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Semiconductor device employing crystallization catalyst

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/76
  • H01L-029/04
  • H01L-031/036
  • H01L-027/01
출원번호 US-0207124 (1994-03-08)
우선권정보 JP-0078999 (1993-03-12); JP-0079000 (1993-03-12)
발명자 / 주소
  • Zhang Hongyong (Kanagawa JPX) Uochi Hideki (Kanagawa JPX) Takayama Toru (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX) Yamamoto Mutsuo (Kanagawa JPX)
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd. (Atsugi JPX 03)
인용정보 피인용 횟수 : 256  인용 특허 : 0

초록

A substance containing a catalyst element is formed so as to closely contact with an amorphous silicon film, or a catalyst element is introduced into the amorphous silicon film. The amorphous silicon film is annealed at a temperature which is lower than a crystallization temperature of usual amorpho

대표청구항

A transistor comprising: an active region comprising a crystalline silicon film provided on a substrate; and an impurity region provided adjacent to said active region, wherein said active region contains a catalyst element for promoting crystallization at a concentration in the range of 1×1017 cm-3

이 특허를 인용한 특허 (256)

  1. Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Fukunaga Takeshi,JPX ; Zhang Hongyong,JPX, Active Matry Display.
  2. Zhang Hongyong,JPX ; Kusumoto Naoto,JPX, Active matrix device including thin film transistors.
  3. Hayakawa Masahiko,JPX ; Tsukamoto Yosuke,JPX, Active matrix display device having multiple gate electrode portions.
  4. Masahiko Hayakawa JP; Yosuke Tsukamoto JP, Active matrix display device having multiple gate electrode portions.
  5. Gealy, Daniel; Chapek, Dave; DeBoer, Scott; Al-Shareef, Husam N.; Thakur, Randhir, Apparatus for stabilizing high pressure oxidation of a semiconductor device.
  6. Gealy,Daniel F.; Chapek,Dave; DeBoer,Scott; Al Shareef,Husam N.; Thakur,Randhir, Apparatus for stabilizing high pressure oxidation of a semiconductor device.
  7. Gealy,Daniel; Chapek,Dave; DeBoer,Scott; Al Shareef,Husam N.; Thakur,Randhir, Apparatus for stabilizing high pressure oxidation of a semiconductor device.
  8. Richard Ernest Demaray ; Chandra Deshpandey ; Rajiv Gopal Pethe, Collimated sputtering of semiconductor and other films.
  9. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Display switch with double layered gate insulation and resinous interlayer dielectric.
  10. Ohtani Hisashi,JPX ; Koyama Jun,JPX ; Yamazaki Shunpei,JPX, Electro-optical device and semiconductor circuit.
  11. Ohtani,Hisashi; Koyama,Jun; Yamazaki,Shunpei, Electro-optical device and semiconductor circuit.
  12. Ohtani,Hisashi; Koyama,Jun; Yamazaki,Shunpei, Electro-optical device and semiconductor circuit.
  13. Ohtani, Hisashi; Koyama, Jun; Yamazaki, Shunpei, Electro-optical device and semiconductor device.
  14. Hongyong Zhang JP; Naoto Kusumoto JP, Electro-optical device and thin film transistor and method for forming the same.
  15. Zhang Hongyong,JPX ; Kusumoto Naoto,JPX, Electro-optical device and thin film transistor and method for forming the same.
  16. Zhang, Hongyong; Kusumoto, Naoto, Electro-optical device and thin film transistor and method for forming the same.
  17. Zhang,Hongyong; Kusumoto,Naoto, Electro-optical device and thin film transistor and method for forming the same.
  18. Yamauchi, Yukio; Fukunaga, Takeshi, Electronic device and electronic apparatus.
  19. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Fabrication method of semiconductor device.
  20. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Fabrication method of semiconductor device.
  21. Fukunaga, Takeshi; Maruyama, Junya, Light-emitting device.
  22. Fukunaga, Takeshi; Maruyama, Junya, Light-emitting device and method of manufacturing the same.
  23. Fukunaga, Takeshi; Maruyama, Junya, Light-emitting device and method of manufacturing the same.
  24. Fukunaga, Takeshi; Maruyama, Junya, Light-emitting device and method of manufacturing the same.
  25. Yamazaki, Shunpei; Arai, Yasuyuki, Manufacturing method for top-gate type and bottom-gate type thin film transistors.
