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Method for forming capped copper electrical interconnects 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C25D-005/02
  • H01L-021/288
출원번호 US-0440413 (1995-05-12)
발명자 / 주소
  • Farooq Mukta S. (Hopewell Junction NY) Kaja Suryanarayana (Hopewell Junction NY) Perfecto Eric D. (Poughkeepsie NY) White George E. (Hoffman Estates IL)
출원인 / 주소
  • International Business Machines Corporation (Armonk NY 02)
인용정보 피인용 횟수 : 64  인용 특허 : 0

초록

The present invention relates generally to a new structure and method for capped copper electrical interconnects. More particularly, the invention encompasses a novel structure in which one or more of the copper electrical interconnects within a semiconductor substrate are capped to obtain a robust

대표청구항

A method of making capped electrical interconnect comprising the steps of: (a) depositing at least one seed layer on a substrate, (b) depositing at least one resist layer over said at least one seed layer, (c) exposing and developing said at least one resist layer so as to define at least one openin

이 특허를 인용한 특허 (64)

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  2. Cohen, Uri, Advanced seed layers for interconnects.
  3. Cohen,Uri, Advanced seed layery for metallic interconnects.
  4. Chen,Linlin; Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Ritzdorf,Thomas L., Apparatus and method for electrochemically depositing metal on a semiconductor workpiece.
  5. Chen,Linlin; Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Ritzdorf,Thomas L., Apparatus and method for electrochemically depositing metal on a semiconductor workpiece.
  6. Chen LinLin, Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece.
  7. Chen, LinLin, Apparatus and method for electrolytically depositing a metal on a workpiece.
  8. Chen LinLin, Apparatus and method for electrolytically depositing copper on a semiconductor workpiece.
  9. Chen, Linlin, Apparatus and method for electrolytically depositing copper on a semiconductor workpiece.
  10. Chen, Linlin; Taylor, Thomas, Apparatus and method for electrolytically depositing copper on a semiconductor workpiece.
  11. Chen, Linlin; Taylor, Thomas, Apparatus and method for electrolytically depositing copper on a semiconductor workpiece.
  12. Chen, LinLin, Apparatus and method for electrolytically depositing copper on a workpiece.
  13. Peace, Steven L., Apparatus and method for regulating fluid flows, such as flows of electrochemical processing fluids.
  14. Hanson,Kyle M., Apparatus and methods for electrochemical processing of microelectronic workpieces.
  15. Hanson,Kyle M.; Ritzdorf,Thomas L.; Wilson,Gregory J.; McHugh,Paul R., Apparatus and methods for electrochemical processing of microelectronic workpieces.
  16. Hanson,Kyle M.; Ritzdorf,Thomas L.; Wilson,Gregory J.; McHugh,Paul R., Apparatus and methods for electrochemical processing of microelectronic workpieces.
  17. Cohen, Uri, Apparatus for depositing seed layers.
  18. Robert W. Batz, Jr. ; Scot Conrady ; Thomas L. Ritzdorf, Apparatus for high deposition rate solder electroplating on a microelectronic workpiece.
  19. Cohen, Uri, Apparatus for making interconnect seed layers and products.
  20. O'Brien,Kevin P.; Brask,Justin K., Capping of copper structures in hydrophobic ILD using aqueous electro-less bath.
  21. Yakobson,Eric; Hurtubise,Richard; Witt,Christian; Chen,Qingyun, Capping of metal interconnects in integrated circuit electronic devices.
  22. Yakobson,Eric; Hurtubise,Richard; Witt,Christian; Chen,Qingyun, Capping of metal interconnects in integrated circuit electronic devices.
  23. Hanson, Kyle M.; Klocke, John L., Chambers, systems, and methods for electrochemically processing microfeature workpieces.
  24. Klocke,John; Hanson,Kyle M, Chambers, systems, and methods for electrochemically processing microfeature workpieces.
