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Thermal treatment with enhanced intra-wafer, intra-and inter-batch uniformity 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
출원번호 US-0279744 (1994-07-22)
우선권정보 JP-0202701 (1993-07-24)
발명자 / 주소
  • Yuuki Tomohiro (Hamamatsu JPX)
출원인 / 주소
  • Yamaha Corporation (Hamamatsu JPX 03)
인용정보 피인용 횟수 : 51  인용 특허 : 10

초록

A process tube is surrounded by a heater. A number of gas inlet holes and a number of gas outlet holes are formed in the side wall of the process tube, the gas inlet and outlet holes facing each other and formed distributed in the longitudinal direction of the process tube. An oxidizing gas is suppl

대표청구항

A furnace for manufacturing a semiconductor device, the furnace comprising: (a) an inner tube for receiving semiconductor wafers, the inner tube including a wall having a plurality of holes therein; and (b) an outer tube having a plurality of outer tube partitions disposed outside of and connected t

이 특허에 인용된 특허 (10)

  1. Moran Joseph M. (Berkeley Heights NJ), Apparatus and method for plasma-assisted etching of wafers.
  2. Goldman Jon C. (Orange CA) Rappaport Robert E. (Westminster CA), Gas control system for chemical vapor deposition system.
  3. Jacob Adir (Framingham MA), Gas discharge apparatus.
  4. Thomas Michael E. (Milpitas CA), Gas distribution head for plasma deposition and etch systems.
  5. Schumaker Norman E. (Warren NJ) Stall Richard A. (Warren NJ) Nelson Craig R. (Green Village NJ) Wagner Wilfried R. (Basking Ridge NJ), Gas treatment apparatus and method.
  6. Bourdon Bernard (Orsay FRX), Method of attacking a thin film by decomposition of a gas in a plasma.
  7. Flamm Daniel L. (Chatham Township ; Morris County NJ) Maydan Dan (Short Hills NJ) Wang David N. (Warren Township ; Somerset County NJ), Plasma etching of silicon.
  8. Alberti ; Robert Stanley ; Goldman ; Jon Charles, Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat.
  9. Collins Kenneth S. (Morgan Hill CA) Roderick Craig A. (San Jose CA) Yang Chan-Lon (Los Gatos CA) Wang David N. K. (Saratoga CA) Maydan Dan (Los Altos CA), VHF/UHF reactor system.
  10. Inoue Yosuke (Ibaraki JPX) Suzuki Takaya (Katsuta JPX) Okamura Masahiro (Tokyo JPX) Akiyama Noboru (Hitachi JPX) Fujita Masato (Yamanashi JPX) Tochikubo Hiroo (Tokyo JPX) Iida Shinya (Tama JPX), Vapor phase growth on semiconductor wafers.

이 특허를 인용한 특허 (51)

