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Three dimensional amorphous silicon/microcrystalline silicon solar cells 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-031/068
  • H01L-031/18
출원번호 US-0214750 (1994-03-18)
발명자 / 주소
  • Kaschmitter James L. (Pleasanton CA)
출원인 / 주소
  • Regents of the University of California (Oakland CA 02)
인용정보 피인용 횟수 : 171  인용 특허 : 0

초록

Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/m

대표청구항

In a process for fabricating solar cells, the improvement comprising: forming high aspect ratio contacts in a carrier collection material by repetitive pulsed laser doping to create p and n contacts having a depth substantially greater than the width thereof, resulting in very high current collectio

이 특허를 인용한 특허 (171)

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