  26. Ohtani, Hisashi, Metal-gettering method used in the manufacture of crystalline-Si TFT.
  27. Daniel Gealy ; Dave Chapek ; Scott DeBoer ; Husam N. Al-Shareef ; Randhir Thakur, Method and apparatus for stabilizing high pressure oxidation of a semiconductor device.
  28. Gealy F. Daniel ; Chapek Dave ; DeBoer Scott ; Al-Shareef Husam N. ; Thakur Randhir, Method and apparatus for stabilizing high pressure oxidation of a semiconductor device.
  29. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Method for fabricating a semiconductor device.
  30. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Method for fabricating a semiconductor device.
  31. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Method for fabricating a semiconductor device.
  32. Maekawa,Shinji; Akimoto,Kengo, Method for fabricating thin film transistor.
  33. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Fukunaga Takeshi,JPX ; Takemura Yasuhiko,JPX, Method for forming a semiconductor device.
  34. Yamazaki Shunpei,JPX ; Komaya Jun,JPX ; Miyanaga Akiharu,JPX ; Fukunaga Takeshi,JPX, Method for forming semiconductor thin film.
  35. Hisashi Ohtani JP; Hiroki Adachi JP; Akiharu Miyanaga JP; Toru Takayama JP, Method for manufacturing a semiconductor device.
  36. Hongyong Zhang JP, Method for manufacturing a semiconductor device.
  37. Ohtani, Hisashi; Miyanaga, Akiharu; Fukunaga, Takeshi; Zhang, Hongyong, Method for manufacturing a semiconductor device.
  38. Ohtani,Hisashi; Adachi,Hiroki; Miyanaga,Akiharu; Takayama,Toru, Method for manufacturing a semiconductor device.
  39. Ohtani,Hisashi; Miyanaga,Akiharu; Fukunaga,Takeshi; Zhang,Hongyong, Method for manufacturing a semiconductor device.
  40. Yamazaki,Shunpei; Yamaguchi,Naoaki; Nakajima,Setsuo, Method for manufacturing a semiconductor device.
  41. Yasuhiko Takemura JP, Method for manufacturing a semiconductor device.
  42. Zhang,Hongyong, Method for manufacturing a semiconductor device.
  43. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Method for manufacturing a thin film transistor device.
  44. Fukunaga, Takeshi; Maruyama, Junya, Method for manufacturing light emitting device.
  45. Fukunaga, Takeshi; Maruyama, Junya, Method for manufacturing light emitting device comprising reflective film.
  46. Ohtani, Hisashi; Miyanaga, Akiharu; Teramoto, Satoshi; Yamazaki, Shunpei, Method for manufacturing semiconductor device.
  47. Ohtani, Hisashi; Miyanaga, Akiharu; Teramoto, Satoshi; Yamazaki, Shunpei, Method for manufacturing semiconductor device.
  48. Ohtani, Hisashi; Miyanaga, Akiharu; Zhang, Hongyong; Yamaguchi, Naoaki, Method for manufacturing semiconductor device.
  49. Ohtani, Hisashi; Miyanaga, Akiharu; Zhang, Hongyong; Yamaguchi, Naoaki, Method for manufacturing semiconductor device with crystallization of amorphous silicon.
  50. Tanaka, Koichiro; Ohnuma, Hideto, Method for manufacturing transistor semiconductor devices with step of annealing to getter metal with phosphorous.
  51. Ohtani Hisashi,JPX, Method for producing a semiconductor device.
  52. Zhang Hongyong,JPX ; Takayama Toru,JPX, Method for producing a semiconductor device including doping with a catalyst that is a group IV element.
  53. Yamazaki, Shunpei; Nakajima, Setsuo; Arai, Yasuyuki, Method for producing display device.
  54. Yamazaki, Shunpei; Nakajima, Setsuo; Arai, Yasuyuki, Method for producing display device.
  55. Yamazaki,Shunpei; Nakajima,Setsuo; Arai,Yasuyuki, Method for producing display-device.
  56. Hongyong Zhang JP; Yasuhiko Takemura JP; Toru Takayama JP, Method for producing semiconductor device.
  57. Ohtani Hisashi,JPX ; Fukunaga Takeshi,JPX ; Miyanaga Akiharu,JPX, Method for producing semiconductor device.
  58. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Ohnuma Hideto,JPX, Method for producing semiconductor device.
