초록 ▼

A planarization process for the manufacturing of highly-planar interlayer dielectric thin films in integrated circuits, particularly in non-volatile semiconductor memory devices, comprises the steps of: forming a first barrier layer over a semiconductor substrate wherein integrated devices have been

A planarization process for the manufacturing of highly-planar interlayer dielectric thin films in integrated circuits, particularly in non-volatile semiconductor memory devices, comprises the steps of: forming a first barrier layer over a semiconductor substrate wherein integrated devices have been previously obtained; forming a second layer of oxide containing phosphorous and boron over the first undoped oxide the concentration of boron being lower than the concentration of phosphorous; forming a third layer of oxide containing phosphorous and boron over the second oxide layer, the concentration of phosphorous being lower than or equal to the concentration of boron; performing a thermal process at a temperature sufficient to melt the third oxide layer, to obtain a planar surface.

대표청구항 ▼

An integrated circuit comprising a silicon substrate wherein electronic devices are obtained, comprising first-level electrical interconnection lines over said substrate and second-level electrical interconnection lines, the first-level and second-level electrical interconnection lines being separat

An integrated circuit comprising a silicon substrate wherein electronic devices are obtained, comprising first-level electrical interconnection lines over said substrate and second-level electrical interconnection lines, the first-level and second-level electrical interconnection lines being separated by an insulating layer, characterized in that the insulating layer comprises: a barrier layer superimposed over the first-level electrical interconnection lines; a first insulator material layer doped with phosphorous and boron, superimposed over the barrier layer, having a concentration of phosphorous higher than a concentration of boron, the concentration of phosphorous being suitable to make the first insulator material layer act as a gettering layer for high-mobility ions and the concentration of boron depending on the concentration of phosphorous and being suitable to make the first insulator material layer stable; and a generally planar second insulator material layer doped with boron and phosphorous, superimposed over the first insulator material layer, having a concentration of boron in the second insulator material layer equal to or higher than a concentration of phosphorous in the second insulator material layer, the concentration of boron being suitable to lower a melting-point temperature of the second insulator material layer to a prescribed value and the concentration of phosphorous being suitable to make the layer stable.