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Method for manufacturing semiconductor device 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/268
  • H01L-021/84
출원번호 US-0391580 (1995-02-21)
우선권정보 JP-0051237 (1994-02-23)
발명자 / 주소
  • Ohtani Hisahi (Kanagawa JPX) Miyanaga Akiharu (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Yamaguchi Naoaki (Kanagawa JPX)
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd. (Kanagawa JPX 03)
인용정보 피인용 횟수 : 262  인용 특허 : 0

초록

A process for manufacturing a semiconductor device, particularly a thin film transistor, by using a crystalline silicon film having excellent characteristics. The process comprises forming a silicon nitride film and an amorphous silicon film in contact thereto, introducing a catalyst element capable

대표청구항

A method of manufacturing a semiconductor device over a substrate comprising the steps of: forming a base insulating film on said substrate; forming a semiconductor film comprising silicon on said base insulating film in direct contact therewith; disposing a catalyst capable of promoting a crystalli

이 특허를 인용한 특허 (262)

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  50. Tanaka, Koichiro; Ohnuma, Hideto, Method for manufacturing transistor semiconductor devices with step of annealing to getter metal with phosphorous.
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  61. Moon,Dae Gyu, Method of fabricating a system-on-panel typed liquid crystal display.
  62. Cho, Min Gu, Method of fabricating liquid crystal display device.
  63. Cho, Min Gu, Method of fabricating liquid crystal display device with forming gate insulating layer by gas mixtures.
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  155. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
  156. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  157. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  158. Hiroki Adachi JP; Akira Takenouchi JP; Takeshi Fukada JP; Hiroshi Uehara JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
  159. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Takeshi Fukunaga JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
  160. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  161. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  162. Miyanaga,Akiharu; Ohtani,Hisashi; Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
  163. Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Yamazaki,Shunpei; Kuwabara,Hideaki, Semiconductor device and method for manufacturing the same.
  164. Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  165. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  166. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  167. Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
  168. Takemura,Yasuhiro, Semiconductor device and method for manufacturing the same.
  169. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Fukunaga Takeshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  170. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  171. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  172. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device and method for producing it.
  173. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.
  174. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.
  175. Yamazaki Shunpei,JPX, Semiconductor device and method of fabricating same.
  176. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method of fabricating same.
  177. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.
  178. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.
  179. Yamazaki,Shunpei, Semiconductor device and method of fabricating same.
  180. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method of fabricating same.
  181. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
  182. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
  183. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
  184. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
  185. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
  186. Hirakata, Yoshiharu; Goto, Yuugo; Kobayashi, Yuko; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
  187. Hirakata,Yoshiharu; Goto,Yuugo; Kobayashi,Yuko; Yamazaki,Shunpei, Semiconductor device and method of fabricating the same.
  188. Kokubo, Chiho; Yamagata, Hirokazu; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
  189. Kokubo, Chiho; Yamagata, Hirokazu; Yamazaki, Shunpei, Semiconductor device and method of fabricating the same.
  190. Takemura, Yasuhiko, Semiconductor device and method of fabricating the same.
  191. Takemura,Yasuhiko, Semiconductor device and method of fabricating the same.
