초록 ▼

A temperature control method in a rapid heat treatment apparatus comprising simulatively heating dummy wafers in a process tube and previously detecting and grasping by temperature sensors a wafer temperature rising pattern, a heater temperature rising pattern and an internal atmosphere temperature

A temperature control method in a rapid heat treatment apparatus comprising simulatively heating dummy wafers in a process tube and previously detecting and grasping by temperature sensors a wafer temperature rising pattern, a heater temperature rising pattern and an internal atmosphere temperature rising pattern, arranging wafers to be processed in the process tube, detecting a temperature of each zone and that of each heater element by the temperature sensors, upon heating the wafers, and controlling each heater element on the basis of the detected temperatures and the wafer, heater and internal atmosphere temperature rising patterns by a controller to rapidly and uniformly raise the temperature of each wafer until the temperature of the wafers in each zone reaches the intended one and becomes stable.

대표청구항 ▼

A temperature control method in a rapid heat treatment apparatus to rapidly and uniformly heat-process a plurality of substrates comprising: heating dummy substrates in a process tube by plural heater means and previously detecting by temperature detector means a substrate temperature rising pattern

A temperature control method in a rapid heat treatment apparatus to rapidly and uniformly heat-process a plurality of substrates comprising: heating dummy substrates in a process tube by plural heater means and previously detecting by temperature detector means a substrate temperature rising pattern obtained in each of a plurality of zones until the dummy substrates reach an intended temperature, a heater temperature rising pattern obtained in each of the zones until heat generating portions of said heater means reach the intended temperature, and also an internal atmosphere temperature rising pattern obtained in each of the zones until an atmosphere in the process tube reaches the intended temperature; arranging substrates to be processed in the process tube; detecting a temperature of each of the zones in the process tube and temperature of the heat generating portion of each heater means by the temperature detector means, upon heating the substrates; and controlling each of the heater means on the basis of the detected temperatures, said substrate temperature rising pattern, said heater temperature rising pattern and said internal atmosphere temperature rising pattern by a control means to rapidly and uniformly raise the temperature of each substrate until the temperature of the substrates in each of the zones reaches the intended one and becomes stable.