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Semiconductor device having a crystallized silicon thin film in which the crystallization direction is oriented either v

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/336
  • H01L-021/20
출원번호 US-0360599 (1994-12-21)
우선권정보 JP-0235461 (1993-08-27)
발명자 / 주소
  • Takemura Yasuhiko (Kanagawa JPX)
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd. (Kanagawa JPX 03)
인용정보 피인용 횟수 : 257  인용 특허 : 11

초록

A silicon film is crystallized in a predetermined direction by selectively adding a metal element having a catalytic action for crystallizing an amorphous silicon and annealing. In manufacturing TFT using the crystallized silicon film, TFT provided such that the crystallization direction is roughly

대표청구항

A method for manufacturing a semiconductor device comprising the steps of: forming a silicon film having an amorphous on a substrate; preparing an element which promotes crystallization before or after formation of the silicon film, to introduce the element into a region of the silicon film; crystal

이 특허에 인용된 특허 (11)

  1. Matsumoto Hiroshi (Hachioji JPX), Active matrix liquid crystal display having a peripheral driving circuit element.
  2. Misawa Toshiyuki (Nagano JPX) Oshima Hiroyuki (Nagano JPX), CMOS device for use in connection with an active matrix panel.
  3. Chiang Anne (Cupertino CA) Wu I-Wei (San Jose CA) Huang Tiao-Yuan (Cupertino CA), Formation of large grain polycrystalline films.
  4. Radd Fred J. (Ponca City OK) Oertle Don H. (Ponca City OK) McKinney Charles N. (Ponca City OK), Growth-orientation of crystals by raster scanning electron beam.
  5. Liu Gang (State College PA) Kakkad Ramesh H. (State College PA) Fonash Stephen J. (State College PA), Low temperature crystallization and pattering of amorphous silicon films.
  6. Fonash Stephen J. (State College PA) Liu Gang (Sunnyvale CA), Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates.
  7. Kasten Alan J. (Palm Bay FL), Method for providing polysilicon thin films of improved uniformity.
  8. Zhang Hongyong (Kanagawa JPX) Teramoto Satoshi (Kanagawa JPX), Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous s.
  9. Takayama Toru (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer.
  10. Kakinoki Hisashi (Ohi JPX) Nagahara Tatsuro (Ohi JPX) Fukui Keitaro (Ohi JPX), Polycrystalline silicon thin film and transistor using the same.
  11. Zhang Hongyong (Kanagawa JPX) Ohnuma Hideto (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Process for fabricating thin film transistor.

이 특허를 인용한 특허 (257)

