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Light-emitting gallium nitride-based compound semiconductor device 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-033/00
출원번호 US-0153153 (1993-11-17)
우선권정보 JP-0335556 (1992-11-20); JP-0018122 (1993-01-08); JP-0018123 (1993-01-08); JP-0070873 (1993-03-05); JP-0070874 (1993-03-05); JP-0114542 (1993-05-17); JP-0114543 (1993-05-17); JP-0114544 (1993-05-17)
발명자 / 주소
  • Nakamura Shuji (Anan JPX) Mukai Takashi (Anan JPX) Iwasa Naruhito (Anan JPX)
출원인 / 주소
  • Nichia Chemical Industries, Ltd. (JPX 03)
인용정보 피인용 횟수 : 281  인용 특허 : 2

초록 ▼

A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity InxGa1-xN (0

대표청구항 ▼

A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising: a light-emitting layer having first and second major surfaces and formed of a low-resistivity InxGa1-xN, where 01 ductor doped with an impurity; a first clad layer joined to said first ma

이 특허에 인용된 특허 (2)

  1. Kitagawa Masahiko (Shiki JPX) Tomomura Yoshitaka (Nara JPX) Nakanishi Kenji (Nara JPX), Electroluminescent device of compound semiconductor with buffer layer.
    상세보기
  2. Yamada Masato (Annaka JPX) Takenaka Takao (Annaka JPX), Light emitting device with double heterostructure.
    상세보기

이 특허를 인용한 특허 (281)

  1. Lee, Chung Hoon, (Al, Ga, In)N-based compound semiconductor and method of fabricating the same.
    상세보기
  2. Oh,Steve Tchang Hun; Choi,Hong K.; Tsaur,Bor Yeu; Fan,John C. C., Bonding pad for gallium nitride-based light-emitting device.
    상세보기
  3. Oh,Tchang Hun; Choi,Hong K.; Fan,John C. C.; Narayan,Jagdish, Bonding pad for gallium nitride-based light-emitting devices.
    상세보기
  4. Fenwick, William E., Boron-containing buffer layer for growing gallium nitride on silicon.
    상세보기
  5. Chen, Zhen, Buffer layer for GaN-on-Si LED.
    상세보기
  6. Li, Yi-Qun; Dong, Yi; Xu, Xiaofeng, Color temperature tunable white light source.
    상세보기
  7. Caruso, James; Edwards, Charles, Color tunable light emitting device.
    상세보기
  8. Caruso, James; Edwards, Charles O., Color tunable light emitting device.
    상세보기
  9. Tysoe, Steven Alfred; Barash, Eugene; Pris, Andrew David, DNA biosensor and methods for making and using the same.
    상세보기
  10. Levinson Lionel Monty ; Srivastava Alok Mani ; Duclos Steven Jude ; Duggal Anil Raj, Decorative lighting apparatus with light source and luminescent material.
    상세보기
  11. LeBoeuf, Steven Francis; Sandvik, Peter Micah; Potyrailo, Radislav Alexandrovich, Detection apparatus and associated method.
    상세보기
  12. Benz, Paul; Hinderling, Jurg, Device for determining the influence of dispersion on a measurement.
    상세보기
  13. Shimizu, Yoshinori; Sakano, Kensho; Noguchi, Yasunobu; Moriguchi, Toshio, Device for emitting white-color light.
    상세보기
  14. Dai, Bing; Yuan, Xianglong; Wang, Gang; Edwards, Charles, Diffuser component having scattering particles.
    상세보기
  15. Kirlin Peter S. ; Summerfelt Scott R. ; McIntryre Paul, Diffusion barriers between noble metal electrodes and metallization layers, and integrated circuit and semiconductor devices comprising same.
    상세보기
  16. Lin, Chao-Kun, Distributed bragg reflector for reflecting light of multiple wavelengths from an LED.
    상세보기
  17. Lin, Chao-Kun, Distributed bragg reflector for reflecting light of multiple wavelengths from an LED.
    상세보기
  18. Chuang, Chih-Wei; Lin, Chao-Kun, Distributed current blocking structures for light emitting diodes.
    상세보기
  19. Chuang, Chih-Wei; Lin, Chao-Kun, Distributed current blocking structures for light emitting diodes.
    상세보기
  20. Narayan, Jagdish, Domain epitaxy for thin film growth.
    상세보기
  21. Edmond John A. ; Kong Hua-Shuang, Double heterojunction light emitting diode with gallium nitride active layer.
    상세보기
  22. Edmond John A. ; Kong Hua-Shuang, Double heterojunction light emitting diode with gallium nitride active layer.
    상세보기
  23. Narayan, Jagdish; Ye, Jinlin; Hon, Schang-Jing; Fox, Ken; Chen, Jyh Chia; Choi, Hong K.; Fan, John C. C., Efficient light emitting diodes and lasers.
    상세보기
  24. Burgess R. Johnson ; Wei Yang, Efficient solid-state light emitting device with excited phosphors for producing a visible light output.
    상세보기
  25. Veenstra, Thomas J.; Vander Kuyl, Paul T.; Weeda, Matthew S.; Lanser, Michael L.; Israels, Kyle A.; Mulder, Jason R.; Vander Pol, Mark W., Electrical device having boardless electrical component mounting arrangement.
    상세보기
  26. Oh, Tchang-Hun; Choi, Hong K.; Tsaur, Bor-Yeu; Fan, John C. C.; Liao, Shirong; Narayan, Jagdish, Electrode for p-type gallium nitride-based semiconductors.
    상세보기
  27. Kidoguchi Isao,JPX ; Adachi Hideto,JPX ; Ishibashi Akihiko,JPX ; Ohnaka Kiyoshi,JPX ; Ban Yuzaburo,JPX ; Kubo Minoru,JPX, Fabrication of semiconductor light-emitting device.
