초록 ▼

The present invention relates to a flash EEPROM cell using polysilicon-to-polysilicon hot electron emission to erase the memory contents of the cell. Exemplary embodiments include a side gate, a control gate, a floating gate and source and drain regions. Appropriate biasing of these gates and source

The present invention relates to a flash EEPROM cell using polysilicon-to-polysilicon hot electron emission to erase the memory contents of the cell. Exemplary embodiments include a side gate, a control gate, a floating gate and source and drain regions. Appropriate biasing of these gates and source and drain regions controls the electron population of the floating gate. The memory cells may be of either the double polysilicon or triple polysilicon variety. Peripheral transistors are formed from a last formed polysilicon layer to avoid degrading the peripheral transistors.

대표청구항 ▼

A method of manufacturing a multilayer polysilicon device including peripheral transistors, said method comprising the steps of: forming a memory cell having at least two patterned polysilicon layers on a substrate, with one of said at least two patterned polysilicon layers being patterned subsequen

A method of manufacturing a multilayer polysilicon device including peripheral transistors, said method comprising the steps of: forming a memory cell having at least two patterned polysilicon layers on a substrate, with one of said at least two patterned polysilicon layers being patterned subsequent to formation of remaining polysilicon layers used to form said memory cell and being patterned for preventing electron leakage of a gate of said memory cell during erasure; and forming at least one peripheral transistor on said substrate, said at least one peripheral transistor having a gate, said step of forming at least one peripheral transistor further including forming said gate of said peripheral transistor with said one of said at least two patterned polysilicon layers for preventing electron leakage of said gate of said memory cell during erasure.