이 특허를 인용한 특허 (264)

1. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Display switch with double layered gate insulation and resinous interlayer dielectric.

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2. Schindler Roland,DEX, Doping process for producing homojunctions in semiconductor substrates.

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3. Ohtani Hisashi,JPX ; Koyama Jun,JPX ; Yamazaki Shunpei,JPX, Electro-optical device and semiconductor circuit.

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4. Ohtani,Hisashi; Koyama,Jun; Yamazaki,Shunpei, Electro-optical device and semiconductor circuit.

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5. Ohtani,Hisashi; Koyama,Jun; Yamazaki,Shunpei, Electro-optical device and semiconductor circuit.

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6. Ohtani, Hisashi; Koyama, Jun; Yamazaki, Shunpei, Electro-optical device and semiconductor device.

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7. Yamauchi, Yukio; Fukunaga, Takeshi, Electronic device and electronic apparatus.

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8. Stephen J. Fonash ; Ali Kaan Kalkan ; Robert H. Detig, Electrostatic printing of a metallic toner applied to solid phase crystallization and silicidation.

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9. Fonash Stephen J. ; Kalkan Ali Kaan ; Detig Robert H., Electrostatic printing of a metallic toner to produce a polycrystalline semiconductor from an amorphous semiconductor.

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10. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Fabrication method of semiconductor device.

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11. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Fabrication method of semiconductor device.

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12. Yamazaki,Shunpei; Kusumoto,Naoto; Tanaka,Koichiro, Laser annealing method and apparatus.

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13. Yamazaki,Shunpei; Ohtani,Hisashi; Tanaka,Koichiro; Kasahara,Kenji; Kawasaki,Ritsuko, Laser annealing method and manufacturing method of a semiconductor device.

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14. Yamazaki, Shunpei; Ohtani, Hisashi; Tanaka, Koichiro; Kasahara, Kenji; Kawasaki, Ritsuko, Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device.

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15. Yamazaki, Shunpei; Ohtani, Hisashi; Tanaka, Koichiro; Kasahara, Kenji; Kawasaki, Ritsuko, Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device.

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16. Yamazaki, Shunpei; Ohtani, Hisashi; Tanaka, Koichiro; Kasahara, Kenji; Kawasaki, Ritsuko, Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device.

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17. Yamazaki,Shunpei; Ohtani,Hisashi; Tanaka,Koichiro; Kasahara,Kenji; Kawasaki,Ritsuko, Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device.

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18. Yamazaki, Shunpei; Tanaka, Koichiro; Kusumoto, Naoto, Laser irradiation apparatus and laser irradiation method.

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19. Tanaka, Koichiro; Yamazaki, Shunpei; Kawasaki, Ritsuko, Laser irradiation apparatus laser irradiation method, semiconductor device and method of manufacturing a semiconductor device.

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20. Koichiro Tanaka JP, Laser irradiation apparatus, laser irradiation method, beam homogenizer, semiconductor device, and method of manufacturing the semiconductor device.

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21. Tanaka,Koichiro; Yamazaki,Shunpei; Kawasaki,Ritsuko, Laser irradiation apparatus, laser irradiation method, semiconductor device, and method of manufacturing a semiconductor device.

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22. Tanaka Koichiro,JPX ; Yamaguchi Naoaki,JPX, Laser processing method of semiconductor device.

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23. Yamazaki, Shunpei; Arai, Yasuyuki, Manufacturing method for top-gate type and bottom-gate type thin film transistors.

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24. Maekawa, Shinji; Miyairi, Hidekazu, Manufacturing method of semiconductor device.

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25. Maekawa, Shinji; Miyairi, Hidekazu, Manufacturing method of semiconductor device.

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26. Maekawa,Shinji; Miyairi,Hidekazu, Manufacturing method of semiconductor device.

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27. Moriwaka, Tomoaki, Manufacturing method of semiconductor device.

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28. Ohtani, Hisashi, Metal-gettering method used in the manufacture of crystalline-Si TFT.

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29. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Miyanaga Akiharu,JPX, Method and manufacturing semiconductor device.

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30. Makita Naoki,JPX ; Miyamoto Tadayoshi,JPX ; Shibuya Tsukasa,JPX, Method for fabricating a semiconductor device.

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31. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Method for fabricating a semiconductor device.

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32. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Method for fabricating a semiconductor device.

