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Liquid-crystal electro-optical apparatus and method of manufacturing the same 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G02F-001/1333
  • G02F-001/1335
출원번호 US-0278088 (1994-07-20)
우선권정보 JP-0201832 (1993-07-22); JP-0205887 (1993-07-27); JP-0208060 (1993-07-31); JP-0080939 (1994-03-27)
발명자 / 주소
  • Konuma Toshimitsu (Kanagawa JPX) Nishi Takeshi (Kanagawa JPX) Shimizu Michio (Chiba JPX) Mori Harumi (Kanagawa JPX) Moriya Kouji (Kanagwa JPX) Murakami Satoshi (Kanagawa JPX)
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd. (Kanagawa-ken JPX 03)
인용정보 피인용 횟수 : 375  인용 특허 : 11

초록 ▼

A liquid crystal device comprising: a pair of substrates having an electrode arrangement thereon; an orientation control means provided on at least one of said substrates; and a ferroelectric or antiferroelectric liquid crystal layer interposed between said substrates, said liquid crystal layer bein

대표청구항 ▼

A liquid crystal device comprising: a pair of substrates having an electrode arrangement thereon; an orientation control means provided on at least one of said substrates; and a liquid crystal layer interposed between said substrates, said liquid crystal layer being uniaxially oriented by virtue of

이 특허에 인용된 특허 (11)

  1. Yoshinaga Kazuo (Machida JPX) Oikawa Katsuya (Yokohama JPX) Ohnishi Toshikazu (Tokyo JPX), Detecting interferential diffraction of a reflected beam from a polymer liquid crystal recording medium.
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  2. Hoshikawa Jun (Shiojiri JPX) Iwashita Yukihiro (Shiojiri JPX), Display panel having an inner and an outer seal and process for the production thereof.
    상세보기
  3. Katakura Kazunori (Atsugi JPX) Okada Shinjiro (Isehara JPX) Inaba Yutaka (Kawaguchi JPX), Driving method for liquid crystal device which is not affected by a threshold characteristic change.
    상세보기
  4. Hanyu Yukio (Atsugi JPX) Inaba Yutaka (Kawaguchi JPX) Tsuboyama Akira (Sagamihara JPX) Yoshida Akio (Chigasaki JPX), Ferroelectric liquid crystal device.
    상세보기
  5. Tsuboyama Akira (Tokyo JPX), Ferroelectric liquid crystal device having dual laminated alignment films.
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  6. Kojima Makoto (Hino JPX) Inaba Yutaka (Kawaguchi JPX) Murata Tatsuo (Oume JPX) Takao Hideaki (Sagamihara JPX), Functional substrate for controlling pixels.
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  7. Ishiwata Kazuya (Yokosuka JPX) Enomoto Takashi (Zama JPX) Yoshioka Toshifumi (Hiratsuka JPX), Liquid crystal device with metal oxide masking films with breaks between films under metal lead electrodes.
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  8. Hattori Katsuji (Uji JA) Fukai Masakazu (Nishinomiya JA) Moriyama Akio (Katano JA) Nishizawa Yasuhiro (Hirakata JA), Liquid crystal display device.
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  9. Takemura Yasuhiko (Kanagawa JPX) Konuma Toshimitsu (Kanagawa JPX) Yamazaki Shunpei (Tokyo JPX), Liquid crystal display with a ferroelectric film control layer.
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  10. Inaba Yutaka (Kawaguchi JPX) Kurematsu Katsumi (Kawasaki JPX) Kaneko Shuzo (Yokohama JPX), Method of driving ferroelectric liquid crystal element.
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  11. Clark Noel A. (3106 Kittrell Crt. Boulder CO 80303) Lagerwall Sven T. (30 Snackvagen Goteborg SEX), Surface stabilized ferroelectric liquid crystal devices.
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  132. Yamazaki, Shunpei, Liquid crystal display device in which a black display is performed by a reset signal during one sub-frame.
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  133. Hiroki, Masaaki, Liquid crystal display device, and method of driving the same.
