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Method for manufacturing offset polysilicon thin-film transistor 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/336
출원번호 US-0363201 (1994-12-27)
우선권정보 KR-0030232 (1993-12-28)
발명자 / 주소
  • Lee Joo-hyung (Seoul KRX)
출원인 / 주소
  • Samsung Electronics Co., Ltd. (Suwon KRX 03)
인용정보 피인용 횟수 : 60  인용 특허 : 0

초록 ▼

In a method for fabricating an offset polysilicon thin-film transistor through the formation of silicide, the width of offset regions can be controlled as a narrow width of below 1 m

대표청구항 ▼

A method of manufacturing an offset polysilicon thin-film transistor having a silicide covered polysilicon gate disposed between source and drain regions formed in an active semiconductor layer, comprising the steps of: forming a polysilicon gate having a first thickness over the active semiconducto

이 특허를 인용한 특허 (60)

  1. Yamazaki, Shunpei, Device comprising EL element electrically connected to P-channel transistor.
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  2. Yamazaki, Shunpei, Electro-optical device and manufacturing method thereof.
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  3. Yamazaki, Shunpei, Electro-optical device and manufacturing method thereof.
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  4. Yamazaki,Shunpei, Electro-optical device and manufacturing method thereof.
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  5. Yamazaki,Shunpei, Electro-optical device and manufacturing method thereof.
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  8. Park,Sang Il; Koo,Jae Bon, Flat panel display.
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  9. Moslehi Mehrdad M., Insulated-gate field-effect transistor structure and method.
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  10. Yamazaki, Shunpei; Fukunaga, Takeshi; Koyama, Jun; Inukai, Kazutaka, Light emitting device and fabricating method thereof.
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  11. Yamazaki,Shunpei; Fukunaga,Takeshi; Koyama,Jun; Inukai,Kazutaka, Light emitting device and fabrication method thereof.
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  12. Yamazaki, Shunpei; Fukunaga, Takeshi; Koyama, Jun; Inukai, Kazutaka, Light emitting device and manufacturing method thereof.
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  13. Yamazaki, Shunpei; Fukunaga, Takeshi; Koyama, Jun; Inukai, Kazutaka, Light emitting device and manufacturing method thereof.
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  14. Yamazaki, Shunpei, Light-emitting device having a triple-layer wiring structure.
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  15. Ha Yong Min (Kyongki-do KRX), Method for fabricating a thin film transistor using silicide layer.
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  16. Agnello Paul D. ; Smeys Peter I., Method for fabricating abrupt source/drain extensions with controllable gate electrode overlap.
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  17. Yamazaki, Shunpei, Method of fabricating a semiconductor device.
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  18. Yamazaki, Shunpei, Method of fabricating a semiconductor device.
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  19. Yamazaki, Shunpei, Method of fabricating a semiconductor device.
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  20. Lee Chang-Jae (Choongchungbook-do KRX) Kim Tae Gak (Seoul KRX), Method of fabricating silicided LDD transistor.
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  21. Yamazaki, Shunpei; Ohtani, Hisashi; Suzawa, Hideomi; Takayama, Toru, Method of forming a semiconductor device.
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  22. Yamazaki,Shunpei, Method of manufacturing a semiconductor device having a gate electrode with a three layer structure.
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  23. Yamazaki, Shunpei; Koyama, Jun; Hayashi, Keisuke, Nonvolatile memory and manufacturing method thereof.
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  24. Yamazaki, Shunpei; Koyama, Jun; Hayashi, Keisuke, Nonvolatile memory and manufacturing method thereof.
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  25. Yamazaki, Shunpei; Koyama, Jun; Hayashi, Keisuke, Nonvolatile memory and manufacturing method thereof.
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  26. Yamazaki,Shunpei; Koyama,Jun; Hayashi,Keisuke, Nonvolatile memory and manufacturing method thereof.
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  27. Yamazaki,Shunpei; Koyama,Jun; Hayashi,Keisuke, Nonvolatile memory and manufacturing method thereof.
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  28. Hamm, Thomas; Mueller, Beno, Optical device.
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  29. Yamazaki, Shunpei, Semiconductor device.
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  30. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
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  31. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