    상세보기
  28. Mulder, Jason R.; Boetsma, Justin Philip, Flexible light pipe.
    상세보기
  29. Chien, Fen-Ren; Hon, Schang-Jing, Flip-chip light-emitting device.
    상세보기
  30. Chua, Soo Jin; Li, Peng; Hao, Maosheng; Zhang, Ji, Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD).
    상세보기
  31. Chua, Soo Jin; Li, Peng; Hao, Maosheng; Zhang, Ji, Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD).
    상세보기
  32. Stockman, Stephen A., Forming semiconductor structures including activated acceptors in buried p-type III-V layers.
    상세보기
  33. Yang, Long, GaN LEDs with improved area and method for making the same.
    상세보기
  34. Yang, Long, GaN LEDs with improved area and method for making the same.
    상세보기
  35. Yukio Shakuda JP, GaN semiconductor light emitting device having a group II-VI substrate.
    상세보기
  36. Shakuda Yukio,JPX, GaN semiconductor light emitting device having a group III-V substrate.
    상세보기
  37. Wang, Tao, GaN structures having low dislocation density and methods of manufacture.
    상세보기
  38. Kim, Seong Jae, Gallium nitride based light emitting diode.
    상세보기
  39. Kim, Seong Jae, Gallium nitride based light emitting diode.
    상세보기
  40. Kawagoe,Kimihiro, Gallium nitride compound semiconductor element.
    상세보기
  41. Srivastava Alok Mani ; Beers William Winder, Green-light emitting phosphors and light sources using the same.
    상세보기
  42. Edmond John Adam ; Kong Hua-Shuang ; Doverspike Kathleen Marie ; Leonard Michelle Turner, Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure.
    상세보기
  43. Edmond John Adam ; Kong Hua-Shuang ; Doverspike Kathleen Marie ; Leonard Michelle Turner, Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure.
    상세보기
  44. Edmond, John Adam; Kong, Hua-Shuang; Doverspike, Kathleen Marie; Leonard, Michelle Turner, Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure.
    상세보기
  45. John Adam Edmond ; Hua-Shuang Kong ; Kathleen Marie Doverspike ; Michelle Turner Leonard, Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure.
    상세보기
  46. John Adam Edmond ; Hua-Shuang Kong ; Kathleen Marie Doverspike ; Michelle Turner Leonard, Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure.
    상세보기
  47. Iyechika Yasushi,JPX ; Ono Yoshinobu,JPX ; Takada Tomoyuki,JPX ; Inui Katsumi,JPX, Group III-V compound semiconductor and light-emitting device.
    상세보기
  48. Boris N. Sverdlov, Group III-V nitride laser devices with cladding layers to suppress defects such as cracking.
    상세보기
  49. Sverdlov Boris N., Group III-V nitride laser devices with cladding layers to suppress defects such as cracking.
    상세보기
  50. D'Evelyn,Mark Philip; Cao,Xian An; Zhang,Anping; LeBoeuf,Steven Francis; Hong,Huicong; Park,Dong Sil; Narang,Kristi Jean, Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates.
    상세보기
  51. Udagawa, Takashi, Group-III nitride semiconductor light-emitting device.
    상세보기
  52. Armitage, Robert D.; Weber, Eicke R., Hafnium nitride buffer layers for growth of GaN on silicon.
    상세보기
  53. Wang, Gang; Li, Yi-Qun, High CRI white light emitting devices and drive circuitry.
    상세보기
  54. Ibbetson, James; Thibeault, Brian, High efficiency light emitters with reduced polarization-induced charges.
    상세보기
  55. Barnett, Thomas J.; Tillinghast, Sean P., High power LED.
    상세보기
  56. Barnett, Thomas J.; Tillinghast, Sean P., High power light emitting diode.
    상세보기
  57. Chuang, Chih-Wei; Lin, Chao-Kun; Yang, Long; Hamaguchi, Norihito, High temperature gold-free wafer bonding for light emitting diodes.
    상세보기
  58. Flynn, Jeffrey S.; Brandes, George R.; Vaudo, Robert P., High voltage switching devices and process for forming same.
    상세보기
  59. Flynn, Jeffrey S.; Brandes, George R.; Vaudo, Robert P., High voltage switching devices and process for forming same.
    상세보기
  60. Flynn, Jeffrey S.; Brandes, George R.; Vaudo, Robert P., High voltage switching devices and process for forming same.
    상세보기
  61. Flynn, Jeffrey S.; Brandes, George R.; Vaudo, Robert P., High voltage switching devices and process for forming same.
    상세보기
  62. Nikolaev, Audrey E.; Melnik, Yuri V.; Vassilevski, Konstantin V.; Dmitriev, Vladimir A., III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer.
    상세보기
  63. Audrey E. Nikolaev RU; Yuri V. Melnik RU; Konstantin V. Vassilevski GB; Vladimir A. Dmitriev, III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer.
    상세보기
  64. Yang, Haitao, LED based lamp and light emitting signage.
    상세보기
  65. Chen, Zhen, LED having a low defect N-type layer that has grown on a silicon substrate.
    상세보기
  66. Li, Yi-Qun, LED lighting arrangement including light emitting phosphor.
    상세보기
  67. Li, Yi-Qun, LED lighting arrangement including light emitting phosphor.
    상세보기
  68. Chen, Zhen, LED on silicon substrate using zinc-sulfide as buffer layer.
    상세보기
  69. Leatherdale,Catherine A.; Ouderkirk,Andrew J.; Lu,Dong, LED package with compound converging optical element.
    상세보기
  70. Leatherdale, Catherine A.; Ouderkirk, Andrew J.; Lu, Dong, LED package with converging optical element.
    상세보기
  71. Conner,Arlie R.; Leatherdale,Catherine A.; Ouderkirk,Andrew J.; Wheatley,John A., LED package with non-bonded optical element.
