기
  20. Chen, Ling; Chung, Hua; Chin, Barry L.; Zhang, Hong, Enhanced copper growth with ultrathin barrier layer for high performance interconnects.
    상세보기
  21. Chen, Ling; Chung, Hua; Chin, Barry L.; Zhang, Hong, Enhanced copper growth with ultrathin barrier layer for high performance interconnects.
    상세보기
  22. Chen,Ling; Chang,Mei, Enhancement of copper line reliability using thin ALD tan film to cap the copper line.
    상세보기
  23. Altman Barry ; Turner John Francis ; Pitts Robert Wayland, Fluorescent lighting fixture having two separate end supports, separate integral ballast subassembly and lamps sockets, and hood positionable above end supports for mounting in or below opening in su.
    상세보기
  24. Byun, Jeong Soo; Mak, Alfred, Formation of boride barrier layers using chemisorption techniques.
    상세보기
  25. Byun,Jeong Soo; Mak,Alfred, Formation of boride barrier layers using chemisorption techniques.
    상세보기
  26. Byun,Jeong Soo; Mak,Alfred, Formation of boride barrier layers using chemisorption techniques.
    상세보기
  27. Byun,Jeong Soo; Mak,Alfred, Formation of boride barrier layers using chemisorption techniques.
    상세보기
  28. Huang,Judy H., In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application.
    상세보기
  29. Huang, Judy H., In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application.
    상세보기
  30. Ma, Paul F.; Aubuchon, Joseph F.; Chang, Mei; Kim, Steven H.; Wu, Dien-Yeh; Nakashima, Norman M.; Johnson, Mark; Palakodeti, Roja, In-situ chamber treatment and deposition process.
    상세보기
  31. Chung,Hua; Maity,Nirmalya; Yu,Jick; Mosely,Roderick Craig; Chang,Mei, Integration of ALD tantalum nitride for copper metallization.
    상세보기
  32. Chung,Hua; Bekiaris,Nikolaos; Marcadal,Christophe; Chen,Ling, Integration of ALD/CVD barriers with porous low k materials.
    상세보기
  33. Chung,Hua; Chen,Ling; Yu,Jick; Chang,Mei, Integration of barrier layer and seed layer.
    상세보기
  34. Yang, Michael X.; Itoh, Toshio; Xi, Ming, Integration of titanium and titanium nitride layers.
    상세보기
  35. Yang,Michael X.; Itoh,Toshio; Xi,Ming, Integration of titanium and titanium nitride layers.
    상세보기
  36. Chou,Hsien Chung, LED light source module in tube.
    상세보기
  37. Grimm Manfred,DEX, Lamp.
    상세보기
  38. Haugaard,Eric J.; Raleigh,Craig; Ruud,Alan J.; Buchanan,Dallas I., Linear fluorescent high-bay.
    상세보기
  39. Haugaard,Eric J.; Raleigh,Craig; Ruud,Alan J.; Buchanan,Dallas I., Linear fluorescent high-bay.
    상세보기
  40. Eric A. Fishman, Louver assembly with translucent louver baffles.
    상세보기
  41. Byun, Jeong Soo, Method and apparatus for depositing tungsten after surface treatment to improve film characteristics.
    상세보기
  42. Byun,Jeong Soo, Method and apparatus for depositing tungsten after surface treatment to improve film characteristics.
    상세보기
  43. Xi, Ming; Sinha, Ashok; Kori, Moris; Mak, Alfred W.; Lu, Xinliang; Lai, Ken Kaung; Littau, Karl A., Method for depositing tungsten-containing layers by vapor deposition techniques.
    상세보기
  44. Xi,Ming; Sinha,Ashok; Kori,Moris; Mak,Alfred W.; Lu,Xinliang; Lai,Ken Kaung; Littau,Karl A., Method for depositing tungsten-containing layers by vapor deposition techniques.
    상세보기
  45. Xi,Ming; Sinha,Ashok; Kori,Moris; Mak,Alfred W.; Lu,Xinliang; Lai,Ken Kaung; Littau,Karl A., Method for depositing tungsten-containing layers by vapor deposition techniques.
    상세보기
  46. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua, Method for forming tungsten materials during vapor deposition processes.
    상세보기
  47. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua; Sinha, Ashok; Xi, Ming, Method for forming tungsten materials during vapor deposition processes.
    상세보기
  48. Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua; Sinha,Ashok; Xi,Ming, Method for forming tungsten materials during vapor deposition processes.