  1. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same.
  2. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  3. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  4. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  5. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  6. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  7. Yamazaki, Shunpei; Ohtani, Hisashi; Takano, Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  8. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  9. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  10. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  11. Yamazaki,Shunpei; Ohtani,Hisashi; Takano,Tamae, Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same.
  12. Yamazaki, Shunpei, Device comprising EL element electrically connected to P-channel transistor.
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  14. Yamazaki, Shunpei; Arai, Yasuyuki, Display device.
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  17. Matsuda, Hiroshi, Driver circuit of display device with channel width directions of buffer and sampling thin film transistors identical with scanning direction of a radiating laser beam.
  18. Ohtani Hisashi,JPX ; Koyama Jun,JPX ; Yamazaki Shunpei,JPX, Electro-optical device and semiconductor circuit.
  19. Ohtani,Hisashi; Koyama,Jun; Yamazaki,Shunpei, Electro-optical device and semiconductor circuit.
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  22. Im, James S., Enhancing the width of polycrystalline grains with mask.
  23. Im, James S., Enhancing the width of polycrystalline grains with mask.
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  26. Jiroku, Hiroaki; Miyasaka, Mitsutoshi; Tokioka, Hidetada; Ogawa, Tetsuya, Fabrication method of thin-film semiconductor device.
  27. Fujieda, Ichiro; Fukuchi, Takashi; Tsuboi, Shinzo, Light emitting device and production method thereof.
  28. Yamazaki, Shunpei, Light-emitting device having a triple-layer wiring structure.
  29. Yamazaki, Shunpei; Arai, Yasuyuki, Manufacturing method for top-gate type and bottom-gate type thin film transistors.
  30. Ohtani Hisashi,JPX, Manufacturing method of semiconductor and manufacturing method of semiconductor device.
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  33. Ohtani, Hisashi, Metal-gettering method used in the manufacture of crystalline-Si TFT.
  34. Im, James S., Method and apparatus for processing thin metal layers.
  35. Im, James S., Method and system for facilitating bi-directional growth.
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  45. Yamazaki,Shunpei; Yamaguchi,Naoaki; Nakajima,Setsuo, Method for manufacturing a semiconductor device.
  46. Yasuhiko Takemura JP, Method for manufacturing a semiconductor device.
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  49. Ohtani, Hisashi; Miyanaga, Akiharu; Teramoto, Satoshi; Yamazaki, Shunpei, Method for manufacturing semiconductor device.
  50. Tanaka, Koichiro; Ohnuma, Hideto, Method for manufacturing transistor semiconductor devices with step of annealing to getter metal with phosphorous.
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  56. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Method for producing semiconductor device.
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  65. Nakajima,Setsuo; Ohtani,Hisashi, Method of fabricating semiconductor device.
  66. Yamazaki Shunpei,JPX ; Kusumoto Naoto,JPX ; Teramoto Satoshi,JPX, Method of fabricating semiconductor device.
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  69. Ohtani, Hisashi, Method of forming crystalline silicon film.
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  153. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
  154. Yamazaki,Shunpei; Zhang,Hongyong, Semiconductor device and method for forming the same.
  155. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  156. Adachi Hiroki,JPX ; Takenouchi Akira,JPX ; Fukada Takeshi,JPX ; Uehara Hiroshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  157. Hiroki Adachi JP; Akira Takenouchi JP; Takeshi Fukada JP; Hiroshi Uehara JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
  158. Hongyong Zhang JP; Hideki Uochi JP; Toru Takayama JP; Takeshi Fukunaga JP; Yasuhiko Takemura JP, Semiconductor device and method for manufacturing the same.
  159. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  160. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  161. Miyanaga,Akiharu; Ohtani,Hisashi; Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
  162. Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Yamazaki,Shunpei; Kuwabara,Hideaki, Semiconductor device and method for manufacturing the same.
  163. Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  164. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  165. Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  166. Takemura,Yasuhiko, Semiconductor device and method for manufacturing the same.
  167. Takemura,Yasuhiro, Semiconductor device and method for manufacturing the same.
  168. Zhang Hongyong,JPX ; Uochi Hideki,JPX ; Takayama Toru,JPX ; Fukunaga Takeshi,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for manufacturing the same.
  169. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  170. Zhang, Hongyong; Uochi, Hideki; Takayama, Toru; Fukunaga, Takeshi; Takemura, Yasuhiko, Semiconductor device and method for manufacturing the same.
  171. Yamazaki, Shunpei; Yamaguchi, Naoaki; Nakajima, Setsuo, Semiconductor device and method for producing it.
  172. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.
  173. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method for producing the same.
