초록 ▼

Process for the production of semiconductor devices comprising the steps of applying a solution of the specified polycarbosilane in a solvent onto a substrate having electrically conductive components fabricated therein, and curing the coated layer of the polycarbosilane at a temperature of not less

Process for the production of semiconductor devices comprising the steps of applying a solution of the specified polycarbosilane in a solvent onto a substrate having electrically conductive components fabricated therein, and curing the coated layer of the polycarbosilane at a temperature of not less than 350°C. in an oxidizing atmosphere to thereby covert the polycarbosilane layer to a silicon oxide layer. The resulting silicon oxide layer has a planarized surface and has no cracking and accordingly is useful as a dielectric layer and a protective layer in the production of semiconductor devices having a high reliability.

대표청구항 ▼

A process for the production of a semiconductor device which comprises the steps of applying a solution of polycarbosilane of the general formula (1): [Figure] (1) in which R1 represents a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms or a substituted or unsubs

A process for the production of a semiconductor device which comprises the steps of applying a solution of polycarbosilane of the general formula (1): [Figure] (1) in which R1 represents a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms or a substituted or unsubstituted aryl group; R2 represents a substituted or unsubstituted methylene or methyn group; and m and n each is a positive integer satisfying the condition of 101000 and a ratio of m and N is less than 0.3, in a solvent onto a substrate having electrically conductive components fabricated therein, and curing the coated layer of the polycarbosilane at a temperature of not less than 350°C. in an oxidizing atmosphere to thereby convert the polycarbosilane layer to a silicon oxide layer.