초록 ▼

A process for forming die contacting substrate for establishing ohmic contact with the die is formed with raised portions on contact members. The raised portions are dimensioned so that a compression force applied to the die against the substrate results in a limited penetration of the contact membe

A process for forming die contacting substrate for establishing ohmic contact with the die is formed with raised portions on contact members. The raised portions are dimensioned so that a compression force applied to the die against the substrate results in a limited penetration of the contact member into the bondpads. In the preferred embodiment, the substrate is formed of semiconductor material, with the raised portions being formed by etching. The arrangement may be used for establishing temporary electrical contact with a burn-in oven and with a discrete die tester. This permits the die to be characterized prior to assembly, so that the die may then be transferred in an unpackaged form. A Z-axis anisotropic conductive interconnect material may be interposed between the die attachment surface and the die.

대표청구항 ▼

A method for forming a contact member for establishing electrical contact with a contact location on a discrete, unpackaged semiconductor die, said contact location formed as a metal pad, said method comprising: forming a substrate; forming a raised contact on the substrate for contacting the contac

A method for forming a contact member for establishing electrical contact with a contact location on a discrete, unpackaged semiconductor die, said contact location formed as a metal pad, said method comprising: forming a substrate; forming a raised contact on the substrate for contacting the contact location, said raised contact formed with a height to provide a clearance between the substrate and the contact location of at least 20 m2 Åto 1.5 m