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Monolithic passive component 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/00
  • H01L-021/465
출원번호 US-0389732 (1995-02-15)
발명자 / 주소
  • Abidi Asad A. (Los Angeles CA) Chang James Y.-C. (Los Angeles CA)
출원인 / 주소
  • The Regents of the University of California (Oakland CA 02)
인용정보 피인용 횟수 : 129  인용 특허 : 0

초록

An integrated circuit having a monolithic device such as an inductor suspended over a pit in the substrate to reduce parasitic capacitances and enhance the self-resonant frequency of the inductor.

대표청구항

A monolithic integrated circuit, comprising: a silicon substrate having a surface and provided with a pit which defines a space located below the substrate surface and which opens at the substrate surface; a plurality of semiconductor circuit elements formed on the substrate; an insulating layer for

이 특허를 인용한 특허 (129)

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