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Process for plasma enhanced anneal of titanium nitride 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H05H-001/00
출원번호 US-0461665 (1995-06-05)
발명자 / 주소
  • Foster Robert F. (Phoenix AZ) Hillman Joseph T. (Scottsdale AZ) Arora Rikhit (Mesa AZ)
출원인 / 주소
  • Sony Corporation (Tokyo JPX 03) Materials Research Corporation (Park Ridge NJ 02)
인용정보 피인용 횟수 : 34  인용 특허 : 14

초록 ▼

A titanium nitride film is annealed at a temperature less than 500°C. by subjecting said titanium nitride film to an RF created plasma generated from a nitrogen-containing gas in a rotating susceptor reactor. The formed film is comparable to a thin film annealed at significantly higher temperatures,

대표청구항

A method of annealing a titanium nitride film on a substrate comprising contacting a titanium nitride film on a substrate with a plasma formed from a gas selected from the group consisting of ammonia and nitrogen at a temperature less than about 500°C.

이 특허에 인용된 특허 (14)

  1. Rose Alan D. (Wylie TX) Kennedy ; III Robert M. (Taylors SC), Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor.
    상세보기
  2. Sandhu Gurtej S. (Boise ID) Buley Todd W. (Boise ID), Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal, titanium nitride films of.
    상세보기
  3. Aucoin Thomas R. (Ocean NJ) Wittstruck Richard H. (Howell NJ) Zhao Jing (Ellicott MD) Zawadzki Peter A. (Plainfield NJ) Baarck William R. (Fair Haven NJ) Norris Peter E. (Cambridge MA), Method and apparatus for depositing a refractory thin film by chemical vapor deposition.
    상세보기
  4. Kauffman Ralph E. (Boise ID) Prucha Michael J. (Bigfork MT) Beck James (Boise ID) Thakur Randhir P. S. (Boise ID) Martin Annette L. (Boise ID), Method for chemical vapor depositing a titanium nitride layer on a semiconductor wafer and method of annealing tin films.
    상세보기
  5. Foster Robert F. (5002-3 E. Siesta Dr. Phoenix AZ 85044) Hillman Joseph T. (8025 E. McClellan Blvd. Scottsdale AZ 07410), Method for chemical vapor deposition of titanium nitride films at low temperatures.
    상세보기
  6. Akahori Takashi (Hyogo JPX) Tanihara Akira (Kyoto JPX), Method for forming a thin film for a semiconductor device.
    상세보기
  7. Foster Robert F. (Weston MA) Srinivas Damodaran (Tempe AZ), Method of nucleating tungsten on titanium nitride by CVD without silane.
    상세보기
  8. Foster Robert F. (Weston MA) Rebenne Helen E. (Fair Lawn NJ), Methods of chemical vapor deposition (CVD) of tungsten films on patterned wafer substrates.
    상세보기
  9. Nguyen Bich-Yen (Austin TX) Lee Jen-Jiang (Plano TX) Nguyen Hoang K. (Austin TX) Limb Young (Austin TX) Tobin Philip J. (Austin TX), Process for forming high purity thin films.
    상세보기
  10. Vakerlis George (Malden MA) Halverson Ward D. (Cambridge MA) Garg Diwakar (Macungie PA) Dyer Paul N. (Allentown PA), Radio frequency plasma enhanced chemical vapor deposition process and reactor.
    상세보기
  11. Foster Robert F. (Weston MA) Rebenne Helen E. (Fair Lawn NJ) LeBlanc Rene E. (Branford CT) White Carl L. (Gilbert AZ) Arora Rikhit (Mesa AZ), Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD.
    상세보기
  12. Koyanagi Mitsumasa (Higashimurayama JPX) Kaneko Hiroko (Higashimurayama JPX), Semiconductor integrated circuit device and method of producing the same.
    상세보기
  13. Foster Robert F. (Weston MA) Rebenne Helen E. (Fair Lawn NJ) LeBlanc Rene E. (Branford CT) White Carl L. (Gilbert AZ) Arora Rikhit (Mesa AZ), Semiconductor wafer processing method and apparatus with heat and gas flow control.
    상세보기
  14. Yokoyama Natsuki (Mitaka JPX) Homma Yoshio (Tokyo JPX) Hinode Kenji (Hachioji JPX) Mukai Kiichiro (Hachioji JPX), Titanium nitride film in contact hole with large aspect ratio.
    상세보기

이 특허를 인용한 특허 (34)

