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Method of manufacturing multiple polysilicon TFTs with varying degrees of crystallinity 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/84
출원번호 US-0207185 (1994-03-08)
우선권정보 JP-0079004 (1993-03-12); JP-0079005 (1993-03-12)
발명자 / 주소
  • Zhang Hongyong (Kanagawa JPX) Takayama Toru (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX)
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd. (Kanagawa-ken JPX 03)
인용정보 피인용 횟수 : 319  인용 특허 : 0

초록 ▼

Method of fabricating a semiconductor circuit is initiated with formation of an amorphous silicon film. Then, a second layer containing at least one catalytic element is so formed as to be in intimate contact with the amorphous silicon film, or the catalytic element is introduced into the amorphous

대표청구항 ▼

A method of fabricating a semiconductor circuit comprising the steps of: forming a semiconductor film comprising silicon over an insulating surface of a substrate, said film having a first portion and second portion and a surface; selectively forming a substance containing at least one catalytic ele

이 특허를 인용한 특허 (319)

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  2. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
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  3. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
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  4. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
    상세보기
  5. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
    상세보기
  6. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
    상세보기
  7. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
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  8. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
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  9. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
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  10. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
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  11. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
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  126. Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Dairiki,Koji; Mitsuki,Toru; Takayama,Toru; Ohnuma,Hideto; Asami,Taketomi; Ichijo,Mitsuhiro, Method of manufacturing a semiconductor device.
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  127. Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Dairiki,Koji; Mitsuki,Toru; Takayama,Toru; Ohnuma,Hideto; Asami,Taketomi; Ichijo,Mitsuhiro, Method of manufacturing a semiconductor device.
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  128. Yamazaki,Shunpei; Ohnuma,Hideto; Dairiki,Koji; Mitsuki,Toru; Takayama,Toru; Akimoto,Kengo, Method of manufacturing a semiconductor device.
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  129. Yamazaki,Shunpei; Ohtani,Hisashi; Hamatani,Toshiji, Method of manufacturing a semiconductor device.
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  130. Hamada,Takashi; Murakami,Satoshi; Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Takayama,Toru, Method of manufacturing a semiconductor device comprising doping steps using gate electrodes and resists as masks.
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  131. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Method of manufacturing a semiconductor device including reduction of a catalyst.
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  132. Maekawa,Shinji, Method of manufacturing a semiconductor device that includes forming a material with a high tensile stress in contact with a semiconductor film to getter impurities from the semiconductor film.
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  133. Yamazaki,Shunpei; Shibata,Hiroshi; Tanaka,Koichiro; Hiroki,Masaaki; Akiba,Mai, Method of manufacturing a semiconductor device that includes patterning sub-islands.
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  134. Isobe, Atsuo; Arao, Tatsuya, Method of manufacturing a semiconductor device, utilizing a laser beam for crystallization.
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  135. Shunpei Yamazaki JP, Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device.
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  136. Yamazaki, Shunpei, Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device.
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  137. Yamazaki,Shunpei, Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device by transferring crystallization promoting material in the first semiconductor film to the second semico.
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  138. Yamazaki,Shunpei; Mitsuki,Toru; Takano,Tamae, Method of manufacturing a semiconductor film with little warp.
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  139. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Method of manufacturing a thin film transistor device.
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  140. Ohtani Hisashi,JPX, Method of manufacturing a thin film transistor involving laser treatment.
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  141. Nakamura, Osamu; Yamazaki, Shunpei; Dairiki, Koji; Kajiwara, Masayuki; Koezuka, Junichi; Murakami, Satoshi, Method of manufacturing semiconductor device.
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  142. Nakamura, Osamu; Yamazaki, Shunpei; Dairiki, Koji; Kajiwara, Masayuki; Koezuka, Junichi; Murakami, Satoshi, Method of manufacturing semiconductor device.
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  143. Nakamura,Osamu; Yamazaki,Shunpei; Dairiki,Koji; Kajiwara,Masayuki; Koezuka,Junichi; Murakami,Satoshi, Method of manufacturing semiconductor device.
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  144. Ohtani Hisashi,JPX, Method of manufacturing semiconductor device.
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  145. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Miyanaga Akiharu,JPX, Method of manufacturing semiconductor device.
