초록 ▼

A diode is provided comprising first and second semiconductor regions. The first semiconductor region is of one conductivity type and the second is of the opposite conductivity type. A third region is provided which is either an intrinsic semiconductor region or a low concentration region. The low c

A diode is provided comprising first and second semiconductor regions. The first semiconductor region is of one conductivity type and the second is of the opposite conductivity type. A third region is provided which is either an intrinsic semiconductor region or a low concentration region. The low concentration region has an impurity concentration lower than that of the first and second semiconductor layers. The third region is arranged to separate the first and second semiconductor regions. A control electrode region is provided over the third region through an insulative film.

대표청구항 ▼

A diode comprising: an insulating substrate; a first control electrode provided on said insulating substrate; a first insulating layer provided on said first control electrode; a semiconductor layer extending beyond an area over said first control electrode on said insulating substrate, said semicon

A diode comprising: an insulating substrate; a first control electrode provided on said insulating substrate; a first insulating layer provided on said first control electrode; a semiconductor layer extending beyond an area over said first control electrode on said insulating substrate, said semiconductor layer comprising a first semiconductor region of a first conductivity type, a second semiconductor region of a conductivity type opposite to the first conductivity type, and a third semiconductor region formed of one of an intrinsic region and an impurity region which has an impurity concentration lower than impurity concentrations of said first and second semiconductor regions, said third semiconductor region being arranged to oppose said first control electrode; a second insulating layer formed at least on said third semiconductor region; and a second control electrode arranged correspondingly to said third semiconductor region and separated from said third semiconductor region by said second insulating layer, said third semiconductor region being sandwiched between said first and second control electrodes, wherein said first and second semiconductor regions are each adjacent to said third semiconductor region, said first and second semiconductor regions each having an impurity concentration not less than 1019 cm-3, said third semiconductor region having an impurity concentration not greater than 1014 cm-3, and said semiconductor layer having a thickness less than a maximum thickness of a depletion region, so that in said first and second semiconductor regions, (a) the depletion region extends to said third semiconductor region at a floating state of said second control electrode, and (b) the depletion region extends into a whole of said third semiconductor region at a driving state of said second control electrode.