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33. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Method for fabricating a semiconductor device.

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34. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP, Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization.

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35. Choi, Duck-Kyun, Method for fabricating a thin film transistor.

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36. Maekawa,Shinji; Akimoto,Kengo, Method for fabricating thin film transistor.

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37. Funai Takashi,JPX ; Makita Naoki,JPX ; Yamamoto Yoshitaka,JPX ; Miyamoto Tadayoshi,JPX ; Kousai Takamasa,JPX ; Maekawa Masashi,JPX, Method for fabricating thin film transistors.

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38. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Fukunaga Takeshi,JPX ; Takemura Yasuhiko,JPX, Method for forming a semiconductor device.

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39. Yamazaki Shunpei,JPX ; Komaya Jun,JPX ; Miyanaga Akiharu,JPX ; Fukunaga Takeshi,JPX, Method for forming semiconductor thin film.

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40. Hisashi Ohtani JP; Hiroki Adachi JP; Akiharu Miyanaga JP; Toru Takayama JP, Method for manufacturing a semiconductor device.

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41. Ohtani,Hisashi; Adachi,Hiroki; Miyanaga,Akiharu; Takayama,Toru, Method for manufacturing a semiconductor device.

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42. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Method for manufacturing a semiconductor device.

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43. Yamazaki,Shunpei; Yamaguchi,Naoaki; Nakajima,Setsuo, Method for manufacturing a semiconductor device.

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44. Yasuhiko Takemura JP, Method for manufacturing a semiconductor device.

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45. Shimomura,Akihisa; Ohnuma,Hideto; Shoji,Hironobu, Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device.

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46. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Method for manufacturing a thin film transistor device.

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47. Yamazaki, Shunpei; Takemura, Yasuhiko, Method for manufacturing a thin film transistor using a high pressure oxidation step.

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48. Ohnuma,Hideto; Inoue,Kouki, Method for manufacturing semiconductor device.

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49. Ohtani, Hisashi; Miyanaga, Akiharu; Teramoto, Satoshi; Yamazaki, Shunpei, Method for manufacturing semiconductor device.

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50. Ohtani, Hisashi; Miyanaga, Akiharu; Teramoto, Satoshi; Yamazaki, Shunpei, Method for manufacturing semiconductor device.

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51. Shimomura,Akihisa; Koyama,Masaki; Shoji,Hironobu, Method for manufacturing semiconductor device, and laser irradiation apparatus.

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52. Tanaka, Koichiro; Ohnuma, Hideto, Method for manufacturing transistor semiconductor devices with step of annealing to getter metal with phosphorous.

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53. Ohtani Hisashi,JPX, Method for producing a semiconductor device.

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54. Hongyong Zhang JP; Yasuhiko Takemura JP; Toru Takayama JP, Method for producing semiconductor device.

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55. Ohtani Hisashi,JPX ; Fukunaga Takeshi,JPX ; Miyanaga Akiharu,JPX, Method for producing semiconductor device.

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56. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Ohnuma Hideto,JPX, Method for producing semiconductor device.

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57. Yamazaki, Shunpei; Ohtani, Hisashi; Ohnuma, Hideto, Method for producing semiconductor device.

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58. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Method for producing semiconductor device.

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59. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Method for producing semiconductor device.

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60. Zhang, Hongyong; Takemura, Yasuhiko; Takayama, Toru, Method for producing semiconductor device.

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61. Kasahara, Kenji; Kawasaki, Ritsuko; Ohtani, Hisashi; Yamazaki, Shunpei, Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces.

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62. Jang, Jin; Yoon, Soo-Young; Oh, Jae-Young; Shon, Woo-Sung; Park, Seong-Jin, Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof.

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63. Choi, Duck-Kyun, Method of crystallizing amorphous silicon thin film and method of fabricating polysilicon thin film transistor using the crystallization method.

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64. Jang Jin,KRX ; Yoon Soo-Young,KRX ; Oh Jae-Young,KRX, Method of crystallizing an amorphous film.

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65. Jang Jin,KRX ; Yoon Soo Young,KRX ; Kim Hyun Churl,KRX, Method of crystallizing an amorphous silicon layer.

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66. Hameed A. Naseem ; M. Shahidul Haque ; William D. Brown, Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells.

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67. Naseem, Hameed A.; Haque, M. Shahidul; Brown, William D., Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells.