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  134. Kao, Chen Kuan; Tsai, Yu Ting, Liquid crystal display panel and method for manufacturing the same.
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  135. Tahara,Shinya; Kojima,Seiji; Suwa,Shunichi; Ozeki,Masao; Niiyama,Satoshi, Liquid crystal optical element and process for its production.
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  136. Konuma, Toshimitsu; Nishi, Takeshi; Shimizu, Michio; Mori, Harumi; Moriya, Kouji; Murakami, Satoshi, Liquid-crystal electro-optical apparatus and method of manufacturing the same.
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  137. Konuma, Toshimitsu; Nishi, Takeshi; Shimizu, Michio; Mori, Harumi; Moriya, Kouji; Murakami, Satoshi, Liquid-crystal electro-optical apparatus and method of manufacturing the same.
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  138. Konuma, Toshimitsu; Nishi, Takeshi; Shimizu, Michio; Mori, Harumi; Moriya, Kouji; Murakami, Satoshi, Liquid-crystal electro-optical apparatus and method of manufacturing the same.
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  139. Konuma, Toshimitsu; Nishi, Takeshi; Shimizu, Michio; Mori, Harumi; Moriya, Kouji; Murakami, Satoshi, Liquid-crystal electro-optical apparatus and method of manufacturing the same.
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  140. Konuma,Toshimitsu; Nishi,Takeshi; Shimizu,Michio; Mori,Harumi; Moriya,Kouji; Murakami,Satoshi, Liquid-crystal electro-optical apparatus and method of manufacturing the same.
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  141. Yamazaki,Shunpei, Method for driving liquid crystal display device.
    상세보기
  142. Yamazaki, Shunpei; Koyama, Jun, Method for manufacturing an electrooptical device.
    상세보기
  143. Ohtani, Hisashi; Nakazawa, Misako; Murakami, Satoshi, Method for producing a semiconductor device by etch back process.
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  144. Kasahara, Kenji; Kawasaki, Ritsuko; Ohtani, Hisashi; Yamazaki, Shunpei, Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces.
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  145. Yamazaki,Yu; Fukumoto,Ryota; Tanada,Yoshifumi; Iwabuchi,Tomoyuki; Seo,Satoshi; Yamazaki,Shunpei, Method of driving a light emitting device and electronic equipment.
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  146. Satake,Rumo, Method of driving liquid crystal display device.
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  147. Ohtani, Hisashi; Nakazawa, Misako, Method of fabricating a liquid crystal display device having an improved storage capacitance.
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  148. Sakama, Mitsunori; Ishimaru, Noriko; Asami, Taketomi; Yamazaki, Shunpei, Method of fabricating a semiconductor device.
    상세보기
  149. Yamazaki, Shunpei, Method of fabricating a semiconductor device.
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  150. Yamazaki, Shunpei, Method of fabricating a semiconductor device.
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  151. Yamazaki, Shunpei, Method of fabricating a semiconductor device.
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  152. Yamazaki,Shunpei, Method of fabricating a semiconductor device by doping impurity element into a semiconductor layer through a gate electrode.
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  153. Yamazaki, Shunpei; Ohtani, Hisashi; Suzawa, Hideomi; Takayama, Toru, Method of forming a semiconductor device.
    상세보기
  154. Hamada, Takashi; Arai, Yasuyuki, Method of manufacturing a semiconductor device.
    상세보기
  155. Hamada, Takashi; Arai, Yasuyuki, Method of manufacturing a semiconductor device.
    상세보기
  156. Yamazaki,Shunpei; Ohtani,Hisashi; Ohnuma,Hideto, Method of manufacturing a semiconductor device.
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  157. Yamazaki,Shunpei, Method of manufacturing a semiconductor device having a gate electrode with a three layer structure.
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  158. Yamazaki, Shunpei; Ikeda, Takayuki; Fukunaga, Takeshi, Method of manufacturing a semiconductor device having thin film transistor and capacitor.
