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Method for producing crystalline semiconductor film having reduced concentration of catalyst elements for crystallizatio

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/336
  • H01L-021/20
  • H01L-021/265
출원번호 US-0357653 (1994-12-16)
우선권정보 JP-0331626 (1993-12-27); JP-0144967 (1994-06-27)
발명자 / 주소
  • Funai Takashi (Tenri JPX) Makita Naoki (Nara JPX) Yamamoto Yoshitaka (Yamatokoriyama JPX) Morita Tatsuo (Soraku-gun JPX)
출원인 / 주소
  • Sharp Kabushiki Kaisha (Osaka JPX 03)
인용정보 피인용 횟수 : 175  인용 특허 : 0

초록

A method for producing a semiconductor film, includes the steps of: (a) forming an amorphous semiconductor film on a substrate having a surface with an insulating property; (b) introducing a material for accelerating crystallization of the amorphous semiconductor film into at least a part of the amo

대표청구항

A method for producing a semiconductor film, comprising the steps of: (a) forming an amorphous semiconductor film on a substrate having a surface with an insulating property; (b) introducing a material for accelerating crystallization of the amorphous semiconductor film into at least a part of the a

이 특허를 인용한 특허 (175)

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