초록 ▼

A surface mountable integrated circuit and a method of manufacture are disclosed. A wafer 110 has a die with an integrated circuit 119 in one surface of the wafer. A via 130 extends to the opposite surface. the via has a sidewall oxide 131 and is filled with a conductive material such as metal or do

A surface mountable integrated circuit and a method of manufacture are disclosed. A wafer 110 has a die with an integrated circuit 119 in one surface of the wafer. A via 130 extends to the opposite surface. the via has a sidewall oxide 131 and is filled with a conductive material such as metal or doped polysilicon. The metal may comprise a barrier layer and an adhesion layer. The second end of the via can be fashioned as a prong 233 or a receptacle 430. Dies with vias can be stacked on top of each other or surface mounted to printed circuit boards or other substrate.

대표청구항 ▼

A surface mountable integrated circuit comprising: a wafer of semiconductor material with first and second surfaces and with integrated circuits formed on the first surface of said wafer; a via comprising a first end on the first surface of the wafer, an elongated passage bounded by a wall of semico

A surface mountable integrated circuit comprising: a wafer of semiconductor material with first and second surfaces and with integrated circuits formed on the first surface of said wafer; a via comprising a first end on the first surface of the wafer, an elongated passage bounded by a wall of semiconductor material extending from said first end a controlled depth into the wafer and toward said second surface of said wafer and terminating at the second surface of said wafer; a dielectric layer on said wall of semiconductor material; and a continuous layer of metal on said dielectric layer, said metal forming an elongated body extending from a first end at the first surface of the wafer to a second end at a controlled distance from the second surface of said wafer and said metal comprising a first layer of a barrier metal selected from the group consisting of titanium nitride, copper, lead, platinum, and nickel and a second layer of an adhesion metal deposited on the barrier metal and selected from the group consisting of titanium nitride, chromium, titanium, and titanium tungsten.