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Apparatus for full wafer deposition 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
출원번호 US-0310617 (1994-09-22)
우선권정보 JP-0245469 (1993-09-30)
발명자 / 주소
  • Tepman Avi (Cupertino CA) Jinbo Takeshi (Ichihara JPX) Takahama Hiroyuki (Sawara JPX) Saito Akihiko (Chiba JPX)
출원인 / 주소
  • Applied Materials, Inc. (Santa Clara CA 02)
인용정보 피인용 횟수 : 60  인용 특허 : 0

초록 ▼

The present invention provides a shield arrangement that prevents deposition in the area of the chamber surrounding the substrate. This shield arrangement is equipped with a wall-like member which surrounds a substrate, and includes a projecting annular flange and a substrate support which extends i

대표청구항 ▼

A deposition shield arrangement for limiting the deposition of deposition materials on internal chamber components during the processing of a substrate in the deposition chamber, comprising: a substrate support member disposed in the chamber and selectively positionable in the chamber to receive a s

이 특허를 인용한 특허 (60)

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  18. Sajoto Talex ; Selyutin Leonid ; Zhao Jun ; Wolff Stefan, High temperature multi-layered alloy heater assembly and related methods.
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  22. Liubo Hong, Hybrid coil design for ionized deposition.
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  23. Green, Richard J.; Tsai, Cheng-Hsiung; Roy, Shambhu N.; Bajaj, Puneet; Loo, David H., In situ plasma clean for removal of residue from pedestal surface without breaking vacuum.
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  28. Yang, Charles Chiun-Chieh, Method and apparatus for forming a silicon wafer with a denuded zone.
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  31. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method and apparatus for supercritical processing of multiple workpieces.
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  35. Hansen,Brandon; Lowe,Marie, Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid.
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