초록 ▼

In the method of the subject invention, a coating of AlN or a coating of SiC is grown in situ in the MOCVD or MOMBE reaction chamber to cover all surfaces therein. There is thus formed a stable layer on these surfaces that prevents oxygen and other impurities originally within the reaction chamber f

In the method of the subject invention, a coating of AlN or a coating of SiC is grown in situ in the MOCVD or MOMBE reaction chamber to cover all surfaces therein. There is thus formed a stable layer on these surfaces that prevents oxygen and other impurities originally within the reaction chamber from reacting with the semiconducting layer to be grown.

대표청구항 ▼

A method for preparing chamber for use with metallo-organic chemical vapor deposition or metallo-organic molecular beam epitaxy procedures, comprising first forming at temperatures of from about 800°C. to about 1200°C. in situ a barrier coating over all surfaces of the reaction chamber, said barrier

A method for preparing chamber for use with metallo-organic chemical vapor deposition or metallo-organic molecular beam epitaxy procedures, comprising first forming at temperatures of from about 800°C. to about 1200°C. in situ a barrier coating over all surfaces of the reaction chamber, said barrier coating preventing impurities from said surfaces from interfering with said procedures.