    상세보기
  72. Yang, Haitao; Li, Yi-Qun, LED spotlight.
    상세보기
  73. Chen, Zhen; Fu, Yi, LED that has bounding silicon-doped regions on either side of a strain release layer.
    상세보기
  74. Lester, Steven; Ramer, Jeff; Wu, Jun; Zhang, Ling, LED with improved injection efficiency.
    상세보기
  75. Lester, Steven; Ramer, Jeff; Wu, Jun; Zhang, Ling, LED with improved injection efficiency.
    상세보기
  76. Lester, Steven; Ramer, Jeff; Wu, Jun; Zhang, Ling, LED with improved injection efficiency.
    상세보기
  77. Li, Yi-Qun; Collier, Ian, LED-based lamps.
    상세보기
  78. Edwards, Charles, LED-based large area display.
    상세보기
  79. Edwards, Charles Owen; Wang, Gang; Li, Yi-Qun, LED-based light emitting systems and devices with color compensation.
    상세보기
  80. Li, Yi-Qun; Su, Hwa (Harik); Yang, Chienli (Jeff), LED-based light sources for light emitting devices and lighting arrangements with photoluminescence wavelength conversion.
    상세보기
  81. Li, Yi-Qun; Su, Hwa (Harik); Yang, Chienli (Jeff), LED-based light sources for light emitting devices and lighting arrangements with photoluminescence wavelength conversion.
    상세보기
  82. Li, Yi-Qun; Su, Hwa (Harik); Yang, Chienli (Jeff), LED-based light sources for light emitting devices and lighting arrangements with photoluminescence wavelength conversion.
    상세보기
  83. Lionel Monty Levinson ; Alok Mani Srivastava, LIGHT EMITTING DEVICE WITH BA2MGSI2O7:EU2+, BA2SIO4:EU2+, OR (SRXCAY BA1-X-Y)(A1ZGA1-Z)2SR:EU2+PHOSPHORS.
    상세보기
  84. Chen, Zhen; Fenwick, William; Lester, Steve, Laterally contacted blue LED with superlattice current spreading layer.
    상세보기
  85. Chen, Zhen; Fu, Yi, Led that has bounding silicon-doped regions on either side of a strain release layer.
    상세보기
  86. Chang, Chun-Yen; Yang, Tsung Hsi, Light emitter device.
    상세보기
  87. Shimizu, Yoshinori; Sakano, Kensho; Noguchi, Yasunobu; Moriguchi, Toshio, Light emitting device and display.
    상세보기
  88. Shimizu, Yoshinori; Sakano, Kensho; Noguchi, Yasunobu; Moriguchi, Toshio, Light emitting device and display.
    상세보기
  89. Shimizu, Yoshinori; Sakano, Kensho; Noguchi, Yasunobu; Moriguchi, Toshio, Light emitting device and display.
    상세보기
  90. Shimizu, Yoshinori; Sakano, Kensho; Noguchi, Yasunobu; Moriguchi, Toshio, Light emitting device and display.
    상세보기
  91. Shimizu, Yoshinori; Sakano, Kensho; Noguchi, Yasunobu; Moriguchi, Toshio, Light emitting device and display.
    상세보기
  92. Shimizu, Yoshinori; Sakano, Kensho; Noguchi, Yasunobu; Moriguchi, Toshio, Light emitting device and display.
    상세보기
  93. Shimizu, Yoshinori; Sakano, Kensho; Noguchi, Yasunobu; Moriguchi, Toshio, Light emitting device and display.
    상세보기
  94. Shimizu, Yoshinori; Sakano, Kensho; Noguchi, Yasunobu; Moriguchi, Toshio, Light emitting device and display.
    상세보기
  95. Shimizu, Yoshinori; Sakano, Kensho; Noguchi, Yasunobu; Moriguchi, Toshio, Light emitting device and display comprising a plurality of light emitting components on mount.
    상세보기
  96. Shimizu, Yoshinori; Sakano, Kensho; Noguchi, Yasunobu; Moriguchi, Toshio, Light emitting device and display comprising a plurality of light emitting components on mount.
    상세보기
  97. Shimizu, Yoshinori; Sakano, Kensho; Noguchi, Yasunobu; Moriguchi, Toshio, Light emitting device with blue light LED and phosphor components.
    상세보기
  98. Shimizu, Yoshinori; Sakano, Kensho; Noguchi, Yasunobu; Moriguchi, Toshio, Light emitting device with blue light LED and phosphor components.
    상세보기
  99. Shimizu,Yoshinori; Sakano,Kensho; Noguchi,Yasunobu; Moriguchi,Toshio, Light emitting device with blue light LED and phosphor components.
    상세보기
  100. Shimizu,Yoshinori; Sakano,Kensho; Noguchi,Yasunobu; Moriguchi,Toshio, Light emitting device with blue light LED and phosphor components.
    상세보기
  101. Shimizu,Yoshinori; Sakano,Kensho; Noguchi,Yasunobu; Moriguchi,Toshio, Light emitting device with blue light LED and phosphor components.
    상세보기
  102. Shimizu,Yoshinori; Sakano,Kensho; Noguchi,Yasunobu; Moriguchi,Toshio, Light emitting device with blue light led and phosphor components.
    상세보기
  103. Shimizu,Yoshinori; Sakano,Kensho; Noguchi,Yasunobu; Moriguchi,Toshio, Light emitting device with blue light led and phosphor components.
    상세보기
  104. Shimizu,Yoshinori; Sakano,Kensho; Noguchi,Yasunobu; Moriguchi,Toshio; Nakanishi,Eiji, Light emitting device with blue light led and phosphor components.
    상세보기
  105. Kunisato Tatsuya,JPX ; Kano Takashi,JPX ; Ueda Yasuhiro,JPX ; Matsushita Yasuhiko,JPX ; Yagi Katsumi,JPX, Light emitting device with cap layer.