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  159. Ritsuko Kawasaki JP; Kenji Kasahara JP; Hisashi Ohtani JP, Method of manufacturing a semiconductor device with TFT.
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  160. Tanaka, Yukio; Nagao, Shou, Method of manufacturing an active matrix type semiconductor display device.
    상세보기
  161. Yamazaki,Shunpei; Suzawa,Hideomi; Yamagata,Hirokazu, Method of manufacturing semiconductor device having first and second insulating films.
    상세보기
  162. Nakajima, Setsuo; Ohtani, Hisashi; Yamazaki, Shunpei, Method of manufacturing semiconductor devices.
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  163. Nakajima,Setsuo; Ohtani,Hisashi; Yamazaki,Shunpei, Method of manufacturing semiconductor devices.
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  164. Nakajima,Setsuo; Ohtani,Hisashi; Yamazaki,Shunpei, Method of manufacturing semiconductor devices.
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  165. Ohtani, Hisashi, Method of manufacturing thin film transistor.
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  166. Ohtani, Hisashi, Method of manufacturing thin film transistor.
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  167. Ohtani, Hisashi, Method of manufacturing thin film transistor.
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  168. Ohtani, Hisashi, Method of manufacturing thin film transistor.
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  169. Tanaka, Koichiro, Method of using beam homogenizer and laser irradiation apparatus.
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  170. Hamm, Thomas; Mueller, Beno, Optical device.
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  171. Yamazaki, Shunpei; Koyama, Jun, Optically compensated birefringence mode liquid crystal display device.
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  172. Yamazaki, Shunpei; Arai, Yasuyuki, Organic electroluminescent display device.
    상세보기
  173. Yamazaki, Shunpei; Arai, Yasuyuki, Organic electroluminescent display device.
    상세보기
  174. Yamazaki, Shunpei; Arai, Yasuyuki, Organic electroluminescent display device.
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  175. Yamazaki, Shunpei; Arai, Yasuyuki, Organic electroluminescent display device.
    상세보기
  176. Yamazaki, Shunpei; Arai, Yasuyuki, Organic electroluminescent display device.
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  177. Yamazaki, Shunpei; Arai, Yasuyuki, Organic electroluminescent display device.
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  178. Hidehito Kitakado JP; Masahiko Hayakawa JP; Shunpei Yamazaki JP; Taketomi Asami JP, Oxynitride laminate "blocking layer" for thin film semiconductor devices.
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  179. Yamazaki, Shunpei; Arai, Yasuyuki; Okamoto, Satohiro, Photoelectric conversion device and manufacturing method thereof.
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  180. Inoue, Masaru; Sasaki, Kunihiko; Kurihara, Takashi; Kume, Yasuhiro, Physical property measuring method for TFT liquid crystal panel and physical property measuring apparatus for TFT liquid crystal panel.
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  181. Inoue, Masaru; Sasaki, Kunihiko; Kurihara, Takashi; Kume, Yasuhiro, Physical property measuring method for TFT liquid crystal panel and physical property measuring apparatus for TFT liquid crystal panel.
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  182. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Shibata Hiroshi,JPX ; Fukunaga Takeshi,JPX, Pixel TFT and driver TFT having different gate insulation width.
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  183. Yamazaki, Shunpei; Koyama, Jun; Hayashi, Keisuke, Portable information processing system.
    상세보기
  184. Yamazaki,Shunpei; Koyama,Jun; Hayashi,Keisuke, Portable information processing system.
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  185. Shunpei Yamazaki JP; Yoshiharu Hirakata JP, Preparation method of semiconductor device.
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  186. Shunpei Yamazaki JP; Hisashi Ohtani JP, Process for producing semiconductor thin film devices using group 14 element and high temperature oxidizing treatment to achieve a crystalline silicon film.
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  187. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Kitakado Hidehito,JPX, Process of fabricating a semiconductor device.
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  188. Yamazaki, Shunpei; Koyama, Jun; Kitakado, Hidehito, Process of fabricating a semiconductor device.
