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Chemical mechanical polishing slurry for metal layers 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B24B-001/00
  • H01L-021/00
출원번호 US-0319213 (1994-10-06)
발명자 / 주소
  • Neville Matthew (Champaign IL) Fluck David J. (Pesotum IL) Hung Cheng-Hung (Champaign IL) Lucarelli Michael A. (Mattoon IL) Scherber Debra L. (Orangevale CA)
출원인 / 주소
  • Cabot Corporation (Boston MA 02)
인용정보 피인용 횟수 : 358  인용 특허 : 0

초록

A slurry for use in chemical-mechanical polishing of a metal layer comprising high purity fine metal oxide particles uniformly dispersed in a stable aqueous medium.

대표청구항 ▼

A method for chemical-mechanical polishing a metal layer of a substrate, the method which comprises the steps of: a) providing a chemical mechanical polishing slurry comprising high purity, alumina particles uniformly dispersed in an aqueous medium having a surface area ranging from about 40 m2/g to

이 특허를 인용한 특허 (358)

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  136. Edelstein Daniel C. ; Horkans Wilma J. ; Luce Stephen E. ; Lustig Naftall E. ; Pope Keith R. ; Roper Peter D., Elimination of photo-induced electrochemical dissolution in chemical mechanical polishing.
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  137. Li,Yuzhuo; Tang,Kwok; Li,Wu; Bian,Guomin; Cheemalapati,Krishnayya; Duvvuru,Vivek; Bundi,Deenesh; Bian,Henry, Engineered non-polymeric organic particles for chemical mechanical planarization.
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  138. Streinz Christopher C. ; Mueller Brian L. ; Lucarelli Michael A. ; Walters Max H., Fluoride additive containing chemical mechanical polishing slurry and method for use of same.
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  139. Yasuyuki Suzuki JP; Tomohiro Kaku JP; Isao Saito JP; Kazuya Orii JP; Yasutoshi Fujita JP; Masao Yamaguchi JP; Masahiro Sasaki JP, Free abrasive slurry composition and a grinding method using the same.
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  140. Scott,Brandon Shane; Small,Robert J., Free radical-forming activator attached to solid and used to enhance CMP formulations.
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  141. Siddiqui, Junaid Ahmed; Small, Robert J.; Castillo, Daniel Hernandez, Free radical-forming activator attached to solid and used to enhance CMP formulations.
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  142. Lee, Jui-Kun; Yu, Chris C.; Mikolas, David G., Global planarization method.
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  143. Brusic,Vlasta; Zhou,Renjie; Thompson,Christopher, Gold CMP composition and method.
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  144. Fang, Treliant, Halite salts as silicon carbide etchants for enhancing CMP material removal rate for SiC wafer.
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  145. Joshi Rajiv Vasant ; Tejwani Manu Jamnadas ; Srikrishnan Kris Venkatraman, High aspect ratio low resistivity lines/vias with a tungsten-germanium alloy hard cap.
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  146. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian, Integrated circuit device and structure.
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  147. Brian K. Marshall, Isolation and/or removal of ionic contaminants from planarization fluid compositions using macrocyclic polyethers.
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  148. Brian K. Marshall, Isolation and/or removal of ionic contaminants from planarization fluid compositions using macrocyclic polyethers and methods of using such compositions.
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  149. Siddiqui, Junaid Ahmed; Castillo, II, Daniel Hernandez; Kapoor, Rajat; Keefover, Tara Ranae; Richards, Robin Edward, Low defectivity product slurry for CMP and associated production method.
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  150. Uchida, Takeshi; Hoshino, Tetsuya; Terazaki, Hiroki; Kamigata, Yasuo; Koyama, Naoyuki; Honma, Yoshio; Kondoh, Seiichi, Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same.
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  151. Uchida, Takeshi; Hoshino, Tetsuya; Terazaki, Hiroki; Kamigata, Yasuo; Koyama, Naoyuki; Honma, Yoshio; Kondoh, Seiichi, Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same.