  174. Yamazaki Shunpei,JPX, Semiconductor device and method of fabricating same.
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  180. Shunpei Yamazaki JP; Jun Koyama JP, Semiconductor device and method of fabricating the same.
  181. Takemura, Yasuhiko, Semiconductor device and method of fabricating the same.
  182. Takemura,Yasuhiko, Semiconductor device and method of fabricating the same.
  183. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and method of fabricating the same.
  184. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and method of fabricating the same.
  185. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and method of fabricating the same.
  186. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and method of fabricating the same.
  187. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and method of fabricating the same.
  188. Yamazaki, Shunpei; Koyama, Jun, Semiconductor device and method of fabricating the same.
  189. Yamazaki,Shunpei; Koyama,Jun, Semiconductor device and method of fabricating the same.
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  192. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko, Semiconductor device and method of manufacturing the same.
  193. Ohtani, Hisashi; Takano, Tamae; Yamazaki, Shunpei, Semiconductor device and method of manufacturing the same.
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  201. Zhang Hongyong,JPX, Semiconductor device and method of manufacturing the same.
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  204. Shunpei Yamazaki JP; Naoaki Yamaguchi JP; Setsuo Nakajima JP, Semiconductor device comprising a bottom gate type thin film transistor.
  205. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device comprising a pixel unit including an auxiliary capacitor.
  206. Ohtani, Hisashi; Adachi, Hiroki; Miyanaga, Akiharu; Takayama, Toru, Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film.
  207. Yamazaki,Shunpei, Semiconductor device comprising thin film transistor comprising conductive film having tapered edge.
  208. Hongyong Zhang JP; Toru Takayama JP; Yasuhiko Takemura JP; Akiharu Miyanaga JP; Hisashi Ohtani JP, Semiconductor device forming method.
  209. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX ; Miyanaga Akiharu,JPX ; Ohtani Hisashi,JPX, Semiconductor device forming method.
  210. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi, Semiconductor device forming method.
  211. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX ; Zhang Hongyong,JPX ; Takayama Toru,JPX ; Uochi Hideki,JPX, Semiconductor device having a catalyst enhanced crystallized layer.
  212. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device having a crystalline semiconductor film.
  213. Zhang, Hongyong; Takayama, Toru, Semiconductor device having channel formation region comprising silicon and containing a group IV element.
  214. Yamazaki,Shunpei; Ohtani,Hisashi; Koyama,Jun; Fukunaga,Takeshi, Semiconductor device having crystalline semiconductor layer.
  215. Ohtani, Hisashi; Takano, Tamae; Kokubo, Chiho, Semiconductor device method of manufacturing.
  216. Zhang,Hongyong; Takayama,Toru; Takemura,Yasuhiko; Miyanaga,Akiharu; Ohtani,Hisashi, Semiconductor device structure.
  217. Yamazaki, Shunpei, Semiconductor device with channel having plural impurity regions.
  218. Yamazaki, Shunpei, Semiconductor device with heat-resistant gate.
  219. Yamazaki, Shunpei, Semiconductor device with tapered gates.
  220. Yamauchi, Shoichi; Ohshima, Hisayoshi; Matsui, Masaki; Onoda, Kunihiro; Ooka, Tadao; Yamanaka, Akitoshi; Izumi, Toshifumi, Semiconductor substrate and method of manufacturing the same.
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  225. Shunpei Yamazaki JP; Hisashi Ohtani JP; Toru Mitsuki JP; Akiharu Miyanaga JP; Yasushi Ogata JP, Semiconductor thin film and semiconductor device.
  226. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Mitsuki Toru,JPX ; Miyanaga Akiharu,JPX ; Ogata Yasushi,JPX, Semiconductor thin film and semiconductor device.
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  239. Im, James S., Single-shot semiconductor processing system and method having various irradiation patterns.
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  241. Im, James S., System for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts in overlap regions, and a mask for facilitating such artifact reduction/elimination.
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  243. Naoaki Komiya JP; Keiichi Sano JP, Thin film transistor and display device.
  244. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX ; Ohtani Hisashi,JPX ; Hamatani Toshiji,JPX, Thin film transistor having grain boundaries with segregated oxygen and halogen elements.
  245. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.
  246. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX, Thin film type monolithic semiconductor device.
  247. Yamazaki, Shunpei; Teramoto, Satoshi, Thin film type monolithic semiconductor device.
  248. Zhang Hongyong,JPX ; Takayama Toru,JPX ; Takemura Yasuhiko,JPX, Thin-film transistor and fabrication method for same.
  249. Ohnuma Hideto,JPX ; Yamazaki Shunpei,JPX, Thin-film transistor and semiconductor device using thin-film transistors.
  250. Ohnuma, Hideto; Yamazaki, Shunpei, Thin-film transistor and semiconductor device using thin-film transistors.
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  253. Zhang, Hongyong; Takayama, Toru; Takemura, Yasuhiko; Miyanaga, Akiharu; Ohtani, Hisashi, Transistor and semiconductor device having columnar crystals.
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