  59. Yamazaki, Shunpei; Ohtani, Hisashi; Ohnuma, Hideto, Method for producing semiconductor device.
  60. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Method for producing semiconductor device.
  61. Zhang, Hongyong; Takemura, Yasuhiko; Takayama, Toru, Method for producing semiconductor device.
  62. Gealy, Daniel F; Chapek, Dave; DeBoer, Scott; Al-Shareef, Husam N.; Thakur, Randhir, Method for stabilizing high pressure oxidation of a semiconductor device.
  63. Gealy, F. Daniel; DeBoer, Scott; Chapek, Dave; Al-Shareef, Husam N.; Thakur, Randhir, Method for stabilizing high pressure oxidation of a semiconductor device.
  64. Gealy,Daniel; Chapek,Dave; DeBoer,Scott; Al Shareef,Husam N.; Thakur,Randhir, Method for stabilizing high pressure oxidation of a semiconductor device.
  65. Lee, Kyung-Eon; Kim, Sung-Ki, Method of crystallizing a silicon film with a metal catalyst.
  66. Kim,Heon je, Method of crystallizing silicon film and method of manufacturing thin film transistor liquid crystal display.
  67. Yasuhiko Takemura JP, Method of fabricating a semiconductor device.
  68. Fukunaga,Takeshi; Ohtani,Hisashi; Miyanaga,Akiharu, Method of fabricating a semiconductor device utilizing a catalyst material solution.
  69. Jung, In-Young, Method of fabricating a thin film transistor using joule heat from the gate electrode to form a crystallized channel region.
  70. Nakajima,Setsuo; Ohtani,Hisashi, Method of fabricating semiconductor device.
  71. Yamazaki Shunpei,JPX ; Kusumoto Naoto,JPX ; Teramoto Satoshi,JPX, Method of fabricating semiconductor device.
  72. Nakajima, Setsuo; Ohtani, Hisashi, Method of forming a semiconductor device using a group XV element for gettering by means of infrared light.
  73. Yamamoto Ichiro,JPX, Method of forming an HSG capacitor layer via implantation.
  74. Ohtani, Hisashi, Method of forming crystalline silicon film.
  75. Shunpei Yamazaki JP; Mitsunori Sakama JP; Yasuhiko Takemura JP, Method of making crystal silicon semiconductor and thin film transistor.
  76. Kyung Eon Lee KR, Method of manufacturing a polysilicon active layer in a thin film transistor.
  77. Hisashi Ohtani JP; Akiharu Miyanaga JP; Junichi Takeyama JP, Method of manufacturing a semiconductor device.
  78. Isobe,Atsuo; Arao,Tatsuya, Method of manufacturing a semiconductor device.
  79. Ohnuma, Hideto; Yamazaki, Shunpei; Nakajima, Setsuo; Ohtani, Hisashi, Method of manufacturing a semiconductor device.
  80. Yamamoto Yoshitaka,JPX ; Suzawa Hideomi,JPX ; Awane Katunobu,JPX ; Funada Fumiaki,JPX ; Yamazaki Shunpei,JPX, Method of manufacturing a semiconductor device.
  81. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Method of manufacturing a semiconductor device.
  82. Yamazaki, Shunpei; Nakamura, Osama; Kajiwara, Masayuki; Koezuka, Junichi; Dairiki, Koji; Mitsuki, Toru; Takayama, Toru; Ohnuma, Hideto; Asami, Taketomi; Ichijo, Mitsuhiro, Method of manufacturing a semiconductor device.
  83. Yamazaki, Shunpei; Nakamura, Osamu; Kajiwara, Masayuki; Koezuka, Junichi; Dairiki, Koji; Mitsuki, Toru; Takayama, Toru; Ohnuma, Hideto; Asami, Taketomi; Ichijo, Mitsuhiro, Method of manufacturing a semiconductor device.
  84. Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Dairiki,Koji; Mitsuki,Toru; Takayama,Toru; Ohnuma,Hideto; Asami,Taketomi; Ichijo,Mitsuhiro, Method of manufacturing a semiconductor device.
  85. Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Dairiki,Koji; Mitsuki,Toru; Takayama,Toru; Ohnuma,Hideto; Asami,Taketomi; Ichijo,Mitsuhiro, Method of manufacturing a semiconductor device.