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  152. Uchida,Takeshi; Hoshino,Tetsuya; Terazaki,Hiroki; Kamigata,Yasuo; Koyama,Naoyuki; Honma,Yoshio; Kondoh,Seiichi, Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same.
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  153. Grumbine,Steven K., Meta oxide coated carbon black for CMP.
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  154. Lee, Jae Seok; Lee, Kil Sung, Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching.
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  155. Carter, Phillip W., Metal ion-containing CMP composition and method for using the same.
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  156. Vacassy, Robert, Methanol-containing silica-based CMP compositions.
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  157. Fang,Mingming; Ianiro,Michael R.; Eisenhour,Don, Method chemical-mechanical polishing and planarizing corundum, GaAs, GaP and GaAs/GaP alloy surfaces.
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  158. Beitel, Gerhard; Saenger, Annette; Mainka, Gerd; Schnabel, Rainer Florian, Method for chemical-mechanical polishing of a layer which is a substrate and is a metal selected from a platinum group.
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  159. Farkas Janos ; Freeman Melissa, Method for chemically-mechanically polishing a metal layer.
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  160. Schroeder, David J.; Carter, Phillip; Chamberlain, Jeffrey P.; Miller, Kyle; Cherian, Isaac K., Method for copper CMP using polymeric complexing agents.
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  161. Or-Bach, Zvi; Wurman, Zeev, Method for design and manufacturing of a 3D semiconductor device.
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  162. Or-Bach, Zvi, Method for developing a custom device.
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  163. Lindsey ; Jr. Paul C. ; McClelland Robert J., Method for fabricating an integrated circuit.
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  164. Or-Bach, Zvi; Sekar, Deepak C., Method for fabricating novel semiconductor and optoelectronic devices.
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  165. Cronquist, Brian; Beinglass, Isreal; de Jong, Jan Lodewijk; Sekar, Deepak C.; Or-Bach, Zvi, Method for fabrication of a semiconductor device and structure.
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  166. Or-Bach, Zvi; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk; Sekar, Deepak C., Method for fabrication of a semiconductor device and structure.
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  167. Or-Bach, Zvi; Cronquist, Brian; Beinglass, Isreal; de Jong, Jan Lodewijk; Sekar, Deepak C., Method for fabrication of a semiconductor device and structure.
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  168. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian, Method for fabrication of a semiconductor device and structure.
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  169. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk, Method for fabrication of a semiconductor device and structure.
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  170. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk, Method for fabrication of a semiconductor device and structure.
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  171. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk, Method for fabrication of a semiconductor device and structure.
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  172. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Lim, Paul, Method for fabrication of a semiconductor device and structure.
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  173. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Wurman, Ze'ev, Method for fabrication of a semiconductor device and structure.
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  174. Sekar, Deepak; Or-Bach, Zvi; Cronquist, Brian, Method for fabrication of a semiconductor device and structure.
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  175. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk, Method for fabrication of configurable systems.
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  176. Farkas Janos ; Anthony Brian G. ; Guvenilir Abbas ; Islam Mohammed Rabiul ; Kolagunta Venkat ; Mendonca John ; Tiwari Rajesh ; Venkatesan Suresh, Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process.
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  177. Farkas, Janos; Anthony, Brian G.; Guvenilir, Abbas; Islam, Mohammed Rabiul; Kolagunta, Venkat; Mendonca, John; Tiwari, Rajesh; Venkatesan, Suresh, Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process.
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  178. Janos Farkas ; Brian G. Anthony ; Abbas Guvenilir ; Mohammed Rabiul Islam ; Venkat Kolagunta ; John Mendonca ; Rajesh Tiwari ; Suresh Venkatesan, Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process.
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  179. Gary J. Beardsley ; Zhong X. He ; Cuc K. Huynh ; Michael P. McMahon, Method for homogenizing device parameters through photoresist planarization.
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  180. Sethuraman Anantha R. ; Cook Lee Melbourne ; Wang Huey-Ming ; Wu Guangwei, Method for polishing a composite comprising an insulator, a metal, and titanium.
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  181. Stierman, Roger J.; Moore, Thomas M.; Shinn, Gregory B., Method for reworking metal layers on integrated circuit bond pads.
