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Semiconductor device having transistors with different orientations of crystal channel growth with respect to current ca 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/04
  • H01L-031/036
출원번호 US-0294740 (1994-08-23)
우선권정보 JP-0235461 (1993-08-27)
발명자 / 주소
  • Takemura Yasuhiko (Kanagawa JPX)
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd. (Kanagawa-ken JPX 03)
인용정보 피인용 횟수 : 264  인용 특허 : 0

초록

A silicon film is crystallized in a predetermined direction by selectively adding a metal element having a catalytic action for crystallizing an amorphous silicon and annealing. In manufacturing TFT using the crystallized silicon film, TFT provided such that the crystallization direction is roughly

대표청구항

A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein the thin film transistors each have a crystalline silicon region crystal-grown in a crystal growth direction parallel to the substrate and a silicon oxide layer covering the crys

이 특허를 인용한 특허 (264)

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  163. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
  164. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  165. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  166. Hiroki Adachi JP; Akira Takenouchi JP; Takeshi Fukada JP; Hiroshi Uehara JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
  167. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Takeshi Fukunaga JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
  168. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  169. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  170. Miyanaga,Akiharu; Ohtani,Hisashi; Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
  171. Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Yamazaki,Shunpei; Kuwabara,Hideaki, Semiconductor device and method for manufacturing the same.
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  173. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  174. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  175. Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
  176. Takemura,Yasuhiro, Semiconductor device and method for manufacturing the same.
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  180. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device and method for producing it.
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  206. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Semiconductor device forming method.
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  208. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor device having a catalyst enhanced crystallized layer.
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  210. Zhang, Hongyong; Takayama, Toru, Semiconductor device having channel formation region comprising silicon and containing a group IV element.
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  212. Zhang Hongyong,JPX, Semiconductor device having improved crystal orientation.
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  217. Yamazaki, Shunpei, Semiconductor device with heat-resistant gate.
  218. Ohnuma, Hideto, Semiconductor display device and manufacturing method thereof.
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  223. Shunpei Yamazaki JP; Hisashi Ohtani JP; Toru Mitsuki JP; Akiharu Miyanaga JP; Yasushi Ogata JP, Semiconductor thin film and semiconductor device.
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  236. Im, James S., Single-shot semiconductor processing system and method having various irradiation patterns.
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  245. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Thin film transistor having grain boundaries with segregated oxygen and halogen elements.
  246. Uochi Hideki,JPX ; Takemura Yasuhiko,JPX, Thin film transistor including a catalytic element for promoting crystallization of a semiconductor film.
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  252. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.
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  256. Ohnuma, Hideto; Yamazaki, Shunpei, Thin-film transistor and semiconductor device using thin-film transistors.
  257. Uochi Hideki,JPX ; Takemura Yasuhiko,JPX, Transistor and method of forming the same.
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  259. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko; Miyanaga, Akiharu; Ohtani, Hisashi, Transistor and semiconductor device having columnar crystals.
  260. Hideki Uochi JP; Yasuhiko Takemura JP, Transistor device and method of forming the same.
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  263. Im, James S.; Sposili, Robert S.; Crowder, Mark A., Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon.
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