There is disclosed a process for cleaning a harmful gas which comprises bringing a harmful gaseous halogenide such as chlorine, hydrogen chloride, dichlorosilane, silicon tetrachloride, phosphorus trichloride, chlorine trifluoride, boron trichloride, boron trifluoride, tungsten hexafluoride, silicon
There is disclosed a process for cleaning a harmful gas which comprises bringing a harmful gaseous halogenide such as chlorine, hydrogen chloride, dichlorosilane, silicon tetrachloride, phosphorus trichloride, chlorine trifluoride, boron trichloride, boron trifluoride, tungsten hexafluoride, silicon tetrafluoride, fluorine, hydrogen fluoride and hydrogen bromide into contact with a cleaning agent comprising zinc oxide, aluminum oxide and an alkali compound to remove the above halogenide. The above process is extremely effective for promptly and efficiently removing the above gaseous halogenide that is contained in the gas discharged from semiconductor manufacturing process.
대표청구항▼
A process for cleaning a harmful gas which comprises contacting a gas, at a space linear velocity of from 0.05 to 0.3 m/sec, containing at least one gaseous component selected from the group consisting of silicon tetrachloride, chlorine, hydrogen chloride, silicon tetrafluoride, phosphorus trichlori
A process for cleaning a harmful gas which comprises contacting a gas, at a space linear velocity of from 0.05 to 0.3 m/sec, containing at least one gaseous component selected from the group consisting of silicon tetrachloride, chlorine, hydrogen chloride, silicon tetrafluoride, phosphorus trichloride, fluorine, chlorine trifluoride, tungsten hexafluoride, hydrogen fluoride, dichlorosilane, boron trichloride, boron trifluoride and hydrogen bromide, said gaseous component being in a concentration of over 1,000 ppm to 1% by volume by volume, with a cleaning agent in a bulk density of from 0.4 to 2.0 g/mL comprising (i) zinc oxide, (ii) aluminum oxide and (iii) at least one compound selected from the group consisting of potassium carbonate, potassium hydrogencarbonate, potassium hydroxide, sodium carbonate, sodium hydrogencarbonate, sodium hydroxide, magnesium carbonate, magnesium hydrogencarbonate, magnesium hydroxide, calcium carbonate, calcium hydrogencarbonate, calcium hydroxide and ammonium hydroxide, to remove said gaseous component, a ratio of the aluminum oxide to the zinc oxide being 0.02 to 0.60 expressed in terms of the number of aluminum atoms per one zinc atom.
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이 특허에 인용된 특허 (8)
Kitayama Masayasu (Kawasaki JPX) Sugimori Yoshiaki (Tokyo JPX) Ohta Schunich (Fujisawa JPX), Absorbent for treating gases containing the materials used for semiconductor products and process of treating such gases.
Sakata Yoshitsugu (Otsu JPX) Fukahori Shinogu (Nishinomiya JPX) Kodera Hiroyuki (Amagasaki JPX) Iwata Kenzi (Higashiosaka JPX), Acidic gas absorbent and process for production thereof.
Schumacher John C. (Carlsbad CA) Anderson Lawrence B. (Encinitas CA) Hammon Timothy E. (Cardiff CA), Device for preventing accidental releases of hazardous gases.
Kaushal, Tony S.; Shamouilian, Shamouil; Borgaonkar, Harshad; Wong, Kwok Manus; Chafin, Michael G.; Bhatnagar, Ashish, Heated catalytic treatment of an effluent gas from a substrate fabrication process.
Clark, Daniel O.; Raoux, Sebastien; Vermeulen, Robert M.; Crawford, Shaun W., Methods and apparatus for sensing characteristics of the contents of a process abatement reactor.
Bazer-Bachi, Delphine; Chiche, David; Lopez, Joseph; Lelias, Marc Antoine, Preparation of a solid based on zinc oxide for use in purifying a gas or a liquid.
Nedez, Christophe, Process for eliminating halogen-containing compounds contained in a gas or liquid using an adsorbent composition based on at least one metallic element.
Chiu, Ho-Man Rodney; Clark, Daniel O.; Crawford, Shaun W.; Jung, Jay J.; Todd, Leonard B.; Vermeulen, Robbert, Reactor design to reduce particle deposition during process abatement.
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