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  182. Stierman, Roger J.; Moore, Thomas M.; Shinn, Gregory B., Method for reworking metal layers on integrated circuit bond pads.
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  183. Kook Taeho ; Maury Alvaro ; Steiner Kurt G. ; Yang Tungsheng, Method for using a hardmask to form an opening in a semiconductor substrate.
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  184. Farkas Janos ; Freeman Melissa, Method for using ammonium salt slurries for chemical mechanical polishing (CMP).
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  185. Jaso Mark Anthony, Method of chemically mechanically polishing an electronic component using a non-selective ammonium persulfate slurry.
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  186. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian; Beinglass, Israel; Wurman, Ze'ev; Lim, Paul, Method of constructing a semiconductor device and structure.
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  187. Or-Bach, Zvi; Cronquist, Brian; Beinglass, Isreal; de Jong, Jan Lodewijk; Sekar, Deepak C., Method of fabricating a semiconductor device and structure.
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  188. Tsuchiya Yasuaki,JPX, Method of forming a buried plug and an interconnection.
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  189. Tomoko Wake JP; Yasuaki Tsuchiya JP, Method of forming a copper-containing metal interconnect using a chemical mechanical planarization (CMP) slurry.
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  190. Busta, Heinz H.; Steckenrider, J. Scott, Method of forming a current controlling device.
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  191. Or-Bach, Zvi; Sekar, Deepak; Cronquist, Brian; Wurman, Ze'ev, Method of forming three dimensional integrated circuit devices using layer transfer technique.
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  192. Or-Bach, Zvi; Widjaja, Yuniarto, Method of maintaining a memory state.
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  193. Watts David K. ; Nkansah Franklin D. ; Mendonca John, Method of making a semiconductor device using chemical-mechanical polishing having a combination-step process.
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  194. Or-Bach, Zvi; Sekar, Deepak C.; Cronquist, Brian, Method of manufacturing a semiconductor device and structure.
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  195. Sekar, Deepak C.; Or-Bach, Zvi, Method of manufacturing a semiconductor device with two monocrystalline layers.
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  196. Or-Bach, Zvi; Cronquist, Brian; Beinglass, Israel; de Jong, J. L.; Sekar, Deepak C.; Lim, Paul, Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer.
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  197. Burton Randolph H. ; Obeng Yaw S. ; Schultz Laurence D., Method of planarizing a surface on a semiconductor wafer.
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  198. Kaisaki David A. ; Kranz Heather K. ; Wood Thomas E. ; Hardy L. Charles, Method of planarizing the upper surface of a semiconductor wafer.
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  199. Obeng Yaw Samuel, Method of polishing.
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  200. Muroyama Masakazu,JPX, Method of polishing a semiconductor substrate during production of a semiconductor device.
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  201. Carter, Phillip W.; Johns, Timothy P., Method of polishing a silicon-containing dielectric.
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  202. Zhang,Jian; Sun,Fred; Wang,Shumin; Cherian,Isaac K.; Klingenberg,Eric H., Method of polishing a substrate with a polishing system containing conducting polymer.
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  203. Dirksen, James A.; Boldridge, David W.; Grover, Gautam S., Method of polishing or planarizing a substrate.
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  204. Kaufman Vlasta Brusic ; Wang Shumin, Method of polishing using multi-oxidizer slurry.
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  205. Richardson, H. Wayne; Hodge, Robert L., Method of preserving wood by injecting particulate wood preservative slurry.
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  206. Richardson, H. Wayne; Hodge, Robert L., Method of preserving wood by injecting particulate wood preservative slurry.
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  207. Or-Bach, Zvi; Cronquist, Brian; Sekar, Deepak, Method of processing a semiconductor device.
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  208. Or-Bach, Zvi; Wurman, Zeev, Method to construct a 3D semiconductor device.
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  209. Or-Bach, Zvi; Wurman, Ze'ev, Method to construct systems.
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  210. Chen-Hua Yu TW; Weng Chang TW; Jih-Chung Twu TW; Tsu Shih TW, Method to eliminate dishing of copper interconnects by the use of a sacrificial oxide layer.