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68. Naseem, Hameed A.; Haque, M. Shahidul; Brown, William D., Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells.

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69. Yasuhiko Takemura JP, Method of fabricating a semiconductor device.

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70. Fukunaga,Takeshi; Ohtani,Hisashi; Miyanaga,Akiharu, Method of fabricating a semiconductor device utilizing a catalyst material solution.

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71. Nakajima,Setsuo; Ohtani,Hisashi, Method of fabricating semiconductor device.

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72. Yamazaki Shunpei,JPX ; Kusumoto Naoto,JPX ; Teramoto Satoshi,JPX, Method of fabricating semiconductor device.

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73. Tanaka,Koichiro; Miyairi,Hidekazu; Shoji,Hironobu, Method of fabricating semiconductor device utilizing laser irradiation.

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74. Joo Seung-Ki,KRX ; Kim Tae-Kyung,KRX, Method of fabricating thin film transistor.

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75. Joo, Seung-Ki; Kim, Tae-Kyung, Method of fabricating thin film transistor.

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76. Nakajima, Setsuo; Ohtani, Hisashi, Method of forming a semiconductor device using a group XV element for gettering by means of infrared light.

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77. Ohtani, Hisashi, Method of forming crystalline silicon film.

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78. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX, Method of gettering crystallization catalyst for forming a silicon film.

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79. Yamazaki,Shunpei; Kusumoto,Naoto; Tanaka,Koichiro, Method of laser annealing using linear beam having quasi-trapezoidal energy profile for increased depth of focus.

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80. Shunpei Yamazaki JP; Mitsunori Sakama JP; Yasuhiko Takemura JP, Method of making crystal silicon semiconductor and thin film transistor.

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81. Hisashi Ohtani JP; Akiharu Miyanaga JP; Junichi Takeyama JP, Method of manufacturing a semiconductor device.

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82. Isobe,Atsuo; Arao,Tatsuya, Method of manufacturing a semiconductor device.

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83. Ohnuma, Hideto; Yamazaki, Shunpei; Nakajima, Setsuo; Ohtani, Hisashi, Method of manufacturing a semiconductor device.

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84. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Method of manufacturing a semiconductor device.

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85. Yamazaki, Shunpei; Nakamura, Osama; Kajiwara, Masayuki; Koezuka, Junichi; Dairiki, Koji; Mitsuki, Toru; Takayama, Toru; Ohnuma, Hideto; Asami, Taketomi; Ichijo, Mitsuhiro, Method of manufacturing a semiconductor device.

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86. Yamazaki, Shunpei; Nakamura, Osamu; Kajiwara, Masayuki; Koezuka, Junichi; Dairiki, Koji; Mitsuki, Toru; Takayama, Toru; Ohnuma, Hideto; Asami, Taketomi; Ichijo, Mitsuhiro, Method of manufacturing a semiconductor device.

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87. Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Dairiki,Koji; Mitsuki,Toru; Takayama,Toru; Ohnuma,Hideto; Asami,Taketomi; Ichijo,Mitsuhiro, Method of manufacturing a semiconductor device.

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88. Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Dairiki,Koji; Mitsuki,Toru; Takayama,Toru; Ohnuma,Hideto; Asami,Taketomi; Ichijo,Mitsuhiro, Method of manufacturing a semiconductor device.

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89. Yamazaki,Shunpei; Ohnuma,Hideto; Dairiki,Koji; Mitsuki,Toru; Takayama,Toru; Akimoto,Kengo, Method of manufacturing a semiconductor device.

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90. Yamazaki,Shunpei; Ohtani,Hisashi; Hamatani,Toshiji, Method of manufacturing a semiconductor device.

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91. Hamada,Takashi; Murakami,Satoshi; Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Takayama,Toru, Method of manufacturing a semiconductor device comprising doping steps using gate electrodes and resists as masks.

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92. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Method of manufacturing a semiconductor device including reduction of a catalyst.

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93. Isobe, Atsuo; Arao, Tatsuya, Method of manufacturing a semiconductor device, utilizing a laser beam for crystallization.

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94. Shunpei Yamazaki JP, Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device.

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95. Yamazaki, Shunpei, Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device.

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96. Yamazaki,Shunpei, Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device by transferring crystallization promoting material in the first semiconductor film to the second semico.

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97. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Method of manufacturing a thin film transistor device.

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98. Ohtani Hisashi,JPX, Method of manufacturing a thin film transistor involving laser treatment.