  86. Yamazaki,Shunpei; Ohnuma,Hideto; Dairiki,Koji; Mitsuki,Toru; Takayama,Toru; Akimoto,Kengo, Method of manufacturing a semiconductor device.
  87. Yamazaki,Shunpei; Ohtani,Hisashi; Hamatani,Toshiji, Method of manufacturing a semiconductor device.
  88. Zhang, Hongyong; Kusumoto, Naoto, Method of manufacturing a semiconductor device.
  89. Hamada,Takashi; Murakami,Satoshi; Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Takayama,Toru, Method of manufacturing a semiconductor device comprising doping steps using gate electrodes and resists as masks.
  90. Ohtani,Hisashi; Koyama,Jun; Ogata,Yasushi; Yamazaki,Shunpei, Method of manufacturing a semiconductor device having TFTs with uniform characteristics.
  91. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Method of manufacturing a semiconductor device including reduction of a catalyst.
  92. Maekawa,Shinji, Method of manufacturing a semiconductor device that includes forming a material with a high tensile stress in contact with a semiconductor film to getter impurities from the semiconductor film.
  93. Isobe, Atsuo; Arao, Tatsuya, Method of manufacturing a semiconductor device, utilizing a laser beam for crystallization.
  94. Shunpei Yamazaki JP, Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device.
  95. Yamazaki, Shunpei, Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device.
  96. Yamazaki,Shunpei, Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device by transferring crystallization promoting material in the first semiconductor film to the second semico.
  97. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Method of manufacturing a thin film transistor device.
  98. Ohtani Hisashi,JPX, Method of manufacturing a thin film transistor involving laser treatment.
  99. Nakamura, Osamu; Yamazaki, Shunpei; Dairiki, Koji; Kajiwara, Masayuki; Koezuka, Junichi; Murakami, Satoshi, Method of manufacturing semiconductor device.
  100. Nakamura, Osamu; Yamazaki, Shunpei; Dairiki, Koji; Kajiwara, Masayuki; Koezuka, Junichi; Murakami, Satoshi, Method of manufacturing semiconductor device.
  101. Nakamura,Osamu; Yamazaki,Shunpei; Dairiki,Koji; Kajiwara,Masayuki; Koezuka,Junichi; Murakami,Satoshi, Method of manufacturing semiconductor device.
  102. Ohtani Hisashi,JPX, Method of manufacturing semiconductor device.
  103. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Miyanaga Akiharu,JPX, Method of manufacturing semiconductor device.
  104. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Miyanaga Akiharu,JPX, Method of manufacturing semiconductor device.
  105. Yamazaki,Shunpei; Mitsuki,Toru, Method of manufacturing semiconductor device.
  106. Yamazaki, Shunpei; Nakamura, Osamu; Kajiwara, Masayuki; Koezuka, Junichi, Method of manufacturing semiconductor device and semiconductor device.
  107. Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi, Method of manufacturing semiconductor device that includes selectively adding a noble gas element.
  108. Yamazaki Shunpei,JPX, Method of manufacturing semiconductor devices using a crystallization promoting material.
  109. Yamazaki Shunpei,JPX ; Arai Yasuyuki,JPX, Microcrystal silicon film and its manufacturing method, and photoelectric conversion device and its manufacturing method.
  110. Yamazaki Shunpei,JPX, Photoelectric conversion device and method manufacturing same.
  111. Hsu,Chien Chou; Hsu,Tsung Yi, Polysilicon structure, thin film transistor panel using the same, and manufacturing method of the same.
  112. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Process for fabricating a thin film transistor semiconductor device.
  113. Yamazaki,Shunpei; Ohtani,Hisashi; Mitsuki,Toru; Ohnuma,Hideto; Takano,Tamae; Kasahara,Kenji; Dairiki,Koji, Process for manufacturing a semiconductor device.
  114. Yamazaki,Shunpei; Ohtani,Hisashi; Mitsuki,Toru; Ohnuma,Hideto; Takano,Tamae; Kasahara,Kenji; Dairiki,Koji, Process for manufacturing a semiconductor device.
  115. Yamazaki,Shunpei; Arai,Yasuyuki, Process for producing a photoelectric conversion device that includes using a gettering process.
  116. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Kitakado Hidehito,JPX, Process of fabricating a semiconductor device.