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  211. Or-Bach, Zvi; Wurman, Ze'ev, Method to form a 3D semiconductor device.
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  212. Or-Bach, Zvi; Sekar, Deepak; Cronquist, Brian, Method to form a 3D semiconductor device and structure.
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  213. Krusell Wilbur C. ; Malik Igor J., Method to remove metals in a scrubber.
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  214. Hardikar, Vishwas V., Methods and compositions for chemical mechanical planarization of ruthenium.
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  215. Chen, Jian; Cruden, Karen Chu; Duan, Xiangfeng; Liu, Chao; Parce, J. Wallace, Methods and devices for forming nanostructure monolayers and devices including such monolayers.
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  216. Chen, Jian; Cruden, Karen Chu; Duan, Xiangfeng; Liu, Chao; Parce, J. Wallace, Methods and devices for forming nanostructure monolayers and devices including such monolayers.
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  217. Chen, Jian; Cruden, Karen Chu; Duan, Xiangfeng; Liu, Chao; Parce, J. Wallace, Methods and devices for forming nanostructure monolayers and devices including such monolayers.
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  218. Chen, Jian; Duan, Xiangfeng; Liu, Chao; Nallabolu, Madhuri; Parce, J. Wallace; Ranganathan, Srikanth, Methods and devices for forming nanostructure monolayers and devices including such monolayers.
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  219. Chen, Jian; Duan, Xiangfeng; Liu, Chao; Nallabolu, Madhuri; Parce, J. Wallace; Ranganathan, Srikanth, Methods and devices for forming nanostructure monolayers and devices including such monolayers.
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  220. Williams, Damon Vincent, Methods for controlling retaining ring and wafer head tilt for chemical mechanical polishing.
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  221. Sinha,Nishant; Klein,Rita J., Methods for planarization of Group VIII metal-containing surfaces using complexing agents.
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  222. Uhlenbrock,Stefan; Westmoreland,Don, Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases.
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  223. Sabde,Gundu M., Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article.
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  224. Sinha, Nishant; Klein, Rita J., Methods for planarization of group VIII metal-containing surfaces using complexing agents.
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  225. Vaartstra, Brian A., Methods for planarization of metal-containing surfaces using halogens and halide salts.
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  226. Vaartstra, Brian A., Methods for planarization of metal-containing surfaces using halogens and halide salts.
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  227. Lee,Jae Seok; Lee,Kil Sung, Methods of forming integrated circuit devices having polished tungsten metal layers therein.
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  228. Leach, Robert M.; Zhang, Jun, Micronized wood preservative formulations.
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  229. Leach, Robert M.; Zhang, Jun, Micronized wood preservative formulations.
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  230. Leach, Robert M.; Zhang, Jun, Micronized wood preservative formulations.
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  231. Leach, Robert M.; Zhang, Jun, Micronized wood preservative formulations.
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  232. Zhang, Jun; Leach, Robert M., Micronized wood preservative formulations.
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  233. Zhang, Jun; Leach, Robert M., Micronized wood preservative formulations.
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  234. Zhang, Jun; Leach, Robert M., Micronized wood preservative formulations in organic carriers.
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  235. Or-Bach, Zvi; Cronquist, Brian; Beinglass, Israel; de Jong, Jan Lodewijk; Sekar, Deepak C., Monolithic three-dimensional semiconductor device and structure.
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  236. Wijekoon, Kapila; Tsai, Stan D.; Wang, Yuchun; Bennett, Doyle E.; Redeker, Fred C.; Chandrachood, Madhavi; Brown, Brian J., Multi-fluid polishing process.
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  237. Kaufman Vlasta Brusic ; Wang Shumin, Multi-oxidizer precursor for chemical mechanical polishing.
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  238. Kaufman Vlasta Brusic ; Wang Shumin, Multi-oxidizer slurry for chemical mechanical polishing.
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  239. Kaufman Vlasta Brusic ; Wang Shumin, Multi-oxidizer slurry for chemical mechanical polishing.