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99. Murley, Darren T.; Trainor, Michael J., Method of manufacturing a transistor.

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100. Isobe, Atsuo; Saito, Satoru; Fujikawa, Saishi, Method of manufacturing semiconductor device.

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101. Maekawa,Shinji, Method of manufacturing semiconductor device.

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102. Nakamura, Osamu; Yamazaki, Shunpei; Dairiki, Koji; Kajiwara, Masayuki; Koezuka, Junichi; Murakami, Satoshi, Method of manufacturing semiconductor device.

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103. Nakamura, Osamu; Yamazaki, Shunpei; Dairiki, Koji; Kajiwara, Masayuki; Koezuka, Junichi; Murakami, Satoshi, Method of manufacturing semiconductor device.

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104. Nakamura,Osamu; Yamazaki,Shunpei; Dairiki,Koji; Kajiwara,Masayuki; Koezuka,Junichi; Murakami,Satoshi, Method of manufacturing semiconductor device.

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105. Ohtani Hisashi,JPX, Method of manufacturing semiconductor device.

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106. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Miyanaga Akiharu,JPX, Method of manufacturing semiconductor device.

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107. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Miyanaga Akiharu,JPX, Method of manufacturing semiconductor device.

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108. Yamazaki, Shunpei; Ohtani, Hisashi, Method of manufacturing semiconductor device.

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109. Yamazaki,Shunpei; Mitsuki,Toru, Method of manufacturing semiconductor device.

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110. Yamazaki, Shunpei; Nakamura, Osamu; Kajiwara, Masayuki; Koezuka, Junichi, Method of manufacturing semiconductor device and semiconductor device.

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111. Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi, Method of manufacturing semiconductor device that includes selectively adding a noble gas element.

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112. Yamazaki Shunpei,JPX, Method of manufacturing semiconductor devices using a crystallization promoting material.

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113. Shunpei Yamazaki JP; Hisashi Ohtani JP, Method of producing crystalline semiconductor.

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114. Yamazaki Shunpei,JPX ; Arai Yasuyuki,JPX, Microcrystal silicon film and its manufacturing method, and photoelectric conversion device and its manufacturing method.

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115. Fonash Stephen J. ; Kalkan A. Kaan, Nanostructure tailoring of material properties using controlled crystallization.

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116. Yamazaki, Shunpei; Koyama, Jun; Hayashi, Keisuke, Nonvolatile memory and manufacturing method thereof.

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117. Yamazaki Shunpei,JPX, Photoelectric conversion device and method manufacturing same.

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118. Kuo Yue, Polysilicon grown by pulsed rapid thermal annealing.

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119. Seong Moh Seo KR, Polysilicon thin film transistor and method of manufacturing the same.

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120. Ohtani Hisashi,JPX ; Adachi Hiroki,JPX, Process for crystallizing an amorphous silicon film and apparatus for fabricating the same.

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121. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Process for fabricating a thin film transistor semiconductor device.

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122. Ohtani Hisashi,JPX ; Fukunaga Takeshi,JPX ; Miyanaga Akiharu,JPX, Process for fabricating semiconductor device.

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123. Ohtani Hisashi,JPX ; Fukunaga Takeshi,JPX ; Miyanaga Akiharu,JPX, Process for fabricating semiconductor device.

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124. Ohtani Hisashi,JPX ; Fukunaga Takeshi,JPX ; Miyanaga Akiharu,JPX, Process for fabricating semiconductor device.

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125. Ohtani, Hisashi; Fukunaga, Takeshi; Miyanaga, Akiharu, Process for fabricating semiconductor device.

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126. Ohtani, Hisashi; Fukunaga, Takeshi; Miyanaga, Akiharu, Process for fabricating semiconductor device.

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127. Ohtani,Hisashi; Fukunaga,Takeshi; Miyanaga,Akiharu, Process for fabricating semiconductor device.

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128. Ohtani, Hisashi; Fukunaga, Takeshi; Miyanaga, Akiharu, Process for fabricating thin film transistors.

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129. Yamazaki,Shunpei; Ohtani,Hisashi; Mitsuki,Toru; Ohnuma,Hideto; Takano,Tamae; Kasahara,Kenji; Dairiki,Koji, Process for manufacturing a semiconductor device.