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  189. Yamazaki,Shunpei; Koyama,Jun; Kitakado,Hidehito, Process of fabricating a semiconductor device.
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  190. Kokubo, Chiho; Yamagata, Hirokazu; Yamazaki, Shunpei, Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same.
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  191. Koyama, Jun, Semiconductor device.
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  192. Koyama, Jun, Semiconductor device.
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  193. Koyama, Jun, Semiconductor device.
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  194. Koyama, Jun, Semiconductor device.
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  195. Koyama,Jun, Semiconductor device.
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  196. Murakami,Satoshi; Hirakata,Yoshiharu; Fujimoto,Etsuko; Yamazaki,Yu; Yamazaki,Shunpei, Semiconductor device.
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  197. Ohnuma, Hideto, Semiconductor device.
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  198. Ohnuma, Hideto, Semiconductor device.
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  199. Ohtani,Hisashi; Nakazawa,Misako; Murakami,Satoshi, Semiconductor device.
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  200. Shunpei Yamazaki JP, Semiconductor device.
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  201. Shunpei Yamazaki JP, Semiconductor device.
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  202. Yamazaki, Shunpei, Semiconductor device.
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  203. Yamazaki, Shunpei, Semiconductor device.
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  204. Kawasaki, Ritsuko; Kasahara, Kenji; Ohtani, Hisashi, Semiconductor device and a method of manufacturing the same.
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  205. Kawasaki,Ritsuko; Kasahara,Kenji; Ohtani,Hisashi, Semiconductor device and a method of manufacturing the same.
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  206. Ohtani Hisashi,JPX ; Nakazawa Misako,JPX, Semiconductor device and a method of manufacturing the same.
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  207. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
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  208. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
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  209. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
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  210. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
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  211. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
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  212. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
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  213. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
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  214. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
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  215. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
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  216. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
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  217. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
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  218. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
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  219. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
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  220. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
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  221. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
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  222. Yamazaki, Shunpei; Teramoto, Satoshi, Semiconductor device and fabrication method thereof.
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  223. Yamazaki,Shunpei; Murakami,Satoshi; Koyama,Jun; Tanaka,Yukio; Kitakado,Hidehito; Ohnumo,Hideto, Semiconductor device and fabrication method thereof.
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  224. Jun Koyama JP, Semiconductor device and manufacturing method of the same.
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  225. Akiharu Miyanaga JP; Toru Mitsuki JP, Semiconductor device and manufacturing method thereof.
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  226. Hideomi Suzawa JP; Yoshihiro Kusuyama JP, Semiconductor device and manufacturing method thereof.
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  227. Kitakado, Hidehito; Hayakawa, Masahiko; Yamazaki, Shunpei; Asami, Taketomi, Semiconductor device and manufacturing method thereof.
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  228. Kitakado, Hidehito; Hayakawa, Masahiko; Yamazaki, Shunpei; Asami, Taketomi, Semiconductor device and manufacturing method thereof.
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  229. Suzawa, Hideomi; Kusuyama, Yoshihiro, Semiconductor device and manufacturing method thereof.
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  230. Suzawa, Hideomi; Kusuyama, Yoshihiro, Semiconductor device and manufacturing method thereof.
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  231. Suzawa, Hideomi; Kusuyama, Yoshihiro, Semiconductor device and manufacturing method thereof.
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  232. Suzawa, Hideomi; Kusuyama, Yoshihiro, Semiconductor device and manufacturing method thereof.
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  233. Yamazaki, Shunpei, Semiconductor device and manufacturing method thereof.
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  234. Yamazaki, Shunpei, Semiconductor device and manufacturing method thereof.
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  235. Yamazaki, Shunpei, Semiconductor device and manufacturing method thereof.
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  236. Yamazaki, Shunpei, Semiconductor device and manufacturing method thereof.
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  237. Yamazaki, Shunpei, Semiconductor device and manufacturing method thereof.
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  238. Yamazaki, Shunpei, Semiconductor device and manufacturing method thereof.