    상세보기
  106. Soules Thomas Frederick ; Beers William Winder ; Srivastava Alok Mani ; Levinson Lionel Monty ; Duggal Anil Raj, Light emitting device with phosphor composition.
    상세보기
  107. Li, Yi-Qun, Light emitting device with phosphor wavelength conversion.
    상세보기
  108. Motoki Kensaku,JPX ; Shimazu Mitsuru,JPX ; Miura Yoshiki,JPX, Light emitting device, wafer for light emitting device, and method of preparing the same.
    상세보기
  109. Motoki Kensaku,JPX ; Shimazu Mitsuru,JPX ; Miura Yoshiki,JPX, Light emitting device, wafer for light emitting device, and method of preparing the same.
    상세보기
  110. Yang, Long; Fenwick, Will, Light emitting devices having dislocation density maintaining buffer layers.
    상세보기
  111. Lin, Chao-Kun; Yan, Li; Chuang, Chih-Wei, Light emitting devices having light coupling layers.
    상세보기
  112. Yan, Li; Lin, Chao-Kun; Chuang, Chih-Wei, Light emitting devices having light coupling layers.
    상세보기
  113. Yan, Li; Lin, Chao-Kun; Chuang, Chih-Wei, Light emitting devices having light coupling layers with recessed electrodes.
    상세보기
  114. Li, Yi-Qun, Light emitting diode (LED) based lighting systems.
    상세보기
  115. Li, Yi-Qun, Light emitting diode (LED) based lighting systems.
    상세보기
  116. Li, Yi-Qun, Light emitting diode lighting system.
    상세보기
  117. Ramer, Jeff; Ting, Steve, Light emitting regions for use with light emitting devices.
    상세보기
  118. Wong, William S.; Kneissl, Michael A.; Yang, Zhihong; Teepe, Mark; Knollenberg, Cliff, Light emitting structure including high-al content MQWH.
    상세보기
  119. Fleischmann, Eric L.; DeVries, Nick J.; Veenstra, Thomas J.; Judge, Michael K., Light for vehicles.
    상세보기
  120. Judge, Michael K., Light for vehicles.
    상세보기
  121. Veenstra, Thomas J.; Hiemstra, David L.; Heupel, Scott C., Light module.
    상세보기
  122. Tysoe,Steven Alfred; D'evelyn,Mark Philip; Mondello,Frank John, Light-based system for detecting analytes.
    상세보기
  123. Manabe Katsuhide,JPX ; Kato Hisaki,JPX ; Sassa Michinari,JPX ; Yamazaki Shiro,JPX ; Asai Makoto,JPX ; Shibata Naoki,JPX ; Koike Masayoshi,JPX, Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity.
    상세보기
  124. Manabe,Katsuhide; Kato,Hisaki; Sassa,Michinari; Yamazaki,Shiro; Asai,Makoto; Shibata,Naoki; Koike,Masayoshi, Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity.
    상세보기
  125. Fan, John C. C.; Choi, Hong K.; Oh, Tchang-Hun; Chen, Jyh Chia; Narayan, Jagdish, Light-emitting diode device geometry.
    상세보기
  126. Nakamura Shuji,JPX ; Mukai Takashi,JPX ; Iwasa Naruhito,JPX, Light-emitting gallium nitride-based compound semiconductor device.
    상세보기
  127. Nakamura Shuji,JPX ; Mukai Takashi,JPX ; Iwasa Naruhito,JPX, Light-emitting gallium nitride-based compound semiconductor device.
    상세보기
  128. Nakamura Shuji,JPX ; Mukai Takashi,JPX ; Iwasa Naruhito,JPX, Light-emitting gallium nitride-based compound semiconductor device.
    상세보기
  129. Nakamura Shuji,JPX ; Mukai Takashi,JPX ; Iwasa Naruhito,JPX, Light-emitting gallium nitride-based compound semiconductor device.
    상세보기
  130. Shuji Nakamura JP; Takashi Mukai JP; Naruhito Iwasa JP, Light-emitting gallium nitride-based compound semiconductor device.
    상세보기
  131. Ando,Masanobu; Nakai,Masahito; Uemura,Toshiya; Nakayama,Masaaki, Light-emitting semiconductor device and a method of manufacturing it.
    상세보기
  132. Koike,Masayoshi; Asami,Shinya, Light-emitting semiconductor device using Group III nitride compound.
    상세보기
  133. Manabe Katsuhide,JPX ; Kato Hisaki,JPX ; Sassa Michinari,JPX ; Yamazaki Shiro,JPX ; Asai Makoto,JPX ; Shibata Naoki,JPX ; Koike Masayoshi,JPX, Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities.
    상세보기
  134. Koike Masayoshi,JPX ; Asami Shinya,JPX, Light-emitting semiconductor device using group III nitride compound.
    상세보기
  135. Koike Masayoshi,JPX ; Asami Shinya,JPX, Light-emitting semiconductor device using group III nitride compound.
    상세보기
  136. Koike, Masayoshi; Asami, Shinya, Light-emitting semiconductor device using group III nitride compound.
    상세보기
  137. Manabe, Katsuhide; Kato, Hisaki; Sassa, Michinari; Yamazaki, Shiro; Asai, Makoto; Shibata, Naoki; Koike, Masayoshi, Light-emitting semiconductor device using group III nitrogen compound.
    상세보기
  138. Manabe,Katsuhide; Kato,Hisaki; Sassa,Michinari; Yamazaki,Shiro; Asai,Makoto; Shibata,Naoki; Koike,Masayoshi, Light-emitting semiconductor device using group III nitrogen compound.
    상세보기
  139. Manabe,Katsuhide; Kato,Hisaki; Sassa,Michinari; Yamazaki,Shiro; Asai,Makoto; Shibata,Naoki; Koike,Masayoshi, Light-emitting semiconductor device using group III nitrogen compound.