  1. Nagakura, Yutaka, Air-tight vessel equipped with gas feeder uniformly supplying gaseous component around plural wafers.
  2. Derderian, Garo J.; Sandhu, Gurtej S., Apparatus for improved delivery of metastable species.
  3. Yang, Il-Kwang; Je, Sung-Tae; Song, Byoung-Gyu; Kim, Yong-Ki; Kim, Kyong-Hun; Shin, Yang-Sik, Apparatus for processing substrate for supplying reaction gas having phase difference.
  4. White, George W.; Vijay, Francis, Bone anchor suture-loading system, method and apparatus.
  5. Lee, Jong Hyun; Ryu, Hyun Seok; Lee, Jung Hyun; Kim, Ki Sung; Yoon, Suk Ho; Kim, Young Sun, Chemical vapor deposition apparatus.
  6. Mardian,Allen P.; Campbell,Philip H.; Carpenter,Craig M.; Mercil,Randy W.; Sharan,Sujit, Chemical vapor deposition method.
  7. Carpenter,Craig M.; Dando,Ross S., Chemical vapor deposition methods.
  8. Derderian,Garo J.; Sandhu,Gurtej S., Deposition methods for improved delivery of metastable species.
  9. Lee, Kwang-Myung; Yun, Ki-Young; Kim, Il-Kyoung; Park, Sung-Wook; Chae, Seung-Ki; Huh, No-Hyun; Kim, Jae-Wook; An, Jae-Hyuck; Kim, Woo-Seok; Kim, Myeong-Jin; Jang, Kyoung-Ho; Yanagisawa, Shinji; Tsutsumi, Kengo; Takahashi, Seiichi, Etching apparatus and etching method.
  10. Tsuda, Einosuke, Gas exhaust system of film-forming apparatus, film-forming apparatus, and method for processing exhaust gas.
  11. Kaneko, Hirofumi; Endo, Atsushi, Inner tube for process tube for manufacturing semiconductor wafers.
  12. Kaneko, Hirofumi; Endo, Atsushi, Inner tube for process tube for manufacturing semiconductor wafers.
  13. Kaneko, Hirofumi; Endo, Atsushi, Inner tube for process tube for manufacturing semiconductor wafers.
  14. Christian M. Gronet ; Peter A. Knoot ; Gary E. Miner ; Guangcai Xing ; David R. Lopes ; Satheesh Kuppurao, Method and apparatus for insitu vapor generation.
  15. Gronet Christian M. ; Knoot Peter A. ; Miner Gary E. ; Xing Guangcai ; Lopes David R. ; Kuppurao Satheesh, Method and apparatus for insitu vapor generation.
  16. Takagi Mikio,JPX, Method and apparatus for producing a semiconductor device.
  17. Tokai, Nobuo; Maeda, Yuji; Hashimoto, Masayuki, Method and system for forming film, semiconductor device and fabrication method thereof.
  18. Hasebe, Kazuhide; Yamamoto, Hiroyuki; Umehara, Takahito; Kawakami, Masato, Method for forming a vapor phase growth film.
  19. Gronet Christian M. ; Knoot Peter A. ; Miner Gary E. ; Xing Guangcai ; Lopes David R. ; Kuppurao Satheesh, Method for insitu vapor generation for forming an oxide on a substrate.
  20. Doan,Trung Tri; Breiner,Lyle D.; Ping,Er Xuan; Zheng,Lingyi A., Method of atomic layer deposition on plural semiconductor substrates simultaneously.
  21. Weimer,Ronald A.; DeBoer,Scott J.; Gealy,Dan; Al Shareef,Husam N., Method of fabricating a semiconductor device with a wet oxidation with steam process.
  22. Lee,Young Bok, Method of manufacturing flash memory device.
  23. Doan,Trung Tri; Breiner,Lyle D.; Ping,Er Xuan; Zheng,Lingyi A., Methods for treating pluralities of discrete semiconductor substrates.
  24. Doan,Trung Tri; Breiner,Lyle D.; Ping,Er Xuan; Zheng,Lingyi A., Methods for treating pluralities of discrete semiconductor substrates.
  25. Doan,Trung Tri; Breiner,Lyle D.; Ping,Er Xuan; Zheng,Lingyi A., Methods for treating semiconductor substrates.
  26. Basceri,Cem, Methods of gas delivery for deposition processes and methods of depositing material on a substrate.
  27. Kaneko, Hirofumi; Endo, Atsushi, Outer tube for process tube for manufacturing semiconductor wafers.
  28. Inoue,Hisashi; Endo,Atsushi, Process tube for manufacturing semiconductor wafers.
  29. Kaneko, Hirofumi, Process tube for manufacturing semiconductor wafers.
  30. Matsuura, Hiroyuki; Shimada, Koichi, Process tube for manufacturing semiconductor wafers.
  31. Sugawara,Kazuyuki, Process tube for manufacturing semiconductor wafers.
  32. Kaneko, Hirofumi, Process tube for manufacturing semiconductor wafers or the like.
  33. Gyu-hwan Kwag KR; Hyun Han KR; Ki-heum Nam KR, Process tube having slit type process gas injection portion and hole type waste gas exhaust portion, and apparatus for fabricating semiconductor device.
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  35. Sato, Akihiro, Reaction tube.
  36. Takagi, Kosuke; Okada, Satoshi, Reaction tube.
  37. Takagi, Kosuke; Okada, Satoshi, Reaction tube.
  38. Okuda, Kazuyuki; Mizuno, Norikazu, Substrate processing apparatus.
  39. Sakai, Masanori; Takebayashi, Yuji; Kato, Tsutomu; Sasaki, Shinya; Yamazaki, Hirohisa, Substrate processing apparatus and method for manufacturing semiconductor device.
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  43. Asai, Masayuki; Honda, Koichi; Umemoto, Mamoru; Okuda, Kazuyuki, Substrate processing apparatus and semiconductor device manufacturing method.
  44. Ishimaru, Nobuo, Substrate processing apparatus and semiconductor device producing method.
  45. Yang, Il-Kwang; Je, Sung-Tae; Song, Byoung-Gyu; Kim, Yong-Ki; Kim, Kyong-Hun; Shin, Yang-Sik, Substrate processing apparatus including auxiliary gas supply port.
  46. Yin Zhiping ; Sandhu Gurtej Singh, Surface treatment of DARC films to reduce defects in subsequent cap layers.
  47. Yin, Zhiping; Sandhu, Gurtej Singh, Surface treatment of DARC films to reduce defects in subsequent cap layers.
  48. Cho, Cheon-Soo; Youn, Dong-Sik; Lee, Hyun-Wook; Ha, Samchul, Surface treatment system and method.
  49. Nishimoto, Shinya, Temperature adjusting mechanism and semiconductor manufacturing apparatus using temperature adjusting mechanism.
  50. Braga, Robert, Wafer paddle.
  51. Braga, Robert, Wafer paddle.
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