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Protective overlayer material and electro-optical coating using same 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G02F-001/15
  • G02F-001/03
출원번호 US-0456268 (1995-05-31)
발명자 / 주소
  • Cogan Stuart F. (Sudbury MA)
출원인 / 주소
  • EIC Laboratories, Inc. (Norwood MA 02)
인용정보 피인용 횟수 : 150  인용 특허 : 0

초록 ▼

An electro-optical device comprising a series of thin films with an electrically controllable optical state provided with a protective overlayer that has a high optical transmittance and high resistance to penetration by H2O. The protective overlayer is a film of amorphous silicon oxycarbide (a-SiOC

대표청구항 ▼

An electro-optical device comprising; a substrate; an electrochromic coating comprising at least one thin electrochromic film, said thin electrochromic film having an electrically controllable optical state, disposed on said substrate, and a protective overlayer disposed on said electrochromic coati

이 특허를 인용한 특허 (150)

  1. Cheung David ; Yau Wai-Fan ; Mandal Robert R., CVD plasma assisted low dielectric constant films.
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  11. Martinez,Nelson F., Cellular communication handsets having variable appearance housings and methods therefor.
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  13. Gupta,Bhusan; Kramer,Alan, Command interface using fingerprint sensor input system.
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  14. Cheung, David; Yau, Wai-Fan; Mandal, Robert R., Computer readable medium for holding a program for performing plasma-assisted CVD of low dielectric constant films formed from organosilane compounds.
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  15. Ahn, Kie Y.; Forbes, Leonard, Conductive layers for hafnium silicon oxynitride.
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  18. Lamine, Driss; Valentin, Emmanuel; Dubrenat, Samuel, Controlled-transparency electrochromic device.
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  36. Padiyath, Raghunath; Roehrig, Mark A., Flexible high-temperature ultrabarrier.
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  39. Henn, Christian; Gabel, Falk, Glass or glass-ceramic article coated with hard material and method for production thereof.
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  40. Forbes Leonard ; Ahn Kie Y., Graded anti-reflective coating for IC lithography.
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  41. Forbes, Leonard; Eldridge, Jerome M., Graded composition gate insulators to reduce tunneling barriers in flash memory devices.
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  45. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup, Hafnium tantalum oxynitride dielectric.
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  47. Ahn, Kie Y.; Forbes, Leonard, Hafnium tantalum titanium oxide films.
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  48. Noble, Wendell P.; Forbes, Leonard, Highly conductive composite polysilicon gate for CMOS integrated circuits.
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  50. Sbar, Neil L.; Van Dine, John E.; McCoy, Michael A., Lamination of electrochromic device to glass substrates.
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  51. Sbar, Neil L.; Van Dine, John E.; McCoy, Michael A., Lamination of electrochromic device to glass substrates.
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  52. Sbar, Neil L.; Van Dine, John E.; McCoy, Michael A., Lamination of electrochromic device to glass substrates.
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  53. Sbar, Neil L.; Van Dine, John E.; McCoy, Michael A., Lamination of electrochromic device to glass substrates.
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  55. Ahn, Kie Y.; Forbes, Leonard, Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics.
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  56. Ahn,Kie Y.; Forbes,Leonard, Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics.
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  57. Ahn, Kie Y.; Forbes, Leonard, Low-temperature grown high quality ultra-thin CoTiOgate dielectrics.
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  58. Forbes,Leonard; Geusic,Joseph E., Memory device.
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  59. Forbes,Leonard; Geusic,Joseph E., Memory device.
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  65. Forbes, Leonard; Ahn, Kie Y., Memory utilizing oxide-conductor nanolaminates.
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  87. Cheng Chung Lin TW; Shwang Ming Jeng TW; Lain Jong Li TW, Method to improve the crack resistance of CVD low-k dielectric constant material.
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  88. Ahn, Kie Y.; Forbes, Leonard; Farrar, Paul A., Methods and structures for metal interconnections in integrated circuits.
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  89. Ahn, Kie Y.; Forbes, Leonard; Farrar, Paul A., Methods and structures for metal interconnections in integrated circuits.
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  91. Forbes, Leonard; Farrar, Paul A.; Ahn, Kie Y., Methods and structures for silver interconnections in integrated circuits.
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  92. Li, Ming; Van Schravendijk, Bart; Mountsier, Tom; Chi, Chiu; Ilcisin, Kevin; Hsieh, Julian, Methods of forming moisture barrier for low K film integration with anti-reflective layers.
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  95. Forbes,Leonard, NOR flash memory cell with high storage density.
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  96. Forbes,Leonard, NOR flash memory cell with high storage density.
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  97. Forbes,Leonard, NOR flash memory cell with high storage density.
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  98. Forbes, Leonard, Nanocrystal write once read only memory for archival storage.
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  102. Forbes,Leonard, Nor flash memory cell with high storage density.