    상세보기
  140. Hahn, Berthold; Jacob, Ulrich; Lugauer, Hans-Jürgen; Mundbrod-Vangerow, Manfred, Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same.
    상세보기
  141. Reeh, Ulrike; Höhn, Klaus; Stath, Norbert; Waitl, Günter; Schlotter, Peter; Schneider, Jürgen; Schmidt, Ralf, Light-radiating semiconductor component with a luminescence conversion element.
    상세보기
  142. Reeh, Ulrike; Höhn, Klaus; Stath, Norbert; Waitl, Günter; Schlotter, Peter; Schneider, Jürgen; Schmidt, Ralf, Light-radiating semiconductor component with a luminescence conversion element.
    상세보기
  143. Reeh,Ulrike; H철hn,Klaus; Stath,Norbert; Waitl,G체nter; Schlotter,Peter; Schneider,J체rgen; Schmidt,Ralf, Light-radiating semiconductor component with a luminescence conversion element.
    상세보기
  144. Reeh,Ulrike; H철hn,Klaus; Stath,Norbert; Waitl,G체nter; Schlotter,Peter; Schneider,J체rgen; Schmidt,Ralf, Light-radiating semiconductor component with a luminescence conversion element.
    상세보기
  145. Reeh,Ulrike; H？hn,Klaus; Stath,Norbert; Waitl,G？nter; Schlotter,Peter; Schneider,J？rgen; Schmidt,Ralf, Light-radiating semiconductor component with a luminescence conversion element.
    상세보기
  146. Reeh,Ulrike; H��hn,Klaus; Stath,Norbert; Waitl,G��nter; Schlotter,Peter; Schneider,J��rgen; Schmidt,Ralf, Light-radiating semiconductor component with a luminescene conversion element.
    상세보기
  147. Kunisato Tatsuya,JPX ; Kano Takashi,JPX ; Ueda Yasuhiro,JPX ; Matsushita Yasuhiko,JPX ; Yagi Katsumi,JPX, Manufacturing method of light emitting device.
    상세보기
  148. Kunisato, Tatsuya; Kano, Takashi; Ueda, Yasuhiro; Matsushita, Yasuhiko; Yagi, Katsumi, Manufacturing method of light emitting device.
    상세보기
  149. Yuan, Xianglong; Chai, Binghua; Li, Yi-Qun, Materials for photoluminescence wavelength converted solid-state light emitting devices and arrangements.
    상세보기
  150. Kolodzey James ; Olowolafe Johnson, Metal-insulator-semiconductor field effect transistor having an oxidized aluminum nitride gate insulator formed on a gallium nitride or silicon substrate.
    상세보기
  151. Kolodzey, James; Olowolafe, Johnson, Metal-insulator-semiconductor field effect transistor having an oxidized aluminum nitride gate insulator formed on a gallium nitride or silicon substrate, and method of making the same.
    상세보기
  152. Wong,William S.; Kneissl,Michael A.; Teepe,Mark, Method for controlling the structure and surface qualities of a thin film and product produced thereby.
    상세보기
  153. Karpov, Sergey; Usikov, Alexander; Helava, Heikki I.; Tsvetkov, Denis; Dmitriev, Vladimir A., Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device.
    상세보기
  154. Bader, Stefan; Eisert, Dominik; Hahn, Berthold; Härle, Volker, Method for fabricating a semiconductor component based on GaN.
    상세보기
  155. Bader, Stefan; Eisert, Dominik; Hahn, Berthold; Härle, Volker, Method for fabricating a semiconductor component based on GaN.
    상세보기
  156. Bader, Stefan; Eisert, Dominik; Hahn, Berthold; Härle, Volker, Method for fabricating a semiconductor component based on GaN.
    상세보기
  157. Nikolaev, Audrey E.; Melnik, Yuri V.; Vassilevski, Konstantin V.; Dmitriev, Vladimir A., Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques.
    상세보기
  158. Nikolaev, Audrey E.; Melnik, Yuri V.; Vassilevski, Konstantin V.; Dmitriev, Vladimir A., Method for growing p-n heterojunction-based structures utilizing HVPE techniques.
    상세보기
  159. Audrey E. Nikolaev RU; Yuri V. Melnik RU; Konstantin V. Vassilevski GB; Vladimir A. Dmitriev, Method for growing p-n homojunction-based structures utilizing HVPE techniques.
    상세보기
  160. Nikolaev, Audrey E.; Melnik, Yuri V.; Vassilevski, Konstantin V.; Dmitriev, Vladimir A., Method for growing p-type III-V compound material utilizing HVPE techniques.
    상세보기
  161. Kawai Hiroji,JPX ; Asatsuma Tsunenori,JPX ; Funato Kenji,JPX, Method for growing single crystal III-V compound semiconductor layers on non single crystal III-V Compound semiconductor.
    상세보기
  162. Sasaki Kazuaki,JPX, Method for producing semiconductor light-emitting device with undoped spacer layer.
    상세보기
  163. Lester, Steven D., Method for reducing stress in epitaxial growth.
    상세보기
  164. Rice, Peter; Hon, Schang-Jing; Wang, Alexander; O'Connor, Kevin, Method for reducing the resistivity of p-type II-VI and III-V semiconductors.
    상세보기
  165. Sverdlov Boris N. ; Major ; Jr. Jo Stephen, Method of doping gan layers p-type for device fabrication.
    상세보기
  166. Wong, William S.; Kneissl, Michael A.; Yang, Zhihong; Teepe, Mark; Knollenberg, Cliff, Method of manufacturing a semiconductor device including a superlattice strain relief layer.
    상세보기
  167. H？hn,Klaus; Debray,Alexandra; Schlotter,Peter; Schmidt,Ralf; Schneider,J？rgen, Method of producing a wavelength-converting casting composition.