  192. Hamada, Takashi; Murakami, Satoshi; Yamazaki, Shunpei; Nakamura, Osamu; Kajiwara, Masayuki; Koezuka, Junichi; Takayama, Toru, Semiconductor device and method of manufacturing the same.
  193. Hamada,Takashi; Murakami,Satoshi; Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Takayama,Toru, Semiconductor device and method of manufacturing the same.
  194. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method of manufacturing the same.
  195. Ohtani, Hisashi; Takano, Tamae; Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
  196. Ohtani, Hisashi; Takano, Tamae; Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
  197. Ohtani,Hisashi; Takano,Tamae; Yamazaki,Shunpei, Semiconductor device and method of manufacturing the same.
  198. Ohtani,Hisashi; Yamazaki,Shunpei, Semiconductor device and method of manufacturing the same.
  199. Shunpei Yamazaki JP, Semiconductor device and method of manufacturing the same.
  200. Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
  201. Zhang Hongyong,JPX, Semiconductor device and method of manufacturing the same.
  202. Zhang Hongyong,JPX, Semiconductor device and method of manufacturing the same.
  203. Zhang, Hongyong, Semiconductor device and method of manufacturing the same.
  204. Zhang,Hongyong, Semiconductor device and method of manufacturing the same.
  205. Morimoto, Yoshihiro; Yoneda, Kiyoshi, Semiconductor device and method of producing the same.
  206. Zhang, Hongyong; Ohnuma, Hideto; Takemura, Yasuhiko, Semiconductor device and process for fabricating the same.
  207. Zhang,Hongyong; Ohnuma,Hideto; Takemura,Yasuhiko, Semiconductor device and process for fabricating the same.
  208. Ishitsuka Norio,JPX ; Miura Hideo,JPX ; Ikeda Shuji,JPX ; Suzuki Norio,JPX ; Matsuda Yasushi,JPX ; Yoshida Yasuko,JPX ; Yamamoto Hirohiko,JPX ; Kobayashi Masamichi,JPX ; Takamatsu Akira,JPX ; Shimizu, Semiconductor device and process for producing the same.
  209. Ishitsuka, Norio; Miura, Hideo; Ikeda, Shuji; Suzuki, Norio; Matsuda, Yasushi; Yoshida, Yasuko; Yamamoto, Hirohiko; Kobayashi, Masamichi; Takamatsu, Akira; Shimizu, Hirofumi; Fukuda, Kazushi; Horibe,, Semiconductor device and process for producing the same.
  210. Ishitsuka,Norio; Miura,Hideo; Ikeda,Shuji; Suzuki,Norio; Matsuda,Yasushi; Yoshida,Yasuko; Yamamoto,Hirohiko; Kobayashi,Masamichi; Takamatsu,Akira; Shimizu,Hirofumi; Fukuda,Kazushi; Horibe,Shinichi; Nozoe,Toshio, Semiconductor device and process for producing the same.
  211. Ishitsuka, Norio; Miura, Hideo; Ikeda, Shuji; Suzuki, Norio; Matsuda, Yasushi; Yoshida, Yasuko; Yamamoto, Hirohiko; Kobayashi, Masamichi; Takamatsu, Akira; Shimizu, Hirofumi; Fukuda, Kazushi; Horibe,, Semiconductor device and process for producing the sme.
  212. Kokubo, Chiho; Yamagata, Hirokazu; Yamazaki, Shunpei, Semiconductor device applying to the crystalline semiconductor film.
  213. Shunpei Yamazaki JP; Naoaki Yamaguchi JP; Setsuo Nakajima JP, Semiconductor device comprising a bottom gate type thin film transistor.
  214. Ohtani, Hisashi; Adachi, Hiroki; Miyanaga, Akiharu; Takayama, Toru, Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film.
  215. Hongyong Zhang JP; Toru Takayama JP; Yasuhiko Takemura JP; Akiharu Miyanaga JP; Hisashi Ohtani JP, Semiconductor device forming method.
  216. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Semiconductor device forming method.
  217. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi, Semiconductor device forming method.
  218. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor device having a catalyst enhanced crystallized layer.
  219. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device having a crystalline semiconductor film.
  220. Zhang, Hongyong; Takayama, Toru, Semiconductor device having channel formation region comprising silicon and containing a group IV element.
  221. Yamazaki, Shunpei; Adachi, Hiroki; Kuwabara, Hideaki, Semiconductor device having semiconductor circuit comprising semiconductor element, and method for manufacturing same.
  222. Ohtani, Hisashi; Takano, Tamae; Kokubo, Chiho, Semiconductor device method of manufacturing.
  223. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi, Semiconductor device structure.
  224. Yamazaki, Shunpei, Semiconductor device with heat-resistant gate.
  225. Ohtani,Hisashi; Miyanaga,Akiharu; Zhang,Hongyong; Yamaguchi,Naoaki, Semiconductor device with residual nickel from crystallization of semiconductor film.
  226. Hirano, Kiichi; Sotani, Naoya; Yamaji, Toshifumi; Morimoto, Yoshihiro; Yoneda, Kiyoshi, Semiconductor device, display device and method of fabricating the same.
  227. Hirano,Kiichi; Sotani,Naoya; Yamaji,Toshifumi; Morimoto,Yoshihiro; Yoneda,Kiyoshi, Semiconductor device, display device and method of fabricating the same.