    상세보기
  49. Ma, Paul; Aubuchon, Joseph F.; Lu, Jiang; Chang, Mei, Method for tuning a deposition rate during an atomic layer deposition process.
    상세보기
  50. Lanczy,Geza T.; Williams,Rodney A.; Laukhuf,Gregg E., Method of beam and basket construction for linear lighting.
    상세보기
  51. Chung, Hua; Chen, Ling; Ku, Vincent W., Method of film deposition using activated precursor gases.
    상세보기
  52. Myo, Nyi Oo; Cho, Kenric; Kher, Shreyas; Narwankar, Pravin; Poppe, Steve; Metzner, Craig R.; Deaten, Paul, Methods for atomic layer deposition of hafnium-containing high-K dielectric materials.
    상세보기
  53. Lai, Ken Kaung; Rajagopalan, Ravi; Khandelwal, Amit; Moorthy, Madhu; Gandikota, Srinivas; Castro, Joseph; Gelatos, Avgerinos V.; Knepfler, Cheryl; Jian, Ping; Fang, Hongbin; Huang, Chao-Ming; Xi, Ming; Yang, Michael X.; Chung, Hua; Byun, Jeong Soo, Methods for depositing tungsten layers employing atomic layer deposition techniques.
    상세보기
  54. Wu, Arthur Y.; Doerr, James A.; Garten, Michael D.; Rector, David; Broadbooks, Virginia L.; Kack, Dawn R., Multi-directional lighting fixture.
    상세보기
  55. Yang, Michael Xi; Yoon, Hyungsuk Alexander; Zhang, Hui; Fang, Hongbin; Xi, Ming, Multiple precursor cyclical deposition system.
    상세보기
  56. Mahajani, Maitreyee; Yudovsky, Joseph; McDougall, Brendan, Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool.
    상세보기
  57. Yang, Michael X.; Itoh, Toshio; Xi, Ming, Plasma-enhanced cyclic layer deposition process for barrier layers.
    상세보기
  58. Yang,Michael X.; Itoh,Toshio; Xi,Ming, Plasma-enhanced cyclic layer deposition process for barrier layers.
    상세보기
  59. Ganguli, Seshadri; Yu, Sang-Ho; Phan, See-Eng; Chang, Mei; Khandelwal, Amit; Ha, Hyoung-Chan, Process for forming cobalt and cobalt silicide materials in tungsten contact applications.
    상세보기
  60. Ganguli, Seshadri; Yu, Sang-Ho; Phan, See-Eng; Chang, Mei; Khandelwal, Amit; Ha, Hyoung-Chan, Process for forming cobalt and cobalt silicide materials in tungsten contact applications.
    상세보기
  61. Ganguli, Seshadri; Chu, Schubert S.; Chang, Mei; Yu, Sang-Ho; Moraes, Kevin; Phan, See-Eng, Process for forming cobalt-containing materials.
    상세보기
  62. Gandikota,Srinivas; Moorthy,Madhu; Khandelwal,Amit; Gelatos,Avgerinos V.; Chang,Mei; Shah,Kavita; Ganguli,Seshadri, Ruthenium as an underlayer for tungsten film deposition.
    상세보기
  63. Olsen, Christopher; Narwankar, Pravin K.; Kher, Shreyas S.; Thakur, Randhir; Muthukrishnan, Shankar; Kraus, Philip A., Stabilization of high-k dielectric materials.
    상세보기
  64. Xi, Ming; Yang, Michael; Zhang, Hui, System and method for forming an integrated barrier layer.
    상세보기
  65. Xi,Ming; Yang,Michael; Zhang,Hui, System and method for forming an integrated barrier layer.
    상세보기
  66. Mak, Alfred W.; Chang, Mei; Byun, Jeong Soo; Chung, Hua; Sinha, Ashok; Kori, Moris, System and method to form a composite film stack utilizing sequential deposition techniques.
    상세보기
  67. Chung,Hua, Titanium tantalum nitride silicide layer.
    상세보기
  68. Wang, Shulin; Kroemer, Ulrich; Luo, Lee; Chen, Aihua; Li, Ming, Tungsten nitride atomic layer deposition processes.
    상세보기
  69. Plunk, Carlton; Graff, Eugene, Virtual direct and indirect suspended lighting fixture.
    상세보기
  70. Plunk,Carlton Bruce; Waycaster,William Bradley, Yielding hanger for stem mounting fluorescent highbays.
    상세보기

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