  117. Yamazaki, Shunpei; Koyama, Jun; Kitakado, Hidehito, Process of fabricating a semiconductor device.
  118. Yamazaki,Shunpei; Koyama,Jun; Kitakado,Hidehito, Process of fabricating a semiconductor device.
  119. Shunpei Yamazaki JP, Removing a crystallization catalyst from a semiconductor film during semiconductor device fabrication.
  120. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor active region of TFTs having radial crystal grains through the whole area of the region.
  121. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Shunpei Yamazaki JP; Yasuhiko Takemura JP, Semiconductor and process for fabricating the same.
  122. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Semiconductor and process for fabricating the same.
  123. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Semiconductor circuit and method of fabricating the same.
  124. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko, Semiconductor circuit and method of fabricating the same.
  125. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Semiconductor circuit for electro-optical device and method of manufacturing the same.
  126. Kato, Kiyoshi; Ozaki, Tadafumi; Mutaguchi, Kohei, Semiconductor device.
  127. Kato,Kiyoshi; Ozaki,Tadafumi; Mutaguchi,Kohei, Semiconductor device.
  128. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device.
  129. Yamazaki Shunpei,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and a method of manufacturing the same.
  130. Hisashi Ohtani JP; Tamae Takano JP; Chiho Kokubo JP, Semiconductor device and fabricating method thereof.
  131. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Semiconductor device and fabrication method thereof.
  132. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Semiconductor device and fabrication method thereof.
  133. Yamazaki, Shunpei; Teramoto, Satoshi, Semiconductor device and fabrication method thereof.
  134. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki, Semiconductor device and fabrication method thereof.
  135. Shunpei Yamazaki JP, Semiconductor device and its manufacturing method.
  136. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP; Hisashi Ohtani JP; Toshiji Hamatani JP, Semiconductor device and its manufacturing method.
  137. Yamazaki Shunpei,JPX, Semiconductor device and its manufacturing method.
  138. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
  139. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
  140. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and its manufacturing method.
  141. Shibata,Hiroshi; Nakamura,Osamu; Naka,Shunichi; Ueda,Tohru, Semiconductor device and manufacture method thereof.
  142. Nakamura, Osamu; Kajiwara, Masayuki; Yamazaki, Shunpei; Ohnuma, Hideto, Semiconductor device and manufacturing method of the same.
  143. Nakamura,Osamu; Kajiwara,Masayuki; Yamazaki,Shunpei; Ohnuma,Hideto, Semiconductor device and manufacturing method of the same.
  144. Ohshima, Kazuaki, Semiconductor device and manufacturing method thereof.
  145. Shunpei Yamazaki JP; Hisashi Ohtani JP; Hideto Ohnuma JP; Satoshi Teramoto JP, Semiconductor device and manufacturing method thereof.
  146. Tanaka, Koichiro; Ohnuma, Hideto, Semiconductor device and manufacturing method thereof.
  147. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Semiconductor device and method for fabricating the same.
  148. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
  149. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
  150. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method for fabricating the same.
  151. Satoshi Teramoto JP, Semiconductor device and method for forming the same.
  152. Teramoto, Satoshi, Semiconductor device and method for forming the same.
  153. Yamazaki Shunpei,JPX ; Zhang Hongyong,JPX, Semiconductor device and method for forming the same.
  154. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
  155. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
  156. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  157. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  158. Hiroki Adachi JP; Akira Takenouchi JP; Takeshi Fukada JP; Hiroshi Uehara JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
  159. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Takeshi Fukunaga JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
  160. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  161. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  162. Miyanaga,Akiharu; Ohtani,Hisashi; Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
  163. Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Yamazaki,Shunpei; Kuwabara,Hideaki, Semiconductor device and method for manufacturing the same.
  164. Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  165. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  166. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  167. Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
  168. Takemura,Yasuhiro, Semiconductor device and method for manufacturing the same.
  169. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Fukunaga Takeshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  170. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  171. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  172. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device and method for producing it.
  173. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.
  174. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.
  175. Yamazaki Shunpei,JPX, Semiconductor device and method of fabricating same.
  176. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method of fabricating same.
  177. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.
  178. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.
  179. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.
  180. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method of fabricating same.
  181. Shunpei Yamazaki JP; Yasuhiko Takemura JP; Hongyong Zhang JP, Semiconductor device and method of fabricating the same.