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  32. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
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  33. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
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  34. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
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  35. Suzawa, Hideomi; Ono, Koji; Takayama, Toru; Arao, Tatsuya; Yamazaki, Shunpei, Semiconductor device and manufacturing method thereof.
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  36. Suzawa,Hideomi; Ono,Koji; Takayama,Toru; Arao,Tatsuya; Yamazaki,Shunpei, Semiconductor device and manufacturing method thereof.
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  37. Suzawa,Hideomi; Ono,Koji; Takayama,Toru; Arao,Tatsuya; Yamazaki,Shunpei, Semiconductor device and manufacturing method thereof.
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  38. Suzawa, Hideomi; Ono, Koji; Takayama, Toru, Semiconductor device and method for manufacturing same.
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  39. Suzawa, Hideomi; Ono, Koji; Takayama, Toru, Semiconductor device and method for manufacturing same.
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  40. Konuma, Toshimitsu; Sugawara, Akira; Uehara, Yukiko; Zhang, Hongyong; Suzuki, Atsunori; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
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  41. Konuma,Toshimitsu; Sugawara,Akira; Uehara,Yukiko; Zhang,Hongyong; Suzuki,Atsunori; Ohnuma,Hideto; Yamaguchi,Naoaki; Suzawa,Hideomi; Uochi,Hideki; Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
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  42. Suzawa, Hideomi; Ono, Koji; Takayama, Toru, Semiconductor device and method for manufacturing the same.
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  43. Shunpei Yamazaki JP; Jun Koyama JP, Semiconductor device and method of fabricating the same.
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  44. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and method of fabricating the same.
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  45. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and method of fabricating the same.
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  46. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and method of fabricating the same.
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  47. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and method of fabricating the same.
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  48. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and method of fabricating the same.
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  49. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and method of fabricating the same.
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  50. Yamazaki,Shunpei; Koyama,Jun, Semiconductor device and method of fabricating the same.
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  51. Yamazaki,Shunpei; Ohtani,Hisashi; Suzawa,Hideomi; Takayama,Toru, Semiconductor device and method of fabricating the same.
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  52. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device comprising a pixel unit including an auxiliary capacitor.
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  53. Yamazaki,Shunpei, Semiconductor device comprising thin film transistor comprising conductive film having tapered edge.
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  54. Konuma, Toshimitsu; Sugawara, Akira; Uehara, Yukiko; Zhang, Hongyong; Suzuki, Atsunori; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki; Takemura, Yasuhiko, Semiconductor device having pixel electrode and peripheral circuit.
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  55. Konuma, Toshimitsu; Sugawara, Akira; Uehara, Yukiko; Zhang, Hongyong; Suzuki, Atsunori; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki; Takemura, Yasuhiko, Semiconductor device including transistors with silicided impurity regions.
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  56. Konuma, Toshimitsu; Sugawara, Akira; Uehara, Yukiko; Zhang, Hongyong; Suzuki, Atsunori; Ohnuma, Hideto; Yamaguchi, Naoaki; Suzawa, Hideomi; Uochi, Hideki; Takemura, Yasuhiko, Semiconductor device including transistors with silicided impurity regions.
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  57. Suzawa,Hideomi; Ono,Koji; Takayama,Toru, Semiconductor device that includes a gate insulating layer with three different thicknesses.
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  58. Paul D. Agnello ; Peter I. Smeys, Semiconductor device with abrupt source/drain extensions with controllable gate electrode overlap.
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  59. Yamazaki, Shunpei, Semiconductor device with tapered gates.
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  60. Ohnuma, Hideto, Semiconductor display device and manufacturing method thereof.
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