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  146. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Miyanaga Akiharu,JPX, Method of manufacturing semiconductor device.
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  147. Yamazaki,Shunpei; Mitsuki,Toru, Method of manufacturing semiconductor device.
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  148. Yamazaki, Shunpei; Nakamura, Osamu; Kajiwara, Masayuki; Koezuka, Junichi, Method of manufacturing semiconductor device and semiconductor device.
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  149. Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi, Method of manufacturing semiconductor device that includes selectively adding a noble gas element.
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  150. Yamazaki Shunpei,JPX, Method of manufacturing semiconductor devices using a crystallization promoting material.
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  151. Noguchi, Takashi; Xianyu, Wenxu; Cho, Hans S.; Yin, Huaxiang, Method of manufacturing thin film transistor.
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  152. Shunpei Yamazaki JP; Hisashi Ohtani JP, Method of producing crystalline semiconductor.
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  153. Yamazaki Shunpei,JPX ; Arai Yasuyuki,JPX, Microcrystal silicon film and its manufacturing method, and photoelectric conversion device and its manufacturing method.
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  154. Albert, Jonathan D.; Gates, Holly G., Microencapsulated electrophoretic display with integrated driver.
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  155. Albert,Jonathan D.; Gates,Holly G., Microencapsulated electrophoretic display with integrated driver.
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  156. Comiskey, Barrett; Albert, Jonathan D.; Jacobson, Joseph M.; Wilcox, Russell J.; Drzaic, Paul, Microencapsulated electrophoretic electrostatically addressed media for drawing device applications.
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  157. Barrett Comiskey ; Jonathan D. Albert ; Joseph M. Jacobson ; Russell J. Wilcox ; Paul Drzaic, Microencapsulated electrophoretic electrostatically-addressed media for drawing device applications.
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  158. Drzaic,Paul S.; Amundson,Karl R.; Duthaler,Gregg M.; Kazlas,Peter T.; Chen,Yu, Minimally-patterned semiconductor devices for display applications.
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  159. Jonathan D. Albert ; Barrett Comiskey, Non-spherical cavity electrophoretic displays and materials for making the same.
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  160. Naoaki Yamaguchi JP; Koichiro Tanaka JP; Satoshi Teramoto JP, Optical processing apparatus and optical processing method.
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  161. Yamaguchi, Naoaki; Tanaka, Koichiro; Teramoto, Satoshi, Optical processing apparatus and optical processing method.
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  162. Yamaguchi,Naoaki; Tanaka,Koichiro; Teramoto,Satoshi, Optical processing apparatus and optical processing method.
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  163. Yamaguchi Naoaki,JPX ; Tanaka Koichiro,JPX ; Teramoto Satoshi,JPX, Optical processing method with control of the illumination energy of laser light.
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  164. Edwards, Chuck; Howarth, James John; Vanheusden, Karel, Optimized multi-layer printing of electronics and displays.
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  165. Yamazaki Shunpei,JPX, Photoelectric conversion device and method manufacturing same.
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  166. Takei, Michiko; Hara, Akito, Polysilicon film forming method.
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  167. Kuo Yue, Polysilicon grown by pulsed rapid thermal annealing.
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  168. Seong Moh Seo KR, Polysilicon thin film transistor and method of manufacturing the same.
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  169. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Process for fabricating a thin film transistor semiconductor device.
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  170. Denis, Kevin L.; Chen, Yu; Drzaic, Paul S.; Jacobson, Joseph M.; Kazlas, Peter T., Process for fabricating thin film transistors.
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  171. Denis,Kevin L; Chen,Yu; Drzaic,Paul S; Jacobson,Joseph M; Kazlas,Peter T, Process for fabricating thin film transistors.
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  172. Yamazaki,Shunpei; Ohtani,Hisashi; Mitsuki,Toru; Ohnuma,Hideto; Takano,Tamae; Kasahara,Kenji; Dairiki,Koji, Process for manufacturing a semiconductor device.
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  173. Yamazaki,Shunpei; Ohtani,Hisashi; Mitsuki,Toru; Ohnuma,Hideto; Takano,Tamae; Kasahara,Kenji; Dairiki,Koji, Process for manufacturing a semiconductor device.