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  112. Cheung, David; Yau, Wai-Fan; Mandal, Robert P.; Jeng, Shin-Puu; Liu, Kuo-Wei; Lu, Yung-Cheng; Barnes, Michael; Willecke, Ralf B.; Moghadam, Farhad; Ishikawa, Tetsuya; Poon, Tze Wing, Plasma processes for depositing low dielectric constant films.
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  113. Cheung, David; Yau, Wai-Fan; Mandal, Robert P.; Jeng, Shin-Puu; Liu, Kuo-Wei; Lu, Yung-Cheng; Barnes, Michael; Willecke, Ralf B.; Moghadam, Farhad; Ishikawa, Tetsuya; Poon, Tze Wing, Plasma processes for depositing low dielectric constant films.
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  114. David Cheung ; Wai-Fan Yau ; Robert P. Mandal ; Shin-Puu Jeng TW; Kuo-Wei Liu ; Yung-Cheng Lu ; Michael Barnes ; Ralf B. Willecke ; Farhad Moghadam ; Tetsuya Ishikawa ; Tze Wing Poon, Plasma processes for depositing low dielectric constant films.
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  115. Ahn Kie Y. ; Forbes Leonard, Porous silicon oxycarbide integrated circuit insulator.
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  116. Ahn, Kie Y.; Forbes, Leonard, Porous silicon oxycarbide integrated circuit insulator.
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  117. Ahn, Kie Y.; Forbes, Leonard, Porous silicon oxycarbide integrated circuit insulator.
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  118. Kie Y. Ahn ; Leonard Forbes, Porous silicon oxycarbide integrated circuit insulator.
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  119. Rocha-Alvarez, Juan Carlos; Chen, Chen-An; Yieh, Ellie; Venkataraman, Shankar, Purge heater design and process development for the improvement of low k film properties.
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  122. Bryant Frank R. ; Thomas Danielle A., Selectively doped electrostatic discharge layer for an integrated circuit sensor.
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  123. Bryant, Frank R.; Thomas, Danielle A., Selectively doped electrostatic discharge layer for an integrated circuit sensor.
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  125. Nakajima, Tatsuji; Ichimura, Koji, Silica layers and antireflection film using same.
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  126. Forbes, Leonard; Ahn, Kie Y., Silicon carbide gate transistor.
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  127. Forbes, Leonard; Ahn, Kie Y., Silicon carbide gate transistor and fabrication process.
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  128. Oudard,Jean Francois, Silicon oxycarbide coatings having durable hydrophilic properties.
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  129. Forbes, Leonard, Static NVRAM with ultra thin tunnel oxides.
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  130. Shao, Huili; Steiner, Kurt G.; Vitkavage, Susan C., Surface treatment anneal of hydrogenated silicon-oxy-carbide dielectric layer.
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  131. Forbes, Leonard; Ahn, Kie Y.; Bhattacharyya, Arup, Tantalum aluminum oxynitride high-K dielectric.
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  132. Forbes, Leonard; Akram, Salman, Technique to control tunneling currents in DRAM capacitors, cells, and devices.
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  133. Forbes, Leonard; Akram, Salman, Technique to control tunneling currents in DRAM capacitors, cells, and devices.
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  134. Forbes,Leonard; Akram,Salman, Technique to control tunneling currents in DRAM capacitors, cells, and devices.
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  135. Choi, Joon Hoo; Hong, Wan Shick; Kwon, Dae Jin; Jung, Kwan Wook; Kim, Sang Gab; Jung, Kyu Ha, Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same.
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  136. Forbes Leonard ; Geusic Joseph E. ; Ahn Kie Y., Transistor with silicon oxycarbide gate and methods of fabrication and use.
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  137. Forbes,Leonard; Ahn,Kie Y., Transistor with variable electron affinity gate.
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  138. Forbes, Leonard; Ahn, Kie Y., Transistor with variable electron affinity gate and methods of fabrication and use.
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  139. Forbes, Leonard; Ahn, Kie Y., Transistor with variable electron affinity gate and methods of fabrication and use.
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  140. Forbes, Leonard; Ahn, Kie Y., Transistor with variable electron affinity gate and methods of fabrication and use.
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  141. Cording, Christopher R.; Masumo, Kunio; Agustsson, Sveinn Otto, Transparent conductive oxide coating for thin film photovoltaic applications and methods of making the same.
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  142. Forbes, Leonard, Write once read only memory employing charge trapping in insulators.
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  143. Forbes,Leonard, Write once read only memory employing charge trapping in insulators.
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  144. Forbes,Leonard, Write once read only memory employing charge trapping in insulators.
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  145. Forbes,Leonard, Write once read only memory employing floating gates.
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  146. Forbes,Leonard, Write once read only memory employing floating gates.
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  147. Forbes,Leonard, Write once read only memory employing floating gates.
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  148. Forbes,Leonard, Write once read only memory with large work function floating gates.
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  149. Forbes,Leonard, Write once read only memory with large work function floating gates.
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  150. Ahn, Kie Y.; Forbes, Leonard, Zirconium-doped tantalum oxide films.
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