  182. Takemura, Yasuhiko, Semiconductor device and method of fabricating the same.
  183. Takemura,Yasuhiko, Semiconductor device and method of fabricating the same.
  184. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX, Semiconductor device and method of fabricating the same.
  185. Hamada, Takashi; Murakami, Satoshi; Yamazaki, Shunpei; Nakamura, Osamu; Kajiwara, Masayuki; Koezuka, Junichi; Takayama, Toru, Semiconductor device and method of manufacturing the same.
  186. Hamada,Takashi; Murakami,Satoshi; Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Takayama,Toru, Semiconductor device and method of manufacturing the same.
  187. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method of manufacturing the same.
  188. Shunpei Yamazaki JP, Semiconductor device and method of manufacturing the same.
  189. Shunpei Yamazaki JP; Hisashi Ohtani JP; Jun Koyama JP; Takeshi Fukunaga JP, Semiconductor device and method of manufacturing the same.
  190. Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
  191. Yamazaki, Shunpei; Hayakawa, Masahiko, Semiconductor device and method of manufacturing the same.
  192. Yamazaki, Shunpei; Ohtani, Hisashi, Semiconductor device and method of manufacturing the same.
  193. Yamazaki, Shunpei; Ohtani, Hisashi, Semiconductor device and method of manufacturing the same.
  194. Yamazaki, Shunpei; Ohtani, Hisashi; Koyama, Jun; Fukunaga, Takeshi, Semiconductor device and method of manufacturing the same.
  195. Yamazaki,Shunpei; Ohtani,Hisashi; Koyama,Jun; Fukunaga,Takeshi, Semiconductor device and method of manufacturing the same.
  196. Zhang Hongyong,JPX, Semiconductor device and method of manufacturing the same.
  197. Zhang Hongyong,JPX, Semiconductor device and method of manufacturing the same.
  198. Zhang, Hongyong, Semiconductor device and method of manufacturing the same.
  199. Zhang,Hongyong, Semiconductor device and method of manufacturing the same.
  200. Shunpei Yamazaki JP; Naoaki Yamaguchi JP; Setsuo Nakajima JP, Semiconductor device comprising a bottom gate type thin film transistor.
  201. Ohtani, Hisashi; Adachi, Hiroki; Miyanaga, Akiharu; Takayama, Toru, Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film.
  202. Hongyong Zhang JP; Toru Takayama JP; Yasuhiko Takemura JP; Akiharu Miyanaga JP; Hisashi Ohtani JP, Semiconductor device forming method.
  203. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Semiconductor device forming method.
  204. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi, Semiconductor device forming method.
  205. Teramoto Satoshi,JPX, Semiconductor device having SiO.sub.x N.sub.y gate insulating film.
  206. Teramoto, Satoshi, Semiconductor device having SiOxNy film.
  207. Teramoto, Satoshi, Semiconductor device having SiOxNy gate insulating film.
  208. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor device having a catalyst enhanced crystallized layer.
  209. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device having a crystalline semiconductor film.
  210. Zhang, Hongyong; Kusumoto, Naoto, Semiconductor device having a thin film transistor.
  211. Hayakawa Masahiko,JPX, Semiconductor device having an active layer with separate layers where one of the layers acts as crystal nuclei for the.
  212. Zhang, Hongyong; Takayama, Toru, Semiconductor device having channel formation region comprising silicon and containing a group IV element.
  213. Yamazaki,Shunpei; Ohtani,Hisashi; Koyama,Jun; Fukunaga,Takeshi, Semiconductor device having crystalline semiconductor layer.
  214. Yamazaki, Shunpei; Teramoto, Satoshi, Semiconductor device having parallel thin film transistors.
  215. Yamazaki, Shunpei; Teramoto, Satoshi, Semiconductor device having thin film transistor.
  216. Ohtani, Hisashi; Takano, Tamae; Kokubo, Chiho, Semiconductor device method of manufacturing.
  217. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi, Semiconductor device structure.
  218. Honda, Tatsuya, Semiconductor device used as electro-optical device having channel formation region containing first element, and source or drain region containing second element.
  219. Kimura, Hajime, Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer.
  220. Yamazaki, Shunpei, Semiconductor device with heat-resistant gate.
  221. Ohtani,Hisashi; Miyanaga,Akiharu; Zhang,Hongyong; Yamaguchi,Naoaki, Semiconductor device with residual nickel from crystallization of semiconductor film.