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  239. Yamazaki, Shunpei; Koyama, Jun; Shibata, Hiroshi; Fukunaga, Takeshi, Semiconductor device and manufacturing method thereof.
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  240. Yamazaki, Shunpei; Kuwabara, Hideaki, Semiconductor device and manufacturing method thereof.
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  241. Yamazaki, Shunpei; Suzawa, Hideomi; Yamagata, Hirokazu, Semiconductor device and manufacturing method thereof.
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  242. Yamazaki,Shunpei, Semiconductor device and manufacturing method thereof.
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  243. Yamazaki,Shunpei; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and manufacturing method thereof.
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  244. Yamazaki,Shunpei; Suzawa,Hideomi; Ono,Koji; Arai,Yasuyuki, Semiconductor device and manufacturing method thereof.
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  245. Yamazaki, Shunpei; Koyama, Jun; Takayama, Toru; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
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  246. Yamazaki, Shunpei; Koyama, Jun; Takayama, Toru; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
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  247. Yamazaki, Shunpei; Koyama, Jun; Takayama, Toru; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
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  248. Yamazaki,Shunpei; Koyama,Jun; Takayama,Toru; Hamatani,Toshiji, Semiconductor device and method for fabricating the same.
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  249. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
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  250. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
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  251. Yamazaki, Shunpei; Fukunaga, Takeshi, Semiconductor device and method for manufacturing same.
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  252. Yamazaki, Shunpei; Fukunaga, Takeshi, Semiconductor device and method for manufacturing same.
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  253. Yamazaki,Shunpei; Fukunaga,Takeshi, Semiconductor device and method for manufacturing same.
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  254. Hayakawa, Masahiko; Sakama, Mitsunori; Toriumi, Satoshi, Semiconductor device and method for manufacturing the same.
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  255. Hayakawa, Masahiko; Sakama, Mitsunori; Toriumi, Satoshi, Semiconductor device and method for manufacturing the same.
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  256. Hayakawa, Masahiko; Sakama, Mitsunori; Toriumi, Satoshi, Semiconductor device and method for manufacturing the same.
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  257. Hayakawa, Masahiko; Sakama, Mitsunori; Toriumi, Satoshi, Semiconductor device and method for manufacturing the same.
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  258. Hayakawa, Masahiko; Sakama, Mitsunori; Toriumi, Satoshi, Semiconductor device and method for manufacturing the same.
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  259. Hayakawa, Masahiko; Sakama, Mitsunori; Toriumi, Satoshi, Semiconductor device and method for manufacturing the same.
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  260. Hayakawa,Masahiko; Sakama,Mitsunori; Toriumi,Satoshi, Semiconductor device and method for manufacturing the same.
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  261. Hayakawa,Masahiko; Sakama,Mitsunori; Toriumi,Satoshi, Semiconductor device and method for manufacturing the same.
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  262. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
    상세보기
  263. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
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  264. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
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  265. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
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  266. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
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  267. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
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  268. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
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  269. Hirakata,Yoshiharu; Goto,Yuugo; Kobayashi,Yuko; Yamazaki,Shunpei, Semiconductor device and method of fabricating the same.
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  270. Kokubo, Chiho; Yamagata, Hirokazu; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
    상세보기
  271. Kokubo, Chiho; Yamagata, Hirokazu; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
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  272. Shunpei Yamazaki JP; Jun Koyama JP, Semiconductor device and method of fabricating the same.
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  273. Shunpei Yamazaki JP; Taketomi Asami JP; Toru Takayama JP; Ritsuko Kawasaki JP; Hiroki Adachi JP; Naoya Sakamoto JP; Masahiko Hayakawa JP; Hiroshi Shibata JP; Yasuyuki Arai JP, Semiconductor device and method of fabricating the same.
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  274. Yamazaki, Shunpei; Asami, Taketomi; Takayama, Toru; Kawasaki, Ritsuko; Adachi, Hiroki; Sakamoto, Naoya; Hayakawa, Masahiko; Shibata, Hiroshi; Arai, Yasuyuki, Semiconductor device and method of fabricating the same.
