초록

A monolithic circuit comprises a plurality of thin film transistors. Source and drain regions of the TFT are provided with a metal silicide layer having a relatively low resistivity. Thereby, the effective distance between a gate and a source/drain electrode can be reduced.

대표청구항 ▼

A semiconductor device comprising: a substrate having an insulting surface; and a plurality of thin film transistors formed on said insulating surface, at least one of said thin film transistors comprising a silicon semiconductor layer including source, drain and channel regions, metal silicide regi

A semiconductor device comprising: a substrate having an insulting surface; and a plurality of thin film transistors formed on said insulating surface, at least one of said thin film transistors comprising a silicon semiconductor layer including source, drain and channel regions, metal silicide regions connected to said source and drain regions, a gate insulating layer formed on said semiconductor layer, a gate electrode formed on said gate insulating layer, and an oxide insulating layer comprising an oxide of a material of said gate electrode formed on at least side surfaces of said gate electrode, wherein said at least one of the thin film transistors is provided with side spacers adjacent to the side surfaces of said gate electrode with said oxide insulating layer interposed therebetween, and inner edges of said metal silicide regions are substantially aligned with outer edges of said side spacers.