초록 ▼

In the formation of a thin-film transistor (620) capable of improving the OFF current characteristic, first, all ions (arrow Ion-1) generated from a mixed gas (doping gas) containing 5% PH3 with the remainder being H2 gas are implanted to a polycrystalline silicon film (604) at an approximately 80 k

In the formation of a thin-film transistor (620) capable of improving the OFF current characteristic, first, all ions (arrow Ion-1) generated from a mixed gas (doping gas) containing 5% PH3 with the remainder being H2 gas are implanted to a polycrystalline silicon film (604) at an approximately 80 keV energy level to achieve a P+ion dose in the range from 3×1013/cm2 to 1×1014/cm2 in the process forming low concentration source-drain areas (602, 603). Next, all ions generated from a doping gas of pure hydrogen (arrow Ion-2) are implanted to the low concentration area (604a) at an approximately 20 keV energy level to achieve an H+ion dose from 1×1014/cm2 to 1×1015/cm2. Then, the impurity is activated by heat treatment of the low concentration area (604a) implanted with impurity for approximately one hour at approximately 300°C. in a nitrogen atmosphere.

대표청구항 ▼

An active matrix panel, comprising: a drive circuit area arranged on a surface of an insulated substrate comprising a CMOS circuit comprising a first thin-film transistor of a first conductivity type and a second thin-film transistor of a second conductivity type aid first thin film transistor compr

An active matrix panel, comprising: a drive circuit area arranged on a surface of an insulated substrate comprising a CMOS circuit comprising a first thin-film transistor of a first conductivity type and a second thin-film transistor of a second conductivity type aid first thin film transistor comprises a source-drain area formed self-aligned to a gate electrode and said second thin film transistor comprising a second source-drain area and a pixel area arranged on the surface of said insulated substrate comprising a third thin-film transistor of the first conductivity type comprising a third source-drain area, wherein a concentration peak of an impurity of said third source-drain area of said third thin-film transistor is in a range from 3×1018/cm3 to 1×1019/cm3, and a concentration peak of hydrogen ions is in a range from 6×1018/cm3 to 1×1020/cm3, wherein a concentration peak of impurity contained in said first source-drain area of said first thin-film transistor and said second source drain area second thin-film transistor is at least 1×1020/cm3 or greater.