  228. Kiichi Hirano JP; Naoya Sotani JP; Toshifumi Yamaji JP; Yoshihiro Morimoto JP; Kiyoshi Yoneda JP, Semiconductor device, display device and method of fabricating the same.
  229. Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
  230. Yamazaki, Shunpei; Koyama, Jun; Miyanaga, Akiharu; Fukunaga, Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
  231. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same.
  232. Hisashi Ohtani JP; Shunpei Yamazaki JP; Jun Koyama JP; Yasushi Ogata JP; Akiharu Miyanaga JP, Semiconductor thin film and semiconductor device.
  233. Ohtani Hisashi,JPX ; Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Miyanaga Akiharu,JPX, Semiconductor thin film and semiconductor device.
  234. Ohtani, Hisashi; Yamazaki, Shunpei; Koyama, Jun; Ogata, Yasushi; Miyanaga, Akiharu, Semiconductor thin film and semiconductor device.
  235. Shunpei Yamazaki JP; Hisashi Ohtani JP; Toru Mitsuki JP; Akiharu Miyanaga JP; Yasushi Ogata JP, Semiconductor thin film and semiconductor device.
  236. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Mitsuki Toru,JPX ; Miyanaga Akiharu,JPX ; Ogata Yasushi,JPX, Semiconductor thin film and semiconductor device.
  237. Yamazaki, Shunpei; Ohtani, Hisashi; Mitsuki, Toru; Miyanaga, Akiharu; Ogata, Yasushi, Semiconductor thin film and semiconductor device.
  238. Yamazaki, Shunpei; Ohtani, Hisashi; Mitsuki, Toru; Miyanaga, Akiharu; Ogata, Yasushi, Semiconductor thin film and semiconductor device.
  239. Yamazaki, Shunpei; Ohtani, Hisashi; Mitsuki, Toru; Miyanaga, Akiharu; Ogata, Yasushi, Semiconductor thin film and semiconductor device.
  240. Yamazaki,Shunpei; Ohtani,Hisashi; Mitsuki,Toru; Miyanaga,Akiharu; Ogata,Yasushi, Semiconductor thin film and semiconductor device.
  241. Hisashi Ohtani JP; Akiharu Miyanaga JP; Takeshi Fukunaga JP; Hongyong Zhang JP, Semiconductor thin film transistor with crystal orientation.
  242. Taketomi, Yoshinao; Kuramasu, Keizaburo; Izuchi, Masumi; Satani, Hiroshi; Tsutsu, Hiroshi; Nishitani, Hikaru; Nishitani, Mikihiko; Goto, Masashi; Mino, Yoshiko, Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same.
  243. Taketomi, Yoshinao; Kuramasu, Keizaburo; Izuchi, Masumi; Satani, Hiroshi; Tsutsu, Hiroshi; Nishitani, Hikaru; Nishitani, Mikihiko; Goto, Masashi; MIno, Yoshiko, Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same.
  244. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Miyanaga Akiharu,JPX ; Fukunaga Takeshi,JPX, Semiconductor thin film, semiconductor device and manufacturing method thereof.
  245. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film, semiconductor device and manufacturing method thereof.
  246. Yamazaki,Shunpei; Koyama,Jun; Miyanaga,Akiharu; Fukunaga,Takeshi, Semiconductor thin film, semiconductor device and manufacturing method thereof.
  247. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor, semiconductor device, and method for fabricating the same.
  248. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor, semiconductor device, and method for fabricating the same.
  249. Yamazaki,Shunpei; Takemura,Yasuhiko; Zhang,Hongyong; Takayama,Toru; Uochi,Hideki, Semiconductor, semiconductor device, and method for fabricating the same.
  250. Yamazaki, Shunpei; Miyanaga, Akiharu; Koyama, Jun; Fukunaga, Takeshi, Thin film semiconductor device and its manufacturing method.
  251. Park,Byoung Keon; Lee,Ki Yong; Seo,Jin Wook; Yang,Tae Hoon, Thin film transistor and method of fabricating the same.
  252. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Thin film transistor having grain boundaries with segregated oxygen and halogen elements.
  253. Masashi Maekawa ; Yukihiko Nakata, Thin film transistor in metal-induced crystallized region formed around a transition metal nucleus site.
  254. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.
  255. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.
  256. Yamazaki, Shunpei; Teramoto, Satoshi, Thin film type monolithic semiconductor device.
  257. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Thin-film transistor and fabrication method for same.
  258. Ohnuma Hideto,JPX ; Yamazaki Shunpei,JPX, Thin-film transistor and semiconductor device using thin-film transistors.
  259. Ohnuma, Hideto; Yamazaki, Shunpei, Thin-film transistor and semiconductor device using thin-film transistors.
  260. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Transistor and semiconductor device having columnar crystals.
  261. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko; Miyanaga, Akiharu; Ohtani, Hisashi, Transistor and semiconductor device having columnar crystals.
  262. Nanba Norihiro,JPX, Zoom lens and optical apparatus having the same.
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