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  174. Yamazaki,Shunpei; Arai,Yasuyuki, Process for producing a photoelectric conversion device that includes using a gettering process.
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  175. Amundson, Karl R.; Danner, Guy M.; Duthaler, Gregg M.; Kazlas, Peter T.; Chen, Yu; Denis, Kevin L.; Kane, Nathan R.; Ritenour, Andrew P., Processes for forming backplanes for electro-optic displays.
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  176. Amundson, Karl R.; Danner, Guy M.; Duthaler, Gregg M.; Kazlas, Peter T.; Chen, Yu; Denis, Kevin L.; Kane, Nathan R.; Ritenour, Andrew P., Processes for forming backplanes for electro-optic displays.
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  177. Amundson,Karl R.; Danner,Guy M.; Duthaler,Gregg M.; Kazlas,Peter T.; Chen,Yu; Denis,Kevin L.; Kane,Nathan R.; Ritenour,Andrew P., Processes for forming backplanes for electro-optic displays.
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  178. Kazlas,Peter T.; Kane,Nathan R.; Ritenour,Andrew P., Processes for forming backplanes for electro-optic displays.
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  179. Miyanaga, Akiharu; Mukao, Kyouichi, Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer.
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  180. Miyanaga, Akiharu; Mukao, Kyouichi, Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer.
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  181. Miyanaga,Akiharu; Mukao,Kyouichi, Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer.
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  182. Maekawa Masashi, Selective silicide thin-film transistor and method for same.
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  183. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor active region of TFTs having radial crystal grains through the whole area of the region.
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  184. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Shunpei Yamazaki JP; Yasuhiko Takemura JP, Semiconductor and process for fabricating the same.
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  185. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Semiconductor and process for fabricating the same.
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  186. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko, Semiconductor circuit and method of fabricating the same.
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  187. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Semiconductor circuit for electro-optical device and method of manufacturing the same.
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  188. Kato, Kiyoshi; Ozaki, Tadafumi; Mutaguchi, Kohei, Semiconductor device.
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  189. Kato,Kiyoshi; Ozaki,Tadafumi; Mutaguchi,Kohei, Semiconductor device.
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  190. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device.
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  191. Voutsas, Apostolos; Nakata, Yukihiko; Hosoda, Takeshi, Semiconductor device and a method of creating the same utilizing metal induced crystallization while suppressing partial solid phase crystallization.
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  192. Yamazaki Shunpei,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and a method of manufacturing the same.
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  193. Hisashi Ohtani JP; Tamae Takano JP; Chiho Kokubo JP, Semiconductor device and fabricating method thereof.
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  194. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Semiconductor device and fabrication method thereof.
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  195. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Semiconductor device and fabrication method thereof.
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  196. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki, Semiconductor device and fabrication method thereof.
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  197. Shunpei Yamazaki JP, Semiconductor device and its manufacturing method.
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  198. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP; Hisashi Ohtani JP; Toshiji Hamatani JP, Semiconductor device and its manufacturing method.
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  199. Yamazaki Shunpei,JPX, Semiconductor device and its manufacturing method.
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  200. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
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  201. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
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  202. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and its manufacturing method.
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  203. Nakamura, Osamu; Kajiwara, Masayuki; Yamazaki, Shunpei; Ohnuma, Hideto, Semiconductor device and manufacturing method of the same.
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  204. Nakamura,Osamu; Kajiwara,Masayuki; Yamazaki,Shunpei; Ohnuma,Hideto, Semiconductor device and manufacturing method of the same.
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  205. Kokubo, Chiho; Shiga, Aiko; Tanada, Yoshifumi; Yamazaki, Shunpei, Semiconductor device and manufacturing method therefor.
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  206. Shunpei Yamazaki JP; Hisashi Ohtani JP; Hideto Ohnuma JP; Satoshi Teramoto JP, Semiconductor device and manufacturing method thereof.
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  207. Tanaka, Koichiro; Ohnuma, Hideto, Semiconductor device and manufacturing method thereof.
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  208. Zhang, Hongyong, Semiconductor device and manufacturing method thereof.
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  209. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Semiconductor device and method for fabricating the same.
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  210. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
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  211. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
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  212. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method for fabricating the same.
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  213. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX, Semiconductor device and method for forming the same.