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  240. Bi,Xiangxin; Kambe,Nobuyuki; Horne,Craig R.; Gardner,James T.; Mosso,Ronald J.; Chiruvolu,Shivkumar; Kumar,Sujeet; McGovern,William E.; DeMascarel,Pierre J.; Lynch,Robert B., Nanoparticle-based power coatings and corresponding structures.
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  241. Li,Yuzhuo; Chowdhury,Atanu Roy; Tang,Kwok; Bian,Guomin; Cheemalapati,Krishnayya, Non-polymeric organic particles for chemical mechanical planarization.
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  242. Richardson, H. Wayne; Hodge, Robert L., Particulate wood preservative and method for producing same.
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  243. Richardson, H. Wayne; Hodge, Robert L., Particulate wood preservative and method for producing the same.
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  244. Richardson, H. Wayne; Hodge, Robert L., Particulate wood preservative and method for producing the same.
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  245. Brewer Richard ; Grebinski Thomas J. ; Currie James E. ; Jones Michael ; Mullee William ; Nguyen Ann, Planarization compositions and methods for removing interlayer dielectric films.
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  246. Robinson,Karl M.; Meikle,Scott G., Planarizing solutions, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies.
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  247. Woo Christy Mei-Chu ; Avanzino Steven C. ; Bartlett Steven Douglas, Point of use mixing for LI/plug tungsten polishing slurry to improve existing slurry.
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  248. Saldana,Miguel A.; Williams,Damon Vincent, Polishing apparatus and methods having high processing workload for controlling polishing pressure applied by polishing head.
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  249. Kodama Hitoshi,JPX ; Suzumura Satoshi,JPX ; Yokomichi Noritaka,JPX ; Miura Shirou,JPX ; Otake Hideki,JPX ; Kawamura Atsunori,JPX ; Ito Masatoki,JPX, Polishing composition.
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  250. Ohno, Koji; Horikawa, Chiyo; Sakai, Kenji; Ina, Katsuyoshi, Polishing composition.
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  251. Shemo David M. ; Rader W. Scott ; Owaki Toshiki, Polishing composition.
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  252. Tsai Ming-Shyong,TWX ; Chen Li-Mei,TWX ; Yeh Yue-Chin,TWX ; Hsieh Chiu-Chih,TWX ; Chen Ying-Tsung,TWX, Polishing composition.
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  253. Ohno,Koji; Horikawa,Chiyo; Sakai,Kenji; Tamai,Kazusei; Ina,Katsuyoshi, Polishing composition and method for forming wiring structure using the same.
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  254. Carter, Phillip W.; Johns, Timothy, Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios.
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  255. Carter,Phillip W.; Johns,Timothy P., Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios.
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  256. Dysard, Jeffrey M.; Johns, Timothy P., Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios.
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  257. Dysard, Jeffrey M.; Johns, Timothy P., Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios.
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  258. Dysard, Jeffrey; Anjur, Sriram; Grumbine, Steven; White, Daniela; Ward, William, Polishing composition and method utilizing abrasive particles treated with an aminosilane.
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  259. Grumbine, Steven; Li, Shoutian; Ward, William; Singh, Pankaj; Dysard, Jeffrey, Polishing composition and method utilizing abrasive particles treated with an aminosilane.
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  260. Horikawa, Chiyo; Ohno, Koji; Tamai, Kazusei, Polishing composition and polishing method.
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  261. Ohno, Koji; Sakai, Kenji; Ina, Katsuyoshi, Polishing composition and polishing method employing it.
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  262. Cherian, Isaac K.; Zhang, Jian; Sun, Fred; Wang, Shumin; Klingenberg, Eric H., Polishing composition containing conducting polymer.
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  263. Lorpitthaya, Rujee; Palanisamy Chinnathambi, Selvaraj; Siriwardane, Haresh, Polishing composition containing hybrid abrasive for nickel-phosphorous coated memory disks.
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  264. Kollodge, Jeffrey S., Polishing fluids and methods for CMP.
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  265. Kollodge,Jeffrey S., Polishing fluids and methods for CMP.