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  275. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and method of fabricating the same.
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  276. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and method of fabricating the same.
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  277. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and method of fabricating the same.
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  278. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and method of fabricating the same.
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  279. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and method of fabricating the same.
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  280. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and method of fabricating the same.
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  281. Yamazaki, Shunpei; Murakami, Satoshi; Arai, Yasuyuki, Semiconductor device and method of fabricating the same.
    상세보기
  282. Yamazaki, Shunpei; Murakami, Satoshi; Arai, Yasuyuki, Semiconductor device and method of fabricating the same.
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  283. Yamazaki,Shunpei; Asami,Taketomi; Takayama,Toru; Kawasaki,Ritsuko; Adachi,Hiroki; Sakamoto,Naoya; Hayakawa,Masahiko; Shibata,Hiroshi; Arai,Yasuyuki, Semiconductor device and method of fabricating the same.
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  284. Yamazaki,Shunpei; Asami,Taketomi; Takayama,Toru; Kawasaki,Ritsuko; Adachi,Hiroki; Sakamoto,Naoya; Hayakawa,Masahiko; Shibata,Hiroshi; Arai,Yasuyuki, Semiconductor device and method of fabricating the same.
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  285. Yamazaki,Shunpei; Asami,Taketomi; Takayama,Toru; Kawasaki,Ritsuko; Adachi,Hiroki; Sakamoto,Naoya; Hayakawa,Masahiko; Shibata,Hiroshi; Arai,Yasuyuki, Semiconductor device and method of fabricating the same.
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  286. Yamazaki,Shunpei; Koyama,Jun, Semiconductor device and method of fabricating the same.
    상세보기
  287. Yamazaki,Shunpei; Ohtani,Hisashi; Suzawa,Hideomi; Takayama,Toru, Semiconductor device and method of fabricating the same.
    상세보기
  288. Kawasaki,Ritsuko; Kitakado,Hidehito; Kasahara,Kenji; Yamazaki,Shunpei, Semiconductor device and method of manufacturing the same.
    상세보기
  289. Murakami, Satoshi; Yamazaki, Shunpei; Koyama, Jun; Osame, Mitsuaki; Tanaka, Yukio; Hirakata, Yoshiharu, Semiconductor device and method of manufacturing the same.
    상세보기
  290. Murakami, Satoshi; Yamazaki, Shunpei; Koyama, Jun; Osame, Mitsuaki; Tanaka, Yukio; Hirakata, Yoshiharu, Semiconductor device and method of manufacturing the same.
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  291. Murakami, Satoshi; Yamazaki, Shunpei; Koyama, Jun; Osamè, Mitsuaki; Tanaka, Yukio; Hirakata, Yoshiharu, Semiconductor device and method of manufacturing the same.
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  292. Ohtani, Hisashi; Takano, Tamae; Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
    상세보기
  293. Ohtani, Hisashi; Takano, Tamae; Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
    상세보기
  294. Ohtani,Hisashi; Takano,Tamae; Yamazaki,Shunpei, Semiconductor device and method of manufacturing the same.
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  295. Yamazaki, Shunpei; Adachi, Hiroki, Semiconductor device and method of manufacturing the same.
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  307. Kokubo, Chiho; Yamagata, Hirokazu; Yamazaki, Shunpei, Semiconductor device applying to the crystalline semiconductor film.
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  308. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device comprising a pixel unit including an auxiliary capacitor.
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  309. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito, Semiconductor device comprising a second organic film over a third insulating film wherein the second organic film overlaps with a channel formation region and a second conductive film.
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  310. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito, Semiconductor device comprising a second organic film over a third insulating film wherein the second organic film overlaps with a channel formation region and a second conductive film.
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  311. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito, Semiconductor device comprising a spacer wherein the spacer has an opening through which a pixel electrode is connected to a first transistor.
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  312. Murakami, Satoshi; Yamazaki, Shunpei; Koyama, Jun; Osame, Mitsuaki; Tanaka, Yukio; Hirakata, Yoshiharu, Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same.
