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Method of making a semiconductor device having a gate all around type of thin film transistor 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/786
출원번호 US-0425646 (1995-04-20)
우선권정보 JP-0231849 (1993-09-17); JP-0195669 (1994-08-19)
발명자 / 주소
  • Maegawa Shigeto (Itami JPX)
출원인 / 주소
  • Mitsubishi Denki Kabushiki Kaisha (Tokyo JPX 03)
인용정보 피인용 횟수 : 134  인용 특허 : 2

초록 ▼

A method of manufacturing a semiconductor device including forming an insulating film on a substrate; forming an opening in the insulating film by anisotropic etching; embedding a dummy member in the opening; forming a channel member over the insulating film and the dummy member; removing the dummy

대표청구항 ▼

A method of manufacturing a semiconductor device comprising: forming an insulating film on a substrate; forming an opening in the insulating film by anisotropic etching; embedding a dummy member in the opening; forming a channel member over the insulating film and the dummy member; removing the dumm

이 특허에 인용된 특허 (2)

  1. Gotou Hiroshi (Niiza JPX), Manufacturing method for semiconductor device.
    상세보기
  2. Omura Yasuhisa (Kanagawa JPX) Kunii Yasuo (Kanagawa JPX) Izumi Katsutoshi (Kanagawa JPX), Method of manufacturing SOI semiconductor element.
    상세보기

이 특허를 인용한 특허 (134)

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