  1. Shimizu Takaya,JPX ; Hatano Tatsuo,JPX, CVD film forming method including annealing and film forming performed at substantially the same pressure.
    상세보기
  2. Levine Timothy E. ; Chen Ling ; Chang Mei ; Mosely Roderick C. ; Littau Karl A. ; Raaijmakers Ivo, Construction of a tantalum nitride film on a semiconductor wafer.
    상세보기
  3. Derderian,Garo J.; Morrison,Gordon, Deposition system to provide preheating of chemical vapor deposition precursors.
    상세보기
  4. Wang Chein-Cheng,TWX ; Chang Shih-Chanh,TWX, Fabricating method of glue layer and barrier layer.
    상세보기
  5. Salvador P. Umotoy ; Steve H. Chiao ; Anh N. Nguyen ; Be V. Vo ; Joel Huston ; James J. Chen ; Lawrence Chung-Lai Lei, High temperature chemical vapor deposition chamber.
    상세보기
  6. Futase, Takuya, Manufacturing method of semiconductor device including filling a connecting hole with metal film.
    상세보기
  7. Danek, Michal; Liao, Marvin; Englhardt, Eric; Chang, Mei; Kao, Yeh-Jen; DuBois, Dale R.; Morrison, Alan F., Method for constructing a film on a semiconductor wafer.
    상세보기
  8. Lo,Yi Jen; Buerke,Axel; Schmidbauer,Sven; Lin,Chiang Hung, Method for controlling a thickness of a first layer and method for adjusting the thickness of different first layers.
    상세보기
  9. Ohshita Yoshio,JPX, Method for forming a barrier metal layer made of titanium nitride on a silicon substrate.
    상세보기
  10. Chou, Jing-Pei; Kao, Chien-Teh; Lai, Chiukin; Mosely, Roderick C.; Chang, Mei, Method of TiSiN deposition using a chemical vapor deposition (CVD) process.
    상세보기
  11. Fiordalice Robert ; Garcia Sam ; Ong T. P., Method of decreasing resistivity in an electrically conductive layer.
    상세보기
  12. Sujit Sharan ; Gurtej S. Sandhu, Method of forming a titanium comprising layer and method of forming a conductive silicide contact.
    상세보기
  13. Sharan Sujit ; Sandhu Gurtej S., Method of forming an electrical contact to a silicon substrate.
    상세보기
  14. Sharan Sujit ; Sandhu Gurtej S., Method of forming an electrical contact to a silicon substrate.
    상세보기
  15. Ho Wen-Yu,TWX ; Lee Sen-Nan,TWX ; Hsieh Sung Chun,TWX ; Chen Hui-Lun,TWX, Method of forming barrier layer for tungsten plugs in interlayer dielectrics.
    상세보기
  16. Ameen Michael S. ; Hillman Joseph T., Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level appl.
    상세보기
  17. Ameen, Michael S.; Hillman, Joseph T.; Leusink, Gert; Ward, Michael; Yasar, Tugrul, Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus.
    상세보기
  18. Chen Fufa ; Lin Yin ; Hu Jianhua ; Wu Frederick ; Xi Ming ; Wu Li, Method of performing titanium/titanium nitride integration.
    상세보기
  19. Gurtej S. Sandhu, Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds.
    상세보기
  20. Sandhu Gurtej S., Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds.
    상세보기
  21. Sandhu Gurtej S., Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds.
    상세보기
  22. Sandhu, Gurtej S., Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds.
    상세보기
  23. Dobson Christopher David,GBX, Method of removing surface oxides found on a titanium oxynitride layer using a nitrogen containing plasma.
    상세보기
  24. Hower Glen Roy ; Kostelnick Daniel David ; Shih Yih-Cheng,TWX, Method of treating metal nitride films to reduce silicon migration therein.
    상세보기
  25. Liu, Chung-Shi; Shue, Shau-Lin; Yu, Chen-Hua, Method to improve reliability of multilayer structures of FSG (F-doped SiO2) dielectric layers and aluminum-copper-TiN layers in integrated circuits.
    상세보기
  26. Dobson Christopher David,GBX ; Harris Mark Graeme Martin,GBX ; Buchanan Keith Edward,GBX, Methods of forming a barrier layer.
    상세보기
  27. Shue Shaulin,TWX ; Yu Chen-Hua,TWX, Multi-step plasma treatment process for forming low resistance titanium nitride layer.
    상세보기
  28. Agarwal,Vishnu K., Photo-assisted method for semiconductor fabrication.
    상세보기
  29. Wang, Shulin; Xi, Ming; Lando, Zvi; Chang, Mei, Plasma treatment of a titanium nitride film formed by chemical vapor deposition.
    상세보기
  30. Wakabayashi, Satoshi; Hasegawa, Toshio, Precoat film forming method.
    상세보기
  31. Derderian,Garo J.; Morrison,Gordon, Preheating of chemical vapor deposition precursors.
    상세보기
  32. Garo J. Derderian ; Gordon Morrison, Preheating of chemical vapor deposition precursors.
    상세보기
  33. Derderian Garo J. ; Sandhu Gurtej S., Semiconductor processing method of making electrical contact to a node.
    상세보기
  34. Derderian Garo J. ; Sandhu Gurtej S., Semiconductor processing method of making electrical contact to a node.
    상세보기

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