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  313. Yamazaki,Shunpei, Semiconductor device comprising thin film transistor comprising conductive film having tapered edge.
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  314. Yamazaki, Shunpei, Semiconductor device having LDD regions.
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  316. Ohtani, Hisashi, Semiconductor device having driver circuit and pixel section provided over same substrate.
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  317. Yamazaki, Shunpei; Suzawa, Hideomi; Yamagata, Hirokazu, Semiconductor device having first and second insulating films.
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  318. Kitakado,Hidehito; Hayakawa,Masahiko; Yamazaki,Shunpei; Asami,Taketomi, Semiconductor device having insulating film.
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  319. Ohtani, Hisashi; Nakazawa, Misako; Murakami, Satoshi; Fujimoto, Etsuko, Semiconductor device having multi-layer wiring.
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  320. Yamazaki, Shunpei; Teramoto, Satoshi, Semiconductor device having parallel thin film transistors.
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  321. Koyama,Jun; Ohnuma,Hideto; Shionoiri,Yutaka; Nagao,Shou, Semiconductor device having pixels.
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  322. Yamazaki,Shunpei; Nakajima,Setsuo; Kuwabara,Hideaki, Semiconductor device having semiconductor circuit formed by semiconductor elements and method for manufacturing the same.
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  323. Yamazaki,Shunpei; Nakajima,Setsuo; Kuwabara,Hideaki, Semiconductor device having semiconductor circuit formed by semiconductor elements and method for manufacturing the same.
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  324. Yamazaki, Shunpei; Teramoto, Satoshi, Semiconductor device having thin film transistor.
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  325. Yamazaki,Shunpei; Tanaka,Yukio; Koyama,Jun; Osame,Mitsuaki; Murakami,Satoshi; Ohnuma,Hideto; Fujimoto,Etsuko; Kitakado,Hidehito, Semiconductor device having thin film transistor and light-shielding film.
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  326. Hamada, Takashi; Arai, Yasuyuki, Semiconductor device including a conductive film having a tapered shape.
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  327. Yamazaki,Shunpei; Koyama,Jun; Shibata,Hiroshi; Fukunaga,Takeshi, Semiconductor device including a thin film transistor and a storage capacitor.
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  328. Yamazaki Shunpei,JPX ; Nakajima Setsuo,JPX, Semiconductor device provided with semiconductor circuit consisting of semiconductor element and method of manufacturing the same.
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  329. Yamazaki, Shunpei; Nakajima, Setsuo, Semiconductor device provided with semiconductor circuit consisting of semiconductor element and method of manufacturing the same.
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  330. Yamazaki Shunpei,JPX ; Nakajima Setsuo,JPX ; Kawasaki Ritsuko,JPX, Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same.
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  331. Yamazaki, Shunpei; Nakajima, Setsuo; Kawasaki, Ritsuko, Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same.
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  332. Yamazaki,Shunpei; Nakajima,Setsuo; Kawasaki,Ritsuko, Semiconductor device provided with semiconductor circuit made of semiconductor element and method of fabricating the same.
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  333. Yamazaki, Shunpei, Semiconductor device with tapered gates.
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  336. Kasahara,Kenji; Kawasaki,Ritsuko; Ohtani,Hisashi; Yamazaki,Shunpei, Semiconductor device, manufacturing method thereof, and electronic device.
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  344. Ohnuma, Hideto, Semiconductor display device and manufacturing method thereof.
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  353. Tanaka, Yukio; Hayashi, Keisuke, Shift register circuit, driving circuit of display device, and display device using the driving circuit.
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  354. Furue,Hirokazu; Yokoyama,Hiroshi, Smectic liquid crystal device and process for producing the same.
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  356. Kawasaki Ritsuko,JPX ; Kitakado Hidehito,JPX ; Kasahara Kenji,JPX ; Yamazaki Shunpei,JPX, Thin film transistors having ldd regions.
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  375. Takayama,Toru; Sato,Keiji; Yamazaki,Shunpei, Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof.
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