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  214. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
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  215. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
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  216. Shoji,Hironobu; Shimomura,Akihisa; Koyama,Masaki, Semiconductor device and method for manufacturing semiconductor device.
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  217. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
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  218. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
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  219. Akiharu Miyanaga JP; Hisashi Ohtani JP; Satoshi Teramoto JP, Semiconductor device and method for manufacturing the same.
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  220. Hiroki Adachi JP; Akira Takenouchi JP; Takeshi Fukada JP; Hiroshi Uehara JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
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  221. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Takeshi Fukunaga JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
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  222. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
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  223. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
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  224. Miyanaga,Akiharu; Ohtani,Hisashi; Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
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  225. Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Yamazaki,Shunpei; Kuwabara,Hideaki, Semiconductor device and method for manufacturing the same.
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  226. Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
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  227. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
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  228. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
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  229. Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
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  230. Takemura,Yasuhiro, Semiconductor device and method for manufacturing the same.
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  231. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Fukunaga Takeshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
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  232. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
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  233. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
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  234. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device and method for producing it.
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  235. Makita Naoki,JPX ; Funai Takashi,JPX, Semiconductor device and method for producing the same.
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  236. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.
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  237. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.
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  238. Yamazaki Shunpei,JPX, Semiconductor device and method of fabricating same.
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  239. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method of fabricating same.
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  240. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.
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  241. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.
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  242. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.
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  243. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method of fabricating same.
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  244. Takemura, Yasuhiko, Semiconductor device and method of fabricating the same.
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  245. Takemura,Yasuhiko, Semiconductor device and method of fabricating the same.
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  246. Hamada, Takashi; Murakami, Satoshi; Yamazaki, Shunpei; Nakamura, Osamu; Kajiwara, Masayuki; Koezuka, Junichi; Takayama, Toru, Semiconductor device and method of manufacturing the same.
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  247. Hamada,Takashi; Murakami,Satoshi; Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Takayama,Toru, Semiconductor device and method of manufacturing the same.
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  248. Kasahara, Kenji; Maekawa, Shinji; Shibata, Hiroshi; Miyairi, Hidekazu, Semiconductor device and method of manufacturing the same.
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  249. Kasahara,Kenji; Maekawa,Shinji; Shibata,Hiroshi; Miyairi,Hidekazu, Semiconductor device and method of manufacturing the same.
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  250. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method of manufacturing the same.
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  251. Ohtani, Hisashi; Takano, Tamae; Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
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  252. Ohtani, Hisashi; Takano, Tamae; Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
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  253. Ohtani,Hisashi; Takano,Tamae; Yamazaki,Shunpei, Semiconductor device and method of manufacturing the same.
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  254. Shunpei Yamazaki JP, Semiconductor device and method of manufacturing the same.
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  255. Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
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  256. Yamazaki, Shunpei; Ohtani, Hisashi, Semiconductor device and method of manufacturing the same.
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  257. Yamazaki, Shunpei; Ohtani, Hisashi, Semiconductor device and method of manufacturing the same.
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  258. Yamazaki,Shunpei, Semiconductor device and method of manufacturing the same.
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  259. Zhang Hongyong,JPX, Semiconductor device and method of manufacturing the same.
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  260. Zhang Hongyong,JPX, Semiconductor device and method of manufacturing the same.
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  261. Zhang, Hongyong, Semiconductor device and method of manufacturing the same.
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  262. Zhang,Hongyong, Semiconductor device and method of manufacturing the same.
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  263. Shunpei Yamazaki JP; Naoaki Yamaguchi JP; Setsuo Nakajima JP, Semiconductor device comprising a bottom gate type thin film transistor.
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  264. Ohtani, Hisashi; Adachi, Hiroki; Miyanaga, Akiharu; Takayama, Toru, Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film.
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  265. Hongyong Zhang JP; Toru Takayama JP; Yasuhiko Takemura JP; Akiharu Miyanaga JP; Hisashi Ohtani JP, Semiconductor device forming method.
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  266. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Semiconductor device forming method.
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  267. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi, Semiconductor device forming method.
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  268. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor device having a catalyst enhanced crystallized layer.
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  269. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device having a crystalline semiconductor film.
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  270. Zhang, Hongyong; Takayama, Toru, Semiconductor device having channel formation region comprising silicon and containing a group IV element.
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