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130. Yamazaki,Shunpei; Ohtani,Hisashi; Mitsuki,Toru; Ohnuma,Hideto; Takano,Tamae; Kasahara,Kenji; Dairiki,Koji, Process for manufacturing a semiconductor device.

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131. Wolfgang Arndt DE; Klaus Graff DE; Alfons Hamberger DE; Petra Heim DE, Process for manufacturing a silicon semiconductor device having a reduced surface recombination velocity.

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132. Ahn, Byung-Tae; Kim, Do-Kyung; Kim, Jong-Hee; Lee, Jeong-No; Kim, Yoon-Chang, Process for preparing a polycrystalline silicon thin film.

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133. Yamazaki,Shunpei; Arai,Yasuyuki, Process for producing a photoelectric conversion device that includes using a gettering process.

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134. Arndt Wolfgang,DEX ; Graff Klaus,DEX ; Hamberger Alfons,DEX ; Heim Petra,DEX, Process for reducing the surface recombination speed in silicon.

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135. Yamazaki,Shunpei; Koyama,Jun; Kitakado,Hidehito, Process of fabricating a semiconductor device.

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136. Maekawa Masashi, Selective silicide thin-film transistor and method for same.

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137. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor active region of TFTs having radial crystal grains through the whole area of the region.

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138. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Shunpei Yamazaki JP; Yasuhiko Takemura JP, Semiconductor and process for fabricating the same.

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139. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Semiconductor and process for fabricating the same.

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140. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko, Semiconductor circuit and method of fabricating the same.

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141. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Semiconductor circuit for electro-optical device and method of manufacturing the same.

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142. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device.

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143. Yamazaki Shunpei,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and a method of manufacturing the same.

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144. Hisashi Ohtani JP; Tamae Takano JP; Chiho Kokubo JP, Semiconductor device and fabricating method thereof.

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145. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Semiconductor device and fabrication method thereof.

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146. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Semiconductor device and fabrication method thereof.

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147. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki, Semiconductor device and fabrication method thereof.

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148. Shunpei Yamazaki JP, Semiconductor device and its manufacturing method.

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149. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP; Hisashi Ohtani JP; Toshiji Hamatani JP, Semiconductor device and its manufacturing method.

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150. Yamazaki Shunpei,JPX, Semiconductor device and its manufacturing method.

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151. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.

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152. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.

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153. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and its manufacturing method.

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154. Nakamura, Osamu; Kajiwara, Masayuki; Yamazaki, Shunpei; Ohnuma, Hideto, Semiconductor device and manufacturing method of the same.

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155. Nakamura,Osamu; Kajiwara,Masayuki; Yamazaki,Shunpei; Ohnuma,Hideto, Semiconductor device and manufacturing method of the same.

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156. Moriwaka, Tomoaki, Semiconductor device and manufacturing method thereof.

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157. Moriwaka, Tomoaki, Semiconductor device and manufacturing method thereof.

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158. Ohnuma, Hideto; Sakakura, Masayuki; Mitani, Yasuhiro; Matsuo, Takuya; Kitakado, Hidehito, Semiconductor device and manufacturing method thereof.

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159. Ohnuma,Hideto; Sakakura,Masayuki; Mitani,Yasuhiro; Matsuo,Takuya; Kitakado,Hidehito, Semiconductor device and manufacturing method thereof.

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160. Shunpei Yamazaki JP; Hisashi Ohtani JP; Hideto Ohnuma JP; Satoshi Teramoto JP, Semiconductor device and manufacturing method thereof.

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161. Tanaka, Koichiro; Ohnuma, Hideto, Semiconductor device and manufacturing method thereof.

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162. Zhang, Hongyong, Semiconductor device and manufacturing method thereof.

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163. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Semiconductor device and method for fabricating the same.

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164. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.

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165. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.

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166. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method for fabricating the same.

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167. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX, Semiconductor device and method for forming the same.

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168. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.

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169. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.

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170. Shoji,Hironobu; Shimomura,Akihisa; Koyama,Masaki, Semiconductor device and method for manufacturing semiconductor device.

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171. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.

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172. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.

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173. Hiroki Adachi JP; Akira Takenouchi JP; Takeshi Fukada JP; Hiroshi Uehara JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.

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174. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Takeshi Fukunaga JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.

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175. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.

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176. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.

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177. Miyanaga,Akiharu; Ohtani,Hisashi; Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.

