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Semiconductor device having high voltage protection capability

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-023/62
출원번호 US-0433883 (1995-05-02)
발명자 / 주소
  • Shen Zheng (Chandler AZ) Robb Stephen P. (Tempe AZ)
출원인 / 주소
  • Motorola, Inc. (Schaumburg IL 02)
인용정보 피인용 횟수 : 36  인용 특허 : 0

초록

A semiconductor device is presented having an improved high voltage protection scheme that comprises an integrated Schottky diode (28) in conjunction with a plurality of back to back diodes (29) to limit a voltage potential that may arise between the gate (26) and drain terminals (27) of a semicondu

대표청구항

A power MOSFET device having high voltage protection from voltages exceeding 500 volts, comprising: a semiconductor substrate of a first conductivity type serving as a drain electrode; an active region of the first conductivity type deposited on the semiconductor substrate; an insulating layer conti

이 특허를 인용한 특허 (36)

  1. Li, Jianhua; Sattler, Frank; Hiltawsky, Karsten, Active protective circuit for a measuring amplifier in an electrode belt for an electrical impedance tomograph.
  2. Su, Yi; Bhalla, Anup; Ng, Daniel, Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection.
  3. Su, Yi; Bhalla, Anup; Ng, Daniel, Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection.
  4. Leroux, Charles, Device providing protection against electrostatic discharges for microelectronic components on a SOI-type substrate.
  5. Russ, Cornelius Christian; Alvarez, David, Diode biased ESD protection device and method.
  6. Russ, Cornelius Christian; Alvarez, David, Diode biased ESD protection device and method.
  7. Russ, Cornelius Christian; Alvarez, David, Diode biased ESD protection device and method.
  8. Russ, Cornelius Christian; Alvarez, David, Diode biased ESD protection devices and methods.
  9. Buchanan, Walter R.; Hamerski, Roman J.; Smith, Wayne A., Distributed reverse surge guard.
  10. Russ, Cornelius Christian; Alvarez, David, ESD protection device and method.
  11. Roig-Guitart, Jaume; Bauwens, Filip; Tong, Chin Foong, Electronic circuit including a switch having an associated breakdown voltage and a method of using the same.
  12. Bradley, Paul D., Electrostatic discharge protection of thin-film resonators.
  13. Yasuda, Yukio, IGBT with a Schottky barrier diode.
  14. Yukio Yasuda JP, IGBT, control circuit, and protection circuit on same substrate.
  15. Mallikarjunaswamy, Shekar; Imtiaz, Sohel, Insulated gate bipolar transistor and electrostatic discharge cell protection utilizing insulated gate bipolar transistors.
  16. Mayerhofer, Michael; Willemen, Joost; Johnsson, David, Integrated circuit including ESD device.
  17. Harada,Hirofumi, MOS field-effect transistor.
  18. Buchanan, Walter R.; Hamerski, Roman J., Method of manufacturing a schottky device.
  19. Mamitsu, Kuniaki, Power semiconductor device.
  20. Hsieh, Fu-Yuan, Power semiconductor devices integrated with clamp diodes sharing same gate metal pad.
  21. Ootsuka, Hiroyuki; Katayama, Hideaki, Protective circuit.
  22. Aiello Natale,ITX ; La Barbera Atanasio,ITX, Protective integrated structure with biasing devices having a predetermined reverse conduction threshold.
  23. Walter R. Buchanan ; Roman J. Hamerski, Schottky device.
  24. Nakazawa, Yoshito; Yatsuda, Yuji, Semiconductor device and manufacturing method of the same.
  25. Nakazawa, Yoshito; Yatsuda, Yuji, Semiconductor device and manufacturing method of the same.
  26. Nakazawa, Yoshito; Yatsuda, Yuji, Semiconductor device and manufacturing method of the same.
  27. Nakazawa, Yoshito; Yatsuda, Yuji, Semiconductor device and manufacturing method of the same.
  28. Nakazawa, Yoshito; Yatsuda, Yuji, Semiconductor device and manufacturing method of the same.
  29. Nakazawa, Yoshito; Yatsuda, Yuji, Semiconductor device and manufacturing method of the same.
  30. Nakazawa, Yoshito; Yatsuda, Yuji, Semiconductor device and manufacturing method of the same.
  31. Nakazawa, Yoshito; Yatsuda, Yuji, Semiconductor device and manufacturing method of the same.
  32. Hara, Kenji; Sakano, Junichi; Shirakawa, Shinji, Semiconductor device and semiconductor integrated circuit device for driving plasma display using the semiconductor device.
  33. Kobayashi Kenya,JPX, Semiconductor device with Zener diode for gate protection, and method for fabricating the same.
  34. Hurkx, Godefridus A. M.; Schligtenhorst, Holger; Sievers, Bernd, Semiconductor device with a bipolar transistor, and method of manufacturing such a device.
  35. Hotta,Koji, Semiconductor devices with electric current detecting structure.
  36. Robb, Francine Y.; Pearse, Jeffrey, Transient voltage suppressor with diode overlaying another diode for conserving space.
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