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Method of making a transistor having easily controllable impurity profile 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/20
출원번호 US-0242147 (1994-05-13)
우선권정보 JP-0324799 (1990-11-27)
발명자 / 주소
  • Koh Risho (Tokyo JPX)
출원인 / 주소
  • NEC Corporation (JPX 03)
인용정보 피인용 횟수 : 150  인용 특허 : 0

초록 ▼

On the substrate of an integrated circuit chip is deposited a first insulating layer in which a low resistivity semiconductor region is subsequently formed. An insulating film is formed on a side wall of the low resistivity semiconductor region. A slit is formed in the first insulating layer so that

대표청구항 ▼

A method of fabricating a transistor, comprising the steps of: providing a substrate of a first conductivity type; forming a first insulating layer on the substrate; forming a conductive region on the first insulating layer; forming a second insulating layer on the conductive region: successively re

이 특허를 인용한 특허 (150)

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