Semiconductor Energy Laboratory Co., Ltd. (Kanagawa-ken JPX 03)
인용정보
피인용 횟수 :
272인용 특허 :
4
초록▼
A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum
A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.
대표청구항▼
A semiconductor device formed on an insulating surface, said device comprising: a semiconductor island comprising crystalline silicon; source, drain and channel regions formed within said semiconductor island; a gate electrode adjacent to said semiconductor island with a gate insulating film interpo
A semiconductor device formed on an insulating surface, said device comprising: a semiconductor island comprising crystalline silicon; source, drain and channel regions formed within said semiconductor island; a gate electrode adjacent to said semiconductor island with a gate insulating film interposed therebetween, wherein said semiconductor island contains a material selected from the group consisting of nickel, iron, cobalt, ruthenium, rhodium, palladium, osmium, iridium, platinum, scandium, titanium, vanadium, chromium, manganese, copper, zinc, gold and silver at a substantially uniform concentration throughout said semiconductor island.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (4)
Liu Gang (State College PA) Kakkad Ramesh H. (State College PA) Fonash Stephen J. (State College PA), Low temperature crystallization and pattering of amorphous silicon films.
Fonash Stephen J. (State College PA) Liu Gang (Sunnyvale CA), Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates.
Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same.
Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP, Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization.
Zhang Hongyong,JPX ; Yamaguchi Naoaki,JPX ; Takemura Yasuhiko,JPX, Method for operating an active matrix display device with limited variation in threshold voltages.
Kokubo,Chiho; Shiga,Aiko; Tanada,Yoshifumi; Yamazaki,Shunpei, Method of fabricating a semiconductor device utilizing crystallization of semiconductor region with laser beam.
Hamada,Takashi; Murakami,Satoshi; Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Takayama,Toru, Method of manufacturing a semiconductor device comprising doping steps using gate electrodes and resists as masks.
Yamazaki,Shunpei, Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device by transferring crystallization promoting material in the first semiconductor film to the second semico.
Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi, Method of manufacturing semiconductor device that includes selectively adding a noble gas element.
Yamazaki Shunpei,JPX ; Arai Yasuyuki,JPX, Microcrystal silicon film and its manufacturing method, and photoelectric conversion device and its manufacturing method.
Yamazaki,Shunpei; Ohtani,Hisashi; Mitsuki,Toru; Ohnuma,Hideto; Takano,Tamae; Kasahara,Kenji; Dairiki,Koji, Process for manufacturing a semiconductor device.
Yamazaki,Shunpei; Ohtani,Hisashi; Mitsuki,Toru; Ohnuma,Hideto; Takano,Tamae; Kasahara,Kenji; Dairiki,Koji, Process for manufacturing a semiconductor device.
Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor active region of TFTs having radial crystal grains through the whole area of the region.
Hamada,Takashi; Murakami,Satoshi; Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Takayama,Toru, Semiconductor device and method of manufacturing the same.
Ohtani, Hisashi; Adachi, Hiroki; Miyanaga, Akiharu; Takayama, Toru, Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film.
Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device having a crystalline semiconductor film.
Yamazaki, Shunpei; Miyanaga, Akiharu; Mitsuki, Toru; Ohtani, Hisashi, Semiconductor device with a semiconductor layer over a surface having a recess pitch no smaller than 0.3 microns.
Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
Yamazaki,Shunpei; Takemura,Yasuhiko; Zhang,Hongyong; Takayama,Toru; Uochi,Hideki, Semiconductor, semiconductor device, and method for fabricating the same.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.