    상세보기
  168. Edwards, Charles, Methods and apparatus for implementing color consistency in remote wavelength conversion.
    상세보기
  169. Koike Masayoshi,JPX ; Nagai Seiji,JPX ; Yamasaki Shiro,JPX ; Murakami Masanori,JPX ; Tsukui Katsuyuki,JPX ; Ishikawa Hidenori,JPX, Methods of forming electrodes on gallium nitride group compound semiconductors.
    상세보기
  170. McIntosh Forrest Gregg ; Bedair Salah Mohamed ; El-Masry Nadia Ahmed ; Roberts John Claassen, Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flows.
    상세보기
  171. Chua, Christopher L.; Yang, Zhihong; Johnson, Noble M., Mixed alloy defect redirection region and devices including same.
    상세보기
  172. Ohlsson, Jonas; Svensson, Carl Patrik Theodor, Multicolor LED and method of fabricating thereof.
    상세보기
  173. Li, Yi-Qun; Wang, Gang; Chen, Li-De, Multiple-chip excitation systems for white light emitting diodes (LEDs).
    상세보기
  174. Li, Yi-Qun; Wang, Gang; Chen, Li-De, Multiple-chip excitation systems for white light emitting diodes (LEDs).
    상세보기
  175. Chen, Zhen; Fu, Yi, N-type gallium-nitride layer having multiple conductive intervening layers.
    상세보기
  176. Hayashi, Nobuhiko; Goto, Takenori; Kano, Takashi; Nomura, Yasuhiko, Nitride based semiconductor light emitting device and nitride based semiconductor laser device.
    상세보기
  177. Maruska H. Paul ; Zhu Long De ; Norris Peter E., Nitride based semiconductors and devices.
    상세보기
  178. Kozaki, Tokuya, Nitride semiconductor device.
    상세보기
  179. Kozaki, Tokuya, Nitride semiconductor device.
    상세보기
  180. Kozaki, Tokuya, Nitride semiconductor device.
    상세보기
  181. Kozaki, Tokuya, Nitride semiconductor device.
    상세보기
  182. Kozaki, Tokuya, Nitride semiconductor device.
    상세보기
  183. Kozaki, Tokuya, Nitride semiconductor device.
    상세보기
  184. Kozaki, Tokuya, Nitride semiconductor device.
    상세보기
  185. Kozaki,Tokuya, Nitride semiconductor device.
    상세보기
  186. Nagahama, Shinichi; Senoh, Masayuki; Nakamura, Shuji, Nitride semiconductor device.
    상세보기
  187. Nagahama,Shinichi; Senoh,Masayuki; Nakamura,Shuji, Nitride semiconductor device.
    상세보기
  188. Nakamura, Shuji; Mukai, Takashi; Tanizawa, Koji; Mitani, Tomotsugu; Marui, Hiroshi, Nitride semiconductor device.
    상세보기
  189. Nakamura,Shuji; Mukai,Takashi; Tanizawa,Koji; Mitani,Tomotsugu; Marui,Hiroshi, Nitride semiconductor device.
    상세보기
  190. Tanizawa, Koji, Nitride semiconductor device.
    상세보기
  191. Tanizawa, Koji, Nitride semiconductor device.
    상세보기
  192. Tanizawa, Koji, Nitride semiconductor device.
    상세보기
  193. Tanizawa, Koji, Nitride semiconductor device.
    상세보기
  194. Nagahama, Shinichi; Nakamura, Shuji, Nitride semiconductor device and manufacturing method thereof.
    상세보기
  195. Nagahama,Shinichi; Nakamura,Shuji, Nitride semiconductor device and manufacturing method thereof.
    상세보기
  196. Kozaki, Tokuya, Nitride semiconductor device with improved lifetime and high output power.
    상세보기
  197. Kozaki, Tokuya; Sano, Masahiko; Nakamura, Shuji; Nagahama, Shinichi, Nitride semiconductor laser device.
    상세보기
  198. Kozaki,Tokuya; Sano,Masahiko; Nakamura,Shuji; Nagahama,Shinichi, Nitride semiconductor laser device.
    상세보기
  199. Kozaki,Tokuya; Sano,Masahiko; Nakamura,Shuji; Nagahama,Shinichi, Nitride semiconductor laser device.
    상세보기
  200. Nakamura, Shuji; Nagahama, Shinichi; Iwasa, Naruhito; Kiyoku, Hiroyuki, Nitride semiconductor light-emitting device.
    상세보기
  201. Nagahama, Shinichi; Senoh, Masayuki; Nakamura, Shuji, Nitride semiconductor light-emitting devices.
    상세보기
  202. Nakamura, Shuji; Nagahama, Shinichi; Iwasa, Naruhito, Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor.
    상세보기
  203. Nakamura,Shuji; Nagahama,Shinichi; Iwasa,Naruhito, Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor.
    상세보기
  204. Nakamura,Shuji; Nagahama,Shinichi; Iwasa,Naruhito, Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor.
    상세보기
  205. Sugiura Lisa,JPX ; Suzuki Mariko,JPX ; Itaya Kazuhiko,JPX ; Fujimoto Hidetoshi,JPX ; Nishio Johji,JPX ; Rennie John,JPX ; Sugawara Hideto,JPX, Nitride system semiconductor device and method for manufacturing the same.
    상세보기
  206. Lin, Chao Kun, Non-reactive barrier metal for eutectic bonding process.
    상세보기
  207. Fenwick, William E.; Ramer, Jeff, Nucleation of aluminum nitride on a silicon substrate using an ammonia preflow.
    상세보기
  208. Fenwick, William E.; Ramer, Jeff, Nucleation of aluminum nitride on a silicon substrate using an ammonia preflow.
    상세보기
  209. Veenstra, Thomas J.; Mulder, Jason R.; Fleischmann, Eric L., Overmolded circuit board and method.
    상세보기
  210. Audrey E. Nikolaev RU; Yuri V. Melnik RU; Konstantin V. Vassilevski GB; Vladimir A. Dmitriev, P-N homojunction-based structures utilizing HVPE growth III-V compound layers.