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178. Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Yamazaki,Shunpei; Kuwabara,Hideaki, Semiconductor device and method for manufacturing the same.

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179. Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.

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180. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.

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181. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.

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182. Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.

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183. Takemura,Yasuhiro, Semiconductor device and method for manufacturing the same.

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184. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Fukunaga Takeshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.

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185. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.

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186. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.

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187. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device and method for producing it.

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188. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.

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189. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.

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190. Yamazaki Shunpei,JPX, Semiconductor device and method of fabricating same.

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191. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method of fabricating same.

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192. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.

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193. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.

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194. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.

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195. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method of fabricating same.

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196. Takemura, Yasuhiko, Semiconductor device and method of fabricating the same.

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197. Takemura,Yasuhiko, Semiconductor device and method of fabricating the same.

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198. Hamada, Takashi; Murakami, Satoshi; Yamazaki, Shunpei; Nakamura, Osamu; Kajiwara, Masayuki; Koezuka, Junichi; Takayama, Toru, Semiconductor device and method of manufacturing the same.

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199. Hamada,Takashi; Murakami,Satoshi; Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Takayama,Toru, Semiconductor device and method of manufacturing the same.

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200. Hideto Ohnuma JP; Tosiyuki Agui JP; Akiko Shiba JP, Semiconductor device and method of manufacturing the same.

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201. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method of manufacturing the same.

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202. Nakazawa, Misako; Ichijo, Mitsuhiro; Hamatani, Toshiji; Ohnuma, Hideto; Makita, Naoki, Semiconductor device and method of manufacturing the same.

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203. Ohnuma Hideto,JPX ; Agui ; deceased Tosiyuki,JPXITX by Kouzi Agui ; administrator ; Shiba Akiko,JPX, Semiconductor device and method of manufacturing the same.

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204. Shunpei Yamazaki JP, Semiconductor device and method of manufacturing the same.

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205. Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.

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206. Yoshimoto,Satoshi, Semiconductor device and method of manufacturing the same.

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207. Yoshimoto,Satoshi, Semiconductor device and method of manufacturing the same.

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208. Zhang Hongyong,JPX, Semiconductor device and method of manufacturing the same.

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209. Zhang Hongyong,JPX, Semiconductor device and method of manufacturing the same.

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210. Zhang, Hongyong, Semiconductor device and method of manufacturing the same.

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211. Zhang,Hongyong, Semiconductor device and method of manufacturing the same.

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212. Takemura, Yasuhiko; Adachi, Hiroki, Semiconductor device and process for fabricating the same.

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213. Takemura, Yasuhiko; Adachi, Hiroki, Semiconductor device and process for fabricating the same.

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214. Takemura,Yasuhiko; Adachi,Hiroki, Semiconductor device and process for fabricating the same.

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215. Shunpei Yamazaki JP; Naoaki Yamaguchi JP; Setsuo Nakajima JP, Semiconductor device comprising a bottom gate type thin film transistor.

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216. Ohtani, Hisashi; Adachi, Hiroki; Miyanaga, Akiharu; Takayama, Toru, Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film.

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217. Hongyong Zhang JP; Toru Takayama JP; Yasuhiko Takemura JP; Akiharu Miyanaga JP; Hisashi Ohtani JP, Semiconductor device forming method.

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218. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Semiconductor device forming method.

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219. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi, Semiconductor device forming method.

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220. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor device having a catalyst enhanced crystallized layer.

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221. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device having a crystalline semiconductor film.

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222. Zhang, Hongyong; Takayama, Toru, Semiconductor device having channel formation region comprising silicon and containing a group IV element.

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223. Zhang Hongyong,JPX, Semiconductor device having improved crystal orientation.

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224. Zhang Hongyong,JPX, Semiconductor device having improved crystal orientation.

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225. Koyama,Jun; Ohnuma,Hideto; Shionoiri,Yutaka; Nagao,Shou, Semiconductor device having pixels.

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226. Ohtani, Hisashi; Takano, Tamae; Kokubo, Chiho, Semiconductor device method of manufacturing.

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227. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi, Semiconductor device structure.

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228. Yamazaki, Shunpei, Semiconductor device with heat-resistant gate.

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229. Kasahara,Kenji; Kawasaki,Ritsuko; Ohtani,Hisashi; Yamazaki,Shunpei, Semiconductor device, manufacturing method thereof, and electronic device.