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  266. Jimin Zhang ; Ken Cummings ; Mike Lojero ; Hector Salcedo ; Zeyang Zhou ; Buu Van ; Shapour Bakhtiari, Polishing memory disk substrates with reclaim slurry.
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  267. Kato Hiroshi,JPX ; Hayashi Kazuhiko,JPX ; Kohno Hiroyuki,JPX, Polishing slurries and a process for the production thereof.
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  268. Wang Jiun-Fang (Hockessin DE) Sethuraman Anantha (Wilmington DE) Wang Huey-Ming (Wilmington DE) Cook Lee Melbourne (Steelville PA), Polishing slurries comprising two abrasive components and methods for their use.
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  269. John V. H. Roberts ; Lee Melbourne Cook ; William D. Budinger, Polishing slurry compositions capable of providing multi-modal particle packing.
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  270. Roberts John V. H. ; Cook Lee Melbourne ; Budinger William D., Polishing slurry compositions capable of providing multi-modal particle packing and methods relating thereto.
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  271. Moeggenborg,Kevin J.; Sun,Fred F., Polishing system comprising a highly branched polymer.
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  272. Juy-Lung Li ; Tse-Yong Yao ; Fred C. Redeker ; Rajeev Bajaj ; Yutao Ma, Post CU CMP polishing for reduced defects.
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  273. Small, Robert J., Post clean treatment.
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  274. Yu, Chris C.; Brusic, Vlasta, Process for fabricating optical switches.
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  275. Farkas Janos ; Das Sanjit K. ; Meyer George R., Process for forming a semiconductor device.
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  276. Uzoh Cyprian Emeka, Process for integrated circuit wiring.
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  277. Naofumi Ohashi JP; Junji Noguchi JP; Toshinori Imai JP; Hizuru Yamaguchi JP; Nobuo Owada JP; Kenji Hinode JP; Yoshio Homma JP; Seiichi Kondo JP, Process for manufacturing semiconductor integrated circuit device.
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  278. Naofumi Ohashi JP; Junji Noguchi JP; Toshinori Imai JP; Hizuru Yamaguchi JP; Nobuo Owada JP; Kenji Hinode JP; Yoshio Homma JP; Seiichi Kondo JP, Process for manufacturing semiconductor integrated circuit device.
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  279. Ohashi, Naofumi; Noguchi, Junji; Imai, Toshinori; Yamaguchi, Hizuru; Owada, Nobuo; Hinode, Kenji; Homma, Yoshio; Kondo, Seiichi, Process for manufacturing semiconductor integrated circuit device.
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  280. Ohashi, Naofumi; Noguchi, Junji; Imai, Toshinori; Yamaguchi, Hizuru; Owada, Nobuo; Hinode, Kenji; Homma, Yoshio; Kondo, Seiichi, Process for manufacturing semiconductor integrated circuit device.
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  281. Ohashi, Naofumi; Noguchi, Junji; Imai, Toshinori; Yamaguchi, Hizuru; Owada, Nobuo; Hinode, Kenji; Homma, Yoshio; Kondo, Seiichi, Process for manufacturing semiconductor integrated circuit device.
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  282. Ohashi, Naofumi; Noguchi, Junji; Imai, Toshinori; Yamaguchi, Hizuru; Owada, Nobuo; Hinode, Kenji; Homma, Yoshio; Kondo, Seiichi, Process for manufacturing semiconductor integrated circuit device.
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  283. Ohashi,Naofumi; Noguchi,Junji; Imai,Toshinori; Yamaguchi,Hizuru; Owada,Nobuo; Hinode,Kenji; Homma,Yoshio; Kondo,Seiichi, Process for manufacturing semiconductor integrated circuit device.
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  284. Darsillo, Michael S.; Fluck, David J.; Laufhutte, Rudiger, Recording medium.
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  285. Darsillo,Michael S.; Fluck,David J.; Laufhutte,Rudiger, Recording medium with glossy coating containing alumina.
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  286. Katrina A. Mikhaylich ; John M. Boyd, Sacrificial retaining ring CMP system and methods for implementing the same.
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  287. Sekar, Deepak C.; Or-Bach, Zvi, Self aligned semiconductor device and structure.
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