    상세보기
  211. Nikolaev, Audrey E.; Melnik, Yuri V.; Vassilevski, Konstantin V.; Dmitriev, Vladimir A., P-n heterojunction-based structures utilizing HVPE grown III-V compound layers.
    상세보기
  212. Ting, Steve, P-type doping layers for use with light emitting devices.
    상세보기
  213. Ting, Steve, P-type doping layers for use with light emitting devices.
    상세보기
  214. Ting, Steve, P-type doping layers for use with light emitting devices.
    상세보기
  215. Li, Yi-Qun; Yang, Haitao, Phosphor based authentication system.
    상세보기
  216. Yang, Haitao; Li, Yi-Qun, Photoluminescence color display.
    상세보기
  217. Li, Yi-Qun; Dong, Yi; Shan, Wei, Photoluminescence color display comprising quantum dots material and a wavelength selective filter that allows passage of excitation radiation and prevents passage of light generated by photoluminescence materials.
    상세보기
  218. Edwards, Charles; Li, Yi-Qun, Photoluminescence wavelength conversion components.
    상세보기
  219. Herold Wolf-Dietrich,DEX ; Kuerschner Ralf,DEX ; Koran Peter,DEX, Photopolymerization apparatus.
    상세보기
  220. Maruska H. Paul, Planar technology for producing light-emitting devices.
    상세보기
  221. Weber, Eicke R.; Subramanya, Sudhir G.; Kim, Yihwan; Kruger, Joachim, Process for growing epitaxial gallium nitride and composite wafers.
    상세보기
  222. Nikolaev Andrey E.,RUX ; Melnik Yuri V.,RUX ; Vassilevski Konstantin V.,RUX ; Dmitriev Vladimir A., Process for producing III-V nitride pn junctions and p-i-n junctions.
    상세보기
  223. Bader, Stefan; Hahn, Berthold; Härle, Volker; Lugauer, Hans-Jürgen; Mundbrod-Vangerow, Manfred; Eisert, Dominik, Radiation-emitting semiconductor element and method for producing the same.
    상세보기
  224. D'Evelyn, Mark Philip; Cao, Xian An; Zhang, Anping; LeBoeuf, Steven Francis; Hong, Huicong; Park, Dong Sil; Narang, Kristi Jean, Resonant cavity light emitting devices and associated method.
    상세보기
  225. Edmond,John Adam; Thibeault,Brian; Slater, Jr.,David Beardsley; Negley,Gerald H.; Mieczkowski,Van Allen, Robust Group III light emitting diode for high reliability in standard packaging applications.
    상세보기
  226. Iyechika Yasushi,JPX ; Ono Yoshinobu,JPX ; Takada Tomoyuki,JPX ; Inui Katsumi,JPX, Semiconductor compound electrode material containing calcium and a noble metal.
    상세보기
  227. Yanamoto, Tomoya, Semiconductor device.
    상세보기
  228. Yanamoto,Tomoya, Semiconductor device.
    상세보기
  229. Ohba Yasuo,JPX ; Hatano Ako,JPX, Semiconductor device and method of fabricating the same.
    상세보기
  230. Ohba, Yasuo; Hatano, Ako, Semiconductor device and method of fabricating the same.
    상세보기
  231. Ohba Yasuo,JPX ; Hatano Ako,JPX, Semiconductor device including quaternary buffer layer with pinholes.
    상세보기
  232. Shakuda Yukio,JPX, Semiconductor light emitting device.
    상세보기
  233. Shakuda, Yukio, Semiconductor light emitting device and manufacturing method therefor.
    상세보기
  234. Shakuda, Yukio, Semiconductor light emitting device and manufacturing method therefor.
    상세보기
  235. Shakuda,Yukio, Semiconductor light emitting device and manufacturing method therefor.
    상세보기
  236. Shakuda, Yukio, Semiconductor light emitting device and method for producing the same.
    상세보기
  237. Shakuda,Yukio, Semiconductor light emitting device and method for producing the same.
    상세보기
  238. Hideto Sugawara JP; Koichi Nitta JP, Semiconductor light emitting element.
    상세보기
  239. Sasaki Kazuaki,JPX, Semiconductor light-emitting device and method for producing the same.
    상세보기
  240. Kidoguchi Isao,JPX ; Adachi Hideto,JPX ; Ishibashi Akihiko,JPX ; Ohnaka Kiyoshi,JPX ; Ban Yuzaburo,JPX ; Kubo Minoru,JPX, Semiconductor light-emitting device and production method thereof.
    상세보기
  241. Kidoguchi Isao,JPX ; Adachi Hideto,JPX ; Ishibashi Akihiko,JPX ; Ohnaka Kiyoshi,JPX ; Ban Yuzaburo,JPX ; Kubo Minoru,JPX, Semiconductor light-emitting device and production method thereof.
    상세보기
  242. Osinski, Marek; Eliseev, Petr, Semiconductor nitride structures.
    상세보기
  243. Lester, Steven D.; Chuang, Chih-Wei, Series connected segmented LED.
    상세보기
  244. Lester, Steven D.; Chuang, Chih-Wei, Series connected segmented LED.
    상세보기
  245. Lester, Steven D.; Chuang, Chih-Wei, Series connected segmented LED.
    상세보기
  246. Baretz, Bruce H.; Tischler, Michael A., Solid state white light emitter and display using same.
    상세보기
  247. Baretz, Bruce H.; Tischler, Michael A., Solid state white light emitter and display using same.
    상세보기
  248. Baretz, Bruce; Tischler, Michael A., Solid state white light emitter and display using same.
    상세보기
  249. Baretz, Bruce; Tischler, Michael A., Solid state white light emitter and display using same.
    상세보기
  250. Baretz, Bruce; Tischler, Michael A., Solid state white light emitter and display using same.
    상세보기
  251. Baretz, Bruce; Tischler, Michael A., Solid state white light emitter and display using same.
    상세보기
  252. Lee, Hyung-Chul; Yang, Haitao; Edwards, Charles; Li, Yi-Qun, Solid-state lamps with improved radial emission and thermal performance.