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230. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Miyanaga, Akiharu, Semiconductor film having a single-crystal like region with no grain boundary.

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231. Hamaoka,Osamu; Nakatsu,Hiroshi; Ichikawa,Hideki, Semiconductor laser device.

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232. Shunpei Yamazaki JP; Akiharu Miyanaga JP; Jun Koyama JP; Takeshi Fukunaga JP, Semiconductor thin film and its manufacturing method and semiconductor device and its manufacturing method.

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233. Yamazaki, Shunpei; Miyanaga, Akiharu; Koyama, Jun; Fukunaga, Takeshi, Semiconductor thin film and its manufacturing method and semiconductor device and its manufacturing method.

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234. Yamazaki, Shunpei; Miyanaga, Akiharu; Koyama, Jun; Fukunaga, Takeshi, Semiconductor thin film and its manufacturing method and semiconductor device and its manufacturing method.

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235. Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.

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236. Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.

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237. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.

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238. Ohtani Hisashi,JPX ; Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Miyanaga Akiharu,JPX, Semiconductor thin film and semiconductor device.

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239. Shunpei Yamazaki JP; Hisashi Ohtani JP; Toru Mitsuki JP; Akiharu Miyanaga JP; Yasushi Ogata JP, Semiconductor thin film and semiconductor device.

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240. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Mitsuki Toru,JPX ; Miyanaga Akiharu,JPX ; Ogata Yasushi,JPX, Semiconductor thin film and semiconductor device.

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241. Yamazaki, Shunpei; Ohtani, Hisashi; Mitsuki, Toru; Miyanaga, Akiharu; Ogata, Yasushi, Semiconductor thin film and semiconductor device.

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242. Yamazaki, Shunpei; Ohtani, Hisashi; Mitsuki, Toru; Miyanaga, Akiharu; Ogata, Yasushi, Semiconductor thin film and semiconductor device.

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243. Yamazaki, Shunpei; Ohtani, Hisashi; Mitsuki, Toru; Miyanaga, Akiharu; Ogata, Yasushi, Semiconductor thin film and semiconductor device.

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244. Yamazaki,Shunpei; Ohtani,Hisashi; Mitsuki,Toru; Miyanaga,Akiharu; Ogata,Yasushi, Semiconductor thin film and semiconductor device.

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245. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Miyanaga Akiharu,JPX ; Fukunaga Takeshi,JPX, Semiconductor thin film, semiconductor device and manufacturing method thereof.

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246. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film, semiconductor device and manufacturing method thereof.

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247. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film, semiconductor device and manufacturing method thereof.

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248. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor, semiconductor device, and method for fabricating the same.

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249. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor, semiconductor device, and method for fabricating the same.

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250. Yamazaki,Shunpei; Takemura,Yasuhiko; Zhang,Hongyong; Takayama,Toru; Uochi,Hideki, Semiconductor, semiconductor device, and method for fabricating the same.

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251. Koyama, Jun; Osame, Mitsuaki; Ogata, Yasushi, Signal dividing circuit and semiconductor device.

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252. Koyama,Jun; Osame,Mitsuaki; Ogata,Yasushi, Signal dividing circuit and semiconductor device.

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253. Yamazaki,Shunpei; Miyanaga,Akiharu; Koyama,Jun; Fukunaga,Takeshi, Static random access memory using thin film transistors.

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254. Yamazaki, Shunpei; Miyanaga, Akiharu; Koyama, Jun; Fukunaga, Takeshi, Thin film semiconductor device and its manufacturing method.

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255. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Thin film transistor having grain boundaries with segregated oxygen and halogen elements.

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256. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.

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257. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.

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258. Yamazaki, Shunpei; Teramoto, Satoshi, Thin film type monolithic semiconductor device.

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259. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Thin-film transistor and fabrication method for same.

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260. Ohnuma Hideto,JPX ; Yamazaki Shunpei,JPX, Thin-film transistor and semiconductor device using thin-film transistors.

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261. Ohnuma, Hideto; Yamazaki, Shunpei, Thin-film transistor and semiconductor device using thin-film transistors.

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262. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Transistor and semiconductor device having columnar crystals.

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263. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko; Miyanaga, Akiharu; Ohtani, Hisashi, Transistor and semiconductor device having columnar crystals.

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264. Nanba Norihiro,JPX, Zoom lens and optical apparatus having the same.

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