  222. Yamazaki,Shunpei; Fujimoto,Etsuko; Isobe,Atsuo; Takayama,Toru; Fukuchi,Kunihiko, Semiconductor device with semiconductor circuit comprising semiconductor units, and method for fabricating it.
  223. Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Semiconductor device/circuit having at least partially crystallized semiconductor layer.
  224. Yamazaki, Shunpei; Nakajima, Setsuo; Arai, Yasuyuki, Semiconductor display devices.
  225. Yamazaki,Shunpei; Nakajima,Setsuo; Arai,Yasuyuki, Semiconductor display devices.
  226. Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
  227. Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
  228. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
  229. Ohtani Hisashi,JPX ; Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Miyanaga Akiharu,JPX, Semiconductor thin film and semiconductor device.
  230. Shunpei Yamazaki JP; Hisashi Ohtani JP; Toru Mitsuki JP; Akiharu Miyanaga JP; Yasushi Ogata JP, Semiconductor thin film and semiconductor device.
  231. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Mitsuki Toru,JPX ; Miyanaga Akiharu,JPX ; Ogata Yasushi,JPX, Semiconductor thin film and semiconductor device.
  232. Yamazaki, Shunpei; Ohtani, Hisashi; Mitsuki, Toru; Miyanaga, Akiharu; Ogata, Yasushi, Semiconductor thin film and semiconductor device.
  233. Yamazaki, Shunpei; Ohtani, Hisashi; Mitsuki, Toru; Miyanaga, Akiharu; Ogata, Yasushi, Semiconductor thin film and semiconductor device.
  234. Yamazaki, Shunpei; Ohtani, Hisashi; Mitsuki, Toru; Miyanaga, Akiharu; Ogata, Yasushi, Semiconductor thin film and semiconductor device.
  235. Yamazaki,Shunpei; Ohtani,Hisashi; Mitsuki,Toru; Miyanaga,Akiharu; Ogata,Yasushi, Semiconductor thin film and semiconductor device.
  236. Hisashi Ohtani JP; Akiharu Miyanaga JP; Takeshi Fukunaga JP; Hongyong Zhang JP, Semiconductor thin film transistor with crystal orientation.
  237. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Miyanaga Akiharu,JPX ; Fukunaga Takeshi,JPX, Semiconductor thin film, semiconductor device and manufacturing method thereof.
  238. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film, semiconductor device and manufacturing method thereof.
  239. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film, semiconductor device and manufacturing method thereof.
  240. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor, semiconductor device, and method for fabricating the same.
  241. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor, semiconductor device, and method for fabricating the same.
  242. Yamazaki,Shunpei; Takemura,Yasuhiko; Zhang,Hongyong; Takayama,Toru; Uochi,Hideki, Semiconductor, semiconductor device, and method for fabricating the same.
  243. Yamazaki, Shunpei; Miyanaga, Akiharu; Koyama, Jun; Fukunaga, Takeshi, Thin film semiconductor device and its manufacturing method.
  244. Fukuda, Kaichi, Thin film transistor and manufacturing process therefor.
  245. Yi Jong-Hoon,KRX ; Lee Sang-Gul,KRX, Thin film transistor having a crystallization seed layer and a method for manufacturing thereof.
  246. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Thin film transistor having grain boundaries with segregated oxygen and halogen elements.
  247. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.
  248. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.
  249. Yamazaki, Shunpei; Teramoto, Satoshi, Thin film type monolithic semiconductor device.
  250. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Thin-film transistor and fabrication method for same.
  251. Ohnuma Hideto,JPX ; Yamazaki Shunpei,JPX, Thin-film transistor and semiconductor device using thin-film transistors.
  252. Ohnuma, Hideto; Yamazaki, Shunpei, Thin-film transistor and semiconductor device using thin-film transistors.
  253. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Transistor and semiconductor device having columnar crystals.
  254. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko; Miyanaga, Akiharu; Ohtani, Hisashi, Transistor and semiconductor device having columnar crystals.
  255. Hideki Uochi JP; Yasuhiko Takemura JP, Transistor device and method of forming the same.
  256. Nanba Norihiro,JPX, Zoom lens and optical apparatus having the same.
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