  25. Klocke,John; Hanson,Kyle M, Chambers, systems, and methods for electrochemically processing microfeature workpieces.
  26. Daniel Charles Edelstein ; James McKell Edwin Harper ; Chao-Kun Hu ; Andrew H. Simon ; Cyprian Emeka Uzoh, Copper interconnection structure incorporating a metal seed layer.
  27. Edelstein Daniel Charles ; Harper James McKell Edwin ; Hu Chao-Kun ; Simon Andrew H. ; Uzoh Cyprian Emeka, Copper interconnection structure incorporating a metal seed layer.
  28. Woodruff,Daniel J.; Hanson,Kyle M., Electroplating apparatus with segmented anode array.
  29. Woodruff,Daniel J.; Hanson,Kyle M., Electroplating apparatus with segmented anode array.
  30. Kevin S. Petrarca ; Donald Canaperi ; Mahadevaiyer Krishnan ; Kenneth Jay Stein ; Richard P. Volant, Encapsulated metal structures for semiconductor devices and MIM capacitors including the same.
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  32. Petrarca, Kevin S.; Canaperi, Donald; Krishnan, Mahadevaiyer; Stein, Kenneth Jay; Volant, Richard P., Encapsulated metal structures for semiconductor devices and MIM capacitors including the same.
  33. Yang, Chih-Chao; Horak, David V.; Koburger, Charles W.; Ponoth, Shom, Integrated circuit structure having selectively formed metal cap.
  34. Cohen, Uri, Metallic interconnects products.
  35. Farnworth, Warren M.; Duesman, Kevin G., Method and apparatus for electrolytic plating of surface metals.
  36. Chen, Linlin; Wilson, Gregory J.; McHugh, Paul R.; Weaver, Robert A.; Ritzdorf, Thomas L., Method for electrochemically depositing metal on a semiconductor workpiece.
  37. Chen Linlin, Method for electrolytically depositing copper on a semiconductor workpiece.
  38. Ritzdorf, Thomas L.; Graham, Lyndon W., Method for filling recessed micro-structures with metallization in the production of a microelectronic device.
  39. Ritzdorf,Thomas L.; Graham,Lyndon W., Method for filling recessed micro-structures with metallization in the production of a microelectronic device.
  40. Batz, Jr., Robert W.; Conrady, Scot; Ritzdorf, Thomas L., Method for high deposition rate solder electroplating on a microelectronic workpiece.
  41. Hongo, Akihisa; Nagai, Mizuki; Ohno, Kanji; Kimizuka, Ryoichi; Maruyama, Megumi, Method for plating a first layer on a substrate and a second layer on the first layer.
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  43. Ogure, Naoaki; Inoue, Hiroaki, Method of forming embedded copper interconnections and embedded copper interconnection structure.
  44. Chou Min-Chieh,TWX ; Wu Ching-Yi,TWX ; Huang Star Rey-Shing,TWX ; Lin Yuh-Sheng,TWX, Method of manufacturing a planar coil using a transparency substrate.
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  52. Cohen,Uri, Seed layers for metallic interconnects.
  53. Cohen, Uri, Seed layers for metallic interconnects and products.
  54. Richard P. Volant ; Peter S. Locke ; Kevin S. Petrarca ; David M. Rockwell ; Seshadri Subbanna, Selective plating process.
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  57. Hongo, Akihisa; Nagai, Mizuki; Ohno, Kanji; Kimizuka, Ryoichi; Maruyama, Megumi, Substrate plating method and apparatus.
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  59. Wilson, Gregory J.; McHugh, Paul R.; Hanson, Kyle M., System for electrochemically processing a workpiece.
  60. Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Ritzdorf,Thomas L., Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece.
  61. Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Ritzdorf,Thomas L., Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece.
  62. Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Ritzdorf,Thomas L., Turning electrodes used in a reactor for electrochemically processing a microelectronic workpiece.
  63. Wilson, Gregory J.; McHugh, Paul R.; Hanson, Kyle M., Workpiece processor having processing chamber with improved processing fluid flow.
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