    상세보기
  253. Yang, Haitao; Lee, Hyung-Chul; Edwards, Charles; Li, Yi-Qun, Solid-state lamps with improved radial emission and thermal performance.
    상세보기
  254. Yang, Haitao; Edwards, Charles; Collier, Ian, Solid-state lamps with omnidirectional emission patterns.
    상세보기
  255. Yuan, Xianglong; Melman, Jonathan; Dai, Bing; Wang, Gang; Edwards, Charles, Solid-state light emitting devices and signage with photoluminescence wavelength conversion.
    상세보기
  256. Li, Yi-Qun; Melman, Jonathan; Yuan, Xianglong; Dai, Bing; Wang, Gang; Edwards, Charles, Solid-state light emitting devices with photoluminescence wavelength conversion.
    상세보기
  257. McIntosh Forrest Gregg (Raleigh NC) Bedair Salah Mohamed (Raleigh NC) El-Masry Nadia Ahmed (Raleigh NC) Roberts John Claassen (Raleigh NC), Stacked quantum well aluminum indium gallium nitride light emitting diodes.
    상세보기
  258. Nagahama, Shinichi; Senoh, Masayuki; Nakamura, Shuji, Superlattice nitride semiconductor LD device.
    상세보기
  259. Wong, William S.; Kneissl, Michael A.; Yang, Zhihong; Teepe, Mark; Knollenberg, Cliff, Superlattice strain relief layer for semiconductor devices.
    상세보기
  260. Lin, Chao Kun, Thin-film LED with P and N contacts electrically isolated from the substrate.
    상세보기
  261. Lin, Chao-Kun, Thin-film LED with P and N contacts electrically isolated from the substrate.
    상세보기
  262. Lin, Chao-Kun, Thin-film LED with P and N contacts electrically isolated from the substrate.
    상세보기
  263. Lin, Chao-Kun, Thin-film LED with p and n contacts electrically isolated from the substrate.
    상세보기
  264. Edmond, John A.; Slater, Jr., David B.; Bergmann, Michael J., Transparent ohmic contacts on light emitting diodes with carrier substrates.
    상세보기
  265. Edmond, John A.; Slater, Jr., David B.; Bergmann, Michael J., Transparent ohmic contacts on light emitting diodes with growth substrates.
    상세보기
  266. Cui, Jie, Trenched substrate for crystal growth and wafer bonding.
    상세보기
  267. Chen, Wei-Yo; Chen, Yen-Wen; Hsu, Shu-Ting; Lee, Tsung Xian, Vertical ACLED structure.
    상세보기
  268. Doverspike, Kathleen Marie; Edmond, John Adam; Kong, Hua-shuang; Dieringer, Heidi Marie; Slater, Jr., David B., Vertical geometry InGaN LED.
    상세보기
  269. Doverspike, Kathleen Marie; Edmond, John Adam; Kong, Hua-shuang; Dieringer, Heidi Marie; Slater, Jr., David B., Vertical geometry InGaN LED.
    상세보기
  270. Doverspike, Kathleen Marie; Edmond, John Adam; Kong, Hua-shuang; Dieringer, Heidi Marie; Slater, Jr., David B., Vertical geometry InGaN LED.
    상세보기
  271. Doverspike,Kathleen Marie; Edmond,John Adam; Kong,Hua shuang; Dieringer,Heidi Marie; Slater, Jr.,David B., Vertical geometry InGaN LED.
    상세보기
  272. Kathleen Marie Doverspike ; John Adam Edmond ; Hua-shuang Kong ; Heidi Marie Dieringer ; David B. Slater, Jr., Vertical geometry ingan LED.
    상세보기
  273. Dai, Bing; Yuan, Xianglong; Wang, Gang; Edwards, Charles; Caruso, James, Wavelength conversion component.
    상세보기
  274. Huang, Diyun; Dai, Bing; Edwards, Charles, Wavelength conversion component having photo-luminescence material embedded into a hermetic material for remote wavelength conversion.
    상세보기
  275. Dai, Bing; Yuan, Xianglong; Wang, Gang; Edwards, Charles; Caruso, James, Wavelength conversion component with a diffusing layer.
    상세보기
  276. Deeman, Neil; Dai, Bing; Edwards, Charles, Wavelength conversion component with improved protective characteristics for remote wavelength conversion.
    상세보기
  277. Dai, Bing; Yuan, Xianglong; Wang, Gang; Edwards, Charles; Caruso, James, Wavelength conversion component with scattering particles.
    상세보기
  278. Höhn, Klaus; Debray, Alexandra; Schlotter, Peter; Schmidt, Ralf; Schneider, Jürgen, Wavelength-converting casting composition and light-emitting semiconductor component.
    상세보기
  279. H철hn,Klaus; Debray,Alexandra; Schlotter,Peter; Schmidt,Ralf; Schneider,J체rgen, Wavelength-converting casting composition and white light-emitting semiconductor component.
    상세보기
  280. Tao, Dejie; Li, Yi-Qun; Wang, Gang, White light illumination system with narrow band green phosphor and multiple-wavelength excitation.
    상세보기
  281. Tao, Dejie; Li, Yi-Qun; Wang, Gang, White light illumination system with narrow band green phosphor and multiple-wavelength excitation.
    상세보기

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