초록 ▼

In the present invention, an inlaid interconnect (44) is formed by chemical mechanical polishing. A polish assisting layer (31), in the form of an aluminum nitride layer, is formed between an interlayer dielectric (30) and an interconnect metal (42) to prevent dishing or cusping of the interconnect

In the present invention, an inlaid interconnect (44) is formed by chemical mechanical polishing. A polish assisting layer (31), in the form of an aluminum nitride layer, is formed between an interlayer dielectric (30) and an interconnect metal (42) to prevent dishing or cusping of the interconnect upon polishing. By allowing the sacrificial polish assisting layer (31) to be removed at close to the same rate as interconnect metal (42) during the final stages of polishing, dishing is avoided. The aluminum nitride layer also facilitates chemical vapor deposition of aluminum as the interconnect metal by providing a more suitable nucleation site for aluminum than exists with silicon dioxide.

대표청구항 ▼

A method for forming a semiconductor device comprising the steps of: providing a semiconductor substrate; depositing a dielectric layer over the semiconductor substrate; depositing a polish assisting layer on the dielectric layer, wherein the polish assisting layer is comprised of aluminum nitride;

A method for forming a semiconductor device comprising the steps of: providing a semiconductor substrate; depositing a dielectric layer over the semiconductor substrate; depositing a polish assisting layer on the dielectric layer, wherein the polish assisting layer is comprised of aluminum nitride; etching an opening through the polish assisting layer and into the dielectric layer; depositing a metal layer comprised of aluminum over the semiconductor substrate and on the polish assisting layer, wherein the metal layer fills the opening; and removing portions of the metal layer existing beyond the opening by polishing.