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Gate insulated semiconductor device 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/04
출원번호 US-0300944 (1994-09-06)
우선권정보 JP-0246408 (1993-09-07); JP-0308627 (1993-11-15)
발명자 / 주소
  • Takemura Yasuhiko (Kanagawa JPX)
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd. (Kanagawa-ken JPX 03)
인용정보 피인용 횟수 : 130  인용 특허 : 0

초록

In order to provide TFTs having a low leak current property in its reverse biased state, the active semiconductor layer of the TFTs is doped with an impurity for increasing the band gap thereof, for example, carbon, nitrogen, and oxygen. Also, in order to compensate the decrease in conductivity due

대표청구항

A semiconductor device comprising: a substrate having an insulating surface; a semiconductor layer formed on said insulating surface, said semiconductor layer comprising a first region, at least one second region and a pair of third regions, said first region functioning as a channel and said pair o